☰

Massimo Fischetti - Publications

Affiliations: 
Electrical & Computer Engineering University of Massachusetts, Amherst, Amherst, MA 
Area:
Electronics and Electrical Engineering
Tree Info Similar researchers PubMed Report error

35 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2019 Khatami MM, Gaddemane G, Van de Put ML, Fischetti MV, Moravvej-Farshi MK, Pourfath M, Vandenberghe WG. Electronic Transport Properties of Silicane Determined from First Principles. Materials (Basel, Switzerland). 12. PMID 31514338 DOI: 10.3390/ma12182935  0.371
2019 Fischetti M, Narayanan S, O'Regan T, Sachs C. Electron Transport in Engineered Substrates: Strain, Orientation, and Channel/Insulator Material Effects Ecs Transactions. 3: 33-44. DOI: 10.1149/1.2355792  0.65
2016 Greene-Diniz G, Fischetti MV, Greer JC. Erratum: “Energies of the X- and L-valleys in In0.53Ga0.47As from electronic structure calculations” [J. Appl. Phys. 119, 055707 (2016)] Journal of Applied Physics. 119: 199901. DOI: 10.1063/1.4952376  0.49
2016 Greene-Diniz G, Fischetti MV, Greer JC. Energies of the X- and L-valleys in In0.53Ga0.47As from electronic structure calculations Journal of Applied Physics. 119: 055707. DOI: 10.1063/1.4940740  0.563
2013 Fischetti MV, Kim J, Narayanan S, Ong ZY, Sachs C, Ferry DK, Aboud SJ. Pseudopotential-based studies of electron transport in graphene and graphene nanoribbons. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 25: 473202. PMID 24135050 DOI: 10.1088/0953-8984/25/47/473202  0.506
2013 Fischetti MV, Aboud SJ, Ong ZY, Kim J, Narayanan S, Sachs C. Pseudopotential-based study of electron transport in low-dimensionality nanostructures Ecs Transactions. 58: 229-234. DOI: 10.1149/05807.0229ecst  0.506
2013 Ong ZY, Fischetti MV. Mobility enhancement and temperature dependence in top-gated single-layer MoS2 Physical Review B - Condensed Matter and Materials Physics. 88. DOI: 10.1103/Physrevb.88.165316  0.301
2013 Ong ZY, Fischetti MV. Theory of remote phonon scattering in top-gated single-layer graphene Physical Review B - Condensed Matter and Materials Physics. 88. DOI: 10.1103/Physrevb.88.045405  0.307
2013 Ong ZY, Fischetti MV. Top oxide thickness dependence of remote phonon and charged impurity scattering in top-gated graphene Applied Physics Letters. 102. DOI: 10.1063/1.4804432  0.351
2012 Fischetti MV. Post-Si-CMOS devices - Scaling FETs to (Beyond?) 10 nm: From semiclassical to quantum models 2012 International Silicon-Germanium Technology and Device Meeting, Istdm 2012 - Proceedings. 1-2. DOI: 10.1109/ISTDM.2012.6222418  0.321
2012 Kim J, Fischetti MV, Aboud S. Structural, electronic, and transport properties of silicane nanoribbons Physical Review B. 86. DOI: 10.1103/Physrevb.86.205323  0.546
2012 Kim J, Krishnan SA, Narayanan S, Chudzik MP, Fischetti MV. Thickness and temperature dependence of the leakage current in hafnium-based Si SOI MOSFETs Microelectronics Reliability. 52: 2907-2913. DOI: 10.1016/J.Microrel.2012.06.151  0.493
2011 Kim J, Fischetti MV. Empirical pseudopotential calculations of the band structure and ballistic conductance of strained [001], [110], and [111] silicon nanowires Journal of Applied Physics. 110: 033716. DOI: 10.1063/1.3615942  0.542
2010 O'Regan TP, Fischetti MV, Soŕe B, Jin S, Magnus W, Meuris M. Calculation of the electron mobility in III-V inversion layers with high- κ dielectrics Journal of Applied Physics. 108. DOI: 10.1063/1.3500553  0.69
2010 Kim J, Fischetti MV. Electronic band structure calculations for biaxially strained Si, Ge, and III–V semiconductors Journal of Applied Physics. 108: 013710. DOI: 10.1063/1.3437655  0.525
2010 O'Regan TP, Hurley PK, Soŕe B, Fischetti MV. Modeling the capacitance-voltage response of In0.53Ga 0.47 As metal-oxide-semiconductor structures: Charge quantization and nonparabolic corrections Applied Physics Letters. 96. DOI: 10.1063/1.3436645  0.648
2009 Zhang Y, Fischetti MV, Sorée B, Magnus W, Heyns M, Meuris M. Physical modeling of strain-dependent hole mobility in Ge p-channel inversion layers Journal of Applied Physics. 106: 083704. DOI: 10.1063/1.3245327  0.452
2007 O'Regan T, Fischetti M. Remote phonon scattering in Si and Ge with SiO2 and HfO 2 insulators: Does the electron mobility determine short channel performance? Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 46: 3265-3272. DOI: 10.1143/Jjap.46.3265  0.706
2007 Jin S, Fischetti MV, Tang T. Modeling of electron mobility in gated silicon nanowires at room temperature: Surface roughness scattering, dielectric screening, and band nonparabolicity Journal of Applied Physics. 102: 083715. DOI: 10.1063/1.2802586  0.323
2007 Zhang Y, Kim J, Fischetti MV. Self-consistent calculation for valence subband structure and hole mobility in p-channel inversion layers Journal of Computational Electronics. 7: 176-180. DOI: 10.1007/S10825-007-0159-1  0.508
2007 O'Regan T, Fischetti M. Electron mobility in silicon and germanium inversion layers: The role of remote phonon scattering Journal of Computational Electronics. 6: 81-84. DOI: 10.1007/S10825-006-0072-Z  0.702
2006 Krishnan S, Fischetti M, Vasileska D. Self-consistent full band two-dimensional Monte Carlo two-dimensional Poisson device solver for modeling SiGe p-channel devices Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 24: 1997-2003. DOI: 10.1116/1.2216718  0.39
2003 Fischetti MV, Ren Z, Solomon PM, Yang M, Rim K. Six-band k⋅p calculation of the hole mobility in silicon inversion layers: Dependence on surface orientation, strain, and silicon thickness Journal of Applied Physics. 94: 1079-1095. DOI: 10.1063/1.1585120  0.324
2002 Fischetti MV, Neumayer DA, Cartier EA. Erratum: “Effective electron mobility in Si inversion layers in metal–oxide–semiconductor systems with a high-κ insulator: The role of remote phonon scattering” [J. Appl. Phys. 90, 4587 (2001)] Journal of Applied Physics. 91: 546. DOI: 10.1063/1.1427643  0.324
2001 Fischetti MV, Neumayer DA, Cartier EA. Effective electron mobility in Si inversion layers in metal-oxide-semiconductor systems with a high-κ insulator: The role of remote phonon scattering Journal of Applied Physics. 90: 4587-4608. DOI: 10.1063/1.1405826  0.36
2001 Fischetti MV. Long-range Coulomb interactions in small Si devices. Part II. Effective electron mobility in thin-oxide structures Journal of Applied Physics. 89: 1232-1250. DOI: 10.1063/1.1332424  0.417
1994 Fischetti MV. Comments on “Oxide-Field Dependence of Electron Injection from Silicon into Silicon Dioxide” Ieee Transactions On Electron Devices. 41: 1680-1683. DOI: 10.1109/16.310127  0.316
1994 Carbone L, Brunetti R, Jacoboni C, Lacaita A, Fischetti M. Polarization analysis of hot-carrier light emission in silicon Semiconductor Science and Technology. 9: 674-676. DOI: 10.1088/0268-1242/9/5S/073  0.319
1991 Fischetti MV. Effect of the electron-plasmon interaction on the electron mobility in silicon Physical Review B. 44: 5527-5534. DOI: 10.1103/PhysRevB.44.5527  0.329
1988 DiMaria DJ, Fischetti MV. Vacuum emission of hot electrons from silicon dioxide at low temperatures Journal of Applied Physics. 64: 4683-4691. DOI: 10.1063/1.341252  0.415
1986 Weinberg ZA, Fischetti MV, Nissan-Cohen Y. SiO2-induced substrate current and its relation to positive charge in field-effect transistors Journal of Applied Physics. 59: 824-832. DOI: 10.1063/1.336605  0.307
1985 Fischetti MV. Model for the generation of positive charge at the Si-SiO2 interface based on hot-hole injection from the anode Physical Review B. 31: 2099-2113. DOI: 10.1103/PhysRevB.31.2099  0.347
1985 Brorson SD, DiMaria DJ, Fischetti MV, Pesavento FL, Solomon PM, Dong DW. Direct measurement of the energy distribution of hot electrons in silicon dioxide Journal of Applied Physics. 58: 1302-1313. DOI: 10.1063/1.336098  0.307
1985 Weinberg ZA, Fischetti MV. Investigation of the SiO2-induced substrate current in silicon field-effect transistors Journal of Applied Physics. 57: 443-452. DOI: 10.1063/1.334771  0.339
1985 Fischetti MV, Weinberg ZA, Calise JA. The effect of gate metal and SiO2 thickness on the generation of donor states at the Si-SiO2 interface Journal of Applied Physics. 57: 418-425. DOI: 10.1063/1.334767  0.433
Show low-probability matches.