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Jinqiao Xie, Ph.D. - Publications

Affiliations: 
2007 Virginia Commonwealth University, Richmond, VA, United States 
Area:
Electronics and Electrical Engineering
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61 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Xiao M, Du Z, Xie J, Beam E, Yan X, Cheng K, Wang H, Cao Y, Zhang Y. Lateral p-GaN/2DEG junction diodes by selective-area p-GaN trench-filling-regrowth in AlGaN/GaN Applied Physics Letters. 116: 53503. DOI: 10.1063/1.5139906  0.39
2019 Ciarkowski T, Allen N, Carlson E, McCarthy R, Youtsey C, Wang J, Fay P, Xie J, Guido L. Connection between Carbon Incorporation and Growth Rate for GaN Epitaxial Layers Prepared by OMVPE. Materials (Basel, Switzerland). 12. PMID 31374963 DOI: 10.3390/Ma12152455  0.309
2019 Wang J, McCarthy R, Youtsey C, Reddy R, Xie J, Beam E, Guido L, Cao L, Fay P. Ion‐Implant Isolated Vertical GaN p‐n Diodes Fabricated with Epitaxial Lift‐Off From GaN Substrates (Phys. Status Solidi A 4∕2019) Physica Status Solidi (a). 216: 1970019. DOI: 10.1002/Pssa.201970019  0.401
2019 Wang J, McCarthy R, Youtsey C, Reddy R, Xie J, Beam E, Guido L, Cao L, Fay P. Ion‐Implant Isolated Vertical GaN p‐n Diodes Fabricated with Epitaxial Lift‐Off From GaN Substrates Physica Status Solidi (a). 216: 1800652. DOI: 10.1002/Pssa.201800652  0.404
2018 Wang J, McCarthy R, Youtsey C, Reddy R, Xie J, Beam E, Guido L, Cao L, Fay P. High-Voltage Vertical GaN p-n Diodes by Epitaxial Liftoff From Bulk GaN Substrates Ieee Electron Device Letters. 39: 1716-1719. DOI: 10.1109/Led.2018.2868560  0.423
2018 Amano H, Baines Y, Beam E, Borga M, Bouchet T, Chalker PR, Charles M, Chen KJ, Chowdhury N, Chu R, De Santi C, De Souza MM, Decoutere S, Di Cioccio L, Eckardt B, ... ... Xie J, et al. The 2018 GaN power electronics roadmap Journal of Physics D: Applied Physics. 51: 163001. DOI: 10.1088/1361-6463/Aaaf9D  0.326
2018 Wang J, Cao L, Xie J, Beam E, McCarthy R, Youtsey C, Fay P. High voltage, high current GaN-on-GaN p-n diodes with partially compensated edge termination Applied Physics Letters. 113: 23502. DOI: 10.1063/1.5035267  0.364
2017 Wang J, Youtsey C, McCarthy R, Reddy R, Allen N, Guido L, Xie J, Beam E, Fay P. Thin-film GaN Schottky diodes formed by epitaxial lift-off Applied Physics Letters. 110: 173503. DOI: 10.1063/1.4982250  0.399
2015 Bryan Z, Bryan I, Xie J, Mita S, Sitar Z, Collazo R. High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates Applied Physics Letters. 106. DOI: 10.1063/1.4917540  0.401
2014 Gaddy BE, Bryan Z, Bryan I, Xie J, Dalmau R, Moody B, Kumagai Y, Nagashima T, Kubota Y, Kinoshita T, Koukitu A, Kirste R, Sitar Z, Collazo R, Irving DL. The role of the carbon-silicon complex in eliminating deep ultraviolet absorption in AlN Applied Physics Letters. 104. DOI: 10.1063/1.4878657  0.337
2014 Guo W, Bryan Z, Xie J, Kirste R, Mita S, Bryan I, Hussey L, Bobea M, Haidet B, Gerhold M, Collazo R, Sitar Z. Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates Journal of Applied Physics. 115: 103108. DOI: 10.1063/1.4868678  0.402
2013 Makowski MS, Bryan I, Sitar Z, Arellano C, Xie J, Collazo R, Ivanisevic A. Erratum: "Kinase detection with gallium nitride based high electron mobility transistors" [Appl. Phys. Lett. 103, 013701 (2013)]. Applied Physics Letters. 103: 89902. PMID 24046484 DOI: 10.1063/1.4819200  0.301
2013 Gaddy BE, Bryan Z, Bryan I, Kirste R, Xie J, Dalmau R, Moody B, Kumagai Y, Nagashima T, Kubota Y, Kinoshita T, Koukitu A, Sitar Z, Collazo R, Irving DL. Vacancy compensation and related donor-acceptor pair recombination in bulk AlN Applied Physics Letters. 103. DOI: 10.1063/1.4824731  0.345
2013 Chichibu SF, Hazu K, Ishikawa Y, Tashiro M, Ohtomo T, Furusawa K, Uedono A, Mita S, Xie J, Collazo R, Sitar Z. Excitonic emission dynamics in homoepitaxial AlN films studied using polarized and spatio-time-resolved cathodoluminescence measurements Applied Physics Letters. 103: 142103. DOI: 10.1063/1.4823826  0.388
2013 Neuschl B, Thonke K, Feneberg M, Goldhahn R, Wunderer T, Yang Z, Johnson NM, Xie J, Mita S, Rice A, Collazo R, Sitar Z. Direct determination of the silicon donor ionization energy in homoepitaxial AlN from photoluminescence two-electron transitions Applied Physics Letters. 103. DOI: 10.1063/1.4821183  0.393
2013 Kirste R, Mita S, Hussey L, Hoffmann MP, Guo W, Bryan I, Bryan Z, Tweedie J, Xie J, Gerhold M, Collazo R, Sitar Z. Polarity control and growth of lateral polarity structures in AlN Applied Physics Letters. 102: 181913. DOI: 10.1063/1.4804575  0.335
2013 Xie J, Mita S, Bryan Z, Guo W, Hussey L, Moody B, Schlesser R, Kirste R, Gerhold M, Collazo R, Sitar Z. Lasing and longitudinal cavity modes in photo-pumped deep ultraviolet AlGaN heterostructures Applied Physics Letters. 102. DOI: 10.1063/1.4803689  0.342
2013 Bryan I, Rice A, Hussey L, Bryan Z, Bobea M, Mita S, Xie J, Kirste R, Collazo R, Sitar Z. Strain relaxation by pitting in AlN thin films deposited by metalorganic chemical vapor deposition Applied Physics Letters. 102. DOI: 10.1063/1.4792694  0.356
2013 Guo W, Xie J, Akouala C, Mita S, Rice A, Tweedie J, Bryan I, Collazo R, Sitar Z. Comparative study of etching high crystalline quality AlN and GaN Journal of Crystal Growth. 366: 20-25. DOI: 10.1016/J.Jcrysgro.2012.12.141  0.347
2012 Nagashima T, Kubota Y, Kinoshita T, Kumagai Y, Xie J, Collazo R, Murakami H, Okamoto H, Koukitu A, Sitar Z. Structural and Optical Properties of Carbon-Doped AlN Substrates Grown by Hydride Vapor Phase Epitaxy Using AlN Substrates Prepared by Physical Vapor Transport Applied Physics Express. 5: 125501. DOI: 10.1143/Apex.5.125501  0.378
2012 Kinoshita T, Hironaka K, Obata T, Nagashima T, Dalmau R, Schlesser R, Moody B, Xie J, Inoue SI, Kumagai Y, Koukitu A, Sitar Z. Deep-ultraviolet light-emitting diodes fabricated on aln substrates prepared by hydride vapor phase epitaxy Applied Physics Express. 5. DOI: 10.1143/Apex.5.122101  0.427
2012 Kumagai Y, Kubota Y, Nagashima T, Kinoshita T, Dalmau R, Schlesser R, Moody B, Xie J, Murakami H, Koukitu A, Sitar Z. Preparation of a freestanding AIN substrate from a thick AIN layer grown by hydride vapor phase epitaxy on a bulk AIN substrate prepared by physical vapor transport Applied Physics Express. 5. DOI: 10.1143/Apex.5.055504  0.411
2012 Hussey L, Mita S, Xie J, Guo W, Akouala CR, Rajan J, Bryan I, Collazo R, Sitar Z. Lateral epitaxial overgrowth of nitrogen polar GaN on smooth nitrogen polar GaN templates by metalorganic chemical vapor deposition Journal of Applied Physics. 112. DOI: 10.1063/1.4768526  0.386
2012 Collazo R, Xie J, Gaddy BE, Bryan Z, Kirste R, Hoffmann M, Dalmau R, Moody B, Kumagai Y, Nagashima T, Kubota Y, Kinoshita T, Koukitu A, Irving DL, Sitar Z. On the origin of the 265 nm absorption band in AlN bulk crystals Applied Physics Letters. 100. DOI: 10.1063/1.4717623  0.341
2012 Bryan Z, Hoffmann M, Tweedie J, Kirste R, Callsen G, Bryan I, Rice A, Bobea M, Mita S, Xie J, Sitar Z, Collazo R. Fermi Level Control of Point Defects During Growth of Mg-Doped GaN Journal of Electronic Materials. 42: 815-819. DOI: 10.1007/S11664-012-2342-9  0.361
2012 Tweedie J, Collazo R, Rice A, Mita S, Xie J, Akouala RC, Sitar Z. Schottky barrier and interface chemistry for Ni contacted to Al 0.8Ga 0.2N grown on c-oriented AlN single crystal substrates Physica Status Solidi (C) Current Topics in Solid State Physics. 9: 584-587. DOI: 10.1002/Pssc.201100435  0.425
2012 Neuschl B, Thonke K, Feneberg M, Mita S, Xie J, Dalmau R, Collazo R, Sitar Z. Optical identification of silicon as a shallow donor in MOVPE grown homoepitaxial AlN Physica Status Solidi (B). 249: 511-515. DOI: 10.1002/Pssb.201100381  0.429
2011 Dalmau R, Moody B, Schlesser R, Mita S, Xie J, Feneberg M, Neuschl B, Thonke K, Collazo R, Rice A, Tweedie J, Sitar Z. Growth and characterization of AlN and AlGaN epitaxial films on AlN single crystal substrates Journal of the Electrochemical Society. 158: H530-H535. DOI: 10.1149/1.3560527  0.362
2011 Xie J, Mita S, Collazo R, Rice A, Tweedie J, Sitar Z. Fermi level effect on strain of Si-doped GaN Proceedings of Spie - the International Society For Optical Engineering. 7939. DOI: 10.1117/12.878726  0.377
2011 Kirste R, Collazo R, Callsen G, Wagner MR, Kure T, Sebastian Reparaz J, Mita S, Xie J, Rice A, Tweedie J, Sitar Z, Hoffmann A. Temperature dependent photoluminescence of lateral polarity junctions of metal organic chemical vapor deposition grown GaN Journal of Applied Physics. 110: 093503. DOI: 10.1063/1.3656987  0.43
2011 Xie J, Mita S, Hussey L, Rice A, Tweedie J, Lebeau J, Collazo R, Sitar Z. On the strain in n-type GaN Applied Physics Letters. 99. DOI: 10.1063/1.3647772  0.383
2011 Xie J, Mita S, Rice A, Tweedie J, Hussey L, Collazo R, Sitar Z. Strain in Si doped GaN and the Fermi level effect Applied Physics Letters. 98. DOI: 10.1063/1.3589978  0.365
2011 Mita S, Collazo R, Rice A, Tweedie J, Xie J, Dalmau R, Sitar Z. Impact of gallium supersaturation on the growth of N-polar GaN Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 2078-2080. DOI: 10.1002/Pssc.201001063  0.345
2011 Xie J, Mia S, Dalmau R, Collazo R, Rice A, Tweedie J, Sitar Z. Ni/Au Schottky diodes on AlxGa1-xN (0.7<x<1) grown on AlN single crystal substrates Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 2407-2409. DOI: 10.1002/Pssc.201001009  0.445
2011 Collazo R, Mita S, Xie J, Rice A, Tweedie J, Dalmau R, Sitar Z. Progress on n-type doping of algan alloys on aln single crystal substrates for uv optoelectronic applications Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 2031-2033. DOI: 10.1002/Pssc.201000964  0.421
2011 Dalmau R, Moody B, Xie J, Collazo R, Sitar Z. Characterization of dislocation arrays in AlN single crystals grown by PVT Physica Status Solidi (a) Applications and Materials Science. 208: 1545-1547. DOI: 10.1002/Pssa.201000957  0.365
2011 Feneberg M, Neuschl B, Thonke K, Collazo R, Rice A, Sitar Z, Dalmau R, Xie J, Mita S, Goldhahn R. Sharp bound and free exciton lines from homoepitaxial AlN Physica Status Solidi (a). 208: 1520-1522. DOI: 10.1002/Pssa.201000947  0.348
2010 Xie J, Mita S, Collazo R, Rice A, Tweedie J, Sitar Z. The effect of N-polar GaN domains as Ohmic contacts Applied Physics Letters. 97. DOI: 10.1063/1.3491173  0.392
2010 Rice A, Collazo R, Tweedie J, Dalmau R, Mita S, Xie J, Sitar Z. Surface preparation and homoepitaxial deposition of AlN on (0001)-oriented AlN substrates by metalorganic chemical vapor deposition Journal of Applied Physics. 108. DOI: 10.1063/1.3467522  0.418
2010 Tweedie J, Collazo R, Rice A, Xie J, Mita S, Dalmau R, Sitar Z. X-ray characterization of composition and relaxation of Alx Ga1-xN (0<x<1) layers grown on GaN/sapphire templates by low pressure organometallic vapor phase epitaxy Journal of Applied Physics. 108. DOI: 10.1063/1.3457149  0.37
2010 Rice A, Collazo R, Tweedie J, Xie J, Mita S, Sitar Z. Linear dependency of Al-mole fraction with group-III precursor flows in AlxGa1-xN (0≤x≤1) deposition by LP OMVPE Journal of Crystal Growth. 312: 1321-1324. DOI: 10.1016/J.Jcrysgro.2009.09.011  0.364
2010 Collazo R, Mita S, Xie J, Rice A, Tweedie J, Dalmau R, Sitar Z. Implementation of the GaN lateral polarity junction in a MESFET utilizing polar doping selectivity Physica Status Solidi (a) Applications and Materials Science. 207: 45-48. DOI: 10.1002/Pssa.200982629  0.342
2009 Teke A, Gökden S, Tülek R, Leach JH, Fan Q, Xie J, Özgür U, Morkoç H, Lisesivdin SB, Özbay E. The effect of AIN interlayer thicknesses on scattering processes in lattice-matched AllnN/GaN two-dimensional electron gas heterostructures New Journal of Physics. 11. DOI: 10.1088/1367-2630/11/6/063031  0.679
2009 Leach JH, Zhu CY, Wu M, Ni X, Li X, Xie J, Özgür U, Morko̧ H, Liberis J, Šermukšnis E, Matulionis A, Cheng H, Kurdak C. Degradation in InAlN/GaN-based heterostructure field effect transistors: Role of hot phonons Applied Physics Letters. 95. DOI: 10.1063/1.3271183  0.672
2008 Matulionis A, Liberis J, Šermukšnis E, Xie J, Leach JH, Wu M, Morkoç H. Hot-electron energy relaxation time in AlInN/AlN/GaN 2DEG channels Semiconductor Science and Technology. 23. DOI: 10.1088/0268-1242/23/7/075048  0.66
2008 Xie J, Ni X, Fan Q, Shimada R, Özgür Ü, Morkoç H. On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers Applied Physics Letters. 93: 121107. DOI: 10.1063/1.2988324  0.625
2008 Shimada R, Xie J, Avrutin V, Özgür U, Morkoč H. Cavity polaritons in ZnO-based hybrid microcavities Applied Physics Letters. 92: 011127. DOI: 10.1063/1.2830022  0.479
2007 Chevtchenko SA, Agra FA, Xie J, Morkoç H. Comparative Study of Thin PZT Sol-gel Films Deposited on Pt and GaN Substrates Mrs Proceedings. 1034. DOI: 10.1557/Proc-1034-K10-37  0.5
2007 Xiao B, Gu X, Izyumskaya N, Avrutin V, Xie J, Liu H, Morkoç H. Structural and electrical properties of Pb(Zr,Ti)O3 grown on (0001) GaN using a double PbTiO3∕PbO bridge layer Applied Physics Letters. 91: 182908. DOI: 10.1063/1.2805220  0.638
2007 Xie J, Ni X, Wu M, Leach JH, Özgür U, Morko̧ H. High electron mobility in nearly lattice-matched AlInNAlNGaN heterostructure field effect transistors Applied Physics Letters. 91. DOI: 10.1063/1.2794419  0.683
2007 Xie J, Chevtchenko SA, Özgür Ü, Morkoç H. Defect reduction in GaN epilayers grown by metal-organic chemical vapor deposition with in situ SiNx nanonetwork Applied Physics Letters. 90: 262112. DOI: 10.1063/1.2753096  0.531
2007 Liu C, Chang SH, Noh TW, Song J-, Xie J. Effects of growth temperature and oxygen pressure on the properties of heteroepitaxial ZnO thin films on sapphire (0001) substrates by pulsed laser deposition Physica Status Solidi B-Basic Solid State Physics. 244: 1528-1532. DOI: 10.1002/Pssb.200675127  0.378
2006 Xie J, Fu Y, Morkoç H. Schottky I-V Characteristics of Au/Ni/GaN/SiNx nanonework/sapphire structures Mrs Proceedings. 955. DOI: 10.1557/Proc-0955-I15-34  0.502
2006 DeCuir EA, Fred E, Manasreh O, Xie J, Morkoc H, Baumann E, Hofstetter D. 1.37 - 2.90 Micron Intersubband Transitions in GaN/AlN Superlattices Mrs Proceedings. 955. DOI: 10.1557/Proc-0955-I13-01  0.504
2006 Gu X, Xie J, Chevtchenko S, Izyumskaya N, Avrutin V, Morkoç H. Epitaxial Growth of ZrO2 on GaN by MOMBE for High Dielectric Material Applications Mrs Proceedings. 955. DOI: 10.1557/Proc-0955-I06-01  0.548
2006 Xie J, Fu Y, Ni X, Chevtchenko S, Morkoç H. I-V characteristics of Au∕Ni Schottky diodes on GaN with SiNx nanonetwork Applied Physics Letters. 89: 152108. DOI: 10.1063/1.2359294  0.642
2006 DeCuir EA, Fred E, Passmore BS, Muddasani A, Manasreh MO, Xie J, Morkoç H, Ware ME, Salamo GJ. Near-infrared wavelength intersubband transitions in GaN∕AlN short period superlattices Applied Physics Letters. 89: 151112. DOI: 10.1063/1.2358929  0.463
2006 Kang Y, Fan Q, Xiao B, Alivov YI, Xie J, Onojima N, Cho S, Moon Y, Lee H, Johnstone D, Morkoç H, Park Y. Fabrication and current-voltage characterization of a ferroelectric lead zirconate titanate/AlGaN∕GaN field effect transistor Applied Physics Letters. 88: 123508. DOI: 10.1063/1.2187956  0.476
2005 Fu Y, Moon YT, Yun F, Özgür U, Xie JQ, Doǧan S, Morkoç H, Inoki CK, Kuan TS, Zhou L, Smith DJ. Effectiveness of TiN porous templates on the reduction of threading dislocations in GaN overgrowth by organometallic vapor-phase epitaxy Applied Physics Letters. 86: 043108-1-043108-3. DOI: 10.1063/1.1849833  0.542
2005 Reshchikov MA, Xie J, He L, Gu X, Moon YT, Fu Y, Morkoç H. Effect of potential fluctuations on photoluminescence in Mg-doped GaN Physica Status Solidi (C). 2: 2761-2764. DOI: 10.1002/Pssc.200461370  0.487
2004 Spradlin J, Doǧan S, Xie J, Molnar R, Baski AA, Morkoç H. Investigation of forward and reverse current conduction in GaN films by conductive atomic force microscopy Applied Physics Letters. 84: 4150-4152. DOI: 10.1063/1.1751609  0.481
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