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Jacob H. Leach, Ph.D. - Publications

Affiliations: 
2010 Electrical Engineering Virginia Commonwealth University, Richmond, VA, United States 
Area:
Electronics and Electrical Engineering
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95 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2023 Song Y, Bhattacharyya A, Karim A, Shoemaker D, Huang HL, Roy S, McGray C, Leach JH, Hwang J, Krishnamoorthy S, Choi S. Ultra-Wide Band Gap GaO-on-SiC MOSFETs. Acs Applied Materials & Interfaces. PMID 36700621 DOI: 10.1021/acsami.2c21048  0.315
2021 Song Y, Shoemaker D, Leach JH, McGray C, Huang HL, Bhattacharyya A, Zhang Y, Gonzalez-Valle CU, Hess T, Zhukovsky S, Ferri K, Lavelle RM, Perez C, Snyder DW, Maria JP, et al. GaO-on-SiC Composite Wafer for Thermal Management of Ultrawide Bandgap Electronics. Acs Applied Materials & Interfaces. 13: 40817-40829. PMID 34470105 DOI: 10.1021/acsami.1c09736  0.362
2020 Song Y, Lundh JS, Wang W, Leach JH, Eichfeld D, Krishnan A, Perez C, Ji D, Borman T, Ferri K, Maria J, Chowdhury S, Ryou J, Foley BM, Choi S. The Doping Dependence of the Thermal Conductivity of Bulk Gallium Nitride Substrates Journal of Electronic Packaging. 142. DOI: 10.1115/1.4047578  0.358
2020 Ščajev P, Jarašiūnas K, Leach J. Carrier recombination processes in Fe-doped GaN studied by optical pump–probe techniques Journal of Applied Physics. 127: 245705. DOI: 10.1063/5.0009258  0.339
2019 Sunay UR, Zvanut ME, Marbey J, Hill S, Leach J, Udwary K. Small non-uniform basal crystal fields in HVPE free-standing GaN:Mg as evidenced by angular dependent and frequency-dependent EPR. Journal of Physics. Condensed Matter : An Institute of Physics Journal. PMID 31096190 DOI: 10.1088/1361-648X/Ab21Ec  0.317
2018 Briggs N, Preciado MI, Lu Y, Wang K, Leach J, Li X, Xiao K, Subramanian S, Wang B, Haque MA, Sinnott S, Robinson JA. Transformation of 2D Group-III selenides to ultra-thin nitrides: enabling epitaxy on amorphous substrates. Nanotechnology. PMID 30207301 DOI: 10.1088/1361-6528/Aae0Bb  0.374
2017 Reshchikov MA, Usikov A, Helava H, Makarov YN, Prozheeva V, Makkonen I, Tuomisto F, Leach JH, Udwary K. Evaluation of the concentration of point defects in GaN Scientific Reports. 7: 9297. PMID 28839151 DOI: 10.1038/S41598-017-08570-1  0.304
2017 Paskov PP, Slomski M, Leach JH, Muth JF, Paskova T. Effect of Si doping on the thermal conductivity of bulk GaN at elevated temperatures – theory and experiment Aip Advances. 7: 095302. DOI: 10.1063/1.4989626  0.406
2017 Look DC, Leach JH, Metzger R. Photo-Hall-effect study of excitation and recombination in Fe-doped GaN Journal of Applied Physics. 121: 065702. DOI: 10.1063/1.4975622  0.338
2017 Slomski M, Paskov PP, Leach JH, Muth JF, Paskova T. Thermal conductivity of bulk GaN grown by HVPE: Effect of Si doping Physica Status Solidi (B). 254: 1600713. DOI: 10.1002/Pssb.201600713  0.359
2016 Brown CG, Bowman SR, Hite JK, Freitas JA, Kub FJ, Eddy CR, Vurgaftman I, Meyer JR, Leach JH, Udwary K. Frequency conversion in free-standing periodically oriented gallium nitride Proceedings of Spie - the International Society For Optical Engineering. 9731. DOI: 10.1117/12.2213447  0.387
2016 Zvanut ME, Dashdorj J, Sunay UR, Leach JH, Udwary K. Effect of local fields on the Mg acceptor in GaN films and GaN substrates Journal of Applied Physics. 120. DOI: 10.1063/1.4963112  0.381
2016 Uždavinys TK, Marcinkevičius S, Leach JH, Evans KR, Look DC. Photoexcited carrier trapping and recombination at Fe centers in GaN Journal of Applied Physics. 119. DOI: 10.1063/1.4953219  0.334
2016 Zvanut ME, Dashdorj J, Freitas JA, Glaser ER, Willoughby WR, Leach JH, Udwary K. Incorporation of Mg in Free-Standing HVPE GaN Substrates Journal of Electronic Materials. 45: 2692-2696. DOI: 10.1007/S11664-016-4413-9  0.387
2016 Tompkins RP, Khan MR, Green R, Jones KA, Leach JH. IVT measurements of GaN power Schottky diodes with drift layers grown by HVPE on HVPE GaN substrates Journal of Materials Science: Materials in Electronics. 1-7. DOI: 10.1007/S10854-016-4536-Z  0.479
2015 Bersch BM, Lin YC, Zhang K, Eichfeld AM, Leach JH, Metzger R, Evans K, Robinson JA. Two-dimensional materials for low power and high frequency devices Proceedings of Spie - the International Society For Optical Engineering. 9467. DOI: 10.1117/12.2177986  0.388
2015 Zhang K, Eichfeld S, Leach J, Metzger B, Lin YC, Evansb K, Robinson JA. Synthesis of two dimensional materials for beyond graphene devices Proceedings of Spie - the International Society For Optical Engineering. 9467. DOI: 10.1117/12.2177985  0.306
2015 Kong W, Jiao WY, Li JC, Collar K, Kim TH, Leach JH, Brown AS. Effect of strain in sputtered AlN buffer layers on the growth of GaN by molecular beam epitaxy Applied Physics Letters. 107. DOI: 10.1063/1.4927245  0.307
2014 Leach JH, Shishkin Y, Udwary K, Preble EA, Evans KR. Large-area bow-free n+ GaN templates by HVPE for LEDs Proceedings of Spie - the International Society For Optical Engineering. 8986. DOI: 10.1117/12.2041642  0.391
2014 Rosales D, Gil B, Bretagnon T, Zhang F, Okur S, Monavarian M, Izioumskaia N, Avrutin V, Özgür U, Morkoç H, Leach JH. Polarized time-resolved photoluminescence measurements of m -plane AlGaN/GaN MQWs Proceedings of Spie - the International Society For Optical Engineering. 8986. DOI: 10.1117/12.2036984  0.473
2014 Rosales D, Gil B, Bretagnon T, Guizal B, Zhang F, Okur S, Monavarian M, Izyumskaya N, Avrutin V, Özgür U, Morkoç H, Leach JH. Excitonic recombination dynamics in non-polar GaN/AlGaN quantum wells Journal of Applied Physics. 115. DOI: 10.1063/1.4865959  0.457
2014 Tompkins RP, Smith JR, Kirchner KW, Jones KA, Leach JH, Udwary K, Preble E, Suvarna P, Leathersich JM, Shahedipour-Sandvik F. GaN power schottky diodes with drift layers grown on four substrates Journal of Electronic Materials. 43: 850-856. DOI: 10.1007/S11664-014-3021-9  0.463
2014 Preble EA, Leach JH, Metzger R, Shishkin E, Udwary KA. 2″-4″ diameter GaN-on-sapphire substrates free of wafer bow at all temperatures Physica Status Solidi (C) Current Topics in Solid State Physics. 11: 604-607. DOI: 10.1002/Pssc.201300554  0.406
2013 Freedman JP, Leach JH, Preble EA, Sitar Z, Davis RF, Malen JA. Universal phonon mean free path spectra in crystalline semiconductors at high temperature. Scientific Reports. 3: 2963. PMID 24129328 DOI: 10.1038/Srep02963  0.359
2013 Leach JH, Metzger R, Preble EA, Evans KR. High voltage, bulk GaN-based photoconductive switches for pulsed power applications Proceedings of Spie - the International Society For Optical Engineering. 8625. DOI: 10.1117/12.2005548  0.321
2013 Okur S, Jarašiūnas K, Hafiz SdA, Leach J, Paskova T, Avrutin V, Morkoç H, Özgür Ü. Recombination dynamics in non-polar m-plane GaN investigated by time- and polarization-resolved photoluminescence Proceedings of Spie. 8625. DOI: 10.1117/12.2005252  0.475
2013 Šimukovič A, Matulionis A, Liberis J, Šermukšnis E, Sakalas P, Zhang F, Leach JH, Avrutin V, Morkoç H. Plasmon-controlled optimum gate bias for GaN heterostructure field-effect transistors Semiconductor Science and Technology. 28. DOI: 10.1088/0268-1242/28/5/055008  0.588
2013 Killat N, Montes Bajo M, Paskova T, Evans KR, Leach J, Li X, Özgür U, Morkoç H, Chabak KD, Crespo A, Gillespie JK, Fitch R, Kossler M, Walker DE, Trejo M, et al. Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges Applied Physics Letters. 103. DOI: 10.1063/1.4829062  0.565
2013 Roberts AT, Mohanta A, Everitt HO, Leach JH, Van Den Broeck D, Hosalli AM, Paskova T, Bedair SM. Spectroscopic investigation of coupling among asymmetric InGaN/GaN multiple quantum wells grown on non-polar a-plane GaN substrates Applied Physics Letters. 103. DOI: 10.1063/1.4827536  0.389
2013 Su Z, Freedman JP, Leach JH, Preble EA, Davis RF, Malen JA. The impact of film thickness and substrate surface roughness on the thermal resistance of aluminum nitride nucleation layers Journal of Applied Physics. 113. DOI: 10.1063/1.4808238  0.369
2013 Tompkins RP, Walsh TA, Derenge MA, Kirchner KW, Zhou S, Nguyen CB, Jones KA, Mulholland G, Metzger R, Leach JH, Suvarna P, Tungare M, Shahedipour-Sandvik F. HVPE GaN for high power electronic Schottky diodes Solid-State Electronics. 79: 238-243. DOI: 10.1016/J.Sse.2012.07.003  0.41
2013 Mcnamara JD, Foussekis MA, Baski AA, Li X, Avrutin V, Morkoç H, Leach JH, Paskova T, Udwary K, Preble E, Reshchikov MA. Electrical and optical properties of bulk GaN substrates studied by Kelvin probe and photoluminescence Physica Status Solidi (C) Current Topics in Solid State Physics. 10: 536-539. DOI: 10.1002/Pssc.201200662  0.499
2012 Jarašiūnas K, Ščajev P, Nargelas S, Aleksiejūnas R, Leach J, Paskova T, Okur S, Özgür Ü, Morkoç H. Recombination and diffusion processes in polar and nonpolar bulk GaN investigated by time-resolved photoluminescence and nonlinear optical techniques Proceedings of Spie. 8262. DOI: 10.1117/12.906303  0.494
2012 Ťapajna M, Killat N, Moereke J, Paskova T, Evans KR, Leach J, Li X, Özgür U, Morkoç H, Chabak KD, Crespo A, Gillespie JK, Fitch R, Kossler M, Walker DE, et al. Non-arrhenius degradation of AlGaN/GaN HEMTs grown on bulk GaN substrates Ieee Electron Device Letters. 33: 1126-1128. DOI: 10.1109/Led.2012.2199278  0.544
2012 Killat N, Montes M, Pomeroy JW, Paskova T, Evans KR, Leach J, Li XN, Özgur U, Morkoç H, Chabak KD, Crespo AK, Gillespie JK, Fitch R, Kossler M, Walker DE, et al. Thermal properties of AlGaN/GaN HFETs on bulk GaN substrates Ieee Electron Device Letters. 33: 366-368. DOI: 10.1109/Led.2011.2179972  0.525
2012 Ščajev P, Jarašiūnas K, Özgür Ü, Morkoç H, Leach J, Paskova T. Anisotropy of free-carrier absorption and diffusivity in m-plane GaN Applied Physics Letters. 100: 022112. DOI: 10.1063/1.3674306  0.489
2011 Liu H, Avrutin V, Zhu C, Leach JH, Rowe E, Zhou L, Smith D, Özgür U, Morkoç H. Three-step deposition method for improvement of the dielectric properties of BST thin films Materials Research Society Symposium Proceedings. 1397: 38-43. DOI: 10.1557/Opl.2012.451  0.555
2011 Matulionis A, Liberis J, Matulionienė I, Šermukšnis E, Leach JH, Wu M, Ni X, Morkoç H. Signature of Hot Phonons in Reliability of Nitride Transistors and Signal Delay Acta Physica Polonica A. 119: 225-227. DOI: 10.12693/Aphyspola.119.225  0.651
2011 Kundrotas J, Cerškus A, Liberis J, Matulionis A, Leach JH, Morkoç AH. Enhancement and narrowing of excitonic lines in AlInN/GaN heterostructures Acta Physica Polonica A. 119: 173-176. DOI: 10.12693/Aphyspola.119.173  0.395
2011 Leach JH, Wu M, Morkoç H, Ramonas M, Matulionis A. Heterostructure designs for enhanced performance and reliability in GaN HFETs: Camelback channels Proceedings of Spie - the International Society For Optical Engineering. 7939. DOI: 10.1117/12.877717  0.563
2011 Gao H, Lee J, Ni X, Leach J, Özgür Ü, Morkoç H. Deep inductively coupled plasma etching of ELO-GaN grown with high fill factor Proceedings of Spie. 7939: 793920. DOI: 10.1117/12.876870  0.602
2011 Leach JH, Biswas N, Paskova T, Preble EA, Evans KR, Wu M, Ni X, Li X, Özgür U, Morkoç H. Effect of substrate offcut on AlGaN/GaN HFET structures on bulk GaN substrates Proceedings of Spie - the International Society For Optical Engineering. 7939. DOI: 10.1117/12.875755  0.644
2011 Kayis C, Leach JH, Zhu CY, Wu M, Li X, Yang X, Misra V, Handel PH, Özgür U, Morkoç H. Low-frequency noise measurements of generation-recombination effect and field-assisted emission in AlGaN/GaN MOSHFETs and HFETs Proceedings of Spie - the International Society For Optical Engineering. 7939. DOI: 10.1117/12.875692  0.506
2011 Leach JH, Wu M, Morko H, Liberis J, Ermuknis E, Ramonas M, Matulionis A. Ultrafast decay of hot phonons in an AlGaN/AlN/AlGaN/GaN camelback channel Journal of Applied Physics. 110. DOI: 10.1063/1.3660264  0.434
2011 Šermukšnis E, Liberis J, Ramonas M, Matulionis A, Leach JH, Wu M, Avrutin V, Morkoç H. Camelback channel for fast decay of LO phonons in GaN heterostructure field-effect transistor at high electron density Applied Physics Letters. 99. DOI: 10.1063/1.3615284  0.565
2011 Kayis C, Leach JH, Zhu CY, Wu M, Li X, Özgür U, Morkoç H, Yang X, Misra V, Handel PH. Measurements of generation-recombination effect by low-frequency phase-noise technique in AlGaN/GaN MOSHFETs Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 1539-1543. DOI: 10.1002/Pssc.201000873  0.499
2011 Matulionis A, Liberis J, Matulioniene I, Šermukšnis E, Leach JH, Wu M, Morkoç H. Novel fluctuation-based approach to optimization of frequency performance and degradation of nitride heterostructure field effect transistors Physica Status Solidi (a) Applications and Materials Science. 208: 30-36. DOI: 10.1002/Pssa.201026361  0.525
2011 Matulionis A, Liberis J, Matulioniene I, Šermukšnis E, Leach JH, Wu M, Ni X, Morkoç H. Signature of hot phonons in reliability of nitride transistors and signal delay Acta Physica Polonica A. 119: 225-227.  0.358
2010 Wu M, Leach JH, Ni X, Li X, Xie J, Doǧan S, Özgür U, Morkoç H, Paskova T, Preble E, Evans KR, Lu CZ. InAlN/GaN heterostructure field-effect transistors on Fe-doped semi-insulating GaN substrates Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 28: 908-911. DOI: 10.1116/1.3481138  0.656
2010 Kayis C, Leach JH, Zhu CY, Wu M, Li X, Özgür U, Morkoç H, Yang X, Misra V, Handel PH. Low-frequency noise measurements of AlGaN/GaN Metal-Oxide-Semiconductor heterostructure field-effect transistors with HfAlO gate dielectric Ieee Electron Device Letters. 31: 1041-1043. DOI: 10.1109/Led.2010.2055823  0.495
2010 Leach JH, Morkoç H. Status of reliability of GaN-based heterojunction field effect transistors Proceedings of the Ieee. 98: 1127-1139. DOI: 10.1109/JPROC.2010.2044858  0.407
2010 Fan Q, Leach JH, Morkoc H. Small signal equivalent circuit modeling for AlGaN/GaN HFET: Hybrid extraction method for determining circuit elements of AlGaN/GaN HFET Proceedings of the Ieee. 98: 1140-1150. DOI: 10.1109/JPROC.2010.2044630  0.365
2010 Gökden S, Tülek R, Teke A, Leach JH, Fan Q, Xie J, Özgür U, Morkoç H, Lisesivdin SB, Özbay E. Mobility limiting scattering mechanisms in nitride-based two-dimensional heterostructures with the InGaN channel Semiconductor Science and Technology. 25. DOI: 10.1088/0268-1242/25/4/045024  0.573
2010 Cheng H, Kurdak C, Leach JH, Wu M, Morko̧ H. Two-subband conduction in a gated high density InAlN/AlN/GaN heterostructure Applied Physics Letters. 97. DOI: 10.1063/1.3490248  0.441
2010 Leach JH, Liu H, Avrutin V, Rowe E, Özgür U, Morko̧ H, Song YY, Wu M. Electrically and magnetically tunable phase shifters based on a barium strontium titanate-yttrium iron garnet layered structure Journal of Applied Physics. 108. DOI: 10.1063/1.3486463  0.572
2010 Leach JH, Liu H, Avrutin V, Xiao B, Özgür U, Morko̧ H, Das J, Song YY, Patton CE. Large dielectric tuning and microwave phase shift at low electric field in epitaxial Ba0.5 Sr0.5 TiO3 on SrTiO3 Journal of Applied Physics. 107. DOI: 10.1063/1.3359707  0.597
2010 Leach JH, Zhu CY, Wu M, Ni X, Li X, Xie J, Özgür U, Morko̧ H, Liberis J, Šermukšnis E, Matulionis A, Paskova T, Preble E, Evans KR. Effect of hot phonon lifetime on electron velocity in InAlN/AlN/GaN heterostructure field effect transistors on bulk GaN substrates Applied Physics Letters. 96. DOI: 10.1063/1.3358392  0.623
2010 Leach JH, Wu M, Ni X, Li X, Xie J, Özgür U, Morko̧ H, Paskova T, Preble E, Evans KR, Lu CZ. Carrier velocity in InAlN/AlN/GaN heterostructure field effect transistors on Fe-doped bulk GaN substrates Applied Physics Letters. 96. DOI: 10.1063/1.3358192  0.616
2010 Leach JH, Ni X, Li X, Wu M, Özgür U, Morko̧ H, Zhou L, Cullen DA, Smith DJ, Cheng H, Kurdak C, Meyer JR, Vurgaftman I. Bias dependent two-channel conduction in InAlN/AlN/GaN structures Journal of Applied Physics. 107. DOI: 10.1063/1.3330627  0.582
2010 Zhou L, Leach JH, Ni X, Morko̧ H, Smith DJ. Ti/Al/Ni/Au Ohmic contacts for AlInN/AlN/GaN-based heterojunction field-effect transistors Journal of Applied Physics. 107. DOI: 10.1063/1.3275241  0.612
2010 Zhou L, Cullen D, Leach J, Ni X, Morkoç H, Smith D, McCartney M. Field Mapping and Ohmic Contacts for AlGaN- or AlInN-Based Heterojunction Field Effect Transistors Microscopy and Microanalysis. 16: 570-571. DOI: 10.1017/S1431927610058629  0.566
2010 Zhou L, Cullen DA, McCartney MR, Leach JH, Fan Q, Morkoç H, Smith DJ. Microstructure and field mapping of AlInN-based heterostructures and devices Physica Status Solidi (C) Current Topics in Solid State Physics. 7: 2436-2439. DOI: 10.1002/Pssc.200983857  0.594
2010 Leach JH, Ni X, Lee J, Özgür Ü, Matulionis A, Morkoç H. Inside Back Cover (Phys. Status Solidi A 5/2010) Physica Status Solidi (a). 207: n/a-n/a. DOI: 10.1002/Pssa.201090012  0.495
2010 Leach JH, Wu M, Ni X, Li X, Özgür U, Morkoç H, Liberis J, Šermukšnis E, Matulionis A, Cheng H, Kurdak C, Moon YT. Stress test measurements of lattice-matched InAlN/AlN/GaN HFET structures applications and materials Physica Status Solidi (a) Applications and Materials Science. 207: 1345-1347. DOI: 10.1002/Pssa.200983556  0.663
2010 Leach JH, Ni X, Lee J, ÖZgür U, Matulionis A, Morkoç H. New twists in LEDs and HFETs based on nitride semiconductors Physica Status Solidi (a) Applications and Materials Science. 207: 1091-1100. DOI: 10.1002/Pssa.200983107  0.64
2010 Leach JH, Wu M, Ni X, Li X, Özgür U, Morkoç H. Effect of lattice mismatch on gate lag in high quality InAlN/AlN/GaN HFET structures Physica Status Solidi (a) Applications and Materials Science. 207: 211-216. DOI: 10.1002/Pssa.200925362  0.636
2009 Leach JH, Morkoç H, Ke Y, Devaty RP, Choyke WJ. Novel use of columnar porous silicon carbide structures as nanoimprint lithography stamps Materials Science Forum. 600: 871-874. DOI: 10.4028/Www.Scientific.Net/Msf.600-603.871  0.46
2009 Johnstone D, Leach JH, Kovalskii VA, Fan Q, Xie J, Morkoç H. Electrical defects in AlGaN and InAlN Proceedings of Spie - the International Society For Optical Engineering. 7216. DOI: 10.1117/12.815020  0.457
2009 Fan Q, Leach JH, Xie J, Ozgur U, Morkoç H, Zhou L, Smith DJ. Two dimensional electron gas in GaN heterojunction field effect transistors structures with AlN spacer Proceedings of Spie - the International Society For Optical Engineering. 7216. DOI: 10.1117/12.811678  0.372
2009 Leach JH, Fan Q, Xie J, Wu M, Özgür U, Morkoç H. Transient current spectroscopy of lattice matched InAlN/AlN/GaN HFETs for identification of traps resulting in gate lag Proceedings of Spie - the International Society For Optical Engineering. 7216. DOI: 10.1117/12.809795  0.477
2009 Teke A, Gökden S, Tülek R, Leach JH, Fan Q, Xie J, Özgür U, Morkoç H, Lisesivdin SB, Özbay E. The effect of AIN interlayer thicknesses on scattering processes in lattice-matched AllnN/GaN two-dimensional electron gas heterostructures New Journal of Physics. 11. DOI: 10.1088/1367-2630/11/6/063031  0.685
2009 Leach JH, Zhu CY, Wu M, Ni X, Li X, Xie J, Özgür U, Morko̧ H, Liberis J, Šermukšnis E, Matulionis A, Cheng H, Kurdak C. Degradation in InAlN/GaN-based heterostructure field effect transistors: Role of hot phonons Applied Physics Letters. 95. DOI: 10.1063/1.3271183  0.711
2009 Xiao B, Liu H, Avrutin V, Leach JH, Rowe E, Özgür U, Morkoç H, Chang W, Alldredge LMB, Kirchoefer SW, Pond JM. Epitaxial growth of (001)-oriented Ba0.5Sr0.5TiO 3 thin films on a-plane sapphire with an MgO/ZnO bridge layer Applied Physics Letters. 95. DOI: 10.1063/1.3266862  0.637
2009 Matulionis A, Liberis J, Matulionien I, Ramonas M, Šermukšnis E, Leach JH, Wu M, Ni X, Li X, Morko̧ H. Plasmon-enhanced heat dissipation in GaN-based two-dimensional channels Applied Physics Letters. 95. DOI: 10.1063/1.3261748  0.575
2009 Ardaravičius L, Ramonas M, Liberis J, Kiprijanovič O, Matulionis A, Xie J, Wu M, Leach JH, Morko̧ H. Electron drift velocity in lattice-matched AlInN/AlN/GaN channel at high electric fields Journal of Applied Physics. 106. DOI: 10.1063/1.3236569  0.448
2009 Xiao B, Avrutin V, Liu H, Rowe E, Leach J, Gu X, Özgür Ü, Morkoç H, Chang W, Alldredge LMB, Kirchoefer SW, Pond JM. Effect of large strain on dielectric and ferroelectric properties of Ba0.5Sr0.5TiO3 thin films Applied Physics Letters. 95: 012907. DOI: 10.1063/1.3151961  0.459
2009 Ardaravičius L, Liberis J, Kiprijanovič O, Ramonas M, Matulionis A, Xie J, Wu M, Leach JH, Morkoç H. Strain dependent electron drift velocity in Al1-xin xN/AlN/GaN Physica Status Solidi (C) Current Topics in Solid State Physics. 6: 2635-2637. DOI: 10.1002/Pssc.200982533  0.562
2009 Ni X, Shimada R, Kang TD, Leach JH, Özgür U, Morkoç H. GaN-based vertical cavities with crack-free high-reflectivity patterned AlGaN/GaN distributed Bragg reflectors Physica Status Solidi (a) Applications and Materials Science. 206: 367-370. DOI: 10.1002/Pssa.200824377  0.581
2009 Liberis J, Matulioniene I, Matulionis A, Sermuksnis E, Xie J, Leach JH, Morkoc H. InAlN-barrier HFETs with GaN and InGaN channels Physica Status Solidi (a) Applications and Materials Science. 206: 1385-1395. DOI: 10.1002/Pssa.200824287  0.541
2008 Xie J, Ni X, Wu M, Leach JH, Özgür U, Morkoç H. AlxIn1-xN/GaN heterostructure field effect transistors Proceedings of Spie - the International Society For Optical Engineering. 6894. DOI: 10.1117/12.771297  0.4
2008 Fan Q, Leach JH, Wu M, Xiao B, Gu X, Morkoç H, Handel PH. Comparison of various gate dielectrics on the performance of AlGaN/GaN HFETS Proceedings of Spie - the International Society For Optical Engineering. 6894. DOI: 10.1117/12.763688  0.337
2008 Ni X, Shimada R, Leach JH, Xie J, Özgür U, Morkoç H. Optical properties of polar, nonpolar, and semipolar InGaN/GaN multiple quantum wells on sapphire Proceedings of Spie - the International Society For Optical Engineering. 6894. DOI: 10.1117/12.763260  0.415
2008 Matulionis A, Liberis J, Šermukšnis E, Xie J, Leach JH, Wu M, Morkoç H. Hot-electron energy relaxation time in AlInN/AlN/GaN 2DEG channels Semiconductor Science and Technology. 23. DOI: 10.1088/0268-1242/23/7/075048  0.68
2007 Leach JH, Morkoç H. A General Nonlithographic Method for Producing Nanodots by RIE Etching Mrs Proceedings. 1059. DOI: 10.1557/Proc-1059-Kk10-10  0.443
2007 Leach JH, Özgür Ü, Morkoç H. Photoelectrochemical Etching of GaN Thin Films With Varying Carrier Concentrations Mrs Proceedings. 1040. DOI: 10.1557/Proc-1040-Q11-02  0.504
2007 Leach JH, Özgür U, Morkoç H. Evolution of surface morphology of GaN thin films during photoelectrochemical etching Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 25: 1832-1835. DOI: 10.1116/1.2794055  0.502
2007 Xie J, Leach JH, Ni X, Wu M, Shimada R, Özgür U, Morko̧ H. Electron mobility in InGaN channel heterostructure field effect transistor structures with different barriers Applied Physics Letters. 91. DOI: 10.1063/1.2824461  0.591
2007 Xie J, Ni X, Wu M, Leach JH, Özgür U, Morko̧ H. High electron mobility in nearly lattice-matched AlInNAlNGaN heterostructure field effect transistors Applied Physics Letters. 91. DOI: 10.1063/1.2794419  0.702
2007 Zhu K, Johnstone D, Leach J, Fu Y, Morkoç H, Li G, Ganguly B. High power photoconductive switches of 4H SiC with Si3N4 passivation and n+ -GaN subcontact Superlattices and Microstructures. 41: 264-270. DOI: 10.1016/J.Spmi.2007.02.002  0.53
2006 Zhu K, Li G, Johnstone D, Fu Y, Leach JH, Ganguly B, Litton CW, Morkoç H. High Power Photoconductive Switch of 4H-SiC with Damage-Free Electrodes by Using n+-GaN Subcontact Layer Materials Science Forum. 1387-1390. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.1387  0.504
2006 Avrutin V, Ozgur U, Izyumskaya N, Chevtchenko S, Leach J, Moore JC, Baski AA, Everitt HO, Tsen K, Ruterana P, Morkoc H. Morphology and Optical Properties of ZnO Nanorods Grown by Catalyst-assisted Vapor Transport on Various Substrates Mrs Proceedings. 963. DOI: 10.1557/Proc-0963-Q15-20  0.498
2005 Zhu K, Doğan S, Moon YT, Leach J, Yun F, Johnstone D, Morkoç H, Li G, Ganguly B. Effect of n+-GaN subcontact layer on 4H–SiC high-power photoconductive switch Applied Physics Letters. 86: 261108. DOI: 10.1063/1.1951056  0.521
2005 Johnstone D, Dogan S, Moon YT, Fu Y, Xu J, Yun F, Leach J, Morkoç H. Deep levels in KOH etched and MOCVD regrown GaN p-n junctions Physica Status Solidi (C). 2: 2454-2457. DOI: 10.1002/Pssc.200461507  0.56
2004 Johnstone D, Doğan S, Leach J, Moon YT, Fu Y, Hu Y, Morkoç H. Thermal stability of electron traps in GaN grown by metalorganic chemical vapor deposition Applied Physics Letters. 85: 4058-4060. DOI: 10.1063/1.1814801  0.49
2004 Doğan S, Johnstone D, Yun F, Sabuktagin S, Leach J, Baski AA, Morkoç H, Li G, Ganguly B. The effect of hydrogen etching on 6H-SiC studied by temperature-dependent current-voltage and atomic force microscopy Applied Physics Letters. 85: 1547-1549. DOI: 10.1063/1.1786632  0.468
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