Jinqiao Xie, Ph.D.
Affiliations: | 2007 | Virginia Commonwealth University, Richmond, VA, United States |
Area:
Electronics and Electrical EngineeringGoogle:
"Jinqiao Xie"Parents
Sign in to add mentor| Hadis Morkoç | grad student | 2007 | VCU | |
| (Low dislocation density gallium nitride templates and their device applications.) | ||||
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Publications
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| Xiao M, Du Z, Xie J, et al. (2020) Lateral p-GaN/2DEG junction diodes by selective-area p-GaN trench-filling-regrowth in AlGaN/GaN Applied Physics Letters. 116: 53503 |
| Ciarkowski T, Allen N, Carlson E, et al. (2019) Connection between Carbon Incorporation and Growth Rate for GaN Epitaxial Layers Prepared by OMVPE. Materials (Basel, Switzerland). 12 |
| Wang J, McCarthy R, Youtsey C, et al. (2019) Ion‐Implant Isolated Vertical GaN p‐n Diodes Fabricated with Epitaxial Lift‐Off From GaN Substrates (Phys. Status Solidi A 4∕2019) Physica Status Solidi (a). 216: 1970019 |
| Wang J, McCarthy R, Youtsey C, et al. (2019) Ion‐Implant Isolated Vertical GaN p‐n Diodes Fabricated with Epitaxial Lift‐Off From GaN Substrates Physica Status Solidi (a). 216: 1800652 |
| Wang J, McCarthy R, Youtsey C, et al. (2018) High-Voltage Vertical GaN p-n Diodes by Epitaxial Liftoff From Bulk GaN Substrates Ieee Electron Device Letters. 39: 1716-1719 |
| Amano H, Baines Y, Beam E, et al. (2018) The 2018 GaN power electronics roadmap Journal of Physics D: Applied Physics. 51: 163001 |
| Wang J, Cao L, Xie J, et al. (2018) High voltage, high current GaN-on-GaN p-n diodes with partially compensated edge termination Applied Physics Letters. 113: 23502 |
| Wang J, Youtsey C, McCarthy R, et al. (2017) Thin-film GaN Schottky diodes formed by epitaxial lift-off Applied Physics Letters. 110: 173503 |
| Bryan Z, Bryan I, Xie J, et al. (2015) High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates Applied Physics Letters. 106 |
| Gaddy BE, Bryan Z, Bryan I, et al. (2014) The role of the carbon-silicon complex in eliminating deep ultraviolet absorption in AlN Applied Physics Letters. 104 |