☰

Seiji Mita, Ph.D. - Publications

Affiliations: 
2007 North Carolina State University, Raleigh, NC 
Area:
Materials Science Engineering
Tree Info Similar researchers PubMed Report error

92 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Guo Q, Kirste R, Reddy P, Mecouch W, Guan Y, Mita S, Washiyama S, Tweedie J, Sitar Z, Collazo R. Impact of the effective refractive index in AlGaN-based mid-UV laser structures on waveguiding Japanese Journal of Applied Physics. 59: 91001. DOI: 10.35848/1347-4065/Abab44  0.619
2020 Bagheri P, Kirste R, Reddy P, Washiyama S, Mita S, Sarkar B, Collazo R, Sitar Z. The nature of the DX state in Ge-doped AlGaN Applied Physics Letters. 116: 222102. DOI: 10.1063/5.0008362  0.657
2020 Washiyama S, Guan Y, Mita S, Collazo R, Sitar Z. Recovery kinetics in high temperature annealed AlN heteroepitaxial films Journal of Applied Physics. 127: 115301. DOI: 10.1063/5.0002891  0.663
2020 Hayden Breckenridge M, Guo Q, Klump A, Sarkar B, Guan Y, Tweedie J, Kirste R, Mita S, Reddy P, Collazo R, Sitar Z. Shallow Si donor in ion-implanted homoepitaxial AlN Applied Physics Letters. 116: 172103. DOI: 10.1063/1.5144080  0.645
2020 Reddy P, Bryan Z, Bryan I, Kim JH, Washiyama S, Kirste R, Mita S, Tweedie J, Irving DL, Sitar Z, Collazo R. Pinning of energy transitions of defects, complexes, and surface states in AlGaN alloys Applied Physics Letters. 116: 032102. DOI: 10.1063/1.5140995  0.638
2020 Reddy P, Hayden Breckenridge M, Guo Q, Klump A, Khachariya D, Pavlidis S, Mecouch W, Mita S, Moody B, Tweedie J, Kirste R, Kohn E, Collazo R, Sitar Z. High gain, large area, and solar blind avalanche photodiodes based on Al-rich AlGaN grown on AlN substrates Applied Physics Letters. 116: 081101. DOI: 10.1063/1.5138127  0.667
2020 Washiyama S, Reddy P, Sarkar B, Breckenridge MH, Guo Q, Bagheri P, Klump A, Kirste R, Tweedie J, Mita S, Sitar Z, Collazo R. The role of chemical potential in compensation control in Si:AlGaN Journal of Applied Physics. 127: 105702. DOI: 10.1063/1.5132953  0.683
2019 Guo Q, Kirste R, Mita S, Tweedie J, Reddy P, Washiyama S, Breckenridge MH, Collazo R, Sitar Z. The polarization field in Al-rich AlGaN multiple quantum wells Japanese Journal of Applied Physics. 58: SCCC10. DOI: 10.7567/1347-4065/Ab07A9  0.662
2019 Guo Q, Kirste R, Mita S, Tweedie J, Reddy P, Moody B, Guan Y, Washiyama S, Klump A, Sitar Z, Collazo R. Design of AlGaN-based quantum structures for low threshold UVC lasers Journal of Applied Physics. 126: 223101. DOI: 10.1063/1.5125256  0.683
2019 Chichibu SF, Kojima K, Hazu K, Ishikawa Y, Furusawa K, Mita S, Collazo R, Sitar Z, Uedono A. In-plane optical polarization and dynamic properties of the near-band-edge emission of an m-plane freestanding AlN substrate and a homoepitaxial film Applied Physics Letters. 115: 151903. DOI: 10.1063/1.5116900  0.703
2019 Alden D, Troha T, Kirste R, Mita S, Guo Q, Hoffmann A, Zgonik M, Collazo R, Sitar Z. Quasi-phase-matched second harmonic generation of UV light using AlN waveguides Applied Physics Letters. 114: 103504. DOI: 10.1063/1.5087058  0.661
2019 Houston Dycus J, Washiyama S, Eldred TB, Guan Y, Kirste R, Mita S, Sitar Z, Collazo R, LeBeau JM. The role of transient surface morphology on composition control in AlGaN layers and wells Applied Physics Letters. 114: 031602. DOI: 10.1063/1.5063933  0.705
2018 Dycus JH, Mirrielees KJ, Grimley ED, Kirste R, Mita S, Sitar Z, Collazo R, Irving D, LeBeau JM. Structure of Ultra-thin Native Oxides on III-Nitride Surfaces. Acs Applied Materials & Interfaces. PMID 29558103 DOI: 10.1021/Acsami.8B00845  0.662
2018 Kirste R, Guo Q, Dycus JH, Franke A, Mita S, Sarkar B, Reddy P, LeBeau JM, Collazo R, Sitar Z. 6 kW/cm2 UVC laser threshold in optically pumped lasers achieved by controlling point defect formation Applied Physics Express. 11: 082101. DOI: 10.7567/Apex.11.082101  0.662
2018 Alden D, Harris J, Bryan Z, Baker J, Reddy P, Mita S, Callsen G, Hoffmann A, Irving D, Collazo R, Sitar Z. Point-Defect Nature of the Ultraviolet Absorption Band in AlN Physical Review Applied. 9. DOI: 10.1103/Physrevapplied.9.054036  0.63
2018 Washiyama S, Reddy P, Kaess F, Kirste R, Mita S, Collazo R, Sitar Z. A thermodynamic supersaturation model for the growth of aluminum gallium nitride by metalorganic chemical vapor deposition Journal of Applied Physics. 124: 115304. DOI: 10.1063/1.5045058  0.677
2018 Dhall R, Vigil-Fowler D, Houston Dycus J, Kirste R, Mita S, Sitar Z, Collazo R, LeBeau JM. Probing collective oscillation ofd-orbital electrons at the nanoscale Applied Physics Letters. 112: 061102. DOI: 10.1063/1.5012742  0.643
2018 Bryan I, Bryan Z, Washiyama S, Reddy P, Gaddy B, Sarkar B, Breckenridge MH, Guo Q, Bobea M, Tweedie J, Mita S, Irving D, Collazo R, Sitar Z. Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD Applied Physics Letters. 112: 062102. DOI: 10.1063/1.5011984  0.693
2017 Sarkar B, Reddy P, Kaess F, Haidet B, Tweedie J, Mita S, Kirste R, Kohn E, Collazo R, Sitar Z. (Invited) Material Considerations for the Development of III-Nitride Power Devices Ecs Transactions. 80: 29-36. DOI: 10.1149/08007.0029ECST  0.379
2017 Reddy P, Washiyama S, Kaess F, Kirste R, Mita S, Collazo R, Sitar Z. Point defect reduction in MOCVD (Al)GaN by chemical potential control and a comprehensive model of C incorporation in GaN Journal of Applied Physics. 122: 245702. DOI: 10.1063/1.5002682  0.692
2017 Reddy P, Kaess F, Tweedie J, Kirste R, Mita S, Collazo R, Sitar Z. Defect quasi Fermi level control-based CN reduction in GaN: Evidence for the role of minority carriers Applied Physics Letters. 111: 152101. DOI: 10.1063/1.5000720  0.66
2017 Sarkar B, Mita S, Reddy P, Klump A, Kaess F, Tweedie J, Bryan I, Bryan Z, Kirste R, Kohn E, Collazo R, Sitar Z. High free carrier concentration in p-GaN grown on AlN substrates Applied Physics Letters. 111: 032109. DOI: 10.1063/1.4995239  0.691
2017 Dycus JH, Mirrielees KJ, Grimley ED, Dhall R, Kirste R, Mita S, Sitar Z, Collazo R, Irving DL, LeBeau JM. Structure and Chemistry of Oxide Surface Reconstructions in III-Nitrides Observed using STEM EELS Microscopy and Microanalysis. 23: 1444-1445. DOI: 10.1017/S1431927617007887  0.62
2017 Sarkar B, Reddy P, Klump A, Kaess F, Rounds R, Kirste R, Mita S, Kohn E, Collazo R, Sitar Z. On Ni/Au Alloyed Contacts to Mg-Doped GaN Journal of Electronic Materials. 47: 305-311. DOI: 10.1007/S11664-017-5775-3  0.653
2016 Troha T, Rigler M, Alden D, Bryan I, Guo W, Kirste R, Mita S, Gerhold MD, Collazo R, Sitar Z, Zgonik M. UV second harmonic generation in AlN waveguides with modal phase matching Optical Materials Express. 6: 2014. DOI: 10.1364/Ome.6.002014  0.669
2016 Reddy P, Hoffmann MP, Kaess F, Bryan Z, Bryan I, Bobea M, Klump A, Tweedie J, Kirste R, Mita S, Gerhold M, Collazo R, Sitar Z. Point defect reduction in wide bandgap semiconductors by defect quasi Fermi level control Journal of Applied Physics. 120: 185704. DOI: 10.1063/1.4967397  0.645
2016 Kaess F, Mita S, Xie J, Reddy P, Klump A, Hernandez-Balderrama LH, Washiyama S, Franke A, Kirste R, Hoffmann A, Collazo R, Sitar Z. Correlation between mobility collapse and carbon impurities in Si-doped GaN grown by low pressure metalorganic chemical vapor deposition Journal of Applied Physics. 120: 105701. DOI: 10.1063/1.4962017  0.684
2016 Alden D, Guo W, Kirste R, Kaess F, Bryan I, Troha T, Bagal A, Reddy P, Hernandez-Balderrama LH, Franke A, Mita S, Chang C, Hoffmann A, Zgonik M, Collazo R, et al. Fabrication and structural properties of AlN submicron periodic lateral polar structures and waveguides for UV-C applications Applied Physics Letters. 108: 261106. DOI: 10.1063/1.4955033  0.709
2016 Bryan I, Bryan Z, Mita S, Rice A, Hussey L, Shelton C, Tweedie J, Maria J, Collazo R, Sitar Z. The role of surface kinetics on composition and quality of AlGaN Journal of Crystal Growth. 451: 65-71. DOI: 10.1016/J.Jcrysgro.2016.06.055  0.813
2016 Bryan I, Bryan Z, Mita S, Rice A, Tweedie J, Collazo R, Sitar Z. Surface kinetics in AlN growth: A universal model for the control of surface morphology in III-nitrides Journal of Crystal Growth. 438: 81-89. DOI: 10.1016/J.Jcrysgro.2015.12.022  0.682
2015 Rigler M, Buh J, Hoffmann MP, Kirste R, Bobea M, Mita S, Gerhold MD, Collazo R, Sitar Z, Zgonik M. Optical characterization of Al- and N-polar AlN waveguides for integrated optics Applied Physics Express. 8. DOI: 10.7567/Apex.8.042603  0.707
2015 Losego MD, Paisley EA, Craft HS, Lam PG, Sachet E, Mita S, Collazo R, Sitar Z, Maria JP. Selective area epitaxy of magnesium oxide thin films on gallium nitride surfaces Journal of Materials Research. DOI: 10.1557/Jmr.2015.332  0.691
2015 Reddy P, Bryan I, Bryan Z, Tweedie J, Washiyama S, Kirste R, Mita S, Collazo R, Sitar Z. Charge neutrality levels, barrier heights, and band offsets at polar AlGaN Applied Physics Letters. 107. DOI: 10.1063/1.4930026  0.705
2015 Bryan Z, Bryan I, Mita S, Tweedie J, Sitar Z, Collazo R. Strain dependence on polarization properties of AlGaN and AlGaN-based ultraviolet lasers grown on AlN substrates Applied Physics Letters. 106. DOI: 10.1063/1.4922385  0.708
2015 Bryan Z, Bryan I, Xie J, Mita S, Sitar Z, Collazo R. High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates Applied Physics Letters. 106. DOI: 10.1063/1.4917540  0.705
2014 Guo W, Bryan Z, Xie J, Kirste R, Mita S, Bryan I, Hussey L, Bobea M, Haidet B, Gerhold M, Collazo R, Sitar Z. Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates Journal of Applied Physics. 115: 103108. DOI: 10.1063/1.4868678  0.804
2014 Hussey L, White RM, Kirste R, Mita S, Bryan I, Guo W, Osterman K, Haidet B, Bryan Z, Bobea M, Collazo R, Sitar Z. Sapphire decomposition and inversion domains in N-polar aluminum nitride Applied Physics Letters. 104. DOI: 10.1063/1.4862982  0.808
2014 Paisley EA, Gaddy BE, Lebeau JM, Shelton CT, Biegalski MD, Christen HM, Losego MD, Mita S, Collazo R, Sitar Z, Irving DL, Maria JP. Smooth cubic commensurate oxides on gallium nitride Journal of Applied Physics. 115. DOI: 10.1063/1.4861172  0.717
2014 Hussey L, Bryan I, Kirste R, Guo W, Bryan Z, Mita S, Collazo R, Sitar Z. Direct observation of the polarity control mechanism in aluminum nitride grown on sapphire by aberration corrected scanning transmission electron microscopy Microscopy and Microanalysis. 20: 162-163. DOI: 10.1017/S1431927614002530  0.797
2014 Kirste R, Mita S, Hoffmann MP, Hussey L, Guo W, Bryan I, Bryan Z, Tweedie J, Gerhold M, Hoffmann A, Collazo R, Sitar Z. Properties of AlN based lateral polarity structures Physica Status Solidi (C). 11: 261-264. DOI: 10.1002/Pssc.201300287  0.825
2014 Hoffmann MP, Kirste R, Mita S, Guo W, Tweedie J, Bobea M, Bryan I, Bryan Z, Gerhold M, Collazo R, Sitar Z. Growth and characterization of Al x Ga1−x N lateral polarity structures Physica Status Solidi (a). 212: 1039-1042. DOI: 10.1002/Pssa.201431740  0.697
2013 Kinoshita T, Obata T, Nagashima T, Yanagi H, Moody B, Mita S, Inoue SI, Kumagai Y, Koukitu A, Sitar Z. Performance and reliability of deep-ultraviolet light-emitting diodes fabricated on AlN substrates prepared by hydride vapor phase epitaxy Applied Physics Express. 6. DOI: 10.7567/Apex.6.092103  0.539
2013 Hoffmann MP, Gerhold M, Kirste R, Rice A, Akouala C, Xie JQ, Mita S, Collazo R, Sitar Z. Fabrication and characterization of lateral polar GaN structures for second harmonic generation Proceedings of Spie. 8631. DOI: 10.1117/12.2008827  0.747
2013 Chichibu SF, Hazu K, Ishikawa Y, Tashiro M, Ohtomo T, Furusawa K, Uedono A, Mita S, Xie J, Collazo R, Sitar Z. Excitonic emission dynamics in homoepitaxial AlN films studied using polarized and spatio-time-resolved cathodoluminescence measurements Applied Physics Letters. 103: 142103. DOI: 10.1063/1.4823826  0.696
2013 Neuschl B, Thonke K, Feneberg M, Goldhahn R, Wunderer T, Yang Z, Johnson NM, Xie J, Mita S, Rice A, Collazo R, Sitar Z. Direct determination of the silicon donor ionization energy in homoepitaxial AlN from photoluminescence two-electron transitions Applied Physics Letters. 103. DOI: 10.1063/1.4821183  0.659
2013 Kirste R, Mita S, Hussey L, Hoffmann MP, Guo W, Bryan I, Bryan Z, Tweedie J, Xie J, Gerhold M, Collazo R, Sitar Z. Polarity control and growth of lateral polarity structures in AlN Applied Physics Letters. 102: 181913. DOI: 10.1063/1.4804575  0.823
2013 Xie J, Mita S, Bryan Z, Guo W, Hussey L, Moody B, Schlesser R, Kirste R, Gerhold M, Collazo R, Sitar Z. Lasing and longitudinal cavity modes in photo-pumped deep ultraviolet AlGaN heterostructures Applied Physics Letters. 102. DOI: 10.1063/1.4803689  0.79
2013 Rigler M, Zgonik M, Hoffmann MP, Kirste R, Bobea M, Collazo R, Sitar Z, Mita S, Gerhold M. Refractive index of III-metal-polar and N-polar AlGaN waveguides grown by metal organic chemical vapor deposition Applied Physics Letters. 102. DOI: 10.1063/1.4800554  0.699
2013 Bryan I, Rice A, Hussey L, Bryan Z, Bobea M, Mita S, Xie J, Kirste R, Collazo R, Sitar Z. Strain relaxation by pitting in AlN thin films deposited by metalorganic chemical vapor deposition Applied Physics Letters. 102. DOI: 10.1063/1.4792694  0.801
2013 Guo W, Xie J, Akouala C, Mita S, Rice A, Tweedie J, Bryan I, Collazo R, Sitar Z. Comparative study of etching high crystalline quality AlN and GaN Journal of Crystal Growth. 366: 20-25. DOI: 10.1016/J.Jcrysgro.2012.12.141  0.707
2012 Hussey L, Mita S, Xie J, Guo W, Akouala CR, Rajan J, Bryan I, Collazo R, Sitar Z. Lateral epitaxial overgrowth of nitrogen polar GaN on smooth nitrogen polar GaN templates by metalorganic chemical vapor deposition Journal of Applied Physics. 112. DOI: 10.1063/1.4768526  0.83
2012 Paisley EA, Shelton TC, Mita S, Collazo R, Christen HM, Sitar Z, Biegalski MD, Maria JP. Surfactant assisted growth of MgO films on GaN Applied Physics Letters. 101. DOI: 10.1063/1.4748886  0.717
2012 Bryan Z, Hoffmann M, Tweedie J, Kirste R, Callsen G, Bryan I, Rice A, Bobea M, Mita S, Xie J, Sitar Z, Collazo R. Fermi Level Control of Point Defects During Growth of Mg-Doped GaN Journal of Electronic Materials. 42: 815-819. DOI: 10.1007/S11664-012-2342-9  0.68
2012 Tweedie J, Collazo R, Rice A, Mita S, Xie J, Akouala RC, Sitar Z. Schottky barrier and interface chemistry for Ni contacted to Al 0.8Ga 0.2N grown on c-oriented AlN single crystal substrates Physica Status Solidi (C) Current Topics in Solid State Physics. 9: 584-587. DOI: 10.1002/Pssc.201100435  0.709
2012 Neuschl B, Thonke K, Feneberg M, Mita S, Xie J, Dalmau R, Collazo R, Sitar Z. Optical identification of silicon as a shallow donor in MOVPE grown homoepitaxial AlN Physica Status Solidi (B). 249: 511-515. DOI: 10.1002/Pssb.201100381  0.783
2011 Dalmau R, Moody B, Schlesser R, Mita S, Xie J, Feneberg M, Neuschl B, Thonke K, Collazo R, Rice A, Tweedie J, Sitar Z. Growth and characterization of AlN and AlGaN epitaxial films on AlN single crystal substrates Journal of the Electrochemical Society. 158: H530-H535. DOI: 10.1149/1.3560527  0.787
2011 Washiyama S, Mita S, Suzuki K, Sawabe A. Coalescence of epitaxial lateral overgrowth-diamond on stripe-patterned nucleation on Ir/MgO(001) Applied Physics Express. 4. DOI: 10.1143/Apex.4.095502  0.418
2011 Xie J, Mita S, Collazo R, Rice A, Tweedie J, Sitar Z. Fermi level effect on strain of Si-doped GaN Proceedings of Spie - the International Society For Optical Engineering. 7939. DOI: 10.1117/12.878726  0.688
2011 Xie J, Mita S, Hussey L, Rice A, Tweedie J, Lebeau J, Collazo R, Sitar Z. On the strain in n-type GaN Applied Physics Letters. 99. DOI: 10.1063/1.3647772  0.807
2011 Xie J, Mita S, Rice A, Tweedie J, Hussey L, Collazo R, Sitar Z. Strain in Si doped GaN and the Fermi level effect Applied Physics Letters. 98. DOI: 10.1063/1.3589978  0.791
2011 Mita S, Collazo R, Rice A, Tweedie J, Xie J, Dalmau R, Sitar Z. Impact of gallium supersaturation on the growth of N-polar GaN Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 2078-2080. DOI: 10.1002/Pssc.201001063  0.808
2011 Collazo R, Mita S, Xie J, Rice A, Tweedie J, Dalmau R, Sitar Z. Progress on n-type doping of algan alloys on aln single crystal substrates for uv optoelectronic applications Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 2031-2033. DOI: 10.1002/Pssc.201000964  0.799
2011 Feneberg M, Neuschl B, Thonke K, Collazo R, Rice A, Sitar Z, Dalmau R, Xie J, Mita S, Goldhahn R. Sharp bound and free exciton lines from homoepitaxial AlN Physica Status Solidi (a). 208: 1520-1522. DOI: 10.1002/Pssa.201000947  0.759
2010 Losego MD, Craft HS, Paisley EA, Mita S, Collazo R, Sitar Z, Maria JP. Critical examination of growth rate for magnesium oxide (MgO) thin films deposited by molecular beam epitaxy with a molecular oxygen flux Journal of Materials Research. 25: 670-679. DOI: 10.1557/Jmr.2010.0096  0.691
2010 Xie J, Mita S, Collazo R, Rice A, Tweedie J, Sitar Z. The effect of N-polar GaN domains as Ohmic contacts Applied Physics Letters. 97. DOI: 10.1063/1.3491173  0.73
2010 Rice A, Collazo R, Tweedie J, Dalmau R, Mita S, Xie J, Sitar Z. Surface preparation and homoepitaxial deposition of AlN on (0001)-oriented AlN substrates by metalorganic chemical vapor deposition Journal of Applied Physics. 108. DOI: 10.1063/1.3467522  0.798
2010 Tweedie J, Collazo R, Rice A, Xie J, Mita S, Dalmau R, Sitar Z. X-ray characterization of composition and relaxation of Alx Ga1-xN (0<x<1) layers grown on GaN/sapphire templates by low pressure organometallic vapor phase epitaxy Journal of Applied Physics. 108. DOI: 10.1063/1.3457149  0.786
2010 Rice A, Collazo R, Tweedie J, Xie J, Mita S, Sitar Z. Linear dependency of Al-mole fraction with group-III precursor flows in AlxGa1-xN (0≤x≤1) deposition by LP OMVPE Journal of Crystal Growth. 312: 1321-1324. DOI: 10.1016/J.Jcrysgro.2009.09.011  0.676
2010 Collazo R, Mita S, Xie J, Rice A, Tweedie J, Dalmau R, Sitar Z. Implementation of the GaN lateral polarity junction in a MESFET utilizing polar doping selectivity Physica Status Solidi (a) Applications and Materials Science. 207: 45-48. DOI: 10.1002/Pssa.200982629  0.806
2009 Mita S, Collazo R, Sitar Z. Fabrication of a GaN lateral polarity junction by metalorganic chemical vapor deposition Journal of Crystal Growth. 311: 3044-3048. DOI: 10.1016/J.Jcrysgro.2009.01.075  0.73
2009 Losego MD, Fitting Kourkoutis L, Mita S, Craft HS, Muller DA, Collazo R, Sitar Z, Maria JP. Epitaxial Ba0.5Sr0.5TiO3-GaN heterostructures with abrupt interfaces Journal of Crystal Growth. 311: 1106-1109. DOI: 10.1016/J.Jcrysgro.2008.11.085  0.718
2008 Mita S, Collazo R, Rice A, Dalmau RF, Sitar Z. Influence of gallium supersaturation on the properties of GaN grown by metalorganic chemical vapor deposition Journal of Applied Physics. 104. DOI: 10.1063/1.2952027  0.785
2008 Craft HS, Collazo R, Losego MD, Mita S, Sitar Z, Maria JP. Spectroscopic analysis of the epitaxial CaO (111)-GaN (0002) interface Applied Physics Letters. 92. DOI: 10.1063/1.2887878  0.692
2008 Dietz N, Alevli M, Atalay R, Durkaya G, Collazo R, Tweedie J, Mita S, Sitar Z. The influence of substrate polarity on the structural quality of InN layers grown by high-pressure chemical vapor deposition Applied Physics Letters. 92. DOI: 10.1063/1.2840192  0.738
2008 Liu F, Collazo R, Mita S, Duscher G, Pennycook S. Erratum: “The mechanism for polarity inversion of GaN via a thin AlN layer: Direct experimental evidence” [Appl. Phys. Lett. 91, 203115 (2007)] Applied Physics Letters. 92: 029901. DOI: 10.1063/1.2836941  0.609
2008 Losego MD, Mita S, Collazo R, Sitar Z, Maria JP. Epitaxial growth of the metastable phase ytterbium monoxide on gallium nitride surfaces Journal of Crystal Growth. 310: 51-56. DOI: 10.1016/J.Jcrysgro.2007.10.002  0.7
2008 Collazo R, Mita S, Rice A, Dalmau R, Wellenius P, Muth J, Sitar Z. Fabrication of a GaN p/n lateral polarity junction by polar doping selectivity Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 1977-1979. DOI: 10.1002/Pssc.200778624  0.81
2008 Liu F, Collazo R, Mita S, Sitar Z, Pennycook SJ, Duscher G. Direct observation of inversion domain boundaries of GaN on c-sapphire at sub-ångstrom resolution Advanced Materials. 20: 2162-2165. DOI: 10.1002/Adma.200702522  0.69
2008 Liu F, Collazo R, Mita S, Sitar Z, Duscher G. Three-dimensional geometry of nanometer-scale AIN pits: A new template for quantum dots? Advanced Materials. 20: 134-137. DOI: 10.1002/Adma.200701288  0.661
2007 Losego MD, Mita S, Collazo R, Sitar Z, Maria JP. Epitaxial calcium oxide films deposited on gallium nitride surfaces Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 25: 1029-1032. DOI: 10.1116/1.2710243  0.685
2007 Collazo R, Mita S, Rice A, Dalmau RF, Sitar Z. Simultaneous growth of a GaN pn lateral polarity junction by polar selective doping Applied Physics Letters. 91. DOI: 10.1063/1.2816893  0.813
2007 Liu F, Collazo R, Mita S, Sitar Z, Duscher G, Pennycook SJ. The mechanism for polarity inversion of GaN via a thin AlN layer: Direct experimental evidence Applied Physics Letters. 91. DOI: 10.1063/1.2815748  0.732
2007 Craft HS, Collazo R, Losego MD, Mita S, Sitar Z, Maria JP. Band offsets and growth mode of molecular beam epitaxy grown MgO (111) on GaN (0002) by x-ray photoelectron spectroscopy Journal of Applied Physics. 102. DOI: 10.1063/1.2785022  0.694
2007 Dalmau R, Collazo R, Mita S, Sitar Z. X-ray photoelectron spectroscopy characterization of aluminum nitride surface oxides: Thermal and hydrothermal evolution Journal of Electronic Materials. 36: 414-419. DOI: 10.1007/S11664-006-0044-X  0.765
2007 Collazo R, Mita S, Dalmau R, Sitar Z. Impact of polarity control and related defects on the electrical properties of GaN grown by MOVPE Physica Status Solidi (C) Current Topics in Solid State Physics. 4: 2597-2600. DOI: 10.1002/Pssc.200674874  0.815
2007 Mita S, Collazo R, Dalmau R, Sitar Z. Growth of highly resistive Ga-polar GaN by LP-MOVPE Physica Status Solidi (C) Current Topics in Solid State Physics. 4: 2260-2263. DOI: 10.1002/Pssc.200674837  0.817
2006 Aleksov A, Collazo R, Mita S, Schlesser R, Sitar Z. Current-voltage characteristics of n∕n lateral polarity junctions in GaN Applied Physics Letters. 89: 052117. DOI: 10.1063/1.2244046  0.728
2006 Collazo R, Mita S, Aleksov A, Schlesser R, Sitar Z. Growth of Ga- and N- polar gallium nitride layers by metalorganic vapor phase epitaxy on sapphire wafers Journal of Crystal Growth. 287: 586-590. DOI: 10.1016/J.Jcrysgro.2005.10.080  0.738
2006 Mita S, Collazo R, Schlesser R, Sitar Z. Polarity control of LP-MOVPE GaN using N2 as the carrier gas Materials Research Society Symposium Proceedings. 892: 685-690.  0.609
2005 Mita S, Collazo R, Schlesser R, Sitar Z. Polarity control of GaN films grown by metal organic chemical vapor deposition on (0001) sapphire substrates Materials Research Society Symposium Proceedings. 831: 167-172. DOI: 10.1557/Proc-831-E3.20  0.736
2005 Mita S, Collazo R, Schlesser R, Sitar Z. Polarity Control of LP-MOVPE GaN using N 2 the Carrier Gas Mrs Proceedings. 892. DOI: 10.1557/Proc-0892-Ff27-06  0.688
2005 Collazo R, Mita S, Schiesser R, Sitar Z. Polarity control of GaN thin films grown by metalorganic vapor phase epitaxy Physica Status Solidi C: Conferences. 2: 2117-2120. DOI: 10.1002/Pssc.200461546  0.738
Show low-probability matches.