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Christopher A. Schaake, Ph.D.

Affiliations: 
2009 Electrical & Computer Engineering University of California, Santa Barbara, Santa Barbara, CA, United States 
Area:
Electronics & Photonics
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Umesh Mishra grad student 2009 UC Santa Barbara
 (Contributions to the science and technology of enhancing the internal quantum efficiency of nitride light emitting diodes.)

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Schaake CA, Brown DF, Swenson BL, et al. (2013) A donor-like trap at the InGaN/GaN interface with net negative polarization and its possible consequence on internal quantum efficiency Semiconductor Science and Technology. 28
Schaake CA, Fichtenbaum NA, Neufeld CJ, et al. (2008) M-plane InGaN/GaN light emitting diodes fabricated by MOCVD regrowth on c-plane patterned templates Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 2963-2965
Fichtenbaum NA, Neufeld CJ, Schaake C, et al. (2007) Metalorganic chemical vapor deposition regrowth of InGaN and GaN on N-polar pillar and stripe nanostructures Japanese Journal of Applied Physics, Part 2: Letters. 46: L230-L233
Fichtenbaum NA, Schaake C, Mates TE, et al. (2007) Electrical characterization of p -type N-polar and Ga-polar GaN grown by metalorganic chemical vapor deposition Applied Physics Letters. 91
Neufeld CJ, Schaake C, Grundmann M, et al. (2007) InGaN/GaN nanopillar-array light emitting diodes Physica Status Solidi (C) Current Topics in Solid State Physics. 4: 1605-1608
Fichtenbaum NA, Neufeld CJ, Schaake C, et al. (2007) MOCVD regrowth of InGaN on N-polar and Ga-polar pillar and stripe nanostructures Physica Status Solidi (B) Basic Research. 244: 1802-1805
Keller S, Fichtenbaum NA, Schaake C, et al. (2007) Optical properties of GaN nanopillar and nanostripe arrays with embedded InGaN/GaN multi quantum wells Physica Status Solidi (B) Basic Research. 244: 1797-1801
Keller S, Schaake C, Fichtenbaum NA, et al. (2006) Optical and structural properties of GaN nanopillar and nanostripe arrays with embedded InGaN/GaN multi-quantum wells Journal of Applied Physics. 100
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