Matthew A. Laurent

Affiliations: 
2015 University of California, Santa Barbara, Santa Barbara, CA, United States 
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"Matthew Laurent"
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Publications

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Laurent MA, Malakoutian M, Chowdhury S. (2020) A study on the nucleation and MPCVD growth of thin, dense, and contiguous nanocrystalline diamond films on bare and Si 3 N 4 -coated N-polar GaN Semiconductor Science and Technology. 35: 15003
Rajabi S, Mandal S, Ercan B, et al. (2019) A Demonstration of Nitrogen Polar Gallium Nitride Current Aperture Vertical Electron Transistor Ieee Electron Device Letters. 40: 885-888
Mandal S, Kanathila MB, Pynn CD, et al. (2018) Observation and discussion of avalanche electroluminescence in GaN p-n diodes offering a breakdown electric field of 3 MV cm−1 Semiconductor Science and Technology. 33: 065013
Ji D, Laurent MA, Agarwal A, et al. (2017) Normally OFF Trench CAVET With Active Mg-Doped GaN as Current Blocking Layer Ieee Transactions On Electron Devices. 64: 805-808
Mandal S, Agarwal A, Ahmadi E, et al. (2017) Dispersion Free 450-V p GaN-Gated CAVETs With Mg-ion Implanted Blocking Layer Ieee Electron Device Letters. 38: 933-936
Li W, Ji D, Tanaka R, et al. (2017) Demonstration of GaN Static Induction Transistor (SIT) Using Self-Aligned Process Ieee Journal of the Electron Devices Society. 5: 485-490
Bonef B, Laurent M, Keller S, et al. (2017) Atom Probe Tomography Quantification of Alloy Fluctuations in (Al,In,Ga)N Microscopy and Microanalysis. 23: 716-717
Foronda HM, Mazumder B, Young EC, et al. (2017) Analysis of Vegard's law for lattice matching In x Al 1-x N to GaN by metalorganic chemical vapor deposition Journal of Crystal Growth. 475: 127-135
Enatsu Y, Gupta C, Laurent M, et al. (2016) Polarization induced three-dimensional hole gas in compositionally graded In x Ga1− x N layer Applied Physics Express. 9: 75502
Foronda HM, Laurent MA, Yonkee B, et al. (2016) Improving source efficiency for aluminum nitride grown by metal organic chemical vapor deposition Semiconductor Science and Technology. 31: 85003
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