Matthew A. Laurent
Affiliations: | 2015 | University of California, Santa Barbara, Santa Barbara, CA, United States |
Google:
"Matthew Laurent"
BETA: Related publications
See more...
Publications
You can help our author matching system! If you notice any publications incorrectly attributed to this author, please sign in and mark matches as correct or incorrect. |
Laurent MA, Malakoutian M, Chowdhury S. (2020) A study on the nucleation and MPCVD growth of thin, dense, and contiguous nanocrystalline diamond films on bare and Si 3 N 4 -coated N-polar GaN Semiconductor Science and Technology. 35: 15003 |
Rajabi S, Mandal S, Ercan B, et al. (2019) A Demonstration of Nitrogen Polar Gallium Nitride Current Aperture Vertical Electron Transistor Ieee Electron Device Letters. 40: 885-888 |
Mandal S, Kanathila MB, Pynn CD, et al. (2018) Observation and discussion of avalanche electroluminescence in GaN p-n diodes offering a breakdown electric field of 3 MV cm−1 Semiconductor Science and Technology. 33: 065013 |
Ji D, Laurent MA, Agarwal A, et al. (2017) Normally OFF Trench CAVET With Active Mg-Doped GaN as Current Blocking Layer Ieee Transactions On Electron Devices. 64: 805-808 |
Mandal S, Agarwal A, Ahmadi E, et al. (2017) Dispersion Free 450-V p GaN-Gated CAVETs With Mg-ion Implanted Blocking Layer Ieee Electron Device Letters. 38: 933-936 |
Li W, Ji D, Tanaka R, et al. (2017) Demonstration of GaN Static Induction Transistor (SIT) Using Self-Aligned Process Ieee Journal of the Electron Devices Society. 5: 485-490 |
Bonef B, Laurent M, Keller S, et al. (2017) Atom Probe Tomography Quantification of Alloy Fluctuations in (Al,In,Ga)N Microscopy and Microanalysis. 23: 716-717 |
Foronda HM, Mazumder B, Young EC, et al. (2017) Analysis of Vegard's law for lattice matching In x Al 1-x N to GaN by metalorganic chemical vapor deposition Journal of Crystal Growth. 475: 127-135 |
Enatsu Y, Gupta C, Laurent M, et al. (2016) Polarization induced three-dimensional hole gas in compositionally graded In x Ga1− x N layer Applied Physics Express. 9: 75502 |
Foronda HM, Laurent MA, Yonkee B, et al. (2016) Improving source efficiency for aluminum nitride grown by metal organic chemical vapor deposition Semiconductor Science and Technology. 31: 85003 |