Maher Tahhan
Affiliations: | 2017 | University of California, Santa Barbara, Santa Barbara, CA, United States |
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"Maher Tahhan"
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| Chan SH, Bisi D, Tahhan M, et al. (2018) Comparing electrical characteristics of in situ and ex situ Al2O3/GaN interfaces formed by metalorganic chemical vapor deposition Applied Physics Express. 11: 41002 |
| Chan SH, Bisi D, Liu X, et al. (2017) Impact of oxygen precursor flow on the forward bias behavior of MOCVD-Al2O3 dielectrics grown on GaN Journal of Applied Physics. 122: 174101 |
| Agarwal A, Tahhan M, Mates T, et al. (2017) Suppression of Mg propagation into subsequent layers grown by MOCVD Journal of Applied Physics. 121: 25106 |
| Chan SH, Tahhan M, Liu X, et al. (2016) Metalorganic chemical vapor deposition and characterization of (Al,Si)O dielectrics for GaN-based devices Japanese Journal of Applied Physics. 55 |
| Tahhan M, Nedy J, Chan SH, et al. (2016) Optimization of a chlorine-based deep vertical etch of GaN demonstrating low damage and low roughness Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 34 |
| Chan SH, Keller S, Tahhan M, et al. (2016) High electron mobility recovery in AlGaN/GaN 2DEG channels regrown on etched surfaces Semiconductor Science and Technology. 31 |
| Ahmadi E, Wu F, Li H, et al. (2015) N-face GaN/AlN/GaN/InAlN and GaN/AlN/AlGaN/GaN/InAlN high-electron-mobility transistor structures grown by plasma-assisted molecular beam epitaxy on vicinal substrates Semiconductor Science and Technology. 30: 1-8 |
| Liu X, Kim J, Suntrup DJ, et al. (2014) In situ metalorganic chemical vapor deposition of Al2O 3 on N-face GaN and evidence of polarity induced fixed charge Applied Physics Letters. 104 |