Geetak Gupta
Affiliations: | 2015 | University of California, Santa Barbara, Santa Barbara, CA, United States |
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"Geetak Gupta"
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| Kumar R, Kushvaha SS, Kumar M, et al. (2020) Flexible perylenediimide/GaN organic-inorganic hybrid system with exciting optical and interfacial properties. Scientific Reports. 10: 10480 |
| Gupta G, Ahmadi E, Suntrup DJ, et al. (2018) Establishment of design space for high current gain in III-N hot electron transistors Semiconductor Science and Technology. 33: 15018 |
| Tahhan M, Nedy J, Chan SH, et al. (2016) Optimization of a chlorine-based deep vertical etch of GaN demonstrating low damage and low roughness Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 34 |
| Laurent MA, Gupta G, Suntrup DJ, et al. (2016) Barrier height inhomogeneity and its impact on (Al,In,Ga)N Schottky diodes Journal of Applied Physics. 119 |
| Gupta C, Enatsu Y, Gupta G, et al. (2016) High breakdown voltage p-n diodes on GaN on sapphire by MOCVD Physica Status Solidi (a) Applications and Materials Science |
| Soligo R, Chowdhury S, Gupta G, et al. (2015) The Role of the Base Stack on the AC Performance of GaN Hot Electron Transistor Ieee Electron Device Letters. 36: 669-671 |
| Gupta G, Ahmadi E, Hestroffer K, et al. (2015) Common emitter current gain >1 in III-N hot electron transistors with 7-nm GaN/InGaN base Ieee Electron Device Letters. 36: 439-441 |
| Gupta G, Laurent M, Li H, et al. (2015) Design space of III-N hot electron transistors using AlGaN and InGaN polarization-dipole barriers Ieee Electron Device Letters. 36: 23-25 |
| Suntrup DJ, Gupta G, Li H, et al. (2015) Measuring the signature of bias and temperature-dependent barrier heights in III-N materials using a hot electron transistor Semiconductor Science and Technology. 30 |
| Suntrup DJ, Gupta G, Li H, et al. (2015) Barrier height fluctuations in InGaN polarization dipole diodes Applied Physics Letters. 107 |