Fee L. Lie, Ph.D.
Affiliations: | 2011 | Chemical Engineering | University of Arizona, Tucson, AZ |
Area:
Chemical Engineering, Materials Science Engineering, Electronics and Electrical EngineeringGoogle:
"Fee Lie"Parents
Sign in to add mentor| Anthony J. Muscat | grad student | 2011 | University of Arizona | |
| (Interface Formation Between High Dielectric Permittivity Films and III-V Compound Semiconductors using HF Chemistries and Atomic Layer Deposition.) | ||||
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Publications
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| Granados B, Lie F, Muscat A. (2012) Surface chemistry of Al(CH3)3 and TiCl4 on GaAs(100) and InGaAs during the first half-cycle of atomic layer deposition Microscopy and Microanalysis. 18: 906-907 |
| Lie FL, Rachmady W, Muscat AJ. (2011) Oxide removal and selective etching of in from InSb(100) with TiCl |
| Lie FL, Muscat AJ. (2011) Controlled oxide removal and surface morphology on InSb(100) using gas phase HF/H |
| Imangholi B, Lie FL, Parks HG, et al. (2010) Effect of deep-level defects on surface recombination velocity at the interface between silicon and dielectric films Ieee Transactions On Electron Devices. 57: 877-889 |
| Lie FL, Rachmady W, Muscat AJ. (2010) In0.53Ga0.47As(1 0 0) native oxide removal by liquid and gas phase HF/H2O chemistries Microelectronic Engineering. 87: 1656-1660 |
| Deng Z, Lie FL, Shen S, et al. (2009) Water-based route to ligand-selective synthesis of ZnSe and Cd-doped ZnSe quantum dots with tunable ultraviolet A to blue photoluminescence. Langmuir : the Acs Journal of Surfaces and Colloids. 25: 434-42 |
| Lie FL, Rachmady W, Muscat AJ. (2009) A comparison of liquid and gas phase surface preparation of III-V compound semiconductors for atomic layer deposition Microelectronic Engineering. 86: 122-127 |