Chungho Lee, Ph.D.

Affiliations: 
2004 Cornell University, Ithaca, NY, United States 
Area:
Electronics and Electrical Engineering
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"Chungho Lee"

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Edwin C. Kan grad student 2004 Cornell
 (Charge storage in nanocrystals.)
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Publications

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Ganguly U, Lee C, Hou TH, et al. (2007) Enhanced electrostatics for low-voltage operations in nanocrystal based nanotube/nanowire memories Ieee Transactions On Nanotechnology. 6: 22-28
Hou TH, Lee C, Narayanan V, et al. (2006) Design optimization of metal nanocrystal memory - Part II: Gate-stack engineering Ieee Transactions On Electron Devices. 53: 3103-3108
Hou TH, Lee C, Narayanan V, et al. (2006) Design optimization of metal nanocrystal memory - Part I: Nanocrystal array engineering Ieee Transactions On Electron Devices. 53: 3095-3102
Ganguly U, Narayanan V, Lee C, et al. (2006) Three-dimensional analytical modeling of nanocrystal memory electrostatics Journal of Applied Physics. 99
Kim J, Ni W, Lee C, et al. (2006) Magnetic property characterization of magnetite (Fe 3 O 4) nanorod cores for integrated solenoid rf inductors Journal of Applied Physics. 99
Ganguly U, Lee C, Kan EC. (2005) Experimental observation of non-volatile charge injection and molecular redox in fullerenes C 60 and C 70 in an EEPROM-type device Materials Research Society Symposium Proceedings. 830: 355-361
Lee C, Ganguly U, Kan EC. (2005) Characterization of number fluctuations in gate-last metal nanocrystal nonvolatile memory array beyond 90nm CMOS technology Materials Research Society Symposium Proceedings. 830: 223-228
Lee C, Hou T, Kan EC-. (2005) Nonvolatile memory with a metal nanocrystal/nitride heterogeneous floating-gate Ieee Transactions On Electron Devices. 52: 2697-2702
Kim M, Shen NY-, Lee C, et al. (2005) Fast and sensitive electret polymer characterization by extended floating gate MOSFET Ieee Transactions On Dielectrics and Electrical Insulation. 12: 1082-1087
Lee C, Ganguly U, Narayanan V, et al. (2005) Asymmetric electric field enhancement in nanocrystal memories Ieee Electron Device Letters. 26: 879-881
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