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Connie H. Li, Ph.D.

Affiliations: 
2002 University of California, Los Angeles, Los Angeles, CA 
Area:
Chemical Engineering
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"Connie Li"
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Robert F. Hicks grad student 2002 UCLA
 (Surface structures formed on compound semiconductor films deposited by metalorganic vapor -phase epitaxy.)

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Publications

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Dong X, Yan C, Tomer D, et al. (2016) Spiral growth of few-layer MoS2 by chemical vapor deposition Applied Physics Letters. 109
Tomer D, Rajput S, Hudy LJ, et al. (2015) Inhomogeneity in barrier height at graphene/Si (GaAs) Schottky junctions. Nanotechnology. 26: 215702
Goswami R, Li CH, Jernigan GG, et al. (2014) Solid phase epitaxial growth of 3C-SiC thin film on Si and annihilation of nanopores Acta Materialia. 65: 418-424
Li CH, Kioseoglou G, Hanbicki AT, et al. (2007) Electrical spin injection into the InAs∕GaAs wetting layer Applied Physics Letters. 91: 262504
Zega TJ, Hanbicki AT, Erwin SC, et al. (2006) Determination of interface atomic structure and its impact on spin transport using Z-contrast microscopy and density-functional theory. Physical Review Letters. 96: 196101
Li CH, Sun Y, Law DC, et al. (2003) Reconstructions of the InP(111)A surface Physical Review B. 68: 85320
Raghavachari K, Fu Q, Chen G, et al. (2002) Hydrogen adsorption on the indium-rich indium phosphide (001) surface: a novel way to produce bridging In-H-In bonds. Journal of the American Chemical Society. 124: 15119-24
Law DC, Sun Y, Li CH, et al. (2002) Structure of arsenic-treated indium phosphide (001) surfaces during metalorganic vapor-phase epitaxy Physical Review B. 66
Law DC, Sun Y, Li CH, et al. (2002) Structure of arsenic-treated indium phosphide (001) surfaces during metalorganic vapor-phase epitaxy Physical Review B - Condensed Matter and Materials Physics. 66: 453141-453147
Li CH, Li L, Law DC, et al. (2002) Arsenic adsorption and exchange with phosphorus on indium phosphide (001) Physical Review B. 65
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