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Connie H. Li, Ph.D. - Publications

Affiliations: 
2002 University of California, Los Angeles, Los Angeles, CA 
Area:
Chemical Engineering
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22 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2016 Dong X, Yan C, Tomer D, Li CH, Li L. Spiral growth of few-layer MoS2 by chemical vapor deposition Applied Physics Letters. 109. DOI: 10.1063/1.4960583  0.301
2015 Tomer D, Rajput S, Hudy LJ, Li CH, Li L. Inhomogeneity in barrier height at graphene/Si (GaAs) Schottky junctions. Nanotechnology. 26: 215702. PMID 25930976 DOI: 10.1088/0957-4484/26/21/215702  0.307
2014 Goswami R, Li CH, Jernigan GG, Thompson PE, Hellberg CS, Jonker BT. Solid phase epitaxial growth of 3C-SiC thin film on Si and annihilation of nanopores Acta Materialia. 65: 418-424. DOI: 10.1016/J.Actamat.2013.11.011  0.324
2007 Li CH, Kioseoglou G, Hanbicki AT, Goswami R, Hellberg CS, Jonker BT, Yasar M, Petrou A. Electrical spin injection into the InAs∕GaAs wetting layer Applied Physics Letters. 91: 262504. DOI: 10.1063/1.2827585  0.301
2006 Zega TJ, Hanbicki AT, Erwin SC, Zutić I, Kioseoglou G, Li CH, Jonker BT, Stroud RM. Determination of interface atomic structure and its impact on spin transport using Z-contrast microscopy and density-functional theory. Physical Review Letters. 96: 196101. PMID 16803113 DOI: 10.1103/Physrevlett.96.196101  0.31
2003 Li CH, Sun Y, Law DC, Visbeck SB, Hicks RF. Reconstructions of the InP(111)A surface Physical Review B. 68: 85320. DOI: 10.1103/Physrevb.68.085320  0.406
2002 Raghavachari K, Fu Q, Chen G, Li L, Li CH, Law DC, Hicks RF. Hydrogen adsorption on the indium-rich indium phosphide (001) surface: a novel way to produce bridging In-H-In bonds. Journal of the American Chemical Society. 124: 15119-24. PMID 12475358 DOI: 10.1021/ja020348p  0.738
2002 Law DC, Sun Y, Li CH, Visbeck SB, Chen G, Hicks RF. Structure of arsenic-treated indium phosphide (001) surfaces during metalorganic vapor-phase epitaxy Physical Review B. 66. DOI: 10.1103/PhysRevB.66.045314  0.697
2002 Law DC, Sun Y, Li CH, Visbeck SB, Chen G, Hicks RF. Structure of arsenic-treated indium phosphide (001) surfaces during metalorganic vapor-phase epitaxy Physical Review B - Condensed Matter and Materials Physics. 66: 453141-453147. DOI: 10.1103/Physrevb.66.045314  0.708
2002 Li CH, Li L, Law DC, Visbeck SB, Hicks RF. Arsenic adsorption and exchange with phosphorus on indium phosphide (001) Physical Review B. 65. DOI: 10.1103/PhysRevB.65.205322  0.663
2002 Li CH, Li L, Law DC, Visbeck SB, Hicks RF. Arsenic adsorption and exchange with phosphorus on indium phosphide (001) Physical Review B - Condensed Matter and Materials Physics. 65: 2053221-2053227. DOI: 10.1103/Physrevb.65.205322  0.731
2002 Fu Q, Negro E, Chen G, Law DC, Li CH, Hicks RF, Raghavachari K. Hydrogen adsorption on phosphorus-rich(2×1)indium phosphide (001) Physical Review B. 65. DOI: 10.1103/Physrevb.65.075318  0.68
2002 Li CH, Sun Y, Visbeck SB, Law DC, Hicks RF. Reflectance difference spectroscopy of an ultrathin indium arsenide layer on indium phosphide (001) Applied Physics Letters. 81: 3939-3941. DOI: 10.1063/1.1523650  0.717
2001 Begarney MJ, Li CH, Law DC, Visbeck SB, Sun Y, Hicks RF. Reflectance difference spectroscopy of mixed phases of indium phosphide (001) Applied Physics Letters. 78: 55-57. DOI: 10.1063/1.1337620  0.748
2001 Fu Q, Begarney MJ, Li CH, Law DC, Hicks RF. Phase transitions of III-V compound semiconductor surfaces in the MOVPE environment Journal of Crystal Growth. 225: 405-409. DOI: 10.1016/S0022-0248(01)00896-X  0.759
2000 Begarney MJ, Li L, Li CH, Law DC, Fu Q, Hicks RF. Reflectance-difference spectroscopy of mixed arsenic-rich phases of gallium arsenide (001) Physical Review B - Condensed Matter and Materials Physics. 62: 8092-8097. DOI: 10.1103/Physrevb.62.8092  0.732
2000 Li L, Fu Q, Li CH, Han B, Hicks RF. Determination of InP(001) surface reconstructions by STM and infrared spectroscopy of adsorbed hydrogen Physical Review B. 61: 10223-10228. DOI: 10.1103/PhysRevB.61.10223  0.531
2000 Li L, Fu Q, Li CH, Han BK, Hicks RF. Determination of InP(001) surface reconstructions by STM and infrared spectroscopy of adsorbed hydrogen Physical Review B - Condensed Matter and Materials Physics. 61: 10223-10228. DOI: 10.1103/Physrevb.61.10223  0.582
2000 Li CH, Li L, Fu Q, Begarney MJ, Hicks RF. Stress-induced anisotropy of phosphorous islands on gallium arsenide Applied Physics Letters. 77: 2139-2141. DOI: 10.1063/1.1314290  0.419
2000 Li CH, Li L, Fu Q, Begarney MJ, Hicks RF. Stress-induced anisotropy of phosphorous islands on gallium arsenide Applied Physics Letters. 77: 2139-2141. DOI: 10.1063/1.1314290  0.735
2000 Fu Q, Li L, Li CH, Begarney MJ, Law DC, Hicks RF. Mechanism of Arsine Adsorption on the Gallium-Rich GaAs(001)−(4 × 2) Surface The Journal of Physical Chemistry B. 104: 5595-5602. DOI: 10.1021/jp0005827  0.698
2000 Fu Q, Li L, Li CH, Begarney MJ, Law DC, Hicks RF. Mechanism of arsine adsorption on the gallium-rich GaAs(001)-(4 × 2) surface Journal of Physical Chemistry B. 104: 5595-5602. DOI: 10.1021/Jp0005827  0.754
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