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Michael J. Begarney, Ph.D. - Publications

Affiliations: 
2000 University of California, Los Angeles, Los Angeles, CA 
Area:
Chemical Engineering, Materials Science Engineering
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10 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2001 Begarney MJ, Li CH, Law DC, Visbeck SB, Sun Y, Hicks RF. Reflectance difference spectroscopy of mixed phases of indium phosphide (001) Applied Physics Letters. 78: 55-57. DOI: 10.1063/1.1337620  0.68
2001 Fu Q, Begarney MJ, Li CH, Law DC, Hicks RF. Phase transitions of III-V compound semiconductor surfaces in the MOVPE environment Journal of Crystal Growth. 225: 405-409. DOI: 10.1016/S0022-0248(01)00896-X  0.694
2000 Begarney MJ, Li L, Li CH, Law DC, Fu Q, Hicks RF. Reflectance-difference spectroscopy of mixed arsenic-rich phases of gallium arsenide (001) Physical Review B - Condensed Matter and Materials Physics. 62: 8092-8097. DOI: 10.1103/Physrevb.62.8092  0.662
2000 Law DC, Li L, Begarney MJ, Hicks RF. Analysis of the growth modes for gallium arsenide metalorganic vapor-phase epitaxy Journal of Applied Physics. 88: 508-512. DOI: 10.1063/1.373687  0.669
2000 Li CH, Li L, Fu Q, Begarney MJ, Hicks RF. Stress-induced anisotropy of phosphorous islands on gallium arsenide Applied Physics Letters. 77: 2139-2141. DOI: 10.1063/1.1314290  0.575
2000 Fu Q, Li L, Li CH, Begarney MJ, Law DC, Hicks RF. Mechanism of arsine adsorption on the gallium-rich GaAs(001)-(4 × 2) surface Journal of Physical Chemistry B. 104: 5595-5602. DOI: 10.1021/Jp0005827  0.676
1999 Begarney MJ, Li L, Han BK, Law DC, Li CH, Yoon H, Goorsky MS, Hicks RF. Formation of etch pits during carbon doping of gallium arsenide with carbon tetrachloride by metalorganic vapor-phase epitaxy Journal of Applied Physics. 86: 318-324. DOI: 10.1063/1.370731  0.65
1999 Gan S, Li L, Begarney MJ, Law D, Han BK, Hicks RF. Step structure of arsenic-terminated vicinal Ge (100) Journal of Applied Physics. 85: 2004-2006. DOI: 10.1063/1.369176  0.531
1999 Fu Q, Li L, Begarney MJ, Man BK, Law DC, Hicks RF. Site-specific chemistry of gallium arsenide metalorganic chemical vapor deposition Journal De Physique. Iv : Jp. 9: Pr8-3-Pr8-14. DOI: 10.1051/Jp4:1999801  0.663
1998 Begarney MJ, Warddrip ML, Kappers MJ, Hicks RF. Kinetics of carbon tetrachloride decomposition during the metalorganic vapor-phase epitaxy of gallium arsenide and indium arsenide Journal of Crystal Growth. 193: 305-315. DOI: 10.1016/S0022-0248(98)00548-X  0.582
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