| Year |
Citation |
Score |
| 2018 |
Joyce M, Pal L, Hicks R, Agate S, Williams TS, Ray G, Fleming PD. Custom tailoring of conductive ink/substrate properties for increased thin film deposition of poly(dimethylsiloxane) films Journal of Materials Science: Materials in Electronics. 29: 10461-10470. DOI: 10.1007/S10854-018-9108-Y |
0.397 |
|
| 2017 |
Celik FE, Peters B, Coppens M, McCormick A, Hicks RF, Ekerdt J. A Career in Catalysis: Alexis T. Bell Acs Catalysis. 7: 8628-8640. DOI: 10.1021/Acscatal.7B03218 |
0.75 |
|
| 2015 |
Williams TS, Woo R, Hicks RF, Yu H, Grigoriev M, Cheng D. Atmospheric pressure plasma as a surface preparation method for bonding dissimilar materials Camx 2015 - Composites and Advanced Materials Expo. 425-438. |
0.326 |
|
| 2014 |
Williams TS, Yu H, Hicks RF. Atmospheric pressure plasma activation as a surface pre-treatment for the adhesive bonding of aluminum 2024 Journal of Adhesion Science and Technology. 28: 653-674. DOI: 10.1080/01694243.2013.859646 |
0.455 |
|
| 2013 |
Palmieri FL, Watson KA, Morales G, Williams T, Hicks R, Wohl CJ, Hopkins JW, Connell JW. Laser ablative surface treatment for enhanced bonding of Ti-6Al-4V alloy. Acs Applied Materials & Interfaces. 5: 1254-61. PMID 23317556 DOI: 10.1021/Am302293M |
0.323 |
|
| 2013 |
Yu H, Cheng D, Williams TS, Severino J, De Rosa IM, Carlson L, Hicks RF. Rapid oxidative activation of carbon nanotube yarn and sheet by a radio frequency, atmospheric pressure, helium and oxygen plasma Carbon. 57: 11-21. DOI: 10.1016/J.Carbon.2013.01.010 |
0.462 |
|
| 2013 |
Williams TS, Hang Y, Hicks RF. Effects of atmospheric pressure plasma activation on adhesive bonding of aluminum 2024 International Sampe Technical Conference. 540-553. |
0.342 |
|
| 2012 |
Williams TS, Yu H, Yeh PC, Yang JM, Hicks RF. Atmospheric pressure plasma effects on the adhesive bonding properties of stainless steel and epoxy composites International Sampe Technical Conference. DOI: 10.1177/0021998312470150 |
0.44 |
|
| 2012 |
Kong MG, Ganguly BN, Hicks RF. Plasma jets and plasma bullets Plasma Sources Science and Technology. 21. DOI: 10.1088/0963-0252/21/3/030201 |
0.387 |
|
| 2012 |
Williams TS, Yu H, Hicks RF. Review of atmospheric pressure plasma effect on the activation of plastics for improved adhesion Annual Technical Conference - Antec, Conference Proceedings. 3: 1721-1726. |
0.31 |
|
| 2011 |
Williams TS, Hicks RF. Aging mechanism of the native oxide on silicon (100) following atmospheric oxygen plasma cleaning Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 29. DOI: 10.1116/1.3597436 |
0.429 |
|
| 2011 |
Ngo C, Zhou H, Mecklenburg M, Pozuelo M, Regan BC, Xiao QF, Shenoy VB, Hicks RF, Kodambaka S. Effect of precursor flux on compositional evolution in InP 1-xSbx nanowires grown via self-catalyzed vaporliquidsolid process Journal of Crystal Growth. 336: 14-19. DOI: 10.1016/J.Jcrysgro.2011.09.043 |
0.343 |
|
| 2011 |
Pozuelo M, Zhou H, Lin S, Lipman SA, Goorsky MS, Hicks RF, Kodambaka S. Self-catalyzed growth of InP/InSb axial nanowire heterostructures Journal of Crystal Growth. 329: 6-11. DOI: 10.1016/J.Jcrysgro.2011.06.034 |
0.307 |
|
| 2011 |
Zhou H, Pozuelo M, Hicks RF, Kodambaka S. Self-catalyzed vaporliquidsolid growth of InP1-xSbx nanostructures Journal of Crystal Growth. 319: 25-30. DOI: 10.1016/J.Jcrysgro.2011.01.036 |
0.34 |
|
| 2011 |
Evoen V, Zhou H, Gao L, Pozuelo M, Liang B, Tatebeyashi J, Kodambaka S, Huffaker DL, Hicks RF. Self-catalyzed vaporliquidsolid growth of InP/InAsP coreshell nanopillars Journal of Crystal Growth. 314: 34-38. DOI: 10.1016/J.Jcrysgro.2010.11.092 |
0.325 |
|
| 2011 |
Harris EW, Massey JT, Cheng D, Williams T, Hicks RF. Atmospheric plasma effects on structural adhesive bonding International Sampe Technical Conference. |
0.361 |
|
| 2010 |
Gonzalez E, Hicks RF. Surface analysis of polymers treated by remote atmospheric pressure plasma. Langmuir : the Acs Journal of Surfaces and Colloids. 26: 3710-9. PMID 19950952 DOI: 10.1021/La9032018 |
0.782 |
|
| 2010 |
Habib SB, Gonzalez E, Hicks RF. Atmospheric oxygen plasma activation of silicon (100) surfaces Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 28: 476-485. DOI: 10.1116/1.3374738 |
0.793 |
|
| 2010 |
Barankin MD, Williams TS, Gonzalez E, Hicks RF. Properties of fluorinated silica glass deposited at low temperature by atmospheric plasma-enhanced chemical vapor deposition Thin Solid Films. 519: 1307-1313. DOI: 10.1016/J.Tsf.2010.09.030 |
0.827 |
|
| 2010 |
Pozuelo M, Prikhodko S, Grantab R, Zhou H, Gao L, Sitzman S, Gambin V, Shenoy V, Hicks R, Kodambaka S. Zincblende to wurtzite transition during the self-catalyzed growth of InP nanostructures Journal of Crystal Growth. 312: 2305-2309. DOI: 10.1016/J.Jcrysgro.2010.05.019 |
0.339 |
|
| 2010 |
Gonzalez E, Barankin MD, Guschl PC, Hicks RF. Surface activation of poly(methyl methacrylate) via remote atmospheric pressure plasma Plasma Processes and Polymers. 7: 482-493. DOI: 10.1002/Ppap.200900113 |
0.816 |
|
| 2009 |
Woo RL, Gao L, Goel N, Hudait MK, Wang KL, Kodambaka S, Hicks RF. Kinetic control of self-catalyzed indium phosphide nanowires, nanocones, and nanopillars. Nano Letters. 9: 2207-11. PMID 19419156 DOI: 10.1021/Nl803584U |
0.748 |
|
| 2009 |
Gao L, Woo RL, Liang B, Pozuelo M, Prikhodko S, Jackson M, Goel N, Hudait MK, Huffaker DL, Goorsky MS, Kodambaka S, Hicks RF. Self-catalyzed epitaxial growth of vertical indium phosphide nanowires on silicon. Nano Letters. 9: 2223-8. PMID 19413340 DOI: 10.1021/Nl803567V |
0.757 |
|
| 2009 |
Barankin MD, Gonzalez E, Habib SB, Gao L, Guschl PC, Hicks RF. Hydrophobic films by atmospheric plasma curing of spun-on liquid precursors. Langmuir : the Acs Journal of Surfaces and Colloids. 25: 2495-500. PMID 19161265 DOI: 10.1021/La803791J |
0.825 |
|
| 2009 |
Gonzalez E, Barankin MD, Guschl PC, Hicks RF. Ring opening of aromatic polymers by remote atmospheric-pressure plasma Ieee Transactions On Plasma Science. 37: 823-831. DOI: 10.1109/Tps.2009.2014769 |
0.814 |
|
| 2009 |
Ladwig AM, Koch RD, Wenski EG, Hicks RF. Atmospheric plasma deposition of diamond-like carbon coatings Diamond and Related Materials. 18: 1129-1133. DOI: 10.1016/J.Diamond.2009.02.026 |
0.418 |
|
| 2008 |
Woo RL, Xiao R, Kobayashi Y, Gao L, Goel N, Hudait MK, Mallouk TE, Hicks RF. Effect of twinning on the photoluminescence and photoelectrochemical properties of indium phosphide nanowires grown on silicon (111). Nano Letters. 8: 4664-9. PMID 19367937 DOI: 10.1021/Nl802433U |
0.731 |
|
| 2008 |
Gonzalez E, Barankin MD, Guschl PC, Hicks RF. Remote atmospheric-pressure plasma activation of the surfaces of polyethylene terephthalate and polyethylene naphthalate. Langmuir : the Acs Journal of Surfaces and Colloids. 24: 12636-43. PMID 18834154 DOI: 10.1021/La802296C |
0.811 |
|
| 2008 |
Woo RL, Malouf G, Cheng SF, Woo RN, Goorsky M, Hicks RF. Red shift in the photoluminescence of indium gallium arsenide nitride induced by annealing in nitrogen trifluoride Journal of Crystal Growth. 310: 579-583. DOI: 10.1016/J.Jcrysgro.2007.11.087 |
0.763 |
|
| 2008 |
Cheng SF, Gao L, Woo RL, Pangan A, Malouf G, Goorsky MS, Wang KL, Hicks RF. Selective area metalorganic vapor-phase epitaxy of gallium arsenide on silicon Journal of Crystal Growth. 310: 562-569. DOI: 10.1016/J.Jcrysgro.2007.11.056 |
0.768 |
|
| 2007 |
Lewis GT, Nowling GR, Hicks RF, Cohen Y. Inorganic surface nanostructuring by atmospheric pressure plasma-induced graft polymerization. Langmuir : the Acs Journal of Surfaces and Colloids. 23: 10756-64. PMID 17824715 DOI: 10.1021/La700577P |
0.793 |
|
| 2007 |
Das U, Raghavachari K, Woo RL, Hicks RF. Phosphine adsorption on the In-rich InP(001) surface: evidence of surface dative bonds at room temperature. Langmuir : the Acs Journal of Surfaces and Colloids. 23: 10109-15. PMID 17764199 DOI: 10.1021/La700790H |
0.752 |
|
| 2007 |
Ladwig A, Babayan S, Smith M, Hester M, Highland W, Koch R, Hicks R. Atmospheric plasma deposition of glass coatings on aluminum Surface and Coatings Technology. 201: 6460-6464. DOI: 10.1016/J.Surfcoat.2006.12.018 |
0.774 |
|
| 2007 |
Barankin MD, Gonzalez E, Ladwig AM, Hicks RF. Plasma-enhanced chemical vapor deposition of zinc oxide at atmospheric pressure and low temperature Solar Energy Materials and Solar Cells. 91: 924-930. DOI: 10.1016/J.Solmat.2007.02.009 |
0.819 |
|
| 2007 |
Cheng SF, Woo RL, Noori AM, Malouf G, Goorsky MS, Hicks RF. Metalorganic chemical vapor deposition of InGaAsN using dilute nitrogen trifluoride Journal of Crystal Growth. 299: 277-281. DOI: 10.1016/J.Jcrysgro.2006.11.207 |
0.771 |
|
| 2006 |
Woo RL, Li L, Hicks RF. Spectroscopic studies of compound semiconductor surfaces as it relates to the growth of nanomaterials Proceedings of Spie - the International Society For Optical Engineering. 6325. DOI: 10.1117/12.682223 |
0.779 |
|
| 2006 |
Moravej M, Yang X, Barankin M, Penelon J, Babayan SE, Hicks RF. Properties of an atmospheric pressure radio-frequency argon and nitrogen plasma Plasma Sources Science and Technology. 15: 204-210. DOI: 10.1088/0963-0252/15/2/005 |
0.812 |
|
| 2006 |
Moravej M, Yang X, Hicks RF, Penelon J, Babayan SE. A radio-frequency nonequilibrium atmospheric pressure plasma operating with argon and oxygen Journal of Applied Physics. 99. DOI: 10.1063/1.2193647 |
0.825 |
|
| 2006 |
Woo RL, Das U, Cheng SF, Chen G, Raghavachari K, Hicks RF. Phosphine and tertiarybutylphosphine adsorption on the indium-rich InP (0 0 1)-(2 × 4) surface Surface Science. 600: 4888-4895. DOI: 10.1016/J.Susc.2006.08.014 |
0.772 |
|
| 2006 |
Cheng SF, Sun Y, Law DC, Visbeck SB, Hicks RF. Structure of ordered and disordered InxGa1-xP(0 0 1) surfaces prepared by metalorganic vapor phase epitaxy Surface Science. 600: 2924-2927. DOI: 10.1016/J.Susc.2006.05.038 |
0.68 |
|
| 2005 |
Yang X, Moravej M, Nowling GR, Chang JP, Hicks RF. Operating modes of an atmospheric pressure radio frequency plasma Ieee Transactions On Plasma Science. 33: 294-295. DOI: 10.1109/Tps.2005.845057 |
0.804 |
|
| 2005 |
Nowling GR, Yajima M, Babayan SE, Moravej M, Yang X, Hoffman W, Hicks RF. Chamberless plasma deposition of glass coatings on plastic Plasma Sources Science and Technology. 14: 477-484. DOI: 10.1088/0963-0252/14/3/009 |
0.796 |
|
| 2005 |
Yang X, Moravej M, Babayan SE, Nowling GR, Hicks RF. High stability of atmospheric pressure plasmas containing carbon tetrafluoride and sulfur hexafluoride Plasma Sources Science and Technology. 14: 412-418. DOI: 10.1088/0963-0252/14/3/002 |
0.809 |
|
| 2005 |
Yang X, Moravej M, Nowling GR, Babayan SE, Panelon J, Chang JP, Hicks RF. Comparison of an atmospheric pressure, radio-frequency discharge operating in the α and γ modes Plasma Sources Science and Technology. 14: 314-320. DOI: 10.1088/0963-0252/14/2/013 |
0.799 |
|
| 2005 |
Hayashi S, Sandhu R, Wojtowicz M, Sun Y, Hicks R, Goorsky MS. Determination of wafer bonding mechanisms for plasma activated SiN films with x-ray reflectivity Journal of Physics D: Applied Physics. 38: A174-A178. DOI: 10.1088/0022-3727/38/10A/033 |
0.313 |
|
| 2005 |
Sun Y, Cheng SF, Chen G, Woo RL, Hicks RF. The structure of indium phosphide (001) treated with trimethylantimony in a metalorganic vapor-phase epitaxy reactor Journal of Applied Physics. 97. DOI: 10.1063/1.1897485 |
0.769 |
|
| 2005 |
Moravej M, Hicks RF. Atmospheric plasma deposition of coatings using a capacitive discharge source Chemical Vapor Deposition. 11: 469-476. DOI: 10.1002/Cvde.200400022 |
0.78 |
|
| 2004 |
Nowling GR, Babayan SE, Yang X, Moravej M, Agarwal R, Hicks RF. The reactions of silane in the afterglow of a helium-nitrogen plasma Plasma Sources Science and Technology. 13: 156-163. DOI: 10.1088/0963-0252/13/1/020 |
0.816 |
|
| 2004 |
Moravej M, Babayan SE, Nowling GR, Yang X, Hicks RF. Plasma enhanced chemical vapour deposition of hydrogenated amorphous silicon at atmospheric pressure Plasma Sources Science and Technology. 13: 8-14. DOI: 10.1088/0963-0252/13/1/002 |
0.816 |
|
| 2004 |
Moravej M, Yang X, Nowling GR, Chang JP, Hicks RF, Babayan SE. Physics of high-pressure helium and argon radio-frequency plasmas Journal of Applied Physics. 96: 7011-7017. DOI: 10.1063/1.1815047 |
0.81 |
|
| 2004 |
Yang X, Moravej M, Babayan SE, Nowling GR, Hicks RF. Etching of uranium oxide with a non-thermal, atmospheric pressure plasma Journal of Nuclear Materials. 324: 134-139. DOI: 10.1016/J.Jnucmat.2003.09.012 |
0.818 |
|
| 2004 |
Chen G, Cheng D, Hicks RF, Noori AM, Hayashi SL, Goorsky MS, Kanjolia R, Odedra R. Metalorganic vapor-phase epitaxy of III/V phosphides with tertiarybutylphosphine and tertiarybutylarsine Journal of Crystal Growth. 270: 322-328. DOI: 10.1016/J.Jcrysgro.2004.06.048 |
0.612 |
|
| 2004 |
Hicks RF, Babayan SE. Transferring University technology into commercial practice Aiche Annual Meeting, Conference Proceedings. 8023. |
0.669 |
|
| 2003 |
Hicks RF, Yang X, Mooravej M, Nowling G, Babayan S. Low temperature, atmospheric pressure plasma processing of materials Digest of Papers - Microprocesses and Nanotechnology 2003 - 2003 International Microprocesses and Nanotechnology Conference, Mnc 2003. 40. DOI: 10.1109/IMNC.2003.1268508 |
0.797 |
|
| 2003 |
Chen G, Cheng SF, Tobin DJ, Li L, Raghavachari K, Hicks RF. Indium phosphide (001)-(2×1): Direct evidence for a hydrogen-stabilized surface reconstruction Physical Review B. 68. DOI: 10.1103/Physrevb.68.121303 |
0.379 |
|
| 2003 |
Yang X, Babayan SE, Hicks RF. Measurement of the fluorine atom concentration in a carbon tetrafluoride and helium atmospheric-pressure plasma Plasma Sources Science and Technology. 12: 484-488. DOI: 10.1088/0963-0252/12/3/325 |
0.835 |
|
| 2003 |
Law DC, Sun Y, Hicks RF. Reflectance difference spectroscopy of gallium phosphide(001) surfaces Journal of Applied Physics. 94: 6175-6180. DOI: 10.1063/1.1615699 |
0.657 |
|
| 2003 |
Sun Y, Law DC, Hicks RF. Kinetics of phosphine adsorption and phosphorus desorption from gallium and indium phosphide ( 0 0 1 ) Surface Science. 540: 12-22. DOI: 10.1016/S0039-6028(03)00834-3 |
0.663 |
|
| 2003 |
Li CH, Sun Y, Law DC, Visbeck SB, Hicks RF. Reconstructions of the InP(111)A surface Physical Review B - Condensed Matter and Materials Physics. 68: 853201-853205. |
0.576 |
|
| 2003 |
Sun Y, Law DC, Li CH, Visbeck SB, Chen G, Hicks RF. Atomically resolved investigation of InGaAs/InP heterojunction formation during metalorganic vapor-phase epitaxy Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 36-39. |
0.623 |
|
| 2002 |
Raghavachari K, Fu Q, Chen G, Li L, Li CH, Law DC, Hicks RF. Hydrogen adsorption on the indium-rich indium phosphide (001) surface: a novel way to produce bridging In-H-In bonds. Journal of the American Chemical Society. 124: 15119-24. PMID 12475358 DOI: 10.1021/ja020348p |
0.747 |
|
| 2002 |
Law DC, Sun Y, Li CH, Visbeck SB, Chen G, Hicks RF. Structure of arsenic-treated indium phosphide (001) surfaces during metalorganic vapor-phase epitaxy Physical Review B - Condensed Matter and Materials Physics. 66: 453141-453147. DOI: 10.1103/Physrevb.66.045314 |
0.738 |
|
| 2002 |
Law DC, Sun Y, Li CH, Visbeck SB, Chen G, Hicks RF. Structure of arsenic-treated indium phosphide (001) surfaces during metalorganic vapor-phase epitaxy Physical Review B. 66. DOI: 10.1103/PhysRevB.66.045314 |
0.688 |
|
| 2002 |
Li CH, Li L, Law DC, Visbeck SB, Hicks RF. Arsenic adsorption and exchange with phosphorus on indium phosphide (001) Physical Review B - Condensed Matter and Materials Physics. 65: 2053221-2053227. DOI: 10.1103/Physrevb.65.205322 |
0.734 |
|
| 2002 |
Li CH, Li L, Law DC, Visbeck SB, Hicks RF. Arsenic adsorption and exchange with phosphorus on indium phosphide (001) Physical Review B. 65. DOI: 10.1103/PhysRevB.65.205322 |
0.637 |
|
| 2002 |
Fu Q, Negro E, Chen G, Law DC, Li CH, Hicks RF, Raghavachari K. Hydrogen adsorption on phosphorus-rich(2×1)indium phosphide (001) Physical Review B. 65. DOI: 10.1103/Physrevb.65.075318 |
0.7 |
|
| 2002 |
Nowling GR, Babayan SE, Jankovic V, Hicks RF. Remote plasma-enhanced chemical vapour deposition of silicon nitride at atmospheric pressure Plasma Sources Science and Technology. 11: 97-103. DOI: 10.1088/0963-0252/11/1/312 |
0.835 |
|
| 2002 |
Li CH, Sun Y, Visbeck SB, Law DC, Hicks RF. Reflectance difference spectroscopy of an ultrathin indium arsenide layer on indium phosphide (001) Applied Physics Letters. 81: 3939-3941. DOI: 10.1063/1.1523650 |
0.697 |
|
| 2002 |
Chen G, Visbeck SB, Law DC, Hicks RF. Structure-sensitive oxidation of the indium phosphide (001) surface Journal of Applied Physics. 91: 9362-9367. DOI: 10.1063/1.1471577 |
0.654 |
|
| 2002 |
Babayan SE, Ding G, Nowling GR, Yang X, Hicks RF. Characterization of the Active Species in the Afterglow of a Nitrogen and Helium Atmospheric-pressure Plasma Plasma Chemistry and Plasma Processing. 22: 255-269. DOI: 10.1023/A:1014847526292 |
0.815 |
|
| 2002 |
Sun Y, Law DC, Visbeck SB, Hicks RF. Kinetics of tertiarybutylphosphine adsorption and phosphorus desorption from indium phosphide (0 0 1) Surface Science. 513: 256-262. DOI: 10.1016/S0039-6028(02)01819-8 |
0.647 |
|
| 2002 |
Law DC, Fu Q, Visbeck SB, Sun Y, Li CH, Hicks RF. Hydrogen atoms as a probe of the optical anisotropy of indium phosphide (0 0 1) Surface Science. 496: 121-128. DOI: 10.1016/S0039-6028(01)01601-6 |
0.665 |
|
| 2002 |
Fu O, Negro E, Chen G, Law DC, Li CH, Hicks RF, Raghavachari K. Hydrogen adsorption on phosphorus-rich (2×1) indium phosphide (001) Physical Review B - Condensed Matter and Materials Physics. 65: 0753181-0753186. |
0.598 |
|
| 2001 |
Babayan SE, Jeong JY, Schütze A, Tu V J, Moravej M, Selwyn GS, Hicks RF. Deposition of silicon dioxide films with a non-equilibrium atmospheric-pressure plasma jet Plasma Sources Science and Technology. 10: 573-578. DOI: 10.1088/0963-0252/10/4/305 |
0.827 |
|
| 2001 |
Begarney MJ, Li CH, Law DC, Visbeck SB, Sun Y, Hicks RF. Reflectance difference spectroscopy of mixed phases of indium phosphide (001) Applied Physics Letters. 78: 55-57. DOI: 10.1063/1.1337620 |
0.79 |
|
| 2001 |
Park J, Henins I, Herrmann HW, Selwyn GS, Hicks RF. Discharge phenomena of an atmospheric pressure radio-frequency capacitive plasma source Journal of Applied Physics. 89: 20-28. DOI: 10.1063/1.1323753 |
0.419 |
|
| 2001 |
Hicks RF, Fu Q, Li L, Visbeck SB, Sun Y, Li CH, Law DC. The role of atomic surface structure in the metalorganic chemical vapor deposition of III-V compound semiconductors Journal De Physique. Iv : Jp. 11: Pr331-Pr337. DOI: 10.1051/Jp4:2001304 |
0.69 |
|
| 2001 |
Babayan SE, Ding G, Hicks RF. Determination of the nitrogen atom density in the afterglow of a nitrogen and helium, nonequilibrium, atmospheric pressure plasma Plasma Chemistry and Plasma Processing. 21: 505-521. DOI: 10.1023/A:1012094817122 |
0.781 |
|
| 2001 |
Fu Q, Begarney MJ, Li CH, Law DC, Hicks RF. Phase transitions of III-V compound semiconductor surfaces in the MOVPE environment Journal of Crystal Growth. 225: 405-409. DOI: 10.1016/S0022-0248(01)00896-X |
0.803 |
|
| 2000 |
Tu VJ, Jeong JY, Schütze A, Babayan SE, Ding G, Selwyn GS, Hicks RF. Tantalum etching with a nonthermal atmospheric-pressure plasma Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 18: 2799-2805. DOI: 10.1116/1.1310652 |
0.798 |
|
| 2000 |
Begarney MJ, Li L, Li CH, Law DC, Fu Q, Hicks RF. Reflectance-difference spectroscopy of mixed arsenic-rich phases of gallium arsenide (001) Physical Review B - Condensed Matter and Materials Physics. 62: 8092-8097. DOI: 10.1103/Physrevb.62.8092 |
0.764 |
|
| 2000 |
Fu Q, Li L, Hicks RF. Ab initio cluster calculations of hydrogenated GaAs(001) surfaces Physical Review B - Condensed Matter and Materials Physics. 61: 11034-11040. DOI: 10.1103/Physrevb.61.11034 |
0.327 |
|
| 2000 |
Li L, Fu Q, Li CH, Han BK, Hicks RF. Determination of InP(001) surface reconstructions by STM and infrared spectroscopy of adsorbed hydrogen Physical Review B - Condensed Matter and Materials Physics. 61: 10223-10228. DOI: 10.1103/Physrevb.61.10223 |
0.575 |
|
| 2000 |
Li L, Fu Q, Li CH, Han B, Hicks RF. Determination of InP(001) surface reconstructions by STM and infrared spectroscopy of adsorbed hydrogen Physical Review B. 61: 10223-10228. DOI: 10.1103/PhysRevB.61.10223 |
0.478 |
|
| 2000 |
Law DC, Li L, Begarney MJ, Hicks RF. Analysis of the growth modes for gallium arsenide metalorganic vapor-phase epitaxy Journal of Applied Physics. 88: 508-512. DOI: 10.1063/1.373687 |
0.796 |
|
| 2000 |
Li CH, Li L, Fu Q, Begarney MJ, Hicks RF. Stress-induced anisotropy of phosphorous islands on gallium arsenide Applied Physics Letters. 77: 2139-2141. DOI: 10.1063/1.1314290 |
0.773 |
|
| 2000 |
Li CH, Li L, Fu Q, Begarney MJ, Hicks RF. Stress-induced anisotropy of phosphorous islands on gallium arsenide Applied Physics Letters. 77: 2139-2141. DOI: 10.1063/1.1314290 |
0.362 |
|
| 2000 |
Park J, Henins I, Herrmann HW, Selwyn GS, Jeong JY, Hicks RF, Shim D, Chang CS. An atmospheric pressure plasma source Applied Physics Letters. 76: 288-290. DOI: 10.1063/1.125724 |
0.44 |
|
| 2000 |
Jeong JY, Park J, Henins I, Babayan SE, Tu VJ, Selwyn GS, Ding G, Hicks RF. Reaction Chemistry in the Afterglow of an Oxygen−Helium, Atmospheric-Pressure Plasma The Journal of Physical Chemistry A. 104: 8027-8032. DOI: 10.1021/Jp0012449 |
0.377 |
|
| 2000 |
Fu Q, Li L, Li CH, Begarney MJ, Law DC, Hicks RF. Mechanism of arsine adsorption on the gallium-rich GaAs(001)-(4 × 2) surface Journal of Physical Chemistry B. 104: 5595-5602. DOI: 10.1021/Jp0005827 |
0.795 |
|
| 2000 |
Fu Q, Li L, Li CH, Begarney MJ, Law DC, Hicks RF. Mechanism of Arsine Adsorption on the Gallium-Rich GaAs(001)−(4 × 2) Surface The Journal of Physical Chemistry B. 104: 5595-5602. DOI: 10.1021/jp0005827 |
0.687 |
|
| 1999 |
Jeong JY, Babayan SE, Schütze A, Tu VJ, Park J, Henins I, Selwyn GS, Hicks RF. Etching polyimide with a nonequilibrium atmospheric-pressure plasma jet Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 17: 2581-2585. DOI: 10.1116/1.581999 |
0.789 |
|
| 1999 |
Li L, Han BK, Fu Q, Hicks RF. Example of a Compound Semiconductor Surface that Mimics Silicon: The InP(001)-(2 × 1) Reconstruction Physical Review Letters. 82: 1879-1882. DOI: 10.1103/Physrevlett.82.1879 |
0.395 |
|
| 1999 |
Begarney MJ, Li L, Han BK, Law DC, Li CH, Yoon H, Goorsky MS, Hicks RF. Formation of etch pits during carbon doping of gallium arsenide with carbon tetrachloride by metalorganic vapor-phase epitaxy Journal of Applied Physics. 86: 318-324. DOI: 10.1063/1.370731 |
0.797 |
|
| 1999 |
Gan S, Li L, Begarney MJ, Law D, Han BK, Hicks RF. Step structure of arsenic-terminated vicinal Ge (100) Journal of Applied Physics. 85: 2004-2006. DOI: 10.1063/1.369176 |
0.802 |
|
| 1999 |
Gan S, Li L, Begarney MJ, Law D, Han B, Hicks RF. Step structure of arsenic-terminated vicinal Ge (100) Journal of Applied Physics. 85: 2004-2006. DOI: 10.1063/1.369176 |
0.559 |
|
| 1999 |
Li L, Han BK, Law D, Li CH, Fu Q, Hicks RF. A phosphorous-rich structure of InP (001) produced by metalorganic vapor-phase epitaxy Applied Physics Letters. 75: 683-685. DOI: 10.1063/1.124481 |
0.396 |
|
| 1999 |
Li L, Han B, Law D, Li CH, Fu Q, Hicks RF. A phosphorous-rich structure of InP (001) produced by metalorganic vapor-phase epitaxy Applied Physics Letters. 75: 683-685. DOI: 10.1063/1.124481 |
0.587 |
|
| 1999 |
Fu Q, Li L, Begarney MJ, Man BK, Law DC, Hicks RF. Site-specific chemistry of gallium arsenide metalorganic chemical vapor deposition Journal De Physique. Iv : Jp. 9: Pr8-3-Pr8-14. DOI: 10.1051/Jp4:1999801 |
0.8 |
|
| 1998 |
Schütze A, Jeong JY, Babayan SE, Park J, Selwyn GS, Hicks RF. The atmospheric-pressure plasma jet: A review and comparison to other plasma sources Ieee Transactions On Plasma Science. 26: 1685-1694. DOI: 10.1109/27.747887 |
0.789 |
|
| 1998 |
Babayan SE, Jeong JY, Tu VJ, Park J, Selwyn GS, Hicks RF. Deposition of silicon dioxide films with an atmospheric-pressure plasma jet Plasma Sources Science and Technology. 7: 286-288. DOI: 10.1088/0963-0252/7/3/006 |
0.789 |
|
| 1998 |
Jeong JY, Babayan SE, Tu VJ, Park J, Henins I, Hicks RF, Selwyn GS. Etching materials with an atmospheric-pressure plasma jet Plasma Sources Science and Technology. 7: 282-285. DOI: 10.1088/0963-0252/7/3/005 |
0.787 |
|
| 1998 |
Li L, Han BK, Hicks RF. Surface phases of GaAs and InAs (001) found in the metalorganic vapor-phase epitaxy environment Applied Physics Letters. 73: 1239-1241. DOI: 10.1063/1.122139 |
0.394 |
|
| 1998 |
Han BK, Li L, Fu Q, Hicks RF. Structure and composition of the c(4×4) reconstruction formed during gallium arsenide metalorganic vapor-phase epitaxy Applied Physics Letters. 72: 3347-3349. DOI: 10.1063/1.121599 |
0.381 |
|
| 1998 |
Li L, Gan S, Han BK, Qi H, Hicks RF. The reaction of carbon tetrachloride with gallium arsenide (001) Applied Physics Letters. 72: 951-953. DOI: 10.1063/1.120620 |
0.391 |
|
| 1998 |
Li L, Han B, Gan S, Qi H, Hicks RF. Observation of the atomic surface structure of GaAs (001) films grown by metalorganic vapor-phase epitaxy Surface Science. 398: 386-394. DOI: 10.1016/S0039-6028(98)80044-7 |
0.437 |
|
| 1998 |
Gan S, Li L, Nguyen T, Qi H, Hicks RF, Yang M. Scanning tunneling microscopy of chemically cleaned germanium (100) surfaces Surface Science. 395: 69-74. DOI: 10.1016/S0039-6028(97)00608-0 |
0.401 |
|
| 1998 |
Li L, Han BK, Law D, Begarney M, Hicks RF. Gallium arsenide and indium arsenide surfaces produced by metalorganic vapor-phase epitaxy Journal of Crystal Growth. 195: 28-33. DOI: 10.1016/S0022-0248(98)00644-7 |
0.429 |
|
| 1998 |
Li L, Han B, Law D, Begarney M, Hicks R. Gallium arsenide and indium arsenide surfaces produced by metalorganic vapor-phase epitaxy Journal of Crystal Growth. 195: 28-33. DOI: 10.1016/S0022-0248(98)00644-7 |
0.618 |
|
| 1998 |
Begarney MJ, Warddrip ML, Kappers MJ, Hicks RF. Kinetics of carbon tetrachloride decomposition during the metalorganic vapor-phase epitaxy of gallium arsenide and indium arsenide Journal of Crystal Growth. 193: 305-315. DOI: 10.1016/S0022-0248(98)00548-X |
0.82 |
|
| 1998 |
Kappers MJ, Warddrip ML, Hicks RF. Ligand exchange reactions in InGaAs metalorganic vapor-phase epitaxy Journal of Crystal Growth. 191: 332-340. DOI: 10.1016/S0022-0248(98)00174-2 |
0.361 |
|
| 1998 |
Han BK, Li L, Kappers MJ, Hicks RF, Yoon H, Goorsky MS, Higa KT. Characterization of InGaAs/GaAs(001) films grown by metalorganic vapor phase epitaxy using alternative sources Journal of Electronic Materials. 27: 81-84. DOI: 10.1007/S11664-998-0193-1 |
0.359 |
|
| 1998 |
Li L, Qi H, Gan S, Han BK, Hicks RF. Site-specific chemistry of carbon tetrachloride decomposition onGaAs(001) Applied Physics a: Materials Science and Processing. 66. DOI: 10.1007/S003390051191 |
0.382 |
|
| 1997 |
Gan S, Li L, Han B, Hicks RF. Composition and Structure of Vicinal Ge(100) Surfaces Exposed to Tertiarybutylarsine Mrs Proceedings. 485. DOI: 10.1557/Proc-485-247 |
0.386 |
|
| 1997 |
Kappers MJ, Wilkerson KJ, Hicks RF. Effects of Ligand Exchange Reactions on the Composition of Cd1-yZnyTe Grown by Metalorganic Vapor-Phase Epitaxy The Journal of Physical Chemistry B. 101: 4882-4888. DOI: 10.1021/Jp970062K |
0.333 |
|
| 1997 |
Wilkerson KJ, Kappers MJ, Hicks RF. Reaction chemistry of ZnTe metalorganic vapor-phase epitaxy Journal of Physical Chemistry A. 101: 2451-2458. DOI: 10.1021/Jp963990C |
0.32 |
|
| 1997 |
Au WK, Kappers MJ, Hicks RF. Evaluation of a zero-discharge reactor for the chemical vapor deposition of mercury telluride Journal of Crystal Growth. 173: 386-392. DOI: 10.1016/S0022-0248(96)01052-4 |
0.324 |
|
| 1997 |
Warddrip ML, Kappers MJ, Li L, Qi H, Han BK, Gan S, Hicks RF. Mechanism of doping gallium arsenide with carbon tetrachloride during organometallic vapor-phase epitaxy Journal of Electronic Materials. 26: 1189-1193. DOI: 10.1007/S11664-997-0018-7 |
0.43 |
|
| 1996 |
Adamson SD, Han BK, Hicks RF. Site-specific reaction kinetics for gallium arsenide metalorganic vapor-phase epitaxy Applied Physics Letters. 69: 3236-3238. DOI: 10.1063/1.118021 |
0.334 |
|
| 1996 |
Qi H, Gee PE, Hicks RF. Sites for arsine adsorption on GaAs(001) Surface Science. 347: 289-302. DOI: 10.1016/0039-6028(95)00982-5 |
0.332 |
|
| 1996 |
Kappers MJ, McDaniel AH, Hicks RF. Controlling the group II composition in CdZnTe alloys grown by organometallic vapor phase epitaxy: A kinetic model Journal of Crystal Growth. 160: 310-319. DOI: 10.1016/0022-0248(95)00935-3 |
0.336 |
|
| 1995 |
McDaniel AH, Wilkerson KJ, Hicks RF. Chemistry of cadmium telluride organometallic vapor-phase epitaxy Journal of Physical Chemistry. 99: 3574-3582. DOI: 10.1021/J100011A026 |
0.351 |
|
| 1995 |
Gee PE, Qi H, Hicks RF. Sites for trimethylgallium adsorption on GaAs(001) Surface Science. 330: 135-146. DOI: 10.1016/0039-6028(95)00245-6 |
0.346 |
|
| 1995 |
Qi H, Gee PE, Nguyen T, Hicks RF. Sites for hydrogen adsorption on GaAs(001) Surface Science. 323: 6-18. DOI: 10.1016/0039-6028(94)00576-1 |
0.383 |
|
| 1994 |
Gee PE, Qi H, Hicks RF. Infrared Study of Trimethylgallium Adsorption on GaAs(100) Mrs Proceedings. 340. DOI: 10.1557/Proc-340-105 |
0.365 |
|
| 1994 |
Qi H, Gee PE, Hicks RF. Infrared study of hydrogen adsorbed on c(2×8) and (2×6) GaAs(100) Physical Review Letters. 72: 250-253. DOI: 10.1103/Physrevlett.72.250 |
0.358 |
|
| 1993 |
Windeler RS, Hicks RF. Examination of Gallium Arsenide Mocvd Reaction Mechanisms Mrs Proceedings. 312. DOI: 10.1557/Proc-312-151 |
0.341 |
|
| 1993 |
Liu B, Hicks RF, Zinck JJ. Reaction engineering of photo-assisted chemical vapor deposition Journal of Crystal Growth. 129: 111-118. DOI: 10.1016/0022-0248(93)90440-8 |
0.318 |
|
| 1993 |
Kooh AB, Han WJ, Hicks RF. Kinetics of heptane reforming on Pt/L zeolite Catalysis Letters. 18: 209-218. DOI: 10.1007/Bf00769439 |
0.321 |
|
| 1993 |
Han WJ, Kooh AB, Hicks RF. Infrared spectroscopy of carbon monoxide adsorbed on Pt/L zeolite Catalysis Letters. 18: 193-208. DOI: 10.1007/Bf00769438 |
0.31 |
|
| 1992 |
Niemer B, Zinn AA, Stovall WK, Gee PE, Hicks RF, Kaesz HD. Organometallic chemical vapor deposition of tungsten metal, and suppression of carbon incorporation by codeposition of platinum Applied Physics Letters. 61: 1793-1795. DOI: 10.1063/1.108402 |
0.378 |
|
| 1992 |
Xue Z, Thridandam H, Kaesz HD, Hicks RF. Organometallic chemical vapor deposition of platinum. Reaction kinetics and vapor pressures of precursors Chemistry of Materials. 4: 162-166. DOI: 10.1021/Cm00019A032 |
0.361 |
|
| 1992 |
Liu B, Hicks RF, Zinck JJ. Chemistry of photo-assisted organometallic vapor-phase epitaxy of cadnium telluride Journal of Crystal Growth. 123: 500-518. DOI: 10.1016/0022-0248(92)90612-M |
0.363 |
|
| 1992 |
McDaniel AH, Liu B, Hicks RF. Coupled gas and surface reactions in the organometallic vapor-phase epitaxy of cadmium telluride Journal of Crystal Growth. 124: 676-683. DOI: 10.1016/0022-0248(92)90535-Q |
0.357 |
|
| 1991 |
Liu B, McDaniel AH, Hicks RF. Modeling of the coupled kinetics and transport in the organometallic vapor-phase epitaxy of cadmium telluride Journal of Crystal Growth. 112: 192-202. DOI: 10.1016/0022-0248(91)90924-T |
0.403 |
|
| 1991 |
Kooh AB, Han WJ, Lee RG, Hicks RF. Effect of catalyst structure and carbon deposition on heptane oxidation over supported platinum and palladium Journal of Catalysis. 130: 374-391. DOI: 10.1016/0021-9517(91)90121-J |
0.323 |
|
| 1990 |
Hicks RF, Qi H, Young ML, Lee RG. Structure sensitivity of methane oxidation over platinum and palladium Journal of Catalysis. 122: 280-294. DOI: 10.1016/0021-9517(90)90282-O |
0.32 |
|
| 1990 |
Hicks RF, Qi H, Kooh AB, Fischel LB. Carbon monoxide restructuring of palladium crystallite surfaces Journal of Catalysis. 124: 488-502. DOI: 10.1016/0021-9517(90)90195-P |
0.351 |
|
| 1988 |
Kaesz HD, Williams RS, Hicks RF, Chen YA, Xue Z, Xu D, Shuh DK, Thridandamt H. Low-Temperature Organometallic Chemical Vapor Deposition of Transition Metals Mrs Proceedings. 131. DOI: 10.1557/Proc-131-395 |
0.378 |
|
| 1988 |
Chen YJ, Kaesz HD, Thridandam H, Hicks RF. Low-temperature organometallic chemical vapor deposition of platinum Applied Physics Letters. 53: 1591-1592. DOI: 10.1063/1.99921 |
0.395 |
|
| 1988 |
Joseph DM, Balagopal R, Hicks RF, Sadwick LP, Wang KL. Observation of carbon incorporation during gallium arsenide growth by molecular beam epitaxy Applied Physics Letters. 53: 2203-2204. DOI: 10.1063/1.100281 |
0.313 |
|
| 1988 |
Fleisch TH, Bell AT, Regalbuto JR, Thomson RT, Lane GS, Wolf EE, Hicks RF. X-ray photoemission studies of strong metal-support interaction (SMSI): Metal decoration and electronic effects Studies in Surface Science and Catalysis. 38: 791-802. DOI: 10.1016/S0167-2991(09)60707-2 |
0.437 |
|
| 1988 |
Joseph DM, Hicks RF, Sadwick LP, Wang KL. Vibrational spectra of hydrogen atoms adsorbed on MBE-grown GaAs(100) Surface Science. 204. DOI: 10.1016/0039-6028(88)90261-0 |
0.371 |
|
| 1985 |
Hicks RF, Bell AT. Kinetics of methanol and methane synthesis over Pd/SiO2 and Pd/La2O3 Journal of Catalysis. 91: 104-115. DOI: 10.1016/0021-9517(85)90293-3 |
0.407 |
|
| 1985 |
HICKS RF, BELL AT. ChemInform Abstract: KINETICS OF METHANOL AND METHANE SYNTHESIS OVER PALLADIUM/SILICA AND PALLADIUM/LANTHANUM OXIDE Chemischer Informationsdienst. 16. DOI: 10.1002/chin.198518080 |
0.342 |
|
| 1985 |
HICKS RF, BELL AT. ChemInform Abstract: EFFECTS OF METAL-SUPPORT INTERACTIONS ON THE HYDROGENATION OF CARBON MONOXIDE OVER PALLADIUM/SILICA AND PALLADIUM/LANTHANUM OXIDE Chemischer Informationsdienst. 16. DOI: 10.1002/chin.198515104 |
0.349 |
|
| 1984 |
Hicks RF, Yen Q, Bell AT, Fleisch TH. The influence of metal-support interactions on the catalytic properties of Pd/La2O3 Applications of Surface Science. 19: 315-329. DOI: 10.1016/0378-5963(84)90069-2 |
0.387 |
|
| 1984 |
Hicks RF, Yen QJ, Bell AT. Effects of metal-support interactions on the chemisorption of H2 and CO on Pd SiO2 and Pd La2O3 Journal of Catalysis. 89: 498-510. DOI: 10.1016/0021-9517(84)90326-9 |
0.42 |
|
| 1984 |
Hicks RF, Bell AT. Effects of metal-support interactions on the hydrogenation of CO over Pd SiO2 and Pd La2O3 Journal of Catalysis. 90: 205-220. DOI: 10.1016/0021-9517(84)90249-5 |
0.383 |
|
| 1984 |
Fleisch TH, Hicks RF, Bell AT. An XPS study of metal-support interactions on Pd SiO2 and Pd La2O3 Journal of Catalysis. 87: 398-413. DOI: 10.1016/0021-9517(84)90200-8 |
0.411 |
|
| 1981 |
Ryndin YA, Hicks RF, Bell AT, Yermakov YI. Effects of metal-support interactions on the synthesis of methanol over palladium Journal of Catalysis. 70: 287-297. DOI: 10.1016/0021-9517(81)90341-9 |
0.379 |
|
| 1981 |
Hicks RF, Kellner CS, Savatsky BJ, Hecker WC, Bell AT. Design and construction of a reactor for in situ infrared studies of catalytic reactions Journal of Catalysis. 71: 216-218. DOI: 10.1016/0021-9517(81)90219-0 |
0.469 |
|
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