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Robyn L. Woo, Ph.D. - Publications

Affiliations: 
2008 University of California, Los Angeles, Los Angeles, CA 
Area:
Chemical Engineering
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19 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2014 Chiu PT, Law DC, Woo RL, Singer SB, Bhusari D, Hong WD, Zakaria A, Boisvert J, Mesropian S, King RR, Karam NH. 35.8% space and 38.8% terrestrial 5J direct bonded cells 2014 Ieee 40th Photovoltaic Specialist Conference, Pvsc 2014. 11-13. DOI: 10.1109/PVSC.2014.6924957  0.574
2014 Chiu PT, Law DC, Woo RL, Singer SB, Bhusari D, Hong WD, Zakaria A, Boisvert J, Mesropian S, King RR, Karam NH. Direct semiconductor bonded 5J cell for space and terrestrial applications Ieee Journal of Photovoltaics. 4: 493-497. DOI: 10.1109/Jphotov.2013.2279336  0.672
2013 Law DC, Boisvert JC, Rehder EM, Chiu PT, Mesropian S, Woo RL, Liu XQ, Hong WD, Fetzer CM, Singer SB, Bhusari DM, Edmondson KM, Zakaria A, Jun B, Krut DD, et al. Recent progress of spectrolab high-efficiency space solar cells Proceedings of Spie - the International Society For Optical Engineering. 8876. DOI: 10.1117/12.2026756  0.67
2013 Leite MS, Woo RL, Munday JN, Hong WD, Mesropian S, Law DC, Atwater HA. Towards an optimized all lattice-matched InAlAs/InGaAsP/InGaAs multijunction solar cell with efficiency >50% Applied Physics Letters. 102. DOI: 10.1063/1.4758300  0.645
2011 Bai X, Yuan P, McDonald P, Boisvert J, Chang J, Woo R, Labios E, Sudharsanan R, Krainak M, Yang G, Sun X, Lu W, McIntosh D, Zhou Q, Campbell J. GHz low noise short wavelength infrared (SWIR) photoreceivers Proceedings of Spie - the International Society For Optical Engineering. 8037. DOI: 10.1117/12.884193  0.307
2011 Leite MS, Woo RL, Hong WD, Law DC, Atwater HA. InAlAs epitaxial growth for wide band gap solar cells Conference Record of the Ieee Photovoltaic Specialists Conference. 000780-000783. DOI: 10.1109/PVSC.2011.6186070  0.612
2011 Woo RL, Hong WD, Mesropian S, Leite MS, Atwater HA, Law DC. First demonstration of monolithic InP-based InAlAs/InGaAsP/InGaAs triple junction solar cells Conference Record of the Ieee Photovoltaic Specialists Conference. 000295-000298. DOI: 10.1109/PVSC.2011.6185903  0.623
2011 Leite MS, Woo RL, Hong WD, Law DC, Atwater HA. Wide-band-gap InAlAs solar cell for an alternative multijunction approach Applied Physics Letters. 98. DOI: 10.1063/1.3531756  0.656
2010 Boca A, Boisvert JC, Law DC, Mesropian S, Karam NH, Hong WD, Woo RL, Bhusari DM, Turevskaya E, Mack P, Glatkowski P. Carbon nanotube-composite wafer bonding for ultra-high efficiency III-V multijunction solar cells Conference Record of the Ieee Photovoltaic Specialists Conference. 3310-3315. DOI: 10.1109/PVSC.2010.5617076  0.599
2009 Woo RL, Gao L, Goel N, Hudait MK, Wang KL, Kodambaka S, Hicks RF. Kinetic control of self-catalyzed indium phosphide nanowires, nanocones, and nanopillars. Nano Letters. 9: 2207-11. PMID 19419156 DOI: 10.1021/Nl803584U  0.541
2009 Gao L, Woo RL, Liang B, Pozuelo M, Prikhodko S, Jackson M, Goel N, Hudait MK, Huffaker DL, Goorsky MS, Kodambaka S, Hicks RF. Self-catalyzed epitaxial growth of vertical indium phosphide nanowires on silicon. Nano Letters. 9: 2223-8. PMID 19413340 DOI: 10.1021/Nl803567V  0.577
2008 Woo RL, Xiao R, Kobayashi Y, Gao L, Goel N, Hudait MK, Mallouk TE, Hicks RF. Effect of twinning on the photoluminescence and photoelectrochemical properties of indium phosphide nanowires grown on silicon (111). Nano Letters. 8: 4664-9. PMID 19367937 DOI: 10.1021/Nl802433U  0.546
2008 Woo RL, Malouf G, Cheng SF, Woo RN, Goorsky M, Hicks RF. Red shift in the photoluminescence of indium gallium arsenide nitride induced by annealing in nitrogen trifluoride Journal of Crystal Growth. 310: 579-583. DOI: 10.1016/J.Jcrysgro.2007.11.087  0.554
2008 Cheng SF, Gao L, Woo RL, Pangan A, Malouf G, Goorsky MS, Wang KL, Hicks RF. Selective area metalorganic vapor-phase epitaxy of gallium arsenide on silicon Journal of Crystal Growth. 310: 562-569. DOI: 10.1016/J.Jcrysgro.2007.11.056  0.583
2007 Das U, Raghavachari K, Woo RL, Hicks RF. Phosphine adsorption on the In-rich InP(001) surface: evidence of surface dative bonds at room temperature. Langmuir : the Acs Journal of Surfaces and Colloids. 23: 10109-15. PMID 17764199 DOI: 10.1021/La700790H  0.52
2007 Cheng SF, Woo RL, Noori AM, Malouf G, Goorsky MS, Hicks RF. Metalorganic chemical vapor deposition of InGaAsN using dilute nitrogen trifluoride Journal of Crystal Growth. 299: 277-281. DOI: 10.1016/J.Jcrysgro.2006.11.207  0.553
2006 Woo RL, Li L, Hicks RF. Spectroscopic studies of compound semiconductor surfaces as it relates to the growth of nanomaterials Proceedings of Spie - the International Society For Optical Engineering. 6325. DOI: 10.1117/12.682223  0.574
2006 Woo RL, Das U, Cheng SF, Chen G, Raghavachari K, Hicks RF. Phosphine and tertiarybutylphosphine adsorption on the indium-rich InP (0 0 1)-(2 × 4) surface Surface Science. 600: 4888-4895. DOI: 10.1016/J.Susc.2006.08.014  0.542
2005 Sun Y, Cheng SF, Chen G, Woo RL, Hicks RF. The structure of indium phosphide (001) treated with trimethylantimony in a metalorganic vapor-phase epitaxy reactor Journal of Applied Physics. 97. DOI: 10.1063/1.1897485  0.531
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