Colombo R. Bolognesi

1995-2006 Simon Fraser University, Burnaby, British Columbia, Canada 
 2006- Information Technology and Electrical Engineering Eidgenössische Technische Hochschule Zürich, Zürich, ZH, Switzerland 
Millimiter-​Wave Electronics
"Colombo R. Bolognesi"


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Herbert Kroemer grad student 1993 UC Santa Barbara (Physics Tree)
 (The physics, design, growth, and characterization of millimeter-wave InAs/AlSb-Based heterostructure field-effect transistors)
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Han D, Ruiz DC, Bonomo G, et al. (2020) Low-Noise Microwave Performance of 30 nm GaInAs MOS-HEMTs: Comparison to Low-Noise HEMTs Ieee Electron Device Letters. 41: 1320-1323
Bolognesi CR, Quan W, Arabhavi AM, et al. (2019) Advances in InP/Ga(In)AsSb double heterojunction bipolar transistors (DHBTs) Japanese Journal of Applied Physics. 58
Saranovac T, Ruiz DC, Han D, et al. (2019) Effects of Electrochemical Etching on InP HEMT Fabrication Ieee Transactions On Semiconductor Manufacturing. 32: 496-501
Ruiz DC, Saranovac T, Han D, et al. (2019) InAs Channel Inset Effects on the DC, RF, and Noise Properties of InP pHEMTs Ieee Transactions On Electron Devices. 66: 4685-4691
Bolognesi CR. (2018) Advances in InP Double Heterojunction Bipolar Transistors The Japan Society of Applied Physics
Mukherjee C, Raya C, Ardouin B, et al. (2018) Scalable Compact Modeling of III–V DHBTs: Prospective Figures of Merit Toward Terahertz Operation Ieee Transactions On Electron Devices. 65: 5357-5364
Weimann NG, Johansen TK, Stoppel D, et al. (2018) Transferred-Substrate InP/GaAsSb Heterojunction Bipolar Transistor Technology With ${f}_{\text{max}}$ ~ 0.53 THz Ieee Transactions On Electron Devices. 65: 3704-3710
Shivan T, Weimann N, Hossain M, et al. (2018) A Highly Efficient Ultrawideband Traveling-Wave Amplifier in InP DHBT Technology Ieee Microwave and Wireless Components Letters. 28: 1029-1031
Quan W, Arabhavi AM, Fluckiger R, et al. (2018) Quaternary Graded-Base InP/GaInAsSb DHBTs With ${f}_{\text{T}}$ / ${f}_{\text{MAX}}$ = 547/784 GHz Ieee Electron Device Letters. 39: 1141-1144
Saranovac T, Hambitzer A, Ruiz DC, et al. (2017) Pt Gate Sink-In Process Details Impact on InP HEMT DC and RF Performance Ieee Transactions On Semiconductor Manufacturing. 30: 462-467
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