Colombo R. Bolognesi
Affiliations: | 1995-2006 | Simon Fraser University, Burnaby, British Columbia, Canada | |
| 2006- | Information Technology and Electrical Engineering | Eidgenössische Technische Hochschule Zürich, Zürich, ZH, Switzerland |
Area:
Millimiter-Wave ElectronicsWebsite:
https://ee.ethz.ch/the-department/people-a-z/person-detail.html?persid=131831Google:
"Colombo R. Bolognesi"Bio:
Parents
Sign in to add mentor| Herbert Kroemer | grad student | 1993 | UC Santa Barbara (Physics Tree) | |
| (The physics, design, growth, and characterization of millimeter-wave InAs/AlSb-Based heterostructure field-effect transistors) | ||||
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Publications
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| Han D, Ruiz DC, Bonomo G, et al. (2020) Low-Noise Microwave Performance of 30 nm GaInAs MOS-HEMTs: Comparison to Low-Noise HEMTs Ieee Electron Device Letters. 41: 1320-1323 |
| Bolognesi CR, Quan W, Arabhavi AM, et al. (2019) Advances in InP/Ga(In)AsSb double heterojunction bipolar transistors (DHBTs) Japanese Journal of Applied Physics. 58 |
| Saranovac T, Ruiz DC, Han D, et al. (2019) Effects of Electrochemical Etching on InP HEMT Fabrication Ieee Transactions On Semiconductor Manufacturing. 32: 496-501 |
| Ruiz DC, Saranovac T, Han D, et al. (2019) InAs Channel Inset Effects on the DC, RF, and Noise Properties of InP pHEMTs Ieee Transactions On Electron Devices. 66: 4685-4691 |
| Bolognesi CR. (2018) Advances in InP Double Heterojunction Bipolar Transistors The Japan Society of Applied Physics |
| Mukherjee C, Raya C, Ardouin B, et al. (2018) Scalable Compact Modeling of III–V DHBTs: Prospective Figures of Merit Toward Terahertz Operation Ieee Transactions On Electron Devices. 65: 5357-5364 |
| Weimann NG, Johansen TK, Stoppel D, et al. (2018) Transferred-Substrate InP/GaAsSb Heterojunction Bipolar Transistor Technology With ${f}_{\text{max}}$ ~ 0.53 THz Ieee Transactions On Electron Devices. 65: 3704-3710 |
| Shivan T, Weimann N, Hossain M, et al. (2018) A Highly Efficient Ultrawideband Traveling-Wave Amplifier in InP DHBT Technology Ieee Microwave and Wireless Components Letters. 28: 1029-1031 |
| Quan W, Arabhavi AM, Fluckiger R, et al. (2018) Quaternary Graded-Base InP/GaInAsSb DHBTs With ${f}_{\text{T}}$ / ${f}_{\text{MAX}}$ = 547/784 GHz Ieee Electron Device Letters. 39: 1141-1144 |
| Saranovac T, Hambitzer A, Ruiz DC, et al. (2017) Pt Gate Sink-In Process Details Impact on InP HEMT DC and RF Performance Ieee Transactions On Semiconductor Manufacturing. 30: 462-467 |