Martin Adamcyk, Ph.D.
Affiliations: | 2002 | University of British Columbia, Vancouver, Vancouver, BC, Canada |
Area:
Materials Science EngineeringGoogle:
"Martin Adamcyk"Parents
Sign in to add mentor| Thomas Tiedje | grad student | 2002 | UBC (Physics Tree) | |
| (Epitaxial growth of dilute nitride -arsenide compound semiconductors by molecular beam epitaxy.) | ||||
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Publications
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| Zangenberg N, Beaton DA, Tiedje T, et al. (2007) Molecular beam epitaxy growth of the dilute nitride GaAs1−xNx with a helical resonator plasma source Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 25: 850-856 |
| Karaiskaj D, Mascarenhas A, Klem JF, et al. (2007) Excitons bound to nitrogen pairs in GaAs as seen by photoluminescence of high spectral and spatial resolution Physical Review B. 76 |
| Seong M, Francoeur S, Yoon S, et al. (2005) Bi-induced vibrational modes in GaAsBi Superlattices and Microstructures. 37: 394-400 |
| Nodwell E, Adamcyk M, Ballestad A, et al. (2004) Tight-binding model for the x-ray absorption and emission spectra of diluteGaNxAs1−xat the nitrogenKedge Physical Review B. 69 |
| Ballestad A, Tiedje T, Schmid J, et al. (2004) Predicting GaAs surface shapes during MBE regrowth on patterned substrates Journal of Crystal Growth. 271: 13-21 |
| Francoeur S, Seong M, Mascarenhas A, et al. (2003) Band gap of GaAs1−xBix, 0 |
| Tixier S, Adamcyk M, Tiedje T, et al. (2003) Molecular beam epitaxy growth of GaAs1−xBix Applied Physics Letters. 82: 2245-2247 |
| Tixier S, Adamcyk M, Young E, et al. (2003) Surfactant enhanced growth of GaNAs and InGaNAs using bismuth Journal of Crystal Growth. 251: 449-454 |
| Adamcyk M, Ballestad A, Schmid JH, et al. (2002) Surfactant enhanced growth of GaNAs and InGaNAs using a Bi flux Mbe 2002 - 2002 12th International Conference On Molecular Beam Epitaxy. 275-276 |
| Schmid JH, Ballestad A, Ruck BJ, et al. (2002) Kinetic roughening of GaAs(001) during thermalCl2etching Physical Review B. 65 |