☰

Martin Adamcyk, Ph.D. - Publications

Affiliations: 
2002 University of British Columbia, Vancouver, Vancouver, BC, Canada 
Area:
Materials Science Engineering
Tree Info Similar researchers PubMed Report error

21 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2007 Zangenberg N, Beaton DA, Tiedje T, Tixier S, Adamcyk M, Kumaran R, MacKenzie JA, Nodwell E, Young EC, Sproule GI. Molecular beam epitaxy growth of the dilute nitride GaAs1−xNx with a helical resonator plasma source Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 25: 850-856. DOI: 10.1116/1.2748800  0.501
2007 Karaiskaj D, Mascarenhas A, Klem JF, Volz K, Stolz W, Adamcyk M, Tiedje T. Excitons bound to nitrogen pairs in GaAs as seen by photoluminescence of high spectral and spatial resolution Physical Review B. 76. DOI: 10.1103/Physrevb.76.125209  0.501
2005 Seong M, Francoeur S, Yoon S, Mascarenhas A, Tixier S, Adamcyk M, Tiedje T. Bi-induced vibrational modes in GaAsBi Superlattices and Microstructures. 37: 394-400. DOI: 10.1016/J.Spmi.2005.02.004  0.44
2004 Nodwell E, Adamcyk M, Ballestad A, Tiedje T, Tixier S, Webster SE, Young EC, Moewes A, Kurmaev EZ, van Buuren T. Tight-binding model for the x-ray absorption and emission spectra of diluteGaNxAs1−xat the nitrogenKedge Physical Review B. 69. DOI: 10.1103/Physrevb.69.155210  0.512
2004 Ballestad A, Tiedje T, Schmid J, Ruck B, Adamcyk M. Predicting GaAs surface shapes during MBE regrowth on patterned substrates Journal of Crystal Growth. 271: 13-21. DOI: 10.1016/J.Jcrysgro.2004.07.047  0.674
2003 Francoeur S, Seong M, Mascarenhas A, Tixier S, Adamcyk M, Tiedje T. Band gap of GaAs1−xBix, 0Applied Physics Letters. 82: 3874-3876. DOI: 10.1063/1.1581983  0.496
2003 Tixier S, Adamcyk M, Tiedje T, Francoeur S, Mascarenhas A, Wei P, Schiettekatte F. Molecular beam epitaxy growth of GaAs1−xBix Applied Physics Letters. 82: 2245-2247. DOI: 10.1063/1.1565499  0.598
2003 Tixier S, Adamcyk M, Young E, Schmid J, Tiedje T. Surfactant enhanced growth of GaNAs and InGaNAs using bismuth Journal of Crystal Growth. 251: 449-454. DOI: 10.1016/S0022-0248(02)02217-0  0.69
2002 Adamcyk M, Ballestad A, Schmid JH, Tiedje T, Tixier S, Young EC, Fink V, Kavanagh KL, Koveshnikov A. Surfactant enhanced growth of GaNAs and InGaNAs using a Bi flux Mbe 2002 - 2002 12th International Conference On Molecular Beam Epitaxy. 275-276. DOI: 10.1109/MBE.2002.1037866  0.517
2002 Schmid JH, Ballestad A, Ruck BJ, Adamcyk M, Tiedje T. Kinetic roughening of GaAs(001) during thermalCl2etching Physical Review B. 65. DOI: 10.1103/Physrevb.65.155315  0.659
2002 Adamcyk M, Schmid JH, Tiedje T, Koveshnikov A, Chahboun A, Fink V, Kavanagh KL. Comparison of strain relaxation in InGaAsN and InGaAs thin films Applied Physics Letters. 80: 4357-4359. DOI: 10.1063/1.1485124  0.66
2001 Ballestad A, Ruck BJ, Adamcyk M, Pinnington T, Tiedje T. Evidence from the surface morphology for nonlinear growth of epitaxial GaAs films. Physical Review Letters. 86: 2377-80. PMID 11289933 DOI: 10.1103/Physrevlett.86.2377  0.589
2001 Adamcyk M, Tixier S, Ruck BJ, Schmid JH, Tiedje T, Fink V, Jeffries M, Karaiskaj D, Kavanagh KL, Thewalt M. Faceting transition in epitaxial growth of dilute GaNAs films on GaAs Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 19: 1417-1421. DOI: 10.1116/1.1386379  0.621
2000 Adamcyk M, Ballestad A, Pinnington T, Tiedje T, Davies M, Feng Y. Smoothing of textured GaAs surfaces during molecular beam epitaxy growth Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 18: 1488. DOI: 10.1116/1.591410  0.599
2000 Sfigakis F, Paddon P, Pacradouni V, Adamcyk M, Nicoll C, Cowan A, Tiedje T, Young J. Near-infrared refractive index of thick, laterally oxidized AlGaAs cladding layers Journal of Lightwave Technology. 18: 199-202. DOI: 10.1109/50.822793  0.465
2000 Adamcyk M, Pinnington T, Ballestad A, Tiedje T. Effect of the starting surface on the morphology of MBE-grown GaAs Materials Science and Engineering: B. 75: 153-156. DOI: 10.1016/S0921-5107(00)00352-4  0.61
1999 ADAMCYK M, EISEBITT S, KARL A, NICOLL C, PINNINGTON T, SCHERER R, TIEDJE T, EBERHARDT W. SURFACE ROUGHNESS AND RESONANT SCATTERING EFFECTS IN SOFT X-RAY SPECKLE FROM RANDOM SEMICONDUCTOR INTERFACES Surface Review and Letters. 6: 1121-1128. DOI: 10.1142/S0218625X99001244  0.57
1999 Adamcyk M, Nicoll C, Pinnington T, Tiedje T, Eisebitt S, Karl A, Scherer R, Eberhardt W. Coherent soft x-ray scattering from InP islands on a semiconductor substrate Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 17: 1728. DOI: 10.1116/1.590816  0.561
1998 Elsebitt S, Karl A, Scherer R, Eberhardt W, Adamcyk M, Tiedje T, Pistonesi C. Speckle with soft X-rays: A demonstration Synchrotron Radiation News. 11: 15-19. DOI: 10.1080/08940889808260953  0.485
1998 Adamcyk M, Beaudoin M, Kelson I, Levy Y, Tiedje T. Diffusion studies of Ra and Pb in GaAs by the alpha-particle energy loss method Journal of Applied Physics. 84: 6003-6006. DOI: 10.1063/1.368877  0.488
1998 Beaudoin M, Adamcyk M, Gelbart Z, Giesen U, Kelson I, Levy Y, MacKenzie JA, Tiedje T. Film thickness and composition monitoring during growth by molecular beam epitaxy using alpha particle energy loss Applied Physics Letters. 72: 3288-3290. DOI: 10.1063/1.121626  0.553
Show low-probability matches.