Pouya Valizadeh, Ph.D.
Affiliations: | 2005 | University of Michigan, Ann Arbor, Ann Arbor, MI |
Area:
Electronics and Electrical EngineeringGoogle:
"Pouya Valizadeh"Parents
Sign in to add mentor| Dimitris Pavlidis | grad student | 2005 | University of Michigan | |
| (Electrical characterization of aluminum gallium nitride/gallium nitride MODFET: A reliability driven low-frequency noise-based study.) | ||||
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Publications
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| Gosselin J, Valizadeh P. (2018) Theoretical Evaluation of the Effects of Isolation-Feature Size and Geometry on the Built-In Strain and 2-D Electron Gas Density of AlGaN/GaN Heterostructures Ieee Transactions On Electron Devices. 65: 4800-4806 |
| Mojaver HR, Valizadeh P. (2018) Modeling the Reverse Gate-Leakage Current in GaN-Channel HFETs: Realistic Assessment of Fowler–Nordheim and Leakage at Mesa Sidewalls Ieee Transactions On Electron Devices. 65: 3156-3162 |
| Mojaver HR, Gosselin J, Valizadeh P. (2017) Use of a bilayer lattice-matched AlInGaN barrier for improving the channel carrier confinement of enhancement-mode AlInGaN/GaN hetero-structure field-effect transistors Journal of Applied Physics. 121: 244502 |
| Mojaver HR, Valizadeh P. (2016) Reverse Gate-Current of AlGaN/GaN HFETs: Evidence of Leakage at Mesa Sidewalls Ieee Transactions On Electron Devices. 63: 1444-1449 |
| Mojaver HR, Manouchehri F, Valizadeh P. (2016) Theoretical evaluation of two dimensional electron gas characteristics of quaternary AlxInyGa1–x–yN/GaN hetero-junctions Journal of Applied Physics. 119: 154502 |
| Loghmany A, Valizadeh P. (2015) Alternative isolation-feature geometries and polarization-engineering of polar AlGaN/GaN HFETs Solid-State Electronics. 103: 162-166 |
| Manouchehri F, Valizadeh P, Kabir MZ. (2014) Determination of subband energies and 2DEG characteristics of AlxGa1−xN/GaN heterojunctions using variational method Journal of Vacuum Science and Technology. 32: 21104 |
| Manouchehri F, Valizadeh P, Kabir MZ. (2014) Physics-based analysis of low frequency drain noise-current in AlxGa1−xN/GaN HFETs Journal of Physics D. 47: 85104 |
| Sikder J, Valizadeh P. (2013) Scalability of the drain-current drive of AlGaN/GaN HFETs with gate-length Solid-State Electronics. 89: 105-110 |
| Manouchehri F, Valizadeh P, Kabir MZ. (2013) Temperature-dependent investigation of low frequency noise characteristics of mesa-, fin-, and island-isolated AlGaN/GaN HFETs Solid-State Electronics. 89: 1-6 |