Leonard Forbes
Affiliations: | Oregon State University, Corvallis, OR |
Area:
Electronics and Electrical EngineeringGoogle:
"Leonard Forbes"Children
Sign in to add trainee| Chengwei Zhang | grad student | 2004 | Oregon State |
| Drake A. Miller | grad student | 2011 | Oregon State |
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Publications
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| Forbes L, Miller DA. (2009) Characterization of single electron effects in nanoscale mosfets Proceedings of Spie - the International Society For Optical Engineering. 7402 |
| Forbes L, Miller DA, Jacob ME. (2008) Low Capacitance Electrical Probe for Nanoscale Devices and Circuits The Open Nanoscience Journal. 2: 39-42 |
| Louie MY, Miller DA, Jacob ME, et al. (2005) Long term transients in MOSFET 1/f noise under switched bias conditions Device Research Conference - Conference Digest, Drc. 2005: 79-80 |
| Forbes L, Zhang C, Zhang B, et al. (2003) Comparison of phase noise simulation techniques on a BJT LC oscillator. Ieee Transactions On Ultrasonics, Ferroelectrics, and Frequency Control. 50: 716-9 |
| Forbes L, Zhang C, Zhang B. (2002) Experimental verification of the dependence of bipolar transistor flicker noise on power dissipation Ieee Transactions On Electron Devices. 49: 945-947 |
| Xie D, Forbes L. (2000) Phase noise on a 2-GHz CMOS LC oscillator Ieee Transactions On Computer-Aided Design of Integrated Circuits and Systems. 19: 773-778 |
| Forbes L, Cheng M, Zhou J. (2000) Simulation of phase noise generated by white noise in 1.7 GHz CMOS LC oscillator Electronics Letters. 36: 1909 |
| Forbes L, Yan K, Taylor S. (1999) A model for the channel noise of MESFETs including hot electron effects Microelectronics Reliability. 39: 1773-1786 |
| Forbes L, Choi MS, Cao W. (1999) 1/f noise due to temperature fluctuations in heat conduction in bipolar transistors Microelectronics Reliability. 39: 1357-1364 |
| Forbes L, Choi MS, Yan KT. (1996) 1/f Noise of GaAs resistors on semi-insulating substrates Ieee Transactions On Electron Devices. 43: 622-627 |