Nathaniel J. Quitoriano
Affiliations: | 2000-2006 | Materials Science and Engineering | Massachusetts Institute of Technology, Cambridge, MA, United States |
Google:
"Nathaniel Quitoriano"
BETA: Related publications
See more...
Publications
|
You can help our author matching system! If you notice any publications incorrectly attributed to this author, please sign in and mark matches as correct or incorrect. |
| Suwito GR, Dubrovskii VG, Zhang Z, et al. (2023) Tuning the Liquid-Vapour Interface of VLS Epitaxy for Creating Novel Semiconductor Nanostructures. Nanomaterials (Basel, Switzerland). 13 |
| Wang W, Quitoriano NJ. (2020) Transmission electron microscopy dislocation study of Ge-on-Si films supporting a new lattice-mismatch relaxation mechanism Journal of Applied Physics. 127: 75301 |
| Wang W, Quitoriano NJ. (2020) Growth Conditions of Metal-catalyzed, Laterally Grown Ge Films on Si Thin Solid Films. 709: 138133 |
| Wang J, Heidelberger C, Fitzgerald EA, et al. (2020) Liquid phase epitaxy SiGe films on a CVD-grown SiGe/Si (0 0 1) graded film Journal of Crystal Growth. 535: 125541 |
| Wang H, Yasin A, Quitoriano NJ, et al. (2019) Aqueous-based Binary Sulfide Nanoparticle Inks for CuZnSnS Thin Films Stabilized with Tin(IV) Chalcogenide Complexes. Nanomaterials (Basel, Switzerland). 9 |
| Wang W, Quitoriano NJ. (2019) New Relaxation Mechanism Enabling High-Quality, Laterally Grown Ge on Si Crystal Growth & Design. 19: 23-29 |
| Wang J, Quitoriano NJ. (2019) SiGe films and graded buffers grown by liquid phase epitaxy from different growth solution compositions Journal of Crystal Growth. 510: 65-75 |
| Wang J, Shen Y, Quitoriano N. (2018) Growth evolution of SiGe graded buffers during LPE cooling process Journal of Crystal Growth. 502: 54-63 |
| O'Reilly AJ, Quitoriano NJ. (2018) Reduction of threading dislocation density in SiGe epilayer on Si (0 0 1) by lateral growth liquid-phase epitaxy Journal of Crystal Growth. 483: 223-227 |
| O'Reilly AJ, Quitoriano N. (2018) Asymmetric, compressive, SiGe epilayers on Si grown by lateral liquid-phase epitaxy utilizing a distinction between dislocation nucleation and glide critical thicknesses Journal of Crystal Growth. 482: 15-22 |