Year |
Citation |
Score |
2023 |
Suwito GR, Dubrovskii VG, Zhang Z, Wang W, Haffouz S, Dalacu D, Poole PJ, Grutter P, Quitoriano NJ. Tuning the Liquid-Vapour Interface of VLS Epitaxy for Creating Novel Semiconductor Nanostructures. Nanomaterials (Basel, Switzerland). 13. PMID 36903772 DOI: 10.3390/nano13050894 |
0.37 |
|
2020 |
Wang W, Quitoriano NJ. Transmission electron microscopy dislocation study of Ge-on-Si films supporting a new lattice-mismatch relaxation mechanism Journal of Applied Physics. 127: 75301. DOI: 10.1063/1.5113875 |
0.465 |
|
2020 |
Wang W, Quitoriano NJ. Growth Conditions of Metal-catalyzed, Laterally Grown Ge Films on Si Thin Solid Films. 709: 138133. DOI: 10.1016/J.Tsf.2020.138133 |
0.449 |
|
2020 |
Wang J, Heidelberger C, Fitzgerald EA, Quitoriano NJ. Liquid phase epitaxy SiGe films on a CVD-grown SiGe/Si (0 0 1) graded film Journal of Crystal Growth. 535: 125541. DOI: 10.1016/J.Jcrysgro.2020.125541 |
0.578 |
|
2019 |
Wang H, Yasin A, Quitoriano NJ, Demopoulos GP. Aqueous-based Binary Sulfide Nanoparticle Inks for CuZnSnS Thin Films Stabilized with Tin(IV) Chalcogenide Complexes. Nanomaterials (Basel, Switzerland). 9. PMID 31561636 DOI: 10.3390/Nano9101382 |
0.368 |
|
2019 |
Wang W, Quitoriano NJ. New Relaxation Mechanism Enabling High-Quality, Laterally Grown Ge on Si Crystal Growth & Design. 19: 23-29. DOI: 10.1021/Acs.Cgd.8B01329 |
0.514 |
|
2019 |
Wang J, Quitoriano NJ. SiGe films and graded buffers grown by liquid phase epitaxy from different growth solution compositions Journal of Crystal Growth. 510: 65-75. DOI: 10.1016/J.Jcrysgro.2019.01.014 |
0.49 |
|
2018 |
Wang J, Shen Y, Quitoriano N. Growth evolution of SiGe graded buffers during LPE cooling process Journal of Crystal Growth. 502: 54-63. DOI: 10.1016/J.Jcrysgro.2018.08.026 |
0.486 |
|
2018 |
O'Reilly AJ, Quitoriano NJ. Reduction of threading dislocation density in SiGe epilayer on Si (0 0 1) by lateral growth liquid-phase epitaxy Journal of Crystal Growth. 483: 223-227. DOI: 10.1016/J.Jcrysgro.2017.12.010 |
0.482 |
|
2018 |
O'Reilly AJ, Quitoriano N. Asymmetric, compressive, SiGe epilayers on Si grown by lateral liquid-phase epitaxy utilizing a distinction between dislocation nucleation and glide critical thicknesses Journal of Crystal Growth. 482: 15-22. DOI: 10.1016/J.Jcrysgro.2017.10.038 |
0.463 |
|
2015 |
Soubane D, Quitoriano NJ. Photoluminescence from low thermal budget silicon nano-crystals in silica Nanotechnology. 26: 295201. PMID 26134410 DOI: 10.1088/0957-4484/26/29/295201 |
0.487 |
|
2014 |
LeBoeuf JL, Brodusch N, Gauvin R, Quitoriano NJ. Preferred orientations of laterally grown silicon films over amorphous substrates using the vapor–liquid–solid technique Journal of Applied Physics. 116: 244308. DOI: 10.1063/1.4904198 |
0.424 |
|
2014 |
LeBoeuf JL, Quitoriano NJ. Nucleation and solidification of laterally grown silicon micro-films on amorphous substrates using the VLS mechanism Journal of Crystal Growth. 391: 1-6. DOI: 10.1016/J.Jcrysgro.2013.12.043 |
0.467 |
|
2013 |
Quitoriano NJ, Sanderson RN, Bae SS, Ragan R. Interpreting Kelvin probe force microscopy under an applied electric field: Local electronic behavior of vapor-liquid-solid Si nanowires Nanotechnology. 24. DOI: 10.1088/0957-4484/24/20/205704 |
0.368 |
|
2013 |
O'Reilly A, Kuan M, Quitoriano N. PH dependant sticking probability of gold colloid on silicon Colloids and Surfaces a: Physicochemical and Engineering Aspects. 436: 130-132. DOI: 10.1016/J.Colsurfa.2013.06.025 |
0.336 |
|
2012 |
Horth A, Quitoriano NJ. Novel, low-index waveguide as laser external cavity. Optics Express. 20: 11137-11142. PMID 22565736 DOI: 10.1364/Oe.20.011137 |
0.314 |
|
2012 |
O'Reilly AJ, Francis C, Quitoriano NJ. Gold nanoparticle deposition on Si by destabilising gold colloid with HF. Journal of Colloid and Interface Science. 370: 46-50. PMID 22261274 DOI: 10.1016/J.Jcis.2011.12.012 |
0.341 |
|
2011 |
Quitoriano NJ, Kamins TI. Lateral, Ge, nanowire growth on SiO2 Nanotechnology. 22: 65201. PMID 21212486 DOI: 10.1088/0957-4484/22/6/065201 |
0.47 |
|
2009 |
Quitoriano NJ, Wu W, Kamins TI. Guiding vapor-liquid-solid nanowire growth using SiO2. Nanotechnology. 20: 145303. PMID 19420522 DOI: 10.1088/0957-4484/20/14/145303 |
0.436 |
|
2009 |
Quitoriano NJ, Belov M, Evoy S, Kamins TI. Single-crystal, Si nanotubes, and their mechanical resonant properties. Nano Letters. 9: 1511-6. PMID 19271766 DOI: 10.1021/Nl803565Q |
0.444 |
|
2008 |
Quitoriano NJ, Kamins TI. Integratable Nanowire Transistors Nano Letters. 8: 4410-4414. PMID 19367850 DOI: 10.1021/Nl802292H |
0.382 |
|
2007 |
Quitoriano NJ, Kamins TI. Using pn junction depletion regions to position epitaxial nanowires Journal of Applied Physics. 102: 44311. DOI: 10.1063/1.2770820 |
0.371 |
|
2007 |
Quitoriano NJ, Fitzgerald EA. Relaxed, high-quality InP on GaAs by using InGaAs and InGaP graded buffers to avoid phase separation Journal of Applied Physics. 102. DOI: 10.1063/1.2764204 |
0.514 |
|
2007 |
Quitoriano NJ, Fitzgerald EA. Alternative slip system activation in lattice-mismatched InP/InGaAs interfaces Journal of Applied Physics. 101. DOI: 10.1063/1.2717156 |
0.489 |
|
1999 |
Wong WS, Wengrow AB, Cho Y, Salleo A, Quitoriano NJ, Cheung NW, Sands T. Integration of GaN thin films with dissimilar substrate materials by Pd-In metal bonding and laser lift-off Journal of Electronic Materials. 28: 1409-1413. DOI: 10.1007/S11664-999-0131-X |
0.381 |
|
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