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Nathaniel J. Quitoriano - Publications

Affiliations: 
2000-2006 Materials Science and Engineering Massachusetts Institute of Technology, Cambridge, MA, United States 
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25 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2023 Suwito GR, Dubrovskii VG, Zhang Z, Wang W, Haffouz S, Dalacu D, Poole PJ, Grutter P, Quitoriano NJ. Tuning the Liquid-Vapour Interface of VLS Epitaxy for Creating Novel Semiconductor Nanostructures. Nanomaterials (Basel, Switzerland). 13. PMID 36903772 DOI: 10.3390/nano13050894  0.37
2020 Wang W, Quitoriano NJ. Transmission electron microscopy dislocation study of Ge-on-Si films supporting a new lattice-mismatch relaxation mechanism Journal of Applied Physics. 127: 75301. DOI: 10.1063/1.5113875  0.465
2020 Wang W, Quitoriano NJ. Growth Conditions of Metal-catalyzed, Laterally Grown Ge Films on Si Thin Solid Films. 709: 138133. DOI: 10.1016/J.Tsf.2020.138133  0.449
2020 Wang J, Heidelberger C, Fitzgerald EA, Quitoriano NJ. Liquid phase epitaxy SiGe films on a CVD-grown SiGe/Si (0 0 1) graded film Journal of Crystal Growth. 535: 125541. DOI: 10.1016/J.Jcrysgro.2020.125541  0.578
2019 Wang H, Yasin A, Quitoriano NJ, Demopoulos GP. Aqueous-based Binary Sulfide Nanoparticle Inks for CuZnSnS Thin Films Stabilized with Tin(IV) Chalcogenide Complexes. Nanomaterials (Basel, Switzerland). 9. PMID 31561636 DOI: 10.3390/Nano9101382  0.368
2019 Wang W, Quitoriano NJ. New Relaxation Mechanism Enabling High-Quality, Laterally Grown Ge on Si Crystal Growth & Design. 19: 23-29. DOI: 10.1021/Acs.Cgd.8B01329  0.514
2019 Wang J, Quitoriano NJ. SiGe films and graded buffers grown by liquid phase epitaxy from different growth solution compositions Journal of Crystal Growth. 510: 65-75. DOI: 10.1016/J.Jcrysgro.2019.01.014  0.49
2018 Wang J, Shen Y, Quitoriano N. Growth evolution of SiGe graded buffers during LPE cooling process Journal of Crystal Growth. 502: 54-63. DOI: 10.1016/J.Jcrysgro.2018.08.026  0.486
2018 O'Reilly AJ, Quitoriano NJ. Reduction of threading dislocation density in SiGe epilayer on Si (0 0 1) by lateral growth liquid-phase epitaxy Journal of Crystal Growth. 483: 223-227. DOI: 10.1016/J.Jcrysgro.2017.12.010  0.482
2018 O'Reilly AJ, Quitoriano N. Asymmetric, compressive, SiGe epilayers on Si grown by lateral liquid-phase epitaxy utilizing a distinction between dislocation nucleation and glide critical thicknesses Journal of Crystal Growth. 482: 15-22. DOI: 10.1016/J.Jcrysgro.2017.10.038  0.463
2015 Soubane D, Quitoriano NJ. Photoluminescence from low thermal budget silicon nano-crystals in silica Nanotechnology. 26: 295201. PMID 26134410 DOI: 10.1088/0957-4484/26/29/295201  0.487
2014 LeBoeuf JL, Brodusch N, Gauvin R, Quitoriano NJ. Preferred orientations of laterally grown silicon films over amorphous substrates using the vapor–liquid–solid technique Journal of Applied Physics. 116: 244308. DOI: 10.1063/1.4904198  0.424
2014 LeBoeuf JL, Quitoriano NJ. Nucleation and solidification of laterally grown silicon micro-films on amorphous substrates using the VLS mechanism Journal of Crystal Growth. 391: 1-6. DOI: 10.1016/J.Jcrysgro.2013.12.043  0.467
2013 Quitoriano NJ, Sanderson RN, Bae SS, Ragan R. Interpreting Kelvin probe force microscopy under an applied electric field: Local electronic behavior of vapor-liquid-solid Si nanowires Nanotechnology. 24. DOI: 10.1088/0957-4484/24/20/205704  0.368
2013 O'Reilly A, Kuan M, Quitoriano N. PH dependant sticking probability of gold colloid on silicon Colloids and Surfaces a: Physicochemical and Engineering Aspects. 436: 130-132. DOI: 10.1016/J.Colsurfa.2013.06.025  0.336
2012 Horth A, Quitoriano NJ. Novel, low-index waveguide as laser external cavity. Optics Express. 20: 11137-11142. PMID 22565736 DOI: 10.1364/Oe.20.011137  0.314
2012 O'Reilly AJ, Francis C, Quitoriano NJ. Gold nanoparticle deposition on Si by destabilising gold colloid with HF. Journal of Colloid and Interface Science. 370: 46-50. PMID 22261274 DOI: 10.1016/J.Jcis.2011.12.012  0.341
2011 Quitoriano NJ, Kamins TI. Lateral, Ge, nanowire growth on SiO2 Nanotechnology. 22: 65201. PMID 21212486 DOI: 10.1088/0957-4484/22/6/065201  0.47
2009 Quitoriano NJ, Wu W, Kamins TI. Guiding vapor-liquid-solid nanowire growth using SiO2. Nanotechnology. 20: 145303. PMID 19420522 DOI: 10.1088/0957-4484/20/14/145303  0.436
2009 Quitoriano NJ, Belov M, Evoy S, Kamins TI. Single-crystal, Si nanotubes, and their mechanical resonant properties. Nano Letters. 9: 1511-6. PMID 19271766 DOI: 10.1021/Nl803565Q  0.444
2008 Quitoriano NJ, Kamins TI. Integratable Nanowire Transistors Nano Letters. 8: 4410-4414. PMID 19367850 DOI: 10.1021/Nl802292H  0.382
2007 Quitoriano NJ, Kamins TI. Using pn junction depletion regions to position epitaxial nanowires Journal of Applied Physics. 102: 44311. DOI: 10.1063/1.2770820  0.371
2007 Quitoriano NJ, Fitzgerald EA. Relaxed, high-quality InP on GaAs by using InGaAs and InGaP graded buffers to avoid phase separation Journal of Applied Physics. 102. DOI: 10.1063/1.2764204  0.514
2007 Quitoriano NJ, Fitzgerald EA. Alternative slip system activation in lattice-mismatched InP/InGaAs interfaces Journal of Applied Physics. 101. DOI: 10.1063/1.2717156  0.489
1999 Wong WS, Wengrow AB, Cho Y, Salleo A, Quitoriano NJ, Cheung NW, Sands T. Integration of GaN thin films with dissimilar substrate materials by Pd-In metal bonding and laser lift-off Journal of Electronic Materials. 28: 1409-1413. DOI: 10.1007/S11664-999-0131-X  0.381
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