Year |
Citation |
Score |
2012 |
Volksen W, Purushothaman S, Darnon M, Lofaro MF, Cohen SA, Doyle JP, Fuller N, Magbitang TP, Rice PM, Krupp LE, Nakagawa H, Nobe Y, Kokubo T, Duboisa GJM. Integration of a manufacturing grade, k = 2.0 spin-on material in a single damascene structure Ecs Journal of Solid State Science and Technology. 1. DOI: 10.1149/2.013205Jss |
0.341 |
|
2012 |
Shohet JL, Ren H, Nichols MT, Sinha H, Lu W, Mavrakakis K, Lin Q, Russell NM, Tomoyasu M, Antonelli GA, Engelmann SU, Fuller NC, Ryan V, Nishi Y. The effects of plasma exposure on low-k dielectric materials Proceedings of Spie - the International Society For Optical Engineering. 8328. DOI: 10.1117/12.917967 |
0.345 |
|
2012 |
Tsai HY, Miyazoe H, Engelmann S, To B, Sikorski E, Bucchignano J, Klaus D, Liu CC, Cheng J, Sanders D, Fuller N, Guillorn M. Sub-30 nm pitch line-space patterning of semiconductor and dielectric materials using directed self-assembly Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 30. DOI: 10.1116/1.4767237 |
0.337 |
|
2012 |
Sinha H, Ren H, Nichols MT, Lauer JL, Tomoyasu M, Russell NM, Jiang G, Antonelli GA, Fuller NC, Engelmann SU, Lin Q, Ryan V, Nishi Y, Shohet JL. The effects of vacuum ultraviolet radiation on low-k dielectric films Journal of Applied Physics. 112. DOI: 10.1063/1.4751317 |
0.309 |
|
2010 |
Lin Q, Chen ST, Nelson A, Brock P, Cohen S, Davis B, Fuller N, Kaplan R, Kwong R, Liniger E, Neumayer D, Patel J, Shobha H, Sooriyakumaran R, Purushothaman S, et al. Multi-level integration of patternable low-κ material into advanced Cu BEOL Proceedings of Spie - the International Society For Optical Engineering. 7639. DOI: 10.1117/12.851225 |
0.328 |
|
2009 |
Guillorn M, Chang J, Fuller N, Patel J, Darnon M, Pyzyna A, Joseph E, Engelmann S, Ott J, Newbury J, Klaus D, Bucchignano J, Joshi P, Scerbo C, Kratschmer E, et al. Hydrogen silsesquioxane-based hybrid electron beam and optical lithography for high density circuit prototyping Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 27: 2588-2592. DOI: 10.1116/1.3246357 |
0.327 |
|
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