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He Ren, Ph.D. - Publications

Affiliations: 
2011 University of Wisconsin, Madison, Madison, WI 
Area:
Electronics and Electrical Engineering
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12 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2014 Hsu KW, Ren H, Agasie RJ, Bian S, Nishi Y, Shohet JL. Effects of neutron irradiation of ultra-thin HfO2 films Applied Physics Letters. 104. DOI: 10.1063/1.4863222  0.53
2012 Shohet JL, Ren H, Nichols MT, Sinha H, Lu W, Mavrakakis K, Lin Q, Russell NM, Tomoyasu M, Antonelli GA, Engelmann SU, Fuller NC, Ryan V, Nishi Y. The effects of plasma exposure on low-k dielectric materials Proceedings of Spie - the International Society For Optical Engineering. 8328. DOI: 10.1117/12.917967  0.577
2012 Sinha H, Ren H, Nichols MT, Lauer JL, Tomoyasu M, Russell NM, Jiang G, Antonelli GA, Fuller NC, Engelmann SU, Lin Q, Ryan V, Nishi Y, Shohet JL. The effects of vacuum ultraviolet radiation on low-k dielectric films Journal of Applied Physics. 112. DOI: 10.1063/1.4751317  0.599
2011 Ren H, Nishi Y, Shohet JL. Changes to charge and defects in dielectrics from ion and photon fluences during plasma exposure Electrochemical and Solid-State Letters. 14. DOI: 10.1149/1.3524403  0.58
2011 Shohet JL, Sinha H, Ren H, Nichols MT, Nishi Y, Tomoyasu M, Russell NM. Damage to low-k porous organosilicate glass from vacuum-ultraviolet irradiation Proceedings of Spie - the International Society For Optical Engineering. 8077. DOI: 10.1117/12.887691  0.628
2011 Ren H, Jiang G, Antonelli GA, Nishi Y, Shohet JL. The nature of the defects generated from plasma exposure in pristine and ultraviolet-cured low-k organosilicate glass Applied Physics Letters. 98. DOI: 10.1063/1.3601922  0.56
2011 Ren H, Nichols MT, Jiang G, Antonelli GA, Nishi Y, Shohet JL. Defects in low- k organosilicate glass and their response to processing as measured with electron-spin resonance Applied Physics Letters. 98. DOI: 10.1063/1.3562307  0.578
2011 Sinha H, Sehgal A, Ren H, Nichols MT, Tomoyasu M, Russell NM, Nishi Y, Shohet JL. Effect of the dielectric-substrate interface on charge accumulation from vacuum ultraviolet irradiation of low-k porous organosilicate dielectrics Thin Solid Films. 519: 5464-5466. DOI: 10.1016/J.Tsf.2011.03.010  0.58
2010 Ren H, Antonelli GA, Nishi Y, Shohet JL. Plasma damage effects on low- k porous organosilicate glass Journal of Applied Physics. 108. DOI: 10.1063/1.3506523  0.616
2010 Ren H, Sinha H, Sehgal A, Nichols MT, Antonelli GA, Nishi Y, Shohet JL. Surface potential due to charge accumulation during vacuum ultraviolet exposure for high-k and low-k dielectrics Applied Physics Letters. 97. DOI: 10.1063/1.3481079  0.574
2010 Ren H, Cheng SL, Nishi Y, Shohet JL. Effects of vacuum ultraviolet and ultraviolet irradiation on ultrathin hafnium-oxide dielectric layers on (100)Si as measured with electron-spin resonance Applied Physics Letters. 96. DOI: 10.1063/1.3430570  0.55
2010 Sinha H, Ren H, Sehgal A, Antonelli GA, Nishi Y, Shohet JL. Numerical simulation of vacuum-ultraviolet irradiation of dielectric layers Applied Physics Letters. 96. DOI: 10.1063/1.3386531  0.536
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