Anisur Rahman, Ph.D. - Publications

2005 Purdue University, West Lafayette, IN, United States 
Electronics and Electrical Engineering

8 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2015 Rahman A, Lundstrom MS. Erratum: A Compact Scattering Model for the Nanoscale Double-Gate MOSFET [Mar 02 481-489] Ieee Transactions On Electron Devices. 62: 2367-2367. DOI: 10.1109/Ted.2015.2437276  0.491
2005 Rahman A, Klimeck G, Lundstrom M, Boykin TB, Vagidov N. Atomistic Approach for Nanoscale Devices at the Scaling Limit and Beyond– Valley Splitting in Si Japanese Journal of Applied Physics. 44: 2187-2190. DOI: 10.1143/Jjap.44.2187  0.518
2005 Wang J, Rahman A, Ghosh A, Klimeck G, Lundstrom M. On the Validity of the Parabolic Effective-Mass Approximation for the I–V Calculation of Silicon Nanowire Transistors Ieee Transactions On Electron Devices. 52: 1589-1595. DOI: 10.1109/Ted.2005.850945  0.5
2005 Wang J, Rahman A, Ghosh A, Klimeck G, Lundstrom M. Performance evaluation of ballistic silicon nanowire transistors with atomic-basis dispersion relations Applied Physics Letters. 86: 093113. DOI: 10.1063/1.1873055  0.511
2005 Rahman A, Lundstrom MS, Ghosh AW. Generalized effective-mass approach for n -type metal-oxide-semiconductor field-effect transistors on arbitrarily oriented wafers Journal of Applied Physics. 97. DOI: 10.1063/1.1845586  0.508
2004 Rahman A, Klimeck G, Vagidov N, Boykin TB, Lundstrom M. Nanoscale Device Simulation at the Scaling Limit and Beyond The Japan Society of Applied Physics. 2004: 726-727. DOI: 10.7567/Ssdm.2004.A-9-1  0.471
2003 Rahman A, Guo J, Datta S, Lundstrom MS. Theory of ballistic nanotransistors Ieee Transactions On Electron Devices. 50: 1853-1864. DOI: 10.1109/Ted.2003.815366  0.509
2002 Rahman A, Lundstrom MS. A compact scattering model for the nanoscale double-gate MOSFET Ieee Transactions On Electron Devices. 49: 481-489. DOI: 10.1109/16.987120  0.52
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