Anisur Rahman, Ph.D.

2005 Purdue University, West Lafayette, IN, United States 
Electronics and Electrical Engineering
"Anisur Rahman"


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Mark S. Lundstrom grad student 2005 Purdue
 (Exploring new channel materials for nanoscale CMOS devices: A simulation approach.)
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Rahman A, Lundstrom MS. (2015) Erratum: A Compact Scattering Model for the Nanoscale Double-Gate MOSFET [Mar 02 481-489] Ieee Transactions On Electron Devices. 62: 2367-2367
Rahman A, Klimeck G, Lundstrom M, et al. (2005) Atomistic Approach for Nanoscale Devices at the Scaling Limit and Beyond– Valley Splitting in Si Japanese Journal of Applied Physics. 44: 2187-2190
Wang J, Rahman A, Ghosh A, et al. (2005) On the Validity of the Parabolic Effective-Mass Approximation for the I–V Calculation of Silicon Nanowire Transistors Ieee Transactions On Electron Devices. 52: 1589-1595
Wang J, Rahman A, Ghosh A, et al. (2005) Performance evaluation of ballistic silicon nanowire transistors with atomic-basis dispersion relations Applied Physics Letters. 86: 093113
Rahman A, Lundstrom MS, Ghosh AW. (2005) Generalized effective-mass approach for n -type metal-oxide-semiconductor field-effect transistors on arbitrarily oriented wafers Journal of Applied Physics. 97
Rahman A, Klimeck G, Vagidov N, et al. (2004) Nanoscale Device Simulation at the Scaling Limit and Beyond The Japan Society of Applied Physics. 2004: 726-727
Rahman A, Guo J, Datta S, et al. (2003) Theory of ballistic nanotransistors Ieee Transactions On Electron Devices. 50: 1853-1864
Rahman A, Lundstrom MS. (2002) A compact scattering model for the nanoscale double-gate MOSFET Ieee Transactions On Electron Devices. 49: 481-489
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