Dawei Ren, Ph.D. - Publications
Affiliations: | 2004 | University of Southern California, Los Angeles, CA, United States |
Area:
Materials Science EngineeringYear | Citation | Score | |||
---|---|---|---|---|---|
2006 | Zhou W, Ren D, Dapkus PD. Transmission electron microscopy study of defect reduction in two-step lateral epitaxial overgrown nonplanar GaN substrate templates Journal of Crystal Growth. 290: 11-17. DOI: 10.1016/J.Jcrysgro.2005.12.108 | 0.535 | |||
2005 | Ren D, Dapkus PD. Anisotropic Mg incorporation in GaN growth on nonplanar templates Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1870121 | 0.487 | |||
2005 | Ren D, Zhou W, Dapkus PD. Low-dislocation-density, nonplanar GaN templates for buried heterostructure lasers grown by lateral epitaxial overgrowth Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1866502 | 0.518 | |||
2005 | Zhou W, Ren D, Dapkus PD. Three-dimensional microstructural characterization of GaN nonplanar substrate laterally epitaxially overgrown by metalorganic chemical vapor deposition Journal of Crystal Growth. 283: 31-40. DOI: 10.1016/J.Jcrysgro.2005.05.046 | 0.526 | |||
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