Year |
Citation |
Score |
2015 |
Hruszkewycz SO, Holt MV, Allain M, Chamard V, Polvino SM, Murray CE, Fuoss PH. Efficient modeling of Bragg coherent x-ray nanobeam diffraction. Optics Letters. 40: 3241-4. PMID 26176439 DOI: 10.1364/Ol.40.003241 |
0.317 |
|
2013 |
Murray CE, Polvino SM, Noyan IC, Cai Z, Maser J, Holt M. Probing strain at the nanoscale with X-ray diffraction in microelectronic materials induced by stressor elements Thin Solid Films. 530: 85-90. DOI: 10.1016/J.Tsf.2012.05.043 |
0.728 |
|
2011 |
Murray CE, Ying A, Polvino SM, Noyan IC, Holt M, Maser J. Nanoscale silicon-on-insulator deformation induced by stressed liner structures Journal of Applied Physics. 109. DOI: 10.1063/1.3579421 |
0.736 |
|
2010 |
Murray CE, Ying AJ, Polvino SM, Noyan IC, Cai Z. Nanoscale strain characterization in microelectronic materials using X-ray diffraction Powder Diffraction. 25: 108-113. DOI: 10.1154/1.3394205 |
0.715 |
|
2009 |
Murray CE, Ren Z, Ying A, Polvino SM, Noyan IC, Cai Z. Strain measured in a silicon-on-insulator, complementary metal-oxide-semiconductor device channel induced by embedded silicon-carbon source/drain regions Applied Physics Letters. 94. DOI: 10.1063/1.3079656 |
0.667 |
|
2008 |
Murray CE, Polvino SM, Noyan IC, Lai B, Cai Z. Real-space strain mapping of SOI features using microbeam X-ray diffraction Powder Diffraction. 23: 106-108. DOI: 10.1154/1.2912329 |
0.717 |
|
2008 |
Murray CE, Saenger KL, Kalenci O, Polvino SM, Noyan IC, Lai B, Cai Z. Submicron mapping of silicon-on-insulator strain distributions induced by stressed liner structures Journal of Applied Physics. 104. DOI: 10.1063/1.2952044 |
0.588 |
|
2008 |
Polvino SM, Murray CE, Kalenci O, Noyan IC, Lai B, Cai Z. Synchrotron microbeam x-ray radiation damage in semiconductor layers Applied Physics Letters. 92. DOI: 10.1063/1.2942380 |
0.545 |
|
2007 |
Murray CE, Sankarapandian M, Polvino SM, Noyan IC, Lai B, Cai Z. Submicron mapping of strained silicon-on-insulator features induced by shallow-trench-isolation structures Applied Physics Letters. 90. DOI: 10.1063/1.2732180 |
0.707 |
|
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