☰

Ning Duan, D.Eng. - Publications

Affiliations: 
2006 Electrical Engineering University of Texas at Austin, Austin, Texas, U.S.A. 
Area:
Electronics and Electrical Engineering
Tree Info Similar researchers PubMed Report error

11 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2012 Duan N, Liow TY, Lim AE, Ding L, Lo GQ. 310 GHz gain-bandwidth product Ge/Si avalanche photodetector for 1550 nm light detection. Optics Express. 20: 11031-6. PMID 22565725  0.302
2007 Wang X, Duan N, Chen H, Campbell JC. InGaAs–InP Photodiodes With High Responsivity and High Saturation Power Ieee Photonics Technology Letters. 19: 1272-1274. DOI: 10.1109/Lpt.2007.902274  0.527
2006 Guo X, Beck AL, Huang Z, Duan N, Campbell JC, Emerson D, Sumakeris JJ. Performance of low-dark-current 4H-SiC avalanche photodiodes with thin multiplication layer Ieee Transactions On Electron Devices. 53: 2259-2264. DOI: 10.1109/Ted.2006.879677  0.601
2006 Li N, Chen H, Duan N, Liu M, Demiguel S, Sidhu R, Holmes AL, Campbell JC. High power photodiode wafer bonded to si using au with improved responsivity and output power Ieee Photonics Technology Letters. 18: 2526-2528. DOI: 10.1109/Lpt.2006.887209  0.484
2006 Huang Z, Kong N, Guo X, Liu M, Duan N, Beck AL, Banerjee SK, Campbell JC. 21-GHz-bandwidth germanium-on-silicon photodiode using thin SiGe buffer layers Ieee Journal On Selected Topics in Quantum Electronics. 12: 1450-1453. DOI: 10.1109/Jstqe.2006.884073  0.583
2006 Duan N, Wang X, Li N, Liu H, Campbell JC. Thermal Analysis of High-Power InGaAs–InP Photodiodes Ieee Journal of Quantum Electronics. 42: 1255-1258. DOI: 10.1109/Jqe.2006.883498  0.484
2006 Sidhu R, Zhang L, Tan N, Duan N, Campbell JC, Holmes AL, Hsu CF, Itzler MA. 2.4 μm cutoff wavelength avalanche photodiode on InP substrate Electronics Letters. 42: 71-72. DOI: 10.1049/El:20063415  0.469
2005 Sidhu R, Duan N, Campbell JC, Holmes AL. A long-wavelength photodiode on InP using lattice-matched GaInAs-GaAsSb type-II quantum wells Ieee Photonics Technology Letters. 17: 2715-2717. DOI: 10.1109/Lpt.2005.859163  0.464
2005 Duan N, Wang S, Ma F, Li N, Campbell JC, Wang C, Coldren LA. High-speed and low-noise SACM avalanche photodiodes with an impact-ionization-engineered multiplication region Ieee Photonics Technology Letters. 17: 1719-1721. DOI: 10.1109/Lpt.2005.851903  0.546
2005 Duan N, Wang S, Zheng XG, Li X, Li N, Campbell JC, Wang C, Coldren LA. Detrimental effect of impact ionization in the absorption region on the frequency response and excess noise performance of InGaAs-InAlAs SACM avalanche photodiodes Ieee Journal of Quantum Electronics. 41: 568-572. DOI: 10.1109/Jqe.2005.843613  0.478
2004 Sidhu R, Chen H, Duan N, Karve GV, Campbell JC, Holmes AL. GaAsSb resonant-cavity enhanced avalanche photodiode operating at 1.06 μm Electronics Letters. 40: 1296-1297. DOI: 10.1049/El:20046147  0.497
Show low-probability matches.