Year |
Citation |
Score |
2020 |
Kilic U, Mock A, Sekora D, Gilbert S, Valloppilly S, Ianno N, Langell M, Schubert E, Schubert M. Precursor-surface interactions revealed during plasma-enhanced atomic layer deposition of metal oxide thin films by in-situ spectroscopic ellipsometry. Scientific Reports. 10: 10392. PMID 32587273 DOI: 10.1038/S41598-020-66409-8 |
0.433 |
|
2018 |
Exstrom CL, Darveau SA, Falconer ME, Blum JR, Colling WM, Ianno NJ. Non-vacuum Preparation of wse2 Thin Films via the Selenization of Hydrated Tungsten Oxide Prepared using Chemical Solution Methods Mrs Advances. 3: 3281-3286. DOI: 10.1557/Adv.2018.451 |
0.426 |
|
2018 |
Peterson GG, Su Q, Wang Y, Ianno NJ, Dowben PA, Nastasi M. Improved a -B 10 C 2+x H y /Si p-n heterojunction performance after neutron irradiation Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 36: 11207. DOI: 10.1116/1.5008999 |
0.331 |
|
2018 |
Kılıç U, Sekora D, Mock A, Korlacki R, Valloppilly S, Echeverría EM, Ianno N, Schubert E, Schubert M. Critical-point model dielectric function analysis of WO3 thin films deposited by atomic layer deposition techniques Journal of Applied Physics. 124: 115302. DOI: 10.1063/1.5038746 |
0.408 |
|
2018 |
Nastasi M, Peterson G, Su Q, Wang Y, Ianno NJ, Benker N, Echeverría E, Yost AJ, Kelber JA, Dong B, Dowben PA. Electrical and structural characterization of neutron irradiated amorphous boron carbide/silicon p-n heterojunctions Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 432: 48-54. DOI: 10.1016/J.Nimb.2018.07.006 |
0.366 |
|
2018 |
Artnak EJ, Biegalski SR, Landsberger S, Ianno NJ, Alexander D, Byers MF. Development of boron calibration via hybrid comparator method in prompt gamma activation analysis Journal of Radioanalytical and Nuclear Chemistry. 318: 271-277. DOI: 10.1007/S10967-018-6062-3 |
0.424 |
|
2016 |
Exstrom CL, Darveau SA, Edgar JS, Curry CJ, Hanrahan MP, Ma Q, Hilfiker M, Ediger A, Ianno NJ. A Low-Temperature Fabrication Method for WSe2 Films Grown from Nanocrystalline Precursors Mrs Advances. 1: 2821-2826. DOI: 10.1557/Adv.2016.437 |
0.506 |
|
2016 |
Peterson GG, Wang Y, Ianno NJ, Nastasi M. Modeling Changes in Measured Conductance of Thin Boron Carbide Semiconducting Films Under Irradiation Ieee Transactions On Nuclear Science. 63: 2815-2822. DOI: 10.1109/Tns.2016.2626268 |
0.425 |
|
2014 |
Hanrahan FZ, Ianno NJ. Relationship between photofixed, effluent, and bulk composition of several room-temperature-vulcanized materials Journal of Spacecraft and Rockets. 51: 978-982. DOI: 10.2514/1.A32714 |
0.523 |
|
2014 |
Ma Q, Kyureghian H, Banninga JD, Ianno NJ. Thin film wse2 for use as a photovoltaic absorber material Materials Research Society Symposium Proceedings. 1670. DOI: 10.1557/Opl.2014.739 |
0.5 |
|
2014 |
Pu J, Ianno NJ. Optical characterization of photofixed RTV effluent in an atomic oxygen atmosphere Proceedings of Spie - the International Society For Optical Engineering. 9196. DOI: 10.1117/12.2060872 |
0.394 |
|
2014 |
Kment S, Kmentova H, Sarkar A, Soukup RJ, Ianno NJ, Sekora D, Olejnicek J, Ksirova P, Krysa J, Remes Z, Hubicka Z. Epoxy catalyzed sol-gel method for pinhole-free pyrite FeS2 thin films Journal of Alloys and Compounds. 607: 169-176. DOI: 10.1016/J.Jallcom.2014.04.060 |
0.69 |
|
2013 |
Xiong W, Zhou YS, Jiang LJ, Sarkar A, Mahjouri-Samani M, Xie ZQ, Gao Y, Ianno NJ, Jiang L, Lu YF. Single-step formation of graphene on dielectric surfaces. Advanced Materials (Deerfield Beach, Fla.). 25: 630-4. PMID 23136061 DOI: 10.1002/Adma.201202840 |
0.559 |
|
2012 |
Slaymaker LE, Hoffman NM, Ingersoll MA, Jensen MR, Olejniček J, Exstrom CL, Darveau SA, Soukup RJ, Ianno NJ, Sarkar A, Kment S. Properties of CuIn 1-xGa xSe 2 films prepared by the rapid thermal annealing of spray-deposited CuIn 1-xGa xS 2and Se Materials Research Society Symposium Proceedings. 1324: 77-82. DOI: 10.1557/Opl.2011.1152 |
0.665 |
|
2012 |
Ianno NJ, Pu J, Zhou F. Volatile contaminant materials: Relationship between condensate, effluent and bulk composition Proceedings of Spie - the International Society For Optical Engineering. 8492. DOI: 10.1117/12.930497 |
0.507 |
|
2012 |
Huguenin-Love J, Soukup RJ, Ianno NJ, Lauer NT. Growth and characterization of silicon carbide thin films on silicon using a hollow cathode pulse sputtering technique Thin Solid Films. 520: 2395-2408. DOI: 10.1016/J.Tsf.2011.09.083 |
0.455 |
|
2011 |
Rodenhausen KB, Kasputis T, Pannier AK, Gerasimov JY, Lai RY, Solinsky M, Tiwald TE, Wang H, Sarkar A, Hofmann T, Ianno N, Schubert M. Combined optical and acoustical method for determination of thickness and porosity of transparent organic layers below the ultra-thin film limit. The Review of Scientific Instruments. 82: 103111. PMID 22047284 DOI: 10.1063/1.3653880 |
0.629 |
|
2011 |
Soukup RJ, Prabukanthan P, Ianno NJ, Sarkar A, Kamler CA, Sekora DG. Formation of pyrite (FeS2) thin films by thermal sulfurization of dc magnetron sputtered iron Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 29. DOI: 10.1116/1.3517739 |
0.684 |
|
2011 |
Kment S, Kmentova H, Sarkar A, Soukup RJ, Ianno NJ, Krysa J, Hubicka Z, Olejnicek J, Exstrom CL, Darveau SA. A novel sol-gel route to pinhole-free iron sulfide thin films Conference Record of the Ieee Photovoltaic Specialists Conference. 001287-001291. DOI: 10.1109/PVSC.2011.6186193 |
0.436 |
|
2011 |
Olejníček J, Kamler CA, Darveau SA, Exstrom CL, Slaymaker LE, Vandeventer AR, Ianno NJ, Soukup RJ. Formation of CuIn1 - XAlxSe2 thin films studied by Raman scattering Thin Solid Films. 519: 5329-5334. DOI: 10.1016/J.Tsf.2011.02.030 |
0.385 |
|
2011 |
Rodenhausen K, Guericke M, Sarkar A, Hofmann T, Ianno N, Schubert M, Tiwald T, Solinsky M, Wagner M. Micelle-assisted bilayer formation of cetyltrimethylammonium bromide thin films studied with combinatorial spectroscopic ellipsometry and quartz crystal microbalance techniques Thin Solid Films. 519: 2821-2824. DOI: 10.1016/J.Tsf.2010.11.078 |
0.648 |
|
2011 |
Olejníček J, Flannery LE, Darveau SA, Exstrom CL, Kment S, Ianno NJ, Soukup RJ. CuIn1-xAlxS2 thin films prepared by sulfurization of metallic precursors Journal of Alloys and Compounds. 509: 10020-10024. DOI: 10.1016/J.Jallcom.2011.08.016 |
0.386 |
|
2010 |
Huguenin-Love J, Lauer NT, Soukup RJ, Ianno NJ, Kment S, Hubicka Z. The deposition of 3C-SiC thin films onto the (111) and (110) faces of Si using pulsed sputtering of a hollow cathode Materials Science Forum. 645: 131-134. DOI: 10.4028/Www.Scientific.Net/Msf.645-648.131 |
0.369 |
|
2010 |
Huguenin-Love JL, Soukup RJ, Ianno NJ, Lauer NT. Epitaxial Deposition of 3C-SiC on Si Using Unconventional Sputtering of a Hollow Cathode Mrs Proceedings. 1246. DOI: 10.1557/Proc-1246-B07-17 |
0.38 |
|
2010 |
Ianno NJ, Pu J, Zhou F. Optical characterization of condensed RTV effluent as a function of temperature Proceedings of Spie - the International Society For Optical Engineering. 7794. DOI: 10.1117/12.859310 |
0.441 |
|
2010 |
Ianno NJ, Speckman DM. The effect of deposition conditions on the atomic oxygen induced degradation of MgF2 anti-reflective coatings Conference Record of the Ieee Photovoltaic Specialists Conference. 2546-2549. DOI: 10.1109/PVSC.2010.5614585 |
0.394 |
|
2010 |
Olejníček J, Kamler CA, Mirasano A, Martinez-Skinner AL, Ingersoll MA, Exstrom CL, Darveau SA, Huguenin-Love JL, Diaz M, Ianno NJ, Soukup RJ. A non-vacuum process for preparing nanocrystalline CuIn1-xGaxSe2 materials involving an open-air solvothermal reaction Solar Energy Materials and Solar Cells. 94: 8-11. DOI: 10.1016/J.Solmat.2009.03.024 |
0.371 |
|
2010 |
Huguenin-Love JL, Soukup RJ, Ianno NJ, Lauer NT. Epitaxial deposition of 3C-SiC on Si using unconventional sputtering of a hollow cathode Materials Research Society Symposium Proceedings. 1246: 167-172. |
0.415 |
|
2009 |
Olejníček J, Darveau SA, Exstrom CL, Soukup RJ, Ianno NJ, Kamler CA, Huguenin-Love J. Problems with synthesis of chalcopyrite CuIn1-xBxSe2 Materials Science Forum. 609: 33-36. DOI: 10.4028/Www.Scientific.Net/Msf.609.33 |
0.377 |
|
2009 |
Exstrom CL, Olejníček J, Darveau SA, Mirasano A, Paprocki DS, Schliefert ML, Ingersoll MA, Slaymaker LE, Soukup RJ, Ianno NJ, Kamler CA. Solvothermal preparation, processing, and characterization of nanocrystalline CuIn1-xAlxSe2 materials Mrs Proceedings. 1165: 153-158. DOI: 10.1557/Proc-1165-M05-03 |
0.313 |
|
2009 |
Prabukanthan P, Harichandran G, Soukup RJ, Ianno NJ, Exstrom CL, Darveau SA, Olejníèek J. Self organized nanostructures of vapor phase grown CuGaS2 thin films Conference Record of the Ieee Photovoltaic Specialists Conference. 001285-001290. DOI: 10.1109/PVSC.2009.5411249 |
0.415 |
|
2009 |
Kamler CA, Soukup RJ, Ianno NJ, Huguenin-Love JL, Olejníček J, Darveau SA, Exstrom CL. Thin films formed by selenization of CuInxB1-x precursors in Se vapor Solar Energy Materials and Solar Cells. 93: 45-50. DOI: 10.1016/J.Solmat.2008.02.027 |
0.514 |
|
2008 |
Ianno NJ, Thompson DW. Optical characterization of condensed and photofixed RTV effluent Proceedings of Spie - the International Society For Optical Engineering. 7069. DOI: 10.1117/12.794815 |
0.439 |
|
2008 |
Soukup RJ, Huguenin-Love JL, Ianno NJ, Thompson DW. Experimental studies of Ge1-xCx and Ge 1-x-yCx Aly thin films Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 26: 17-22. DOI: 10.1116/1.2805244 |
0.45 |
|
2008 |
Soukup RJ, Ianno NJ, Kamler C, Diaz M, Sharma S, Huguenin-Love J, Olejniček J, Darveau SA, Exstrom CL. Ex-situ and in-situ selenization of copper-indium and copper-boron thin films Conference Record of the Ieee Photovoltaic Specialists Conference. DOI: 10.1109/PVSC.2008.4922546 |
0.383 |
|
2008 |
Ianno NJ, Soukup RJ, Lauer N, Hirsch SG, Hubbard C, Demaree JD, Cole MW. Dual RF hollow cathode plasma jet deposition of BaxSr 1-xTiO3 Integrated Ferroelectrics. 101: 63-69. DOI: 10.1080/10584580802459036 |
0.4 |
|
2007 |
Ianno NJ, Soukup RJ, Santero T, Kamler C, Huguenin-Love J, Darveau SA, Olejnicek J, Exstrom CL. Copper-Indium-Boron-Diselenide Absorber Materials Mrs Proceedings. 1012: 151-156. DOI: 10.1557/Proc-1012-Y03-21 |
0.461 |
|
2007 |
Huguenin-Love JL, Soukup RJ, Ianno NJ, Schrader JS, Dalal VL. Thin films of GeC deposited using a unique hollow cathode sputtering technique Materials Research Society Symposium Proceedings. 910: 163-168. DOI: 10.1557/Proc-0910-A07-03 |
0.536 |
|
2007 |
Huguenin-Love JL, Soukup RJ, Ianno NJ, Schrader JS, Dalal VL. The properties of Ge-C thin films deposited using dual hollow cathodes Conference Record of the 2006 Ieee 4th World Conference On Photovoltaic Energy Conversion, Wcpec-4. 1: 114-117. DOI: 10.1109/WCPEC.2006.279377 |
0.456 |
|
2007 |
Soukup RJ, Ianno NJ, Huguenin-Love JL. Analysis of semiconductor thin films deposited using a hollow cathode plasma torch Solar Energy Materials and Solar Cells. 91: 1383-1387. DOI: 10.1016/J.Solmat.2007.04.024 |
0.386 |
|
2007 |
Huguenin-Love JL, Soukup RJ, Ianno NJ, Schrader JS, Dalal VL. Thin films of GeC deposited using a unique hollow cathode sputtering technique Materials Research Society Symposium Proceedings. 910: 163-168. |
0.452 |
|
2007 |
Ianno NJ, Soukup RJ, Santero T, Kamler C, Huguenin-Love J, Darveau SA, Olejnicek J, Exstrom CL. Copper-indium-boron-diselenide absorber materials Materials Research Society Symposium Proceedings. 1012: 151-156. |
0.358 |
|
2006 |
Huguenin-Love JL, Soukup RJ, Ianno NJ, Schrader JS, Thompson DW, Dalal VL. Optical and crystallographic analysis of thin films of GeC deposited using a unique hollow cathode sputtering technique Materials Science in Semiconductor Processing. 9: 759-763. DOI: 10.1016/J.Mssp.2006.08.026 |
0.517 |
|
2005 |
Ianno N, Soukup R, Hubička Z, Olejnčcek J, Ŝíchová H. Rf Hollow Cathode Plasma Jet Depopsition of BaxSR1-XTI03 Films Mrs Proceedings. 869. DOI: 10.1557/PROC-869-D2.4 |
0.41 |
|
2005 |
Soukup RJ, Ianno NJ, Darveau SA, Exstrom CL. Thin films of a-SiGe:H with device quality properties prepared by a novel hollow cathode deposition technique Solar Energy Materials and Solar Cells. 87: 87-98. DOI: 10.1016/J.Solmat.2004.08.023 |
0.551 |
|
2005 |
Soukup RJ, Ianno NJ, Schrader JS, Dalal VL. Polycrystalline GeC thin films deposited using a unique hollow cathode sputtering technique Materials Research Society Symposium Proceedings. 862: 195-200. |
0.479 |
|
2005 |
Ianno NJ, Soukup RJ, Hubička Z, Olejníček J, Šíchovà H. RF hollow cathode plasma jet depopsition of BaxSr 1-xTi03 films Materials Research Society Symposium Proceedings. 869: 133-138. |
0.426 |
|
2004 |
Soukup RJ, Ianno NJ, Darveau SA, Exstrom CL. Optical and electronic characterization of a-SiGe:H thin films prepared by a novel hollow cathode deposition technique Mrs Proceedings. 808: 365-370. DOI: 10.1557/Proc-808-A9.4 |
0.536 |
|
2004 |
Cho SJ, Snyder PG, Ianno NJ, Herzinger CM, Johs B. Control of etch depth in patterned semiconductor substrates using real time spectroscopic ellipsometry Thin Solid Films. 455: 645-649. DOI: 10.1016/J.Tsf.2004.01.034 |
0.329 |
|
2004 |
Pribil GK, Johs B, Ianno NJ. Dielectric function of thin metal films by combined in situ transmission ellipsometry and intensity measurements Thin Solid Films. 455: 443-449. DOI: 10.1016/j.tsf.2003.11.243 |
0.393 |
|
2004 |
Soukup RJ, Ianno NJ, Pribil G, Hubicka Z. Deposition of high quality amorphous silicon, germanium and silicon-germanium thin films by a hollow cathode reactive sputtering system Surface and Coatings Technology. 177: 676-681. DOI: 10.1016/J.Surfcoat.2003.08.006 |
0.419 |
|
2004 |
Soukup RJ, Ianno NJ, Darveau SA, Exstrom CL. Optical and electronic characterization of a-SiGe:H thin films prepared by a novel hollow cathode deposition technique Materials Research Society Symposium Proceedings. 808: 365-370. |
0.446 |
|
2002 |
Hubička Z, Pribil G, Soukup RJ, Ianno NJ. Investigation of the rf and dc hollow cathode plasma-jet sputtering systems for the deposition of silicon thin films Surface and Coatings Technology. 160: 114-123. DOI: 10.1016/S0257-8972(02)00389-4 |
0.387 |
|
2002 |
Ianno NJ, Enshashy H, Dillon RO. Aluminum oxynitride coatings for oxidation resistance of epoxy films Surface and Coatings Technology. 155: 130-135. DOI: 10.1016/S0257-8972(02)00051-8 |
0.407 |
|
2001 |
Dillon RO, Ali A, Ianno NJ, Ahmad A, Furtak T. Sound velocity and Young's modulus in plasma deposited amorphous hydrogenated carbon Journal of Vacuum Science and Technology, Part a: Vacuum, Surfaces and Films. 19: 2826-2830. DOI: 10.1116/1.1407242 |
0.451 |
|
2001 |
Pribil G, Hubička Z, Soukup RJ, Ianno NJ. Deposition of electronic quality amorphous silicon, a-Si:H, thin films by a hollow cathode plasma-jet reactive sputtering system Journal of Vacuum Science and Technology. 19: 1571-1576. DOI: 10.1116/1.1359537 |
0.365 |
|
2001 |
Abdul-Gader MM, Al-Binni UA, Ahmad AA, Al-Basha MA, Ianno NJ. Low-field current transport mechanisms in rf magnetron sputter deposited boron carbide (B5C)/p-type crystalline silicon junctions in the dark International Journal of Electronics. 88: 873-901. DOI: 10.1080/00207210110058120 |
0.356 |
|
1999 |
Ianno NJ, Makovicka TJ. Measurement of the permeability of thin films Review of Scientific Instruments. 70: 2072-2075. |
0.425 |
|
1998 |
Ahmad AA, Ianno NJ, Hwang SD, Dowben PA. Sputter deposition of high resistivity boron carbide Thin Solid Films. 335: 174-177. DOI: 10.1016/S0040-6090(98)00876-1 |
0.453 |
|
1998 |
Snyder PG, Tiwald TE, Thompson DW, Ianno NJ, Woollam JA, Mauk MG, Shellenbarger ZA. Infrared free carrier response of In0.15Ga0.85As0.17Sb0.83 epilayers on GaSb Thin Solid Films. 313: 667-670. DOI: 10.1016/S0040-6090(97)00974-7 |
0.365 |
|
1998 |
McIlroy DN, Hwang SD, Yang K, Remmes N, Dowben PA, Ahmad AA, Ianno NJ, Li JZ, Lin JY, Jiang HX. The incorporation of nickel and phosphorus dopants into boron-carbon alloy thin films Applied Physics a: Materials Science and Processing. 67: 335-342. DOI: 10.1007/S003390050780 |
0.415 |
|
1997 |
Hwang SD, Yang K, Dowben PA, Ahmad AA, Ianno NJ, Li JZ, Lin JY, Jiang HX, Mcllroy DN. Fabrication of n-type nickel doped B5C1+δ homojunction and heterojunction diodes Applied Physics Letters. 70: 1028-1030. DOI: 10.1063/1.118434 |
0.49 |
|
1996 |
Synowicki RA, Hale JS, McGahan WA, Ianno NJ, Woollam JA. Oxygen plasma asher contamination: An analysis of sources and remedies Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 14: 3075-3081. DOI: 10.1116/1.580174 |
0.349 |
|
1996 |
Ahmad AA, Ianno NJ, Snyder PG, Welipitiya D, Byun D, Dowben PA. Optical properties of boron carbide (B5C) thin films fabricated by plasma‐enhanced chemical‐vapor deposition Journal of Applied Physics. 79: 8643-8647. DOI: 10.1063/1.362487 |
0.525 |
|
1996 |
Ahmad AA, Ianno NJ, Snyder PG, Welipitiya D, Byun D, Dowben PA. Optical properties of boron carbide (B5C) thin films fabricated by plasma-enhanced chemical-vapor deposition Journal of Applied Physics. 79: 8643-8647. |
0.457 |
|
1995 |
Snyder PG, Ianno NJ, Wigert B, Pittal S, Johs B, Woollam JA. Spectroscopic ellipsometric monitoring of electron cyclotron resonance plasma etching of GaAs and AlGaAs Journal of Vacuum Science & Technology B. 13: 2255-2259. DOI: 10.1116/1.588059 |
0.309 |
|
1995 |
Hwang SD, Byun D, Ianno NJ, Dowben PA, Kim HR. Fabrication of boron-carbide/boron heterojunction devices Applied Physics Letters. 1495. DOI: 10.1063/1.116266 |
0.447 |
|
1995 |
Byun D, Spady BR, Ianno NJ, Dowben PA. Comparison of different chemical vapor deposition methodologies for the fabrication of heterojunction boron-carbide diodes Nanostructured Materials. 5: 465-471. DOI: 10.1016/0965-9773(95)00256-E |
0.534 |
|
1995 |
Ianno NJ, Dillon RO, Ali A, Ahmad A. Deposition of diamond-like carbon on a titanium biomedical alloy Thin Solid Films. 270: 275-278. DOI: 10.1016/0040-6090(95)06710-8 |
0.318 |
|
1994 |
Byun D, Hwang SD, Dowben PA, Perkins FK, Filips F, Ianno NJ. Heterojunction fabrication by selective area chemical vapor deposition induced by synchrotron radiation Applied Physics Letters. 64: 1968-1970. DOI: 10.1063/1.111758 |
0.383 |
|
1994 |
Ianno NJ, Ahmer S, Pittal S, Woollam JA. In-situ ellipsometric monitoring of the electron cyclotron resonance etching of dianmond-like carbon Materials Research Society Symposium - Proceedings. 349: 535-540. |
0.343 |
|
1993 |
Pittal S, Snyder PG, Ianno NJ. Ellipsometry study of non-uniform lateral growth of ZnO thin films Thin Solid Films. 233: 286-288. DOI: 10.1016/0040-6090(93)90109-3 |
0.392 |
|
1993 |
Nafis S, Ianno NJ, Snyder PG, McGahan WA, Johs B, Woollam JA. Electron cyclotron resonance etching of semiconductor structures studied by in-situ spectroscopic ellipsometry Thin Solid Films. 233: 253-255. DOI: 10.1016/0040-6090(93)90101-T |
0.363 |
|
1993 |
Ianno NJ, Heckens S, Hale JS. Chemical and thermal resistance of diamondlike carbon thin films Applied Physics Communications. 12: 105-119. |
0.322 |
|
1992 |
Ianno NJ, Erington KB. Thin films of uniform thickness by pulsed laser deposition Review of Scientific Instruments. 63: 3525-3526. DOI: 10.1063/1.1143762 |
0.315 |
|
1992 |
Ianno NJ, McConville L, Shaikh N, Pittal S, Snyder PG. Characterization of pulsed laser deposited zinc oxide Thin Solid Films. 220: 92-99. DOI: 10.1016/0040-6090(92)90554-O |
0.46 |
|
1991 |
De BN, Ianno NJ, Snyder PG, Woollam JA, Pouch JJ. Coloration of glass exposed to atomic oxygen Journal of Materials Engineering. 13: 213-216. DOI: 10.1007/Bf02834180 |
0.314 |
|
1990 |
Woollam JA, De BN, Orzeszko S, Ianno NJ, Snyder PG, Alterovitz SA, Pouch JJ, Wu RLC, Ingram DC. Diamondlike Carbon Applications in Infrared Optics and Microelectronics Materials Science Forum. 577-608. DOI: 10.4028/Www.Scientific.Net/Msf.52-53.577 |
0.377 |
|
1990 |
Erington KB, Mcgahan W, Ianno NJ, Woollam JA. Pulsed Laser Deposition of Magneto-Optic Material Mrs Proceedings. 191. DOI: 10.1557/Proc-191-97 |
0.388 |
|
1990 |
Ianno NJ, Woollam JA, Liou SH, Thompson D, Johs B. Pulsed laser deposition of HTSC thallium films Proceedings of Spie - the International Society For Optical Engineering. 1187: 66-74. DOI: 10.1117/12.965150 |
0.328 |
|
1990 |
Ianno NJ, Liou SH, Woollam JA, Thompson D, Johs B. Pulsed laser deposition of tl-ca-ba-cu-o films Proceedings of Spie - the International Society For Optical Engineering. 1292: 24-37. |
0.361 |
|
1989 |
Johs B, Thompson D, Ianno NJ, Woollam JA, Liou SH, Hermann AM, Sheng ZZ, Kiehl W, Shams Q, Fei X, Sheng L, Liu YH. Preparation of high Tc Tl-Ba-Ca-Cu-O thin films by pulsed laser evaporation and Tl2O3 vapor processing Applied Physics Letters. 54: 1810-1811. DOI: 10.1063/1.101493 |
0.338 |
|
1989 |
Liou SH, Aylesworth KD, Ianno NJ, Johs B, Thompson D, Meyer D, Woollam JA, Barry C. Highly oriented Tl2Ba2Ca2Cu 3O10 thin films by pulsed laser evaporation Applied Physics Letters. 54: 760-762. DOI: 10.1063/1.101473 |
0.473 |
|
1989 |
Mahowald MA, Ianno NJ. Plasma-enhanced chemical vapor deposition of tungsten Thin Solid Films. 170: 91-97. DOI: 10.1016/0040-6090(89)90625-1 |
0.443 |
|
1989 |
De BN, Ianno NJ, Snyder PG, Woollam JA, Pouch JJ. Study of coloration effects on glass slides exposed in an oxygen plasma asher Applied Physics Communications. 9: 35-41. |
0.309 |
|
1987 |
Ianno NJ, Ahmed AU, Englebert DE. PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION OF TIN FROM TICL//4/N//2/H//2 GAS MIXTURES . 164-169. |
0.409 |
|
1985 |
Ianno NJ, Plaster JA. PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION OF MOLYBDENUM . 18-21. DOI: 10.1016/0040-6090(87)90284-7 |
0.481 |
|
1985 |
Hoffman DL, Ianno NJ, Mahowald MA. PLASMA ETCHING OF DIAMONDLIKE CARBON FILMS Applied Physics Communications. 5: 203-210. |
0.347 |
|
Show low-probability matches. |