| Year |
Citation |
Score |
| 2015 |
Nam WJ, Fischer D, Gray Z, Nguyen N, Ji L, Neidich D, Fonash SJ. 30% increase in available photons per cell area using nanoelement array light trapping in 700-nm-Thick nc-Si Solar Cells Ieee Journal of Photovoltaics. 5: 28-32. DOI: 10.1109/JPHOTOV.2014.2363565 |
1 |
|
| 2014 |
Nam WJ, Pan S, Garg P, Fonash SJ. A Bottom-up SiNW AMOSFET fabrication approach giving SOI level performance Ecs Transactions. 64: 3-8. DOI: 10.1149/06410.0003ecst |
1 |
|
| 2014 |
Fonash SJ. Introduction to Light Trapping in Solar Cell and Photo-detector Devices Introduction to Light Trapping in Solar Cell and Photo-Detector Devices. 1-65. |
1 |
|
| 2013 |
Ji L, Nam WJ, Fonash S. Highly ordered nano-cone back reflector arrays for ultra-thin high performance CIGS cells Conference Record of the Ieee Photovoltaic Specialists Conference. 1977-1979. DOI: 10.1109/PVSC.2013.6744858 |
1 |
|
| 2013 |
Forgie K, Nguyen N, Nam WJ, Fonash SJ. Paving the way for high-performance quantum dot solar cells Conference Record of the Ieee Photovoltaic Specialists Conference. 1861-1863. DOI: 10.1109/PVSC.2013.6744505 |
1 |
|
| 2013 |
Smith C, Nguyen N, Ji L, Nam WJ, Fonash S. Learning to appreciate the maxim 'less is more' Conference Record of the Ieee Photovoltaic Specialists Conference. 621-623. DOI: 10.1109/PVSC.2013.6744227 |
1 |
|
| 2013 |
Nguyen N, Jiang Z, Forgie K, Nam WJ, Xu J, Fonash SJ. AMPS-1D simulation examination of the measured performance of a PbSe QD tandem solar cell structure Conference Record of the Ieee Photovoltaic Specialists Conference. 300-302. DOI: 10.1109/PVSC.2013.6744152 |
1 |
|
| 2012 |
Fonash SJ, Nam WJ, Ji L, Varadan VV. Photonics and plasmonics applied to solar cells Proceedings of Spie - the International Society For Optical Engineering. 8482. DOI: 10.1117/12.928052 |
1 |
|
| 2012 |
Nam WJ, Fonash SJ, Ji L, Varadan VV. Non-metallic, manufacturable arrays for high performance single junction thin film nc-Si solar cells Conference Record of the Ieee Photovoltaic Specialists Conference. 350-353. DOI: 10.1109/PVSC.2012.6317634 |
1 |
|
| 2012 |
Jun Nam W, Ji L, Varadan VV, Fonash SJ. Exploration of nano-element array architectures for substrate solar cells using an a-Si:H absorber Journal of Applied Physics. 111. DOI: 10.1063/1.4729539 |
1 |
|
| 2012 |
Carrion H, Joshi S, Shirwaiker R, Fonash SJ. A novel fabrication method for embedding metal structures into polymers for flexible electronics 62nd Iie Annual Conference and Expo 2012. 3212-3221. |
1 |
|
| 2011 |
Liu YJ, Shi J, Zhang F, Liang H, Xu J, Lakhtakia A, Fonash SJ, Huang TJ. High-speed optical humidity sensors based on chiral sculptured thin films. Sensors and Actuators. B, Chemical. 156: 593-598. PMID 30739999 DOI: 10.1016/j.snb.2011.02.003 |
1 |
|
| 2011 |
Nam WJ, Ji L, Varadan VV, Fonash S. Light and carrier collection management (LCCM) cell architechures: Some configuration comparisons Conference Record of the Ieee Photovoltaic Specialists Conference. 000917-000919. DOI: 10.1109/PVSC.2011.6186101 |
1 |
|
| 2011 |
Nam WJ, Ji L, Varadan VV, Fonash SJ. Designing optical path length, photonic, and plasmonic effects into nanostructured solar cells Proceedings of the Ieee Conference On Nanotechnology. 1409-1412. DOI: 10.1109/NANO.2011.6144594 |
1 |
|
| 2010 |
Garg P, Wu J, Fonash SJ. Accumulation-mode MOSFET (AMOSFETs) fabricated on silicon nanowires and polysilicon thin films Ecs Transactions. 28: 43-49. DOI: 10.1149/1.3491772 |
1 |
|
| 2010 |
Wu J, Garg P, Fonash SJ. The silicon nanowire accumulation-mode MOSFETs Ecs Transactions. 33: 23-30. DOI: 10.1149/1.3481215 |
1 |
|
| 2010 |
Nam WJ, Liu T, Wagner S, Fonash S. A study of lateral collection single junction A-SI:H solar cell devices using nano-scale columnar array Conference Record of the Ieee Photovoltaic Specialists Conference. 923-927. DOI: 10.1109/PVSC.2010.5614685 |
1 |
|
| 2010 |
Cuiffi J, Benanti T, Nam WJ, Fonash S. Modeling of bulk and bilayer organic heterojunction solar cells Applied Physics Letters. 96. DOI: 10.1063/1.3383232 |
1 |
|
| 2010 |
Fonash SJ. Solar Cell Device Physics Solar Cell Device Physics. |
1 |
|
| 2009 |
Cuiffi J, Benanti T, Nam WJ, Fonash S. Application of the AMPS computer program to organic bulk heterojunction solar cells Conference Record of the Ieee Photovoltaic Specialists Conference. 001546-001551. DOI: 10.1109/PVSC.2009.5411361 |
1 |
|
| 2009 |
Fonash SJ. Nanotechnology and economic resiliency Nano Today. 4: 290-291. DOI: 10.1016/j.nantod.2009.05.003 |
1 |
|
| 2009 |
Garg P, Hong Y, Iqbal MMH, Fonash SJ. Effect of metal-silicon nanowire contacts on the performance of accumulation metal oxide semiconductor field effect transistor Materials Research Society Symposium Proceedings. 1144: 57-62. |
1 |
|
| 2008 |
Shan Y, Fonash SJ. Self-assembling silicon nanowires for device applications using the nanochannel-guided "grow-in-place" approach. Acs Nano. 2: 429-34. PMID 19206566 DOI: 10.1021/nn700232q |
1 |
|
| 2008 |
Garg P, Hong Y, Iqbal MMH, Migliorato P, Fonash SJ. The AMOSFET - A simple, high performance FET for thin films, nanowires, and nanoribbons Ecs Transactions. 16: 159-164. DOI: 10.1149/1.2980545 |
1 |
|
| 2008 |
Liang H, Nam WJ, Fonash SJ. A novel parallel flow control (PFC) system for syringe-driven nanofluidics Technical Proceedings of the 2008 Nsti Nanotechnology Conference and Trade Show, Nsti-Nanotech, Nanotechnology 2008. 3: 281-283. |
1 |
|
| 2007 |
Fonash SJ, Iqbal MMH, Udrea F, Migliorato P. Numerical modeling study of the unipolar accumulation transistor Applied Physics Letters. 91. DOI: 10.1063/1.2805630 |
1 |
|
| 2007 |
Shan Y, Ashok S, Fonash SJ. Unipolar accumulation-type transistor configuration implemented using Si nanowires Applied Physics Letters. 91. DOI: 10.1063/1.2778752 |
1 |
|
| 2007 |
Shan Y, Fonash SJ. Silicon nanowire transistor fabrication by the self-assembling "grow-in-place" approach with mass manufacturability 2007 Nsti Nanotechnology Conference and Trade Show - Nsti Nanotech 2007, Technical Proceedings. 1: 265-268. |
1 |
|
| 2007 |
Keebaugh S, Nam WJ, Fonash SJ. Manufacturable, highly responsive gold nanowire mercury sensors 2007 Nsti Nanotechnology Conference and Trade Show - Nsti Nanotech 2007, Technical Proceedings. 3: 33-36. |
1 |
|
| 2006 |
Liu G, Rider KB, Nam WJ, Fonash SJ, Kim SH. Dendritic aggregation of oligothiophene during desorption of 2,5-diiodothiophene multilayer and topography-induced alignment of oligothiophene nanofibers. The Journal of Physical Chemistry. B. 110: 20197-201. PMID 17034196 DOI: 10.1021/jp063363f |
1 |
|
| 2006 |
Keebaugh S, Kalkan AK, Nam WJ, Fonash SJ. Gold nanowires for the detection of elemental and ionic mercury Electrochemical and Solid-State Letters. 9. DOI: 10.1149/1.2217130 |
1 |
|
| 2006 |
Nam WJ, Joshi S, Fonash SJ. A STEP-and-GROW technique - An economic and environmentally safe manufacturing approach for fabricating ordered nano structures Nanosingapore 2006: Ieee Conference On Emerging Technologies - Nanoelectronics - Proceedings. 2006: 322-323. DOI: 10.1109/NANOEL.2006.1609738 |
1 |
|
| 2006 |
Fonash SJ, Fenwick D, Hallacher P, Kuzma T, Nam WJ. Education and training approach for the future nanotechnology workforce Nanosingapore 2006: Ieee Conference On Emerging Technologies - Nanoelectronics - Proceedings. 2006: 235-236. DOI: 10.1109/NANOEL.2006.1609719 |
1 |
|
| 2006 |
Kalkan AK, Fonash SJ. Laser-activated surface-enhanced Raman scattering substrates capable of single molecule detection Applied Physics Letters. 89. DOI: 10.1063/1.2399369 |
1 |
|
| 2006 |
Liang H, Nam WJ, Fonash SJ. A self-contained, nano-gap biomolecule impedance sensor with fluidic control system Materials Research Society Symposium Proceedings. 952: 35-40. |
1 |
|
| 2005 |
Kalkan AK, Fonash SJ. Electroless synthesis of Ag nanoparticles on deposited nanostructured Si films. The Journal of Physical Chemistry. B. 109: 20779-85. PMID 16853693 DOI: 10.1021/jp052958s |
1 |
|
| 2005 |
Peng CY, Kalkan AK, Fonash SJ, Gu B, Sen A. A "grow-in-place" architecture and methodology for electrochemical synthesis of conducting polymer nanoribbon device arrays. Nano Letters. 5: 439-44. PMID 15755091 DOI: 10.1021/nl048083v |
1 |
|
| 2005 |
Lee Y, Bae S, Fonash SJ. High-performance nonhydrogenated nickel-induced laterally crystallized P-channel poly-Si TFTs Ieee Electron Device Letters. 26: 900-902. DOI: 10.1109/LED.2005.859625 |
1 |
|
| 2005 |
Li H, Fonash SJ. Reliability study of milc poly-Si TFTs on plastic substrates using postflex transfer process Proceedings - Electrochemical Society. 49-56. |
1 |
|
| 2005 |
Shan Y, Kalkan AK, Fonash SJ. The self-assembling "grow-in-place" process: An environmentally friendly approach to nanowire device fabrication Materials Research Society Symposium Proceedings. 901: 418-423. |
1 |
|
| 2004 |
Nam WJ, Fonash SJ, Cuiffi JD. Fabrication and evaluation of highly manufacturable nanoscale flow-through parallel electrode structures Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 22. DOI: 10.1116/1.1808748 |
1 |
|
| 2004 |
Kalkan AK, Li H, O'Brien CJ, Fonash SJ. A rapid-response, high-sensitivity nanophase humidity sensor for respiratory monitoring Ieee Electron Device Letters. 25: 526-528. DOI: 10.1109/LED.2004.832657 |
1 |
|
| 2004 |
Shan Y, Kalkan AK, Peng CY, Fonash SJ. From Si source gas directly to positioned, electrically contacted Si nanowires: The self-assembling "grow-in-place" approach Nano Letters. 4: 2085-2089. DOI: 10.1021/nl048901j |
1 |
|
| 2004 |
Hallacher PM, Fenwick DE, Fonash SJ. Planning a NSF ATE national center in nanomanufacturing education Asee Annual Conference Proceedings. 11067-11071. |
1 |
|
| 2003 |
Peng CY, Nam WJ, Fonash SJ, Gu B, Sen A, Strawhecker K, Natarajan S, Foley HC, Kim SH. Formation of nanostructured polymer filaments in nanochannels. Journal of the American Chemical Society. 125: 9298-9. PMID 12889951 DOI: 10.1021/ja0345423 |
1 |
|
| 2003 |
Lee Y, Li H, Fonash SJ. High-performance poly-Si TFT on plastic substrates using a nano-structured separation layer approach Ieee Electron Device Letters. 24: 19-21. DOI: 10.1109/LED.2002.807021 |
1 |
|
| 2003 |
Suliman SA, Venkataraman B, Wu CT, Ridley RS, Dolny GM, Awadelkarim OO, Fonash SJ, Ruzyllo J. Electrical properties of the gate oxide and its interface with Si in U-shaped trench MOS capacitors: The impact of polycrystalline Si doping and oxide composition Solid-State Electronics. 47: 899-905. DOI: 10.1016/S0038-1101(02)00442-2 |
1 |
|
| 2003 |
Kalkan AK, Fonash SJ. Carbon/Nafion® nanocomposite thin films as potential matrix-free laser desorption-ionization mass spectroscopy substrates Materials Research Society Symposium - Proceedings. 788: 595-600. |
1 |
|
| 2003 |
Hallacher PM, Fenwick DE, Fonash SJ. Pathways from community college to bachelors of science in engineering with A nanotechnology minor Asee Annual Conference Proceedings. 1355-1360. |
1 |
|
| 2002 |
Sturm JC, Gleskova H, Jackson TN, Fonash SJ, Wagner S. Enabling technologies for plastic displays Proceedings of Spie - the International Society For Optical Engineering. 4712: 222-236. DOI: 10.1117/12.480927 |
1 |
|
| 2002 |
Lin X, Fonash SJ. Low temperature silicon dioxide thin films deposited using tetramethylsilane for stress control and coverage applications Materials Research Society Symposium - Proceedings. 695: 371-376. |
1 |
|
| 2002 |
Hallacher PM, Fenwick DE, Fonash SJ. A regional center for manufarctuing education in nanofabrication Asee Annual Conference Proceedings. 7959-7966. |
1 |
|
| 2002 |
Hallacher PM, Fenwick DE, Fonash SJ. The Pennsylvania nanofabrication manufacturing technology partnership: Resource sharing for nanotechnology workforce development International Journal of Engineering Education. 18: 526-531. |
1 |
|
| 2001 |
Cuiffi JD, Hayes DJ, Fonash SJ, Brown KN, Jones AD. Desorption-ionization mass spectrometry using deposited nanostructured silicon films. Analytical Chemistry. 73: 1292-5. PMID 11305665 DOI: 10.1021/ac001081k |
1 |
|
| 2001 |
Wagner S, Fonash SJ, Jackson TN, Sturm JC. Flexible display enabling technology Proceedings of Spie - the International Society For Optical Engineering. 4362: 226-244. DOI: 10.1117/12.439119 |
1 |
|
| 2001 |
Nam WJ, Bae S, Kalkan AK, Fonash SJ. Nano- and microchannel fabrication using column/void network deposited silicon Journal of Vacuum Science and Technology, Part a: Vacuum, Surfaces and Films. 19: 1229-1233. DOI: 10.1116/1.1365129 |
1 |
|
| 2001 |
Krishnan AT, Bae S, Fonash SJ. Fabrication of microcrystalline silicon TFTs using a high-density plasma approach Ieee Electron Device Letters. 22: 399-401. DOI: 10.1109/55.936356 |
1 |
|
| 2001 |
Fonash SJ. Education and training of the nanotechnology workforce Journal of Nanoparticle Research. 3: 79-82. DOI: 10.1023/A:1011472503007 |
1 |
|
| 2001 |
Lin X, Fonash SJ. Preparation and characterization of low temperature silicon dioxide thin films using tetramethylsilane (TMS) for microfabrication applications Materials Research Society Symposium Proceedings. 685: 341-346. |
1 |
|
| 2001 |
Cheng IC, Wagner S, Bae S, Fonash SJ. High electron mobility TFTs of nanocrystalline silicon deposited at 150°C on plastic foil Materials Research Society Symposium - Proceedings. 664. |
1 |
|
| 2000 |
Sanghoon B, Farber DG, Fonash SJ. Chemical bonding and stability of 50 °C plasma-deposited silicon nitrides Electrochemical and Solid-State Letters. 3: 41-43. DOI: 10.1149/1.1390952 |
1 |
|
| 2000 |
Cuiffi JD, Zhu H, Fonash SJ. A trapped charge model for the transient effect in CIGS solar cells Conference Record of the Ieee Photovoltaic Specialists Conference. 2000: 674-675. DOI: 10.1109/PVSC.2000.915954 |
1 |
|
| 2000 |
Bae S, Farber DG, Fonash SJ. Characteristics of low-temperature silicon nitride (SiNx:H) using electron cyclotron resonance plasma Solid-State Electronics. 44: 1355-1360. DOI: 10.1016/S0038-1101(00)00086-1 |
1 |
|
| 2000 |
Krishnan AT, Bae S, Fonash SJ. Low temperature microcrystalline silicon thin film resistors on glass substrates Solid-State Electronics. 44: 1163-1168. DOI: 10.1016/S0038-1101(00)00057-5 |
1 |
|
| 2000 |
Bae S, Fonash SJ. Defined crystallization of amorphous-silicon films using contact printing Applied Physics Letters. 76: 595-597. |
1 |
|
| 2000 |
Kaan Kalkan A, Fonash SJ, Cheng SC. Band-tail photoluminescence in nanocrystalline Si Applied Physics Letters. 77: 55-57. |
1 |
|
| 2000 |
Kalkan AK, Bae S, Li H, Hayes DJ, Fonash SJ. Nanocrystalline Si thin films with arrayed void-column network deposited by high density plasma Journal of Applied Physics. 88: 555-561. |
1 |
|
| 2000 |
Cheng SC, Pantano CG, Kalkan AK, Bae SH, Fonash SJ. TEM characterisation of an interfacial layer between silicon and glass Physics and Chemistry of Glasses. 41: 136-139. |
1 |
|
| 2000 |
Okandan M, Fonash SJ, Maiti B, Tseng HH, Tobin P. Analysis of evolution to and beyond quasi-breakdown in ultra-thin oxide and oxynitride Annual Proceedings - Reliability Physics (Symposium). 191-193. |
1 |
|
| 1999 |
Okandan M, Fonash SJ, Maiti B, Tseng HH, Tobin P. Wearout, quasi breakdown, and annealing of ultrathin dielectrics. Impact on complementary metal oxide semiconductor performance and reliability Electrochemical and Solid-State Letters. 2: 583-584. DOI: 10.1149/1.1390912 |
1 |
|
| 1999 |
Bae S, Fonash SJ. Assessment of as-deposited microcrystalline silicon films on polymer substrates using electron cyclotron resonance-plasma enhanced chemical vapor deposition Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 17: 1987-1990. DOI: 10.1116/1.581715 |
1 |
|
| 1999 |
Fonash SJ. Plasma processing damage in etching and deposition Ibm Journal of Research and Development. 43: 103-106. |
1 |
|
| 1999 |
Zhu H, Kalkan AK, Cuiffi J, Fonash SJ. Directional breakdown of metal/a-Si:H/c-Si heterostructures and its application to PROMs Materials Research Society Symposium - Proceedings. 557: 857-862. |
1 |
|
| 1999 |
Wang YZ, Fonash SJ, Awadelkarim OO, Gu T. Crystallization of a-Si:H on glass for active layers in thin film transistors effects of glass coating Journal of the Electrochemical Society. 146: 299-305. |
1 |
|
| 1998 |
Bae S, Kalkan AK, Cheng S, Fonash SJ. Characteristics of amorphous and polycrystalline silicon films deposited at 120° C by electron cyclotron resonance plasma-enhanced chemical vapor deposition Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 16: 1912-1916. DOI: 10.1116/1.581195 |
1 |
|
| 1998 |
Reber DM, Fonash SJ. Low temperature, high quality silicon dioxide thin films deposited using tetramethylsilane (TMS) Materials Research Society Symposium - Proceedings. 508: 121-126. |
1 |
|
| 1997 |
Okandan M, Fonash SJ, Werking J. Cyclic I-V and Q-V: New measurement techniques for monitoring processes and processing induced damage Proceedings of Spie - the International Society For Optical Engineering. 3215: 84-93. DOI: 10.1117/12.284670 |
1 |
|
| 1997 |
Crowley JL, Awadelkarim OO, Fonash SJ, Jackson TN, Kahn A, Peterson TM, Sturm JC, Wagner S. Industry/university teaming for display research Proceedings of Spie - the International Society For Optical Engineering. 3057: 60-67. DOI: 10.1117/12.277004 |
1 |
|
| 1997 |
Fonash SJ, Awadelkarim OO, Crowley JL, Jackson TN, Kahn A, Sturm JC, Wagner S. Device technology for lightweight panoramic displays Proceedings of Spie - the International Society For Optical Engineering. 3057: 570-580. DOI: 10.1117/12.276983 |
1 |
|
| 1997 |
Kalkan AK, Fonash SJ. Metal-induced crystallization of a-Si thin films by non vacuum treatments Journal of the Electrochemical Society. 144. |
1 |
|
| 1996 |
Okandan M, Fonash SJ, Awadelkarim OO, Chan YD, Preuninger F. Soft-breakdown damage in MOSFET's due to high-density plasma etching exposure Ieee Electron Device Letters. 17: 388-394. DOI: 10.1109/55.511584 |
1 |
|
| 1996 |
Bae S, Fonash SJ. Impact of structure on photogating Journal of Applied Physics. 79: 2213-2220. |
1 |
|
| 1996 |
Howland WH, Fonash SJ. On semiconductor surface evaluation using the effective surface recombination speed for schottky-coupled photovoltage measurements Journal of the Electrochemical Society. 143: 1958-1962. |
1 |
|
| 1996 |
Globus T, Fonash SJ, Gildenblat G. Optical characterization of hydrogenated silicon films in the extended energy range Materials Research Society Symposium - Proceedings. 406: 313-318. |
1 |
|
| 1996 |
Okandan M, Fonash SJ, Awadelkarim OO, Chan YD. Observation of electroluminescence and 'soft-breakdown' effects in sub-0.5μm CMOS with ultrathin gate oxides International Symposium On Plasma Process-Induced Damage, P2id, Proceedings. 168-170. |
1 |
|
| 1996 |
Awadelkarim OO, Fonash SJ, Mikulan PI, Chan YD. Plasma-charging damage to gate SiO2 and SiO2/Si interfaces in submicron n-channel transistors: Latent defects and passivation/depassivation of defects by hydrogen Journal of Applied Physics. 79: 517-525. |
1 |
|
| 1996 |
Fonash SJ, Ozaita M, Awadelkarim OO, Preuninger F, Chan YD. Detection and comparison of localized states produced in poly-Si/ultra-thin oxide/silicon, structures by plasma exposure or plasma charging during reactive ion etching Journal of Applied Physics. 79: 2091-2096. |
1 |
|
| 1996 |
Fonash SJ, Ozaita M, Okandan M, Awadelkarim OO, Chan YD. New methodology for monitoring and comparing edge exposure and plasma charging current damage from plasma processing International Symposium On Plasma Process-Induced Damage, P2id, Proceedings. 84-86. |
1 |
|
| 1995 |
Howland WH, Fonash SJ. Errors and Error-Avoidance in the Schottky Coupled Surface Photovoltage Technique Journal of the Electrochemical Society. 142: 4262-4268. DOI: 10.1149/1.2048494 |
1 |
|
| 1995 |
Gu T, Awadelkarim OO, Fonash SJ, Rembetski JF, Chan YD. Annealing of Reactive ion Etching Plasma-Exposed Thin Oxides Journal of the Electrochemical Society. 142: 606-609. DOI: 10.1149/1.2044108 |
1 |
|
| 1995 |
Suntharalingam V, Fonash SJ. Electrically reversible depassivation/passivation mechanism in polycrystalline silicon Applied Physics Letters. 1400. DOI: 10.1063/1.116093 |
1 |
|
| 1995 |
Awadelkarim OO, Fonash SJ, Mikulan PI, Ozaita M, Chan YD. Hydrogen and processing damage in CMOS device reliability: defect passivation and depassivation during plasma exposures and subsequent annealing Microelectronic Engineering. 28: 47-50. DOI: 10.1016/0167-9317(95)00013-X |
1 |
|
| 1994 |
Gu T, Awadelkarim OO, Fonash SJ, Rembetski JF, Chan YD. Effect of Plasma Etching Edge-Type Exposures on Si Substrates: A Correlation Between Carrier Lifetime and Etch-Induced Defect States Journal of the Electrochemical Society. 141: 3230-3234. DOI: 10.1149/1.2059308 |
1 |
|
| 1994 |
Yin A, Fonash SJ. Oxygen-plasma-enhanced crystallization of a-Si:H films on glass Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 12: 1237-1240. DOI: 10.1116/1.579301 |
1 |
|
| 1994 |
Yin A, Fonash SJ. High-Performance P-Channel Poly-Si TFT's Using Electron Cyclotron Resonance Hydrogen Plasma Passivation Ieee Electron Device Letters. 15: 502-503. DOI: 10.1109/55.338417 |
1 |
|
| 1994 |
Gu T, Awadelkarim OO, Fonash SJ, Chan YD. Degradation of Submicron N-Channel MOSFET Hot Electron Reliability due to Edge Damage from Polysilicon Gate Plasma Etching Ieee Electron Device Letters. 15: 396-398. DOI: 10.1109/55.320980 |
1 |
|
| 1994 |
Awadelkarim OO, Mikulan PI, Gu T, Fonash SJ, Ditizio RA. Hydrogen Permeation, Si Defect Generation, and Their Interaction During CHF3/02 Contact Etching Ieee Electron Device Letters. 15: 85-87. DOI: 10.1109/55.285394 |
1 |
|
| 1994 |
Nickel NH, Yin A, Fonash SJ. Influence of hydrogen and oxygen plasma treatments on grain-boundary defects in polycrystalline silicon Applied Physics Letters. 65: 3099-3101. DOI: 10.1063/1.112449 |
1 |
|
| 1994 |
Suntharalingam V, Fortmann CM, Fonash SJ, Rubinelli FA. P/I interface layer in amorphous silicon solar cells; a numerical modeling study Conference Record of the Ieee Photovoltaic Specialists Conference. 1: 618-621. |
1 |
|
| 1994 |
Hou J, Xi J, Kampas F, Bae S, Fonash SJ. Non-local recombination in "Tunnel junctions" of multijunction amorphous Si alloy solar cells Materials Research Society Symposium Proceedings. 336: 717-722. |
1 |
|
| 1993 |
Awadelkarim OO, Rembetski JF, Chan YD, Gu T, Ditizio RA, Mikulan PI, Fonash SJ. Creation of Deep Gap States in Si During Cl2Or Hbr Plasma Etch Exposures Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 11: 1332-1336. DOI: 10.1116/1.578549 |
1 |
|
| 1993 |
Gu T, Rembetski JF, Aum P, Reinhardt KA, Chan YD, Ditizio RA, Awadefkarim OO, Fonash SJ. Reactive Ion Etching Induced Damage to SiO2and SiO2-Si Interfaces in Poiycrystaiiine Si Overetch Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 11: 1323-1326. DOI: 10.1116/1.578547 |
1 |
|
| 1993 |
Rubinelli FA, Hou JY, Fonash SJ. Bias-voltage- and bias-light-dependent high photocurrent gains in amorphous silicon Schottky barriers Journal of Applied Physics. 73: 2548-2554. DOI: 10.1063/1.353089 |
1 |
|
| 1993 |
Liu G, Fonash SJ. Polycrystalline silicon thin film transistors on Corning 7059 glass substrates using short time, low-temperature processing Applied Physics Letters. 62: 2554-2556. DOI: 10.1063/1.109294 |
1 |
|
| 1993 |
Awadelkarim OO, Gu T, Mikulan PI, Ditizio RA, Fonash SJ, Reinhardt KA, Chan YD. Electronic states created in p-Si subjected to plasma etching: The role of inherent impurities, point defects, and hydrogen Applied Physics Letters. 62: 958-960. DOI: 10.1063/1.108532 |
1 |
|
| 1993 |
Hou J, Fonash SJ. New tool for multijunction cell diagnostics QE measurements under AM1 bias light Conference Record of the Ieee Photovoltaic Specialists Conference. 891-895. |
1 |
|
| 1993 |
Bae S, Hou J, Suntharalingam V, Fonash SJ. Payback assessment for materials development for the low-gap unit of a multi-junction cell: a numerical modeling study Conference Record of the Ieee Photovoltaic Specialists Conference. 1011-1015. |
1 |
|
| 1993 |
Mikulan PJ, Koo TT, Awadelkarim OO, Fonash SJ. Oxide degradation resulting from photoresist ashing Materials Research Society Symposium Proceedings. 309: 61-66. |
1 |
|
| 1992 |
Ditizio RA, Fonash SJ, Hseih BC. Examination of the optimization of thin film transistor passivation with hydrogen electron cyclotron resonance plasmas Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 10: 59-65. DOI: 10.1116/1.578150 |
1 |
|
| 1992 |
Arch JK, Fonash SJ. Using reverse bias currents to differentiate between bulk degradation and interfacial degradation in hydrogenated amorphous silicon p-i-n structures Journal of Applied Physics. 72: 4483-4485. DOI: 10.1063/1.352337 |
1 |
|
| 1992 |
Smith JH, Fonash SJ. Assessment of density of states extraction from the space charge limited current measurement: A numerical simulation Journal of Applied Physics. 72: 5305-5310. DOI: 10.1063/1.352015 |
1 |
|
| 1992 |
Rubinelli FA, Arch JK, Fonash SJ. Effect of contact barrier heights on a-Si:H p-i-n detector and solar-cell performance Journal of Applied Physics. 72: 1621-1630. DOI: 10.1063/1.351679 |
1 |
|
| 1992 |
Grot SA, Ditizio RA, Gildenblat GS, Badzian AR, Fonash SJ. Oxygen based electron cyclotron resonance etching of semiconducting homoepitaxial diamond films Applied Physics Letters. 61: 2326-2328. DOI: 10.1063/1.108232 |
1 |
|
| 1992 |
Hou JY, Fonash SJ. Quantum efficiencies greater than unity: A computer study of a photogating effect in amorphous silicon p-i-n devices Applied Physics Letters. 61: 186-188. DOI: 10.1063/1.108213 |
1 |
|
| 1992 |
Arch JK, Fonash SJ. Origins of reverse bias leakage currents in hydrogenated amorphous silicon p-i-n detector structures Applied Physics Letters. 60: 757-759. DOI: 10.1063/1.106560 |
1 |
|
| 1992 |
Hou JY, Arch JK, Fonash SJ, Wiedeman S, Bennett M. An examination of the 'tunnel junctions' in triple junction a-Si:H based solar cells: Modeling and effects on performance Conference Record of the Ieee Photovoltaic Specialists Conference. 2: 1260-1264. |
1 |
|
| 1992 |
Malone CT, Nicque JL, Fonash SJ, Wronski CR, Bennett M. Effect of light induced defects on the quantum efficiency of amorphous silicon Schottky barrier solar cell structures Conference Record of the Ieee Photovoltaic Specialists Conference. 2: 1219-1224. |
1 |
|
| 1991 |
Liu G, Fonash SJ. Low thermal budget poly-si thin film transistors on glass Japanese Journal of Applied Physics. 30: L269-L271. DOI: 10.1143/JJAP.30.L269 |
1 |
|
| 1991 |
Smith JH, Fonash SJ, Steer KM, Miller TF. Numerical Modeling of Two-Dimensional Device Structures Using Brandt’s Multilevel Acceleration Scheme: Application to Poisson’s Equation Ieee Transactions On Computer-Aided Design of Integrated Circuits and Systems. 10: 822-824. DOI: 10.1109/43.137510 |
1 |
|
| 1991 |
Arch JK, Rubinelli FA, Hou JY, Fonash SJ. Computer analysis of the role of p-layer quality, thickness, transport mechanisms, and contact barrier height in the performance of hydrogenated amorphous silicon p-i-n solar cells Journal of Applied Physics. 69: 7057-7066. DOI: 10.1063/1.347645 |
1 |
|
| 1991 |
McElheny PJ, Chatterjie P, Fonash SJ. Collection efficiency of a-Si:H Schottky barriers: A computer study of the sensitivity to material and device parameters Journal of Applied Physics. 69: 7674-7688. DOI: 10.1063/1.347540 |
1 |
|
| 1991 |
Kakkad R, Fonash SJ, Weideman S. Highly conductive ultrathin crystalline Si layers by thermal crystallization of amorphous Si Applied Physics Letters. 59: 3309-3311. DOI: 10.1063/1.105715 |
1 |
|
| 1991 |
Tran NT, Keyes MP, Shiffman S, Liu G, Fonash SJ. Comparison of different processes in the fabrication of crystallized amorphous silicon thin film transistors Conference On Solid State Devices and Materials. 617-619. |
1 |
|
| 1990 |
Heddleson JM, Fonash SJ, Horn MW. Evolution of Damage, Dopant Deactivation, and Hydrogen-Related Effects in Dry Etch Silicon as a Function of Annealing History Journal of the Electrochemical Society. 137: 1960-1964. DOI: 10.1149/1.2086839 |
1 |
|
| 1990 |
Fonash SJ. An Overview of Dry Etching Damage and Contamination Effects Journal of the Electrochemical Society. 137: 3885-3892. DOI: 10.1149/1.2086322 |
1 |
|
| 1990 |
Arch JK, Fonash SJ. Computer simulation of actual and Kelvin-probe-measured potential profiles: Application to amorphous films Journal of Applied Physics. 68: 591-600. DOI: 10.1063/1.346812 |
1 |
|
| 1990 |
Chatterjie P, McElheny PJ, Fonash SJ. Influence of illumination conditions on the spectral response of hydrogenated amorphous silicon Schottky barrier structures Journal of Applied Physics. 67: 3803-3809. DOI: 10.1063/1.345027 |
1 |
|
| 1990 |
Ditizio RA, Liu G, Fonash SJ, Hseih BC, Greve DW. Short time electron cyclotron resonance hydrogenation of polycrystalline silicon thin-film transistor structures Applied Physics Letters. 56: 1140-1142. DOI: 10.1063/1.102543 |
1 |
|
| 1990 |
McElheny PJ, Fonash SJ. Sensitivity of the spectral response of a-Si:H Schottky barriers to the density of states profile: A computer simulation Conference Record of the Ieee Photovoltaic Specialists Conference. 2: 1540-1543. |
1 |
|
| 1990 |
Liu G, Fonash SJ. Low thermal budget poly-Si thin film transistors in glass Conference On Solid State Devices and Materials. 963-965. |
1 |
|
| 1990 |
Lee S, Arch JK, Fonash SJ, Wronski CR. The mobility gaps in a-Si:H and its effects on solar cell performance Conference Record of the Ieee Photovoltaic Specialists Conference. 2: 1624-1629. |
1 |
|
| 1990 |
Hou JY, Arch JK, Fonash SJ. Computer modeling of a-SiC:H/a-Si:H heterojunction solar cell performance as a function of the apportionment of the bandgap discontinuity Conference Record of the Ieee Photovoltaic Specialists Conference. 2: 1535-1539. |
1 |
|
| 1990 |
Arch JK, Rubinelli FA, Hou JY, Fonash SJ. First principles computer model showing the effect of p-layer thickness and front contact barrier height on the performance of a-Si:H p-i-n solar cells Conference Record of the Ieee Photovoltaic Specialists Conference. 2: 1636-1641. |
1 |
|
| 1990 |
McElheny PJ, Nag SS, Fonash SJ, Wronski CR, Bennett M, Arya R. Role of film thickness in amorphous silicon solar cell characterization Conference Record of the Ieee Photovoltaic Specialists Conference. 2: 1459-1464. |
1 |
|
| 1989 |
Huang CL, Gildenblat GS, Fonash SJ. Temperature dependence of contact resistance in noble metal/high-Tc superconductor systems Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 7: 3371-3372. DOI: 10.1116/1.576152 |
1 |
|
| 1989 |
Lau WS, Fonash SJ, Kanicki J. Stability of electrical properties of nitrogen-rich, silicon-rich, and stoichiometric silicon nitride films Journal of Applied Physics. 66: 2765-2767. DOI: 10.1063/1.344202 |
1 |
|
| 1989 |
Kakkad R, Smith J, Lau WS, Fonash SJ, Kerns R. Crystallized Si films by low-temperature rapid thermal annealing of amorphous silicon Journal of Applied Physics. 65: 2069-2072. DOI: 10.1063/1.342851 |
1 |
|
| 1989 |
Liu G, Fonash SJ. Selective area crystallization of amorphous silicon films by low-temperature rapid thermal annealing Applied Physics Letters. 55: 660-662. DOI: 10.1063/1.101814 |
1 |
|
| 1989 |
Kakkad R, Liu G, Fonash SJ. Low temperature selective crystallization of amorphous silicon Journal of Non-Crystalline Solids. 115: 66-68. DOI: 10.1016/0022-3093(89)90362-1 |
1 |
|
| 1988 |
Fonash SJ, Mu XC, Chakravarti S, Rathbun LC. RECOVERY OF Si SURFACES SUBJECTED TO REACTIVE ION ETCHING USING RAPID THERMAL ANNEALING Journal of the Electrochemical Society. 135: 1037-1038. DOI: 10.1149/1.2095768 |
1 |
|
| 1988 |
McElheny PJ, Arch JK, Lin HS, Fonash SJ. Range of validity of the surface-photovoltage diffusion length measurement: A computer simulation Journal of Applied Physics. 64: 1254-1265. DOI: 10.1063/1.341843 |
1 |
|
| 1987 |
McElheny PJ, Arch JK, Fonash SJ. Assessment of the surface-photovoltage diffusion-length measurement Applied Physics Letters. 51: 1611-1613. DOI: 10.1063/1.98571 |
1 |
|
| 1987 |
Horn MW, Heddleson JM, Fonash SJ. Permeation of hydrogen into silicon during low-energy hydrogen ion beam bombardment Applied Physics Letters. 51: 490-492. DOI: 10.1063/1.98376 |
1 |
|
| 1987 |
Lau WS, Fonash SJ. Highly transparent and conducting zinc oxide films deposited by activated reactive evaporation Journal of Electronic Materials. 16: 141-149. DOI: 10.1007/BF02655478 |
1 |
|
| 1986 |
Ringel SA, Mu XC, Fonash SJ, Ashok S. A study of target heating in low-energy ion-beam processing Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 4: 2385-2388. DOI: 10.1116/1.574082 |
1 |
|
| 1986 |
Singh R, Fonash SJ, Rohatgi A. Interaction of low-energy implanted atomic H with slow and fast diffusing metallic impurities in Si Applied Physics Letters. 49: 800-802. DOI: 10.1063/1.97551 |
1 |
|
| 1986 |
Mu XC, Fonash SJ, Singh R. Observation of boron acceptor neutralization in silicon produced by CF 4 reactive ion etching or Ar ion beam etching Applied Physics Letters. 49: 67-69. DOI: 10.1063/1.97354 |
1 |
|
| 1986 |
Mu XC, Fonash SJ, Rohatgi A, Rieger J. Comparison of the damage and contamination produced by CF4 and CF4/H2 reactive ion etching: The role of hydrogen Applied Physics Letters. 48: 1147-1149. DOI: 10.1063/1.96452 |
1 |
|
| 1986 |
Mu XC, Fonash SJ, Oehrlein GS, Chakravarti SN, Parks C, Keller J. A study of CClF3/H2 reactive ion etching damage and contamination effects in silicon Journal of Applied Physics. 59: 2958-2967. DOI: 10.1063/1.336934 |
1 |
|
| 1986 |
Rohatgi A, Meier DL, Rai-Choudhury P, Fonash SJ, Singh R. Effect of low-energy hydrogen ion implantation on dendritic web silicon solar cells Journal of Applied Physics. 59: 4167-4171. DOI: 10.1063/1.336676 |
1 |
|
| 1986 |
Lau WS, Fonash SJ. Highly conducting transparent undoped indium oxide films deposited below 100°C by activated reactive evaporation Journal of Electronic Materials. 15: 117-123. DOI: 10.1007/BF02655324 |
1 |
|
| 1986 |
Fonash SJ, Li Z. SCHOTTKY-BARRIER DIODE AND METAL-OXIDE-SEMICONDUCTOR CAPACITOR GAS SENSORS: COMPARISON AND PERFORMANCE Acs Symposium Series. 177-202. |
1 |
|
| 1985 |
Mu XC, Fonash SJ. High-Barrier Schottky Diodes on P-Type Silicon Due To Dry-Etching Damage Ieee Electron Device Letters. 6: 410-412. DOI: 10.1109/EDL.1985.26173 |
1 |
|
| 1985 |
Fonash SJ, Li Z, O'Leary MJ. An extremely sensitive heterostructure for parts per million detection of hydrogen in oxygen Journal of Applied Physics. 58: 4415-4419. DOI: 10.1063/1.335532 |
1 |
|
| 1985 |
Mu XC, Fonash SJ, Yang BY, Vedam K, Rohatgi A, Rieger J. Ar ion beam and CCl4 reactive ion etching: A comparison of etching damage and of damage passivation by hydrogen Journal of Applied Physics. 58: 4282-4291. DOI: 10.1063/1.335513 |
1 |
|
| 1985 |
Davis RJ, Climent A, Fonash SJ. Dependence of low energy ion beam exposure effects in silicon on ion species, exposure history, and material properties Nuclear Inst. and Methods in Physics Research, B. 7: 831-835. DOI: 10.1016/0168-583X(85)90478-1 |
1 |
|
| 1985 |
Climent A, Fonash SJ, Ponpon JP. SILICIDE FORMATION STUDY ON LOW-ENERGY ION-BEAM PROCESSED SILICON Vacuum. 37: 486-487. DOI: 10.1016/0042-207X(87)90344-7 |
1 |
|
| 1985 |
Bhat S, Ashok S, Fonash SJ, Tongson L. Reactive ion beam deposition of aluminum nitride thin films Journal of Electronic Materials. 14: 405-418. DOI: 10.1007/BF02654015 |
1 |
|
| 1985 |
Fonash SJ. DAMAGE EFFECTS IN DRY ETCHING Solid State Technology. 28: 201-205. |
1 |
|
| 1985 |
Fonash SJ, Rothwarf A. HETEROJUNCTION SOLAR CELLS Curr Top in Photovoltaics. 1-39. |
1 |
|
| 1985 |
Li Z, Fonash SJ. HIGH SENSITIVITY SOLID STATE SENSOR FOR H//2 DETECTION IN OXYGEN-RICH AMBIENTS AT ROOM TEMPERATURE Technical Digest - International Electron Devices Meeting. 129-132. |
1 |
|
| 1985 |
Li Z, Restaino D, Fonash SJ. ROLE OF OXYGEN IN THE SENSING MECHANISM OF Pd GATE SOLID STATE SENSOR Electrochemical Society Extended Abstracts. 85: 425-426. |
1 |
|
| 1984 |
Climent A, Fonash SJ. Growth and electrical characteristics of palladium silicide contacts on dry-etched silicon surfaces Journal of Applied Physics. 56: 1063-1069. DOI: 10.1063/1.334075 |
1 |
|
| 1984 |
Singh R, Fonash SJ, Rohatgi A, Choudhury PR, Gigante J. A low-temperature process for annealing extremely shallow As +-implanted n+/p junctions in silicon Journal of Applied Physics. 55: 867-870. DOI: 10.1063/1.333183 |
1 |
|
| 1984 |
Fonash SJ. SENSOR PHENOMENA Electrochemical Society Extended Abstracts. 84: 785. |
1 |
|
| 1984 |
Climent A, Wang JS, Fonash SJ. EFFECT OF LOW ENERGY HYDROGEN IMPLANTS ON DAMAGE CAUSED BY ARGON ION BEAM ETCHING Materials Research Society Symposia Proceedings. 25: 613-618. |
1 |
|
| 1984 |
Zheng Li, Restaino D, Fonash SJ. RESPONSE TIME AND STABILITY STUDY OF Pd-MOS HYDROGEN SENSORS Electrochemical Society Extended Abstracts. 84: 798. |
1 |
|
| 1984 |
Singh R, Fonash SJ, Rohatgi A, Rai Choudhury P. LOW ENERGY HYDROGEN IMPLANTATION PASSIVATION FOR WEB SILICON Commission of the European Communities, (Report) Eur. 1064-1067. |
1 |
|
| 1984 |
Davis RJ, Singh R, Fonash SJ, Caplan PJ, Poindexter EH. EFFECT OF BEAM SPECIES AND ANNEAL HISTORY ON SILICON SURFACE DAMAGE INDUCED BY ION BEAM ETCHING Materials Research Society Symposia Proceedings. 25: 607-612. |
1 |
|
| 1983 |
Wang JS, Fonash SJ, Ashok S. Passivation of Dry-Etching Damage Using Low-Energy Hydrogen Implants Ieee Electron Device Letters. 4: 432-435. DOI: 10.1109/EDL.1983.25792 |
1 |
|
| 1983 |
Singh R, Fonash SJ, Caplan PJ, Poindexter EH. Effect of beam energy and anneal history on trivalently bonded silicon defect centers induced by ion beam etching Applied Physics Letters. 43: 502-504. DOI: 10.1063/1.94367 |
1 |
|
| 1983 |
Fonash SJ. A reevaluation of the meaning of capacitance plots for Schottky-barrier- type diodes Journal of Applied Physics. 54: 1966-1975. DOI: 10.1063/1.332251 |
1 |
|
| 1982 |
Fonash SJ, Ashok S, Singh R. Effect of neutral ion beam sputtering and etching on silicon Thin Solid Films. 90: 231-235. DOI: 10.1016/0040-6090(82)90367-4 |
1 |
|
| 1982 |
Aggarwal MD, Ashok S, Fonash SJ. Characterization of Si-N films prepared by reactive ion beam sputtering Journal of Electronic Materials. 11: 491-504. DOI: 10.1007/BF02654685 |
1 |
|
| 1982 |
Lester PA, Singh R, Rice DA, Pangborn RN, Ashok S, Fonash SJ. CHEMICAL AND ION BEAM ETCH STUDIES OF POLYCRYSTALLINE SILICON Materials Research Society Symposia Proceedings. 5: 199-204. |
1 |
|
| 1981 |
Ruths PF, Ashok S, Fonash SJ, Ruths JM. A Study of Pd/Si MIS Schottky Barrier Diode Hydrogen Detector Ieee Transactions On Electron Devices. 28: 1003-1009. DOI: 10.1109/T-ED.1981.20475 |
1 |
|
| 1981 |
Ashok S, Fonash SJ, Singh R, Wiley P. On Resolving the Anomaly of Indium-tin Oxide Silicon Junctions Ieee Electron Device Letters. 2: 184-186. DOI: 10.1109/EDL.1981.25392 |
1 |
|
| 1981 |
Fonash SJ, Ashok S, Singh R. Effect of ion-beam sputter damage on Schottky barrier formation in silicon Applied Physics Letters. 39: 423-425. DOI: 10.1063/1.92738 |
1 |
|
| 1981 |
Fonash SJ, Huston H, Ashok S. Conducting mis diode gas detectors: the Pd/SiOx/Si hydrogen sensor Sensors and Actuators. 2: 363-369. DOI: 10.1016/0250-6874(81)80056-X |
1 |
|
| 1981 |
Fonash SJ, Ashok S. On the pinhole model for MIS diodes Solid State Electronics. 24: 1075-1076. DOI: 10.1016/0038-1101(81)90138-6 |
1 |
|
| 1980 |
Sharma PP, Anthony TC, Ashok S, Fonash SJ, Tongson LL. Si and GaAs SIS heterostructure solar cells using spray-deposited ITO Japanese Journal of Applied Physics. 19: 551-556. DOI: 10.7567/JJAPS.19S1.551 |
1 |
|
| 1980 |
Kardauskas MJ, Fonash SJ, Ashok S, Krishnaswamy SV, Messier RF. SPUTTERED IRON OXIDE/SILICON HETEROSTRUCTURES Journal of Vacuum Science &Amp; Technology. 18: 376-378. DOI: 10.1116/1.570789 |
1 |
|
| 1980 |
Ashok S, Fonash SJ, Sharma PP. Spray-Deposited ITO-Silicon SIS Heterojunction Solar Cells Ieee Transactions On Electron Devices. 27: 725-730. DOI: 10.1109/T-ED.1980.19928 |
1 |
|
| 1980 |
Ashok S, Lester A, Fonash SJ. Evidence of Space-Charge-Limited Current in Amorphous Silicon Schottky Diodes Ieee Electron Device Letters. 1: 200-202. DOI: 10.1109/EDL.1980.25288 |
1 |
|
| 1980 |
Fonash SJ. Photovoltaic devices Critical Reviews in Solid State and Materials Sciences. 9: 107-209. DOI: 10.1080/10408438008243571 |
1 |
|
| 1980 |
Kar S, Ashok S, Fonash SJ. Evidence of tunnel-assisted transport in nondegenerate MOS and semiconductor-oxide-semiconductor diodes at room temperature Journal of Applied Physics. 51: 3417-3421. DOI: 10.1063/1.328056 |
1 |
|
| 1980 |
Fonash SJ. General formulation of the current-voltage characteristic of a p-n heterojunction solar cell Journal of Applied Physics. 51: 2115-2118. DOI: 10.1063/1.327883 |
1 |
|
| 1980 |
Fonash SJ, Ashok S. HETEROJUNCTION SOLAR CELL DESIGN AND EVALUATION Conference Record of the Ieee Photovoltaic Specialists Conference. 591-595. |
1 |
|
| 1980 |
Lester P, Fonash SJ, Ashok S. PERFORMANCE STUDY OF p** plus /n AND n** plus /p SOLAR CELL STRUCTURES ON POLYCRYSTALLINE MATERIAL Conference Record of the Ieee Photovoltaic Specialists Conference. 82-85. |
1 |
|
| 1980 |
Kar S, Jain S, Heller A, Ashok S, Fonash SJ. ROLE OF INTERFACE STATES IN PHOTOELECTROCHEMICAL CELLS Technical Digest - International Electron Devices Meeting. 538-544. |
1 |
|
| 1979 |
Fonash SJ, Ashok S. An additional source of photovoltage in photoconductive materials Applied Physics Letters. 35: 535-537. DOI: 10.1063/1.91199 |
1 |
|
| 1979 |
Tongson LL, Knox BE, Sullivan TE, Fonash SJ. Comparative study of chemical and polarization characteristics of Pd/Si and Pd/SiOx/Si schottky-barrier-type devices Journal of Applied Physics. 50: 1535-1537. DOI: 10.1063/1.326106 |
1 |
|
| 1979 |
Fonash SJ. Band structure and photocurrent collection in crystalline and polycrystalline p-n heterojunction solar cells Solid State Electronics. 22: 907-910. DOI: 10.1016/0038-1101(79)90060-1 |
1 |
|
| 1979 |
Fonash SJ, Ashok S. MODEL FOR THE I-V CHARACTERISTICS OF ELECTROCHEMICAL PHOTOVOLTAIC DEVICES Advances in Chemistry Series. 446-449. |
1 |
|
| 1979 |
Fonash SJ, Fishkorn G, Sullivan TE, Tongson LL, Knox BE. UNIQUE PROBLEM AREAS IN M-I-S SOLAR CELL STRUCTURES National Bureau of Standards, Special Publication. 63-68. |
1 |
|
| 1978 |
Fonash SJ, Sullivan TE, Childs R, Ruths J. TRANSPORT AND ULTRA-THIN INSULATOR STUDIES FOR MIS SOLAR CELL STRUCTURES ON SILICON AND GALLIUM ARSENIDE Conference Record of the Ieee Photovoltaic Specialists Conference. 645-650. |
1 |
|
| 1978 |
Childs RB, Ruths JM, Sullivan TE, Fonash SJ. EFFECTS OF ULTRATHIN OXIDES IN CONDUCTING MIS STRUCTURES ON GaAs J Vac Sci Technol. 15: 1397-1401. |
1 |
|
| 1977 |
Fonash SJ. Theory of capacitance and conductance behavior of Schottky-barrier and conducting M-I-S diodes with interface traps Journal of Applied Physics. 48: 3953-3958. DOI: 10.1063/1.324271 |
1 |
|
| 1976 |
Fonash SJ. Outline and comparison of the possible effects present in a metal-thin-film-insulator-semiconductor Journal of Applied Physics. 47: 3597-3602. DOI: 10.1063/1.323164 |
1 |
|
| 1976 |
Fonash SJ. Metal-insulator-semiconductor solar cells: Theory and experimental results Thin Solid Films. 36: 387-392. DOI: 10.1016/0040-6090(76)90042-0 |
1 |
|
| 1975 |
Roger JA, Dupuy CHS, Fonash SJ. Evidence for interfacial space-charge regions in electron-beam-evaporated SiO Journal of Applied Physics. 46: 3102-3105. DOI: 10.1063/1.322006 |
1 |
|
| 1975 |
Fonash SJ. The role of the interfacial layer in metal-semiconductor solar cells Journal of Applied Physics. 46: 1286-1289. DOI: 10.1063/1.321694 |
1 |
|
| 1975 |
Fonash SJ, Roger JA, Dupuy C. Role of interfaces in determining the electrical properties of metal-oxide-metal structures Journal of Solid State Chemistry. 12: 238. |
1 |
|
| 1974 |
Fonash SJ, Roger JA, Dupuy CHS. ac equivalent circuits for MIM structures Journal of Applied Physics. 45: 2907-2910. DOI: 10.1063/1.1663699 |
1 |
|
| 1974 |
Fonash SJ, Roger JA, Pivot J, Cachard A. AC properties of biased MIM structures Journal of Applied Physics. 45: 1223-1232. DOI: 10.1063/1.1663393 |
1 |
|
| 1974 |
Fonash SJ. Comments on barrier changes in stressed metal-semiconductor contacts Journal of Applied Physics. 45: 496-498. DOI: 10.1063/1.1663013 |
1 |
|
| 1973 |
Fonash SJ. Effects of stress on metal-oxide-semiconductor structures Journal of Applied Physics. 44: 4607-4615. DOI: 10.1063/1.1662009 |
1 |
|
| 1973 |
Fonash SJ. The effect of stress on metal semiconductor junctions Solid State Electronics. 16: 253-263. DOI: 10.1016/0038-1101(73)90035-X |
1 |
|
| 1972 |
Fonash SJ. Current transport in metal semiconductor contacts-a unified approach Solid State Electronics. 15: 783-787. DOI: 10.1016/0038-1101(72)90099-8 |
1 |
|
| 1970 |
Sharma SP, Fonash SJ, Schrenk GL. The electron transfer process in field ionization Surface Science. 23: 30-57. DOI: 10.1016/0039-6028(70)90004-X |
1 |
|
| 1969 |
Fonash SJ, Schrenk GL. Fermi-surface structure and field ionization Physical Review. 180: 649-657. DOI: 10.1103/PhysRev.180.649 |
1 |
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| Show low-probability matches. |