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Eleftherios Iliopoulos, Ph.D. - Publications

Affiliations: 
2005- Physics University of Crete, Greece 
Area:
Electronics and Electrical Engineering, Condensed Matter Physics, Materials Science Engineering
Website:
http://www.physics.uoc.gr/en/faculty/e.iliopoulos
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88 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Kazazis SA, Papadomanolaki E, Iliopoulos E. Tuning carrier localization in In-rich InGaN alloys: Correlations between growth kinetics and optical properties Journal of Applied Physics. 127: 225701. DOI: 10.1063/1.5128448  0.772
2018 Kazazis SA, Papadomanolaki E, Iliopoulos E. Polarization-Engineered InGaN/GaN Solar Cells: Realistic Expectations for Single Heterojunctions Ieee Journal of Photovoltaics. 8: 118-124. DOI: 10.1109/Jphotov.2017.2775164  0.763
2018 Dimitrakopulos GP, Bazioti C, Papadomanolaki E, Filintoglou K, Katsikini M, Arvanitidis J, Iliopoulos E. Evolution of stratification in high-alloy content InGaN epilayers grown on (0001) AlN Materials Science and Technology. 34: 1565-1574. DOI: 10.1080/02670836.2018.1506727  0.831
2018 Kazazis SA, Papadomanolaki E, Androulidaki M, Kayambaki M, Iliopoulos E. Optical properties of InGaN thin films in the entire composition range Journal of Applied Physics. 123: 125101. DOI: 10.1063/1.5020988  0.785
2016 Kazazis SA, Papadomanolaki E, Androulidaki M, Tsagaraki K, Kostopoulos A, Aperathitis E, Iliopoulos E. Effect of rapid thermal annealing on polycrystalline InGaN thin films deposited on fused silica substrates Thin Solid Films. 611: 46-51. DOI: 10.1016/J.Tsf.2016.04.045  0.786
2016 Eftychis S, Kruse J, Koukoula T, Kehagias T, Komninou P, Adikimenakis A, Tsagaraki K, Androulidaki M, Tzanetakis P, Iliopoulos E, Georgakilas A. Understanding the effects of Si (111) nitridation on the spontaneous growth and properties of GaN nanowires Journal of Crystal Growth. 442: 8-13. DOI: 10.1016/J.Jcrysgro.2016.02.028  0.445
2016 Papadomanolaki E, Bazioti C, Kazazis SA, Androulidaki M, Dimitrakopulos GP, Iliopoulos E. Molecular beam epitaxy of thick InGaN(0001) films: Effects of substrate temperature on structural and electronic properties Journal of Crystal Growth. 437: 20-25. DOI: 10.1016/J.Jcrysgro.2015.12.012  0.796
2015 Bazioti C, Papadomanolaki E, Kehagias T, Walther T, Smalc-Koziorowska J, Pavlidou E, Komninou P, Karakostas T, Iliopoulos E, Dimitrakopulos GP. Defects, strain relaxation, and compositional grading in high indium content InGaN epilayers grown by molecular beam epitaxy Journal of Applied Physics. 118. DOI: 10.1063/1.4933276  0.808
2015 Bazioti C, Papadomanolaki E, Kehagias T, Androulidaki M, Dimitrakopulos GP, Iliopoulos E. Structure and strain variation in InGaN interlayers grown by PAMBE at low substrate temperatures Physica Status Solidi (B) Basic Research. 252: 1155-1162. DOI: 10.1002/Pssb.201451597  0.81
2014 Gkrana V, Filintoglou K, Arvanitidis J, Christofilos D, Bazioti C, Dimitrakopulos GP, Katsikini M, Ves S, Kourouklis GA, Zoumakis N, Georgakilas A, Iliopoulos E. Raman and photoluminescence mapping of InxGa1-xN (x ∼0.4) at high pressure: Optical determination of composition and stress Applied Physics Letters. 105. DOI: 10.1063/1.4895023  0.347
2013 Daskalakis KS, Eldridge PS, Christmann G, Trichas E, Murray R, Iliopoulos E, Monroy E, Pelekanos NT, Baumberg JJ, Savvidis PG. All-dielectric GaN microcavity: Strong coupling and lasing at room temperature Applied Physics Letters. 102. DOI: 10.1063/1.4795019  0.375
2013 Itskos G, Xristodoulou X, Iliopoulos E, Ladas S, Kennou S, Neophytou M, Choulis S. Electronic and interface properties of polyfluorene films on GaN for hybrid optoelectronic applications Applied Physics Letters. 102. DOI: 10.1063/1.4792211  0.461
2013 Dimitrakis P, Normand P, Bonafos C, Papadomanolaki E, Iliopoulos E. GaN quantum-dots integrated in the gate dielectric of metal-oxide- semiconductor structures for charge-storage applications Applied Physics Letters. 102. DOI: 10.1063/1.4790439  0.79
2013 Dimitrakis P, Normand P, Ioannou-Sougleridis V, Bonafos C, Schamm-Chardon S, Benassayag G, Iliopoulos E. Quantum dots for memory applications Physica Status Solidi (a) Applications and Materials Science. 210: 1490-1504. DOI: 10.1002/Pssa.201300029  0.359
2012 Dimitrakis P, Normand P, Bonafos C, Papadomanolaki E, Iliopoulos E. GaN quantum dots as charge storage elements for memory devices Materials Research Society Symposium Proceedings. 1430: 29-34. DOI: 10.1557/Opl.2012.1091  0.35
2012 Kalaitzakis FG, Iliopoulos E, Konstantinidis G, Pelekanos NT. Monolithic integration of nitride-based transistor with Light Emitting Diode for sensing applications Microelectronic Engineering. 90: 33-36. DOI: 10.1016/J.Mee.2011.04.067  0.302
2012 Lotsari A, Dimitrakopulos GP, Kehagias T, Ajagunna AO, Iliopoulos E, Georgakilas A, Komninou P. Structural characterization of InN epilayers grown on r -plane sapphire by plasma-assisted MBE Physica Status Solidi (C) Current Topics in Solid State Physics. 9: 534-537. DOI: 10.1002/Pssc.201100389  0.493
2012 Ardali S, Tiras E, Gunes M, Balkan N, Ajagunna AO, Iliopoulos E, Georgakilas A. Determination of dislocation densities in InN Physica Status Solidi (C) Current Topics in Solid State Physics. 9: 997-1000. DOI: 10.1002/Pssc.201100079  0.309
2012 Tiras E, Tanisli M, Balkan N, Ardali S, Iliopoulos E, Georgakilas A. Determination of the carrier density dependent electron effective mass in InN using infrared and Raman spectra Physica Status Solidi (B) Basic Research. 249: 1235-1240. DOI: 10.1002/Pssb.201147500  0.333
2011 Trichas E, Pelekanos NT, Iliopoulos E, Monroy E, Tsagaraki K, Kostopoulos A, Savvidis PG. Bragg polariton luminescence from a GaN membrane embedded in all dielectric microcavity Applied Physics Letters. 98. DOI: 10.1063/1.3595481  0.358
2011 Katsikini M, Pinakidou F, Arvanitidis J, Paloura EC, Ves S, Komninou P, Bougrioua Z, Iliopoulos E, Moustakas TD. Comparison of Fe and Si doping of GaN: An EXAFS and Raman study Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 176: 723-726. DOI: 10.1016/J.Mseb.2011.02.028  0.595
2011 Gunes M, Balkan N, Tiras E, Ardali S, Ajagunna AO, Iliopoulos E, Georgakilas A. Superconductivity in MBE grown InN Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 1637-1640. DOI: 10.1002/Pssc.201000794  0.365
2011 Ardali S, Tiras E, Gunes M, Balkan N, Ajagunna AO, Iliopoulos E, Georgakilas A. Longitudinal polar optical phonons in InN/GaN single and double het- erostructures Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 1620-1624. DOI: 10.1002/Pssc.201000592  0.407
2011 Donmez O, Yilmaz M, Erol A, Ulug B, Arikan MC, Ulug A, Ajagunna AO, Iliopoulos E, Georgakilas A. Influence of high electron concentration on band gap and effective electron mass of InN Physica Status Solidi (B) Basic Research. 248: 1172-1175. DOI: 10.1002/Pssb.201000780  0.374
2010 Ajagunna AO, Iliopoulos E, Tsiakatouras G, Tsagaraki K, Androulidaki M, Georgakilas A. Epitaxial growth, electrical and optical properties of a -plane InN on r -plane sapphire Journal of Applied Physics. 107. DOI: 10.1063/1.3284086  0.535
2010 Di Forte Poisson MA, Sarazin N, Magis M, M.Tordjman, Di Persio J, Langer R, Iliopoulos E, Georgakilas A, Kominou P, Guziewicz M, Kaminska E, Piotrowska A, Gaquière C, Oualli M, Chartier E, et al. Lp MOCVD growth of InAlN/GaN HEMT heterostructure: Comparison of sapphire, bulk SiC and composite SiCopSiC substrates for HEMT device applications Physica Status Solidi (C) Current Topics in Solid State Physics. 7: 1317-1324. DOI: 10.1002/Pssc.200983114  0.464
2010 Dimitrakis P, Iliopoulos E, Normand P. Nanocrystal memory device utilizing GaN quantum dots by RF-MBD Materials Research Society Symposium Proceedings. 1250: 63-68.  0.356
2009 Sahonta SL, Dimitrakopulos GP, Kehagias T, Kioseoglou J, Adikimenakis A, Iliopoulos E, Georgakilas A, Kirmse H, Neumann W, Komninou P. Mechanism of compositional modulations in epitaxial InAlN films grown by molecular beam epitaxy Applied Physics Letters. 95. DOI: 10.1063/1.3184593  0.511
2009 Trichas E, Kayambaki M, Iliopoulos E, Pelekanos NT, Savvidis PG. Resonantly enhanced selective photochemical etching of GaN Applied Physics Letters. 94. DOI: 10.1063/1.3122932  0.493
2009 Adikimenakis A, Aretouli KE, Iliopoulos E, Kostopoulos A, Tsagaraki K, Konstantinidis G, Georgakilas A. High electron mobility transistors based on the AlN/GaN heterojunction Microelectronic Engineering. 86: 1071-1073. DOI: 10.1016/J.Mee.2009.02.004  0.438
2009 Vajpeyi AP, Ajagunna AO, Tsiakatouras G, Adikimenakis A, Iliopoulos E, Tsagaraki K, Androulidaki M, Georgakilas A. Spontaneous growth of III-nitride nanowires on Si by molecular beam epitaxy Microelectronic Engineering. 86: 812-815. DOI: 10.1016/J.Mee.2009.01.078  0.463
2009 Ajagunna AO, Adikimenakis A, Iliopoulos E, Tsagaraki K, Androulidaki M, Georgakilas A. InN films and nanostructures grown on Si (1 1 1) by RF-MBE Journal of Crystal Growth. 311: 2058-2062. DOI: 10.1016/J.Jcrysgro.2008.12.012  0.55
2009 Adikimenakis A, Sahonta SL, Dimitrakopulos GP, Domagala J, Kehagias T, Komninou P, Iliopoulos E, Georgakilas A. Effect of AlN interlayers in the structure of GaN-on-Si grown by plasma-assisted MBE Journal of Crystal Growth. 311: 2010-2015. DOI: 10.1016/J.Jcrysgro.2008.10.085  0.495
2008 Iliopoulos E, Adikimenakis A, Giesen C, Heuken M, Georgakilas A. Energy bandgap bowing of InAlN alloys studied by spectroscopic ellipsometry Applied Physics Letters. 92. DOI: 10.1063/1.2921783  0.42
2008 King PDC, Veal TD, Adikimenakis A, Lu H, Bailey LR, Iliopoulos E, Georgakilas A, Schaff WJ, McConville CF. Surface electronic properties of undoped InAlN alloys Applied Physics Letters. 92. DOI: 10.1063/1.2913765  0.353
2008 Trichas E, Xenogianni C, Kayambaki M, Tsotsis P, Iliopoulos E, Pelekanos NT, Savvidis PG. Selective photochemical etching of GaN films and laser lift-off for microcavity fabrication Physica Status Solidi (a) Applications and Materials Science. 205: 2509-2512. DOI: 10.1002/Pssa.200780215  0.499
2008 Dimitrakopulos GP, Komninou P, Kehagias T, Sahonta SL, Kioseoglou J, Vouroutzis N, Hausler I, Neumann W, Iliopoulos E, Georgakilas A, Karakostas T. Strain relaxation in AlN/GaN heterostructures grown by molecular beam epitaxy Physica Status Solidi (a) Applications and Materials Science. 205: 2569-2572. DOI: 10.1002/Pssa.200780137  0.386
2007 Lioudakis E, Iliopoulos E, Georgakilas A, Othonos A. Temporal evolution of effects of ultrafast carrier dynamics in In 0.33Ga0.67N: Above and near the bandgap Semiconductor Science and Technology. 22: 158-162. DOI: 10.1088/0268-1242/22/2/027  0.35
2007 Lioudakis E, Othonos A, Iliopoulos E, Tsagaraki K, Georgakilas A. Femtosecond carrier dynamics of Inx Ga1-x N thin films grown on GaN (0001): Effect of carrier-defect scattering Journal of Applied Physics. 102. DOI: 10.1063/1.2786610  0.391
2007 Kambilafka V, Voulgaropoulou P, Dounis S, Iliopoulos E, Androulidaki M, Tsagaraki K, Šály V, Ružinský M, Prokein P, Aperathitis E. The effect of nitrogen on the properties of zinc nitride thin films and their conversion into p-ZnO:N films Thin Solid Films. 515: 8573-8576. DOI: 10.1016/J.Tsf.2007.03.102  0.494
2007 Kambilafka V, Voulgaropoulou P, Dounis S, Iliopoulos E, Androulidaki M, Šály V, Ružinský M, Aperathitis E. Thermal oxidation of n-type ZnN films made by r f-sputtering from a zinc nitride target, and their conversion into p-type films Superlattices and Microstructures. 42: 55-61. DOI: 10.1016/J.Spmi.2007.04.038  0.466
2007 Dimakis E, Iliopoulos E, Kayambaki M, Tsagaraki K, Kostopoulos A, Konstantinidis G, Georgakilas A. Growth optimization of an electron confining InN/GaN quantum well heterostructure Journal of Electronic Materials. 36: 373-378. DOI: 10.1007/S11664-006-0041-0  0.444
2007 Dimakis E, Domagala J, Iliopoulos E, Adikimenakis A, Georgakilas A. Analysis of biaxial strain in InN(0001) epilayers grown by molecular beam epitaxy Physica Status Solidi (a) Applications and Materials Science. 204: 1996-1999. DOI: 10.1002/Pssa.200674890  0.408
2007 Alifragis Y, Volosirakis A, Chaniotakis NA, Konstantinidis G, Iliopoulos E, Georgakilas A. AlGaN/GaN high electron mobility transistor sensor sensitive to ammonium ions Physica Status Solidi (a) Applications and Materials Science. 204: 2059-2063. DOI: 10.1002/Pssa.200674885  0.308
2006 Dimakis E, Iliopoulos E, Tsagaraki K, Adikimenakis A, Georgakilas A. Biaxial strain and lattice constants of InN (0001) films grown by plasma-assisted molecular beam epitaxy Applied Physics Letters. 88. DOI: 10.1063/1.2202136  0.451
2006 Lioudakis E, Othonos A, Dimakis E, Iliopoulos E, Georgakilas A. Ultrafast carrier dynamics in Inx Ga1-x N (0001) epilayers: Effects of high fluence excitation Applied Physics Letters. 88. DOI: 10.1063/1.2190456  0.337
2006 Iliopoulos E, Zervos M, Adikimenakis A, Tsagaraki K, Georgakilas A. Properties of Si-doped GaN and AlGaN/GaN heterostructures grown by RF-MBE on high resistivity Fe-doped GaN Superlattices and Microstructures. 40: 313-319. DOI: 10.1016/J.Spmi.2006.09.024  0.481
2006 Dimakis E, Domagala JZ, Delimitis A, Komninou P, Adikimenakis A, Iliopoulos E, Georgakilas A. Structural properties of 10  μm thick InN grown on sapphire (0001) Superlattices and Microstructures. 40: 246-252. DOI: 10.1016/J.Spmi.2006.09.012  0.412
2006 Koufaki M, Sifakis M, Iliopoulos E, Pelekanos N, Modreanu M, Cimalla V, Ecke G, Aperathitis E. Optical emission spectroscopy during fabrication of indium-tin-oxynitride films by RF-sputtering Applied Surface Science. 253: 405-408. DOI: 10.1016/J.Apsusc.2006.06.023  0.448
2006 Dimakis E, Georgakilas A, Iliopoulos E, Tsagaraki K, Delimitis A, Komninou P, Kirmse H, Neumann W, Androulidaki M, Pelekanos NT. InN quantum dots grown on GaN (0001) by molecular beam epitaxy Physica Status Solidi (C) Current Topics in Solid State Physics. 3: 3983-3987. DOI: 10.1002/Pssc.200671613  0.395
2006 Androulidaki M, Pelekanos NT, Tsagaraki K, Dimakis E, Iliopoulos E, Adikimenakis A, Bellet-Amalric E, Jalabert D, Georgakilas A. Energy gaps and bowing parameters of InAlGaN ternary and quaternary alloys Physica Status Solidi (C) Current Topics in Solid State Physics. 3: 1866-1869. DOI: 10.1002/Pssc.200565280  0.319
2006 Arvanitidis J, Katsikini M, Ves S, Delimitis A, Kehagias T, Komninou P, Dimakis E, Iliopoulos E, Georgakilas A. Raman and transmission electron microscopy characterization of InN samples grown on GaN/Al2O3 by molecular beam epitaxy Physica Status Solidi (B) Basic Research. 243: 1588-1593. DOI: 10.1002/Pssb.200565193  0.485
2006 Dimakis E, Iliopoulos E, Tsagaraki K, Georgakilas A. Self-regulating mechanism of InN growth on GaN(0001) by molecular beam epitaxy; from nanostructures to films Physica Status Solidi (a) Applications and Materials Science. 203: 1686-1690. DOI: 10.1002/Pssa.200565404  0.463
2006 Iliopoulos E, Georgakilas A, Dimakis E, Adikimenakis A, Tsagaraki K, Androulidaki M, Pelekanos NT. InGaN(0001) alloys grown in the entire composition range by plasma assisted molecular beam epitaxy Physica Status Solidi (a) Applications and Materials Science. 203: 102-105. DOI: 10.1002/Pssa.200563509  0.534
2005 Dimakis E, Iliopoulos E, Tsagaraki K, Kehagias T, Komninou P, Georgakilas A. Heteroepitaxial growth of In-face InN on GaN (0001) by plasma-assisted molecular-beam epitaxy Journal of Applied Physics. 97. DOI: 10.1063/1.1923166  0.426
2005 Kehagias T, Delimitis A, Komninou P, Iliopoulos E, Dimakis E, Georgakilas A, Nouet G. Misfit accommodation of compact and columnar InN epilayers grown on Ga-face GaN (0001) by molecular-beam epitaxy Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1900310  0.544
2005 Dimakis E, Iliopoulos E, Tsagaraki K, Georgakilas A. Physical model of InN growth on Ga-face GaN (0001) by molecular-beam epitaxy Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1891292  0.413
2005 Dimakis E, Tsagaraki K, Iliopoulos E, Komninou P, Kehagias T, Delimitis A, Georgakilas A. Correlation between nucleation, morphology and residual strain of InN grown on Ga-face GaN (0 0 0 1) Journal of Crystal Growth. 278: 367-372. DOI: 10.1016/J.Jcrysgro.2005.01.034  0.556
2005 Iliopoulos E, Adikimenakis A, Dimakis E, Tsagaraki K, Konstantinidis G, Georgakilas A. Active nitrogen species dependence on radiofrequency plasma source operating parameters and their role in GaN growth Journal of Crystal Growth. 278: 426-430. DOI: 10.1016/J.Jcrysgro.2005.01.013  0.378
2005 Kioseoglou J, Béré A, Komninou P, Dimitrakopulos GP, Nouet G, Iliopoulos E, Serra A, Karakostas T. Atomic simulations and HRTEM observations of a Σ 18 tilt grain boundary in GaN Physica Status Solidi (a) Applications and Materials Science. 202: 799-803. DOI: 10.1002/Pssa.200461419  0.413
2005 Kehagias T, Iliopoulos E, Delimitis A, Nouet G, Dimakis E, Georgakilas A, Komninou P. Interfacial structure of MBE grown InN on GaN Physica Status Solidi (a) Applications and Materials Science. 202: 777-780. DOI: 10.1002/Pssa.200461343  0.53
2004 Dimakis E, Konstantinidis G, Tsagaraki K, Adikimenakis A, Iliopoulos E, Georgakilas A. The role of nucleation temperature in In-face InN-on-GaN(0001) growth by plasma-assisted molecular beam epitaxy Superlattices and Microstructures. 36: 497-507. DOI: 10.1016/J.Spmi.2004.09.010  0.515
2003 Downes JE, Smith KE, Matsuura AY, Lindau I, Iliopoulos E, Moustakas TD. Surface degradation of InxGa1-xN thin films by sputter-anneal processing: A scanning photoemission microscope study Journal of Applied Physics. 94: 5820-5825. DOI: 10.1063/1.1617356  0.594
2003 Iliopoulos E, Ludwig KF, Moustakas TD. Complex ordering in ternary wurtzite nitride alloys Journal of Physics and Chemistry of Solids. 64: 1525-1532. DOI: 10.1016/S0022-3697(03)00094-5  0.667
2002 Bhattacharyya A, Iyer S, Iliopoulos E, Sampath AV, Cabalu J, Moustakas TD, Friel I. High reflectivity and crack-free AlGaN/AlN ultraviolet distributed Bragg reflectors Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 20: 1229-1233. DOI: 10.1116/1.1482070  0.748
2002 Iliopoulos E, Moustakas TD. Growth kinetics of AlGaN films by plasma-assisted molecular-beam epitaxy Applied Physics Letters. 81: 295-297. DOI: 10.1063/1.1492853  0.662
2001 Iliopoulos E, Ludwig KF, Moustakas TD, Chu SNG. Chemical ordering in AlGaN alloys grown by molecular beam epitaxy Applied Physics Letters. 78: 463-465. DOI: 10.1063/1.1341222  0.636
2001 Iliopoulos E, Ludwig KF, Moustakas TD, Komninou P, Karakostas T, Nouet G, Chu SNG. Epitaxial growth and self-organized superlattice structures in AlGaN films grown by plasma assisted molecular beam epitaxy Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 87: 227-236. DOI: 10.1016/S0921-5107(01)00735-8  0.643
2001 Moustakas TD, Iliopoulos E, Sampath AV, Ng HM, Doppalapudi D, Misra M, Korakakis D, Singh R. Growth and device applications of III-nitrides by MBE Journal of Crystal Growth. 227: 13-20. DOI: 10.1016/S0022-0248(01)00625-X  0.832
2001 Sampath AV, Bhattacharyya A, Sandeep I, Ng HM, Iliopoulos E, Moustakas TD. MBE growth of GaN using NH3 and plasma sources Materials Research Society Symposium - Proceedings. 639.  0.763
2000 Sampath AV, Misra M, Seth K, Fedyunin Y, Ng HM, Iliopoulos E, Feit Z, Moustakas TD. A Comparative Study Of GaN Diodes Grown by MBE on Sapphire and HVPE-GaN /Sapphire Substrates Mrs Internet Journal of Nitride Semiconductor Research. 5: 577-583. DOI: 10.1557/S1092578300004786  0.813
2000 Sampath AV, Misra M, Seth K, Fedyunin Y, Ng HM, Iliopoulos E, Feit Z, Moustakas TD. A comparative study of GaN diodes grown by MBE on sapphire and HVPE-GaN/sapphire substrates Materials Research Society Symposium - Proceedings. 595.  0.765
2000 Sampath AV, Iliopoulos E, Seth K, Fedyunin Y, Misra M, Ng HM, Lamarre P, Feit Z, Moustakas TD. GaN photodiodes grown by MBE on HVPE and ELO-HVPE GaN/sapphire substrates Proceedings of Spie - the International Society For Optical Engineering. 3948: 311-318.  0.758
2000 Sampath AV, Misra M, Seth K, Fedyunin Y, Ng HM, Iliopoulos E, Feit Z, Moustakas TD. A comparative study of GaN diodes grown by MBE on sapphire and HVPE-GaN/sapphire substrates Materials Research Society Symposium - Proceedings. 595.  0.765
1999 Sampath AV, Misra M, Seth K, Fedyunin Y, Ng HM, Iliopoulos E, Feit Z, Moustakas TD. A Comparative Study Of GaN Diodes Grown by MBE on Sapphire and HVPE-GaN /Sapphire Substrates Mrs Proceedings. 595. DOI: 10.1557/Proc-595-F99W11.1  0.81
1999 Doppalapudi D, Iliopoulos E, Basu SN, Moustakas TD. Epitaxial growth of gallium nitride thin films on A-Plane sapphire by molecular beam epitaxy Journal of Applied Physics. 85: 3582-3589. DOI: 10.1063/1.369718  0.706
1999 Ng HM, Doppalapudi D, Iliopoulos E, Moustakas TD. Distributed Bragg reflectors based on AlN/GaN multilayers Applied Physics Letters. 74: 1036-1038. DOI: 10.1063/1.123447  0.715
1999 Ng HM, Doppalapudi D, Iliopoulos E, Moustakas TD. Erratum: “Distributed Bragg reflectors based on AlN/GaN multilayers” [Appl. Phys. Lett. 74, 1036 (1999)] Applied Physics Letters. 74: 4070-4070. DOI: 10.1063/1.123264  0.706
1999 Ng HM, Doppalapudi D, Iliopoulos E, Moustakas TD. Distributed Bragg reflectors based on AlN/GaN multilayers Applied Physics Letters. 74: 1036-1038.  0.605
1999 Doppalapudi D, Iliopoulos E, Basu SN, Moustakas TD. Epitaxial growth of gallium nitride thin films on A-plane sapphire by molecular beam epitaxy Journal of Applied Physics. 85: 3582-3589.  0.482
1998 Iliopoulos E, Doppalapudi D, Ng HM, Moustakas TD. Broadening of near-band-gap photoluminescence in n-GaN films Applied Physics Letters. 73: 375-377. DOI: 10.1063/1.121839  0.744
1998 Torvik JT, Pankove JI, Iliopoulos E, Ng HM, Moustakas TD. Optical properties of GaN grown over SiO2 on SiC substrates by molecular beam epitaxy Applied Physics Letters. 72: 244-245. DOI: 10.1063/1.120698  0.75
1997 Iliopoulos E, Doppalapudi D, Ng HM, Moustakas TD. Near Band Gap Photoluminescence Broadening In n-Gan Films Mrs Proceedings. 482. DOI: 10.1557/Proc-482-655  0.631
1997 Doppalapudi D, Iliopoulos E, Basu SN, Moustakas TD. Effect of Nitridation and Buffer in GaN Films Grown on A-Plane (11-20) Sapphire Mrs Proceedings. 482. DOI: 10.1557/Proc-482-51  0.697
1997 Moustakas TD, Singh R, KOrakakis D, Doppalapudi D, Ng Hm, Sampath A, Iliopoulos E, Misra M. Phase Separation and Atomic Ordering in AlGaInN Alloys Mrs Proceedings. 482: 193. DOI: 10.1557/Proc-482-193  0.721
1997 Doppalapudi D, Iliopoulos E, Basu SN, Moustakas TD. Effect of nitridation and buffer in GaN films grown on A-plane (11-20) sapphire Materials Research Society Symposium - Proceedings. 482: 51-56.  0.463
1997 Iliopoulos E, Doppalapudi D, Ng HM, Moustakas TD. Near band gap photoluminescence broadening in n-GaN films Materials Research Society Symposium - Proceedings. 482: 655-660.  0.633
1997 Moustakas TD, Singh R, Korakakis D, Doppalapudi D, Ng HM, Sampath A, Iliopoulos E, Misra M. Phase separation and atomic ordering in AlGaInN alloys Materials Research Society Symposium - Proceedings. 482: 193-204.  0.583
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