| Year |
Citation |
Score |
| 2019 |
Suntornwipat N, Majdi S, Gabrysch M, Friel I, Isberg J. Observation of transferred-electron oscillations in diamond Applied Physics Letters. 115: 192101. DOI: 10.1063/1.5126058 |
0.313 |
|
| 2016 |
Majdi S, Gabrysch M, Kovi KK, Suntornwipat N, Friel I, Isberg J. Low temperature conduction-band transport in diamond Applied Physics Letters. 109: 162106. DOI: 10.1063/1.4964720 |
0.306 |
|
| 2013 |
Balmer RS, Friel I, Hepplestone S, Isberg J, Uren MJ, Markham ML, Palmer NL, Pilkington J, Huggett P, Majdi S, Lang R. Transport behavior of holes in boron delta-doped diamond structures Journal of Applied Physics. 113. DOI: 10.1063/1.4775814 |
0.402 |
|
| 2011 |
Kovi KK, Majdi S, Gabrysch M, Friel I, Balmer R, Isberg J. Time-of-flight characterization of single-crystalline CVD diamond with different surface passivation layers Materials Research Society Symposium Proceedings. 1282: 47-52. DOI: 10.1557/Opl.2011.311 |
0.368 |
|
| 2009 |
Martineau PM, Gaukroger MP, Guy KB, Lawson SC, Twitchen DJ, Friel I, Hansen JO, Summerton GC, Addison TP, Burns R. High crystalline quality single crystal chemical vapour deposition diamond. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 21: 364205. PMID 21832311 DOI: 10.1088/0953-8984/21/36/364205 |
0.369 |
|
| 2009 |
Isberg J, Majdi S, Gabrysch M, Friel I, Balmer RS. A lateral time-of-flight system for charge transport studies Diamond and Related Materials. 18: 1163-1166. DOI: 10.1016/J.Diamond.2009.03.002 |
0.368 |
|
| 2009 |
Friel I, Clewes SL, Dhillon HK, Perkins N, Twitchen DJ, Scarsbrook GA. Control of surface and bulk crystalline quality in single crystal diamond grown by chemical vapour deposition Diamond and Related Materials. 18: 808-815. DOI: 10.1016/J.Diamond.2009.01.013 |
0.373 |
|
| 2008 |
Balmer RS, Friel I, Woollard SM, Wort CJ, Scarsbrook GA, Coe SE, El-Hajj H, Kaiser A, Denisenko A, Kohn E, Isberg J. Unlocking diamond's potential as an electronic material. Philosophical Transactions. Series a, Mathematical, Physical, and Engineering Sciences. 366: 251-65. PMID 18024362 DOI: 10.1098/Rsta.2007.2153 |
0.321 |
|
| 2008 |
Gaukroger MP, Martineau PM, Crowder MJ, Friel I, Williams SD, Twitchen DJ. X-ray topography studies of dislocations in single crystal CVD diamond Diamond and Related Materials. 17: 262-269. DOI: 10.1016/J.Diamond.2007.12.036 |
0.362 |
|
| 2006 |
Cabalu JS, Bhattacharyya A, Thomidis C, Friel I, Moustakas TD, Collins CJ, Komninou P. High power ultraviolet light emitting diodes based on GaNAlGaN quantum wells produced by molecular beam epitaxy Journal of Applied Physics. 100. DOI: 10.1063/1.2388127 |
0.737 |
|
| 2006 |
Plucinski L, Colakerol L, Bernardis S, Zhang Y, Wang S, O'Donnell C, Smith KE, Friel I, Moustakas TD. Photoemission study of sulfur and oxygen adsorption on GaN(0001̄) Surface Science. 600: 116-123. DOI: 10.1016/J.Susc.2005.10.021 |
0.467 |
|
| 2005 |
Cabalu JS, Thomidis C, Friel I, Moustakas TD. Nitride LEDs based on flat and "wrinkled" quantum wells Progress in Biomedical Optics and Imaging - Proceedings of Spie. 5732: 185-196. DOI: 10.1117/12.588360 |
0.753 |
|
| 2005 |
Friel I, Thomidis C, Moustakas TD. Ultraviolet electroabsorption modulator based on AlGaNGaN multiple quantum wells Journal of Applied Physics. 97. DOI: 10.1063/1.1937471 |
0.576 |
|
| 2005 |
Plucinski L, Learmonth T, Colakerol L, Bernardis S, Zhang Y, Glans PA, Smith KE, Zakharov AA, Nyholm R, Grzegory I, Suski T, Porowski S, Friel I, Moustakas TD. Resonant shake-up satellites in photoemission at the Ga 3p photothreshold in GaN Solid State Communications. 136: 191-195. DOI: 10.1016/J.Ssc.2005.07.030 |
0.454 |
|
| 2005 |
Friel I, Driscoll K, Kulenica E, Dutta M, Paiella R, Moustakas TD. Investigation of the design parameters of AlN/GaN multiple quantum wells grown by molecular beam epitaxy for intersubband absorption Journal of Crystal Growth. 278: 387-392. DOI: 10.1016/J.Jcrysgro.2005.01.042 |
0.596 |
|
| 2005 |
Xu T, Thomidis C, Friel I, Moustakas TD. Growth and silicon doping of AlGaN films in the entire alloy composition by molecular beam epitaxy Physica Status Solidi C: Conferences. 2: 2220-2223. DOI: 10.1002/Pssc.200461595 |
0.585 |
|
| 2004 |
Friel I, Thomidis C, Moustakas TD. Well width dependence of disorder effects on the optical properties of AlGaN/GaN quantum wells Applied Physics Letters. 85: 3068-3070. DOI: 10.1063/1.1804253 |
0.559 |
|
| 2004 |
Friel I, Thomidis C, Fedyunin Y, Moustakas TD. Investigation of excitons in AlGaN/GaN multiple quantum wells by lateral photocurrent and photoluminescence spectroscopies Journal of Applied Physics. 95: 3495-3502. DOI: 10.1063/1.1651323 |
0.573 |
|
| 2003 |
Cabalu JS, Gunter LL, Friel I, Bhattacharyya A, Fedyunin Y, Chu K, Bellotti E, Eddy C, Moustakas TD. Design and Fabrication of GaN-based Permeable-Base Transistors Mrs Proceedings. 798. DOI: 10.1557/Proc-798-Y10.21 |
0.702 |
|
| 2003 |
Bhattacharyya A, Friel I, Iyer S, Chen TC, Li W, Cabalu J, Fedyunin Y, Ludwig KF, Moustakas TD, Maruska HP, Hill DW, Gallagher JJ, Chou MC, Chai B. Comparative study of GaN/AlGaN MQWs grown homoepitaxially on (1 1̄ 0 0) and (0 0 0 1) GaN Journal of Crystal Growth. 251: 487-493. DOI: 10.1016/S0022-0248(02)02433-8 |
0.736 |
|
| 2003 |
Cabalu JS, Gunter LL, Friel I, Bhattacharyya A, Fedyunin Y, Chu K, Bellotti E, Eddy C, Moustakas TD. Design and fabrication of GaN-based permeable-base transistors Materials Research Society Symposium - Proceedings. 798: 85-90. |
0.751 |
|
| 2003 |
Maruska HP, Hill DW, Chou MMC, Gallagher JJ, Chai BH, Vanfleet R, Simmons J, Bhattacharyya A, Friel I, Chen TC, Li W, Cabalu J, Fedyunin Y, Ludwig KF, Moustakas TD. Development of 50 mm diameter non-polar gallium nitride substrates for device applications Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 567-570. |
0.365 |
|
| 2002 |
Bhattacharyya A, Iyer S, Iliopoulos E, Sampath AV, Cabalu J, Moustakas TD, Friel I. High reflectivity and crack-free AlGaN/AlN ultraviolet distributed Bragg reflectors Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 20: 1229-1233. DOI: 10.1116/1.1482070 |
0.638 |
|
| 2002 |
Bhattacharyya A, Friel I, Moustakas TD, Maruska HP, Hill DW, Gallagher JJ, Chou MMC, Chai B. Homoepitaxial growth of GaN/(In,Ga,Al)N MQWs on M-GaN (non-polar) and C-GaN (polar) substrates Mbe 2002 - 2002 12th International Conference On Molecular Beam Epitaxy. 227-228. DOI: 10.1109/MBE.2002.1037842 |
0.316 |
|
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