Year |
Citation |
Score |
2016 |
Yang PS, Cheng PH, Kao CR, Chen MJ. Novel Self-shrinking Mask for Sub-3 nm Pattern Fabrication. Scientific Reports. 6: 29625. PMID 27404325 DOI: 10.1038/srep29625 |
0.342 |
|
2012 |
Moustakas TD, Liao Y, Kao CK, Thomidis C, Bhattacharyya A, Bhattarai D, Moldawer A. Deep UV-LEDs with high IQE based on AlGaN alloys with strong band structure potential fluctuations Proceedings of Spie - the International Society For Optical Engineering. 8278. DOI: 10.1117/12.916213 |
0.746 |
|
2012 |
Liao Y, Thomidis C, Kao CK, Moustakas TD. Publishers note: AlGaN based deep ultraviolet light emitting diodes with high internal quantum efficiency grown by molecular beam epitaxy (Applied Physics Letters (2011) 98 (081110)) Applied Physics Letters. 100. DOI: 10.1063/1.3675971 |
0.782 |
|
2012 |
Liao Y, Kao CK, Thomidis C, Moldawer A, Woodward J, Bhattarai D, Moustakas TD. Recent progress of efficient deep UV-LEDs by plasma-assisted molecular beam epitaxy Physica Status Solidi (C) Current Topics in Solid State Physics. 9: 798-801. DOI: 10.1002/Pssc.201100438 |
0.774 |
|
2012 |
Kao CK, Bhattacharyya A, Thomidis C, Moldawer A, Paiella R, Moustakas TD. A comparative study of UV electro-absorption modulators based on bulk III-nitride films and multiple quantum wells Physica Status Solidi (C) Current Topics in Solid State Physics. 9: 770-773. DOI: 10.1002/Pssc.201100437 |
0.732 |
|
2011 |
Kao CK, Bhattacharyya A, Thomidis C, Paiella R, Moustakas TD. Electroabsorption modulators based on bulk GaN films and GaN/AlGaN multiple quantum wells Journal of Applied Physics. 109. DOI: 10.1063/1.3567921 |
0.776 |
|
2011 |
Liao Y, Thomidis C, Kao CK, Moustakas TD. AlGaN based deep ultraviolet light emitting diodes with high internal quantum efficiency grown by molecular beam epitaxy Applied Physics Letters. 98. DOI: 10.1063/1.3559842 |
0.83 |
|
2010 |
Liao Y, Thomidis C, Kao C, Moldawer A, Zhang W, Chang Y, Nikiforov AY, Bellotti E, Moustakas TD. Milliwatt power AlGaN‐based deep ultraviolet light emitting diodes by plasma‐assisted molecular beam epitaxy Physica Status Solidi-Rapid Research Letters. 4: 49-51. DOI: 10.1002/Pssr.200903400 |
0.763 |
|
2009 |
Liao Y, Thomidis C, Bhattacharyya A, Kao C, Moldawer A, Zhang W, Moustakas TD. Development of Milliwatt Power AlGaN-based Deep UV-LEDs by Plasma-assisted Molecular Beam Epitaxy Mrs Proceedings. 1202. DOI: 10.1557/Proc-1202-I10-01 |
0.76 |
|
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