| Year |
Citation |
Score |
| 2020 |
Kyrtsos A, Matsubara M, Bellotti E. Band offsets of AlxGa1-xN alloys using first-principles calculations. Journal of Physics. Condensed Matter : An Institute of Physics Journal. PMID 32396144 DOI: 10.1088/1361-648X/Ab922A |
0.332 |
|
| 2020 |
Tibaldi A, Montoya JAG, Alasio MGC, Gullino A, Larsson A, Debernardi P, Goano M, Vallone M, Ghione G, Bellotti E, Bertazzi F. Analysis of Carrier Transport in Tunnel-Junction Vertical-Cavity Surface-Emitting Lasers by a Coupled Nonequilibrium Green’s Function–Drift-Diffusion Approach Physical Review Applied. 14. DOI: 10.1103/Physrevapplied.14.024037 |
0.315 |
|
| 2020 |
Bertazzi F, Tibaldi A, Goano M, Montoya JAG, Bellotti E. Nonequilibrium Green’s Function Modeling of type-II Superlattice Detectors and its Connection to Semiclassical Approaches Physical Review Applied. 14. DOI: 10.1103/Physrevapplied.14.014083 |
0.309 |
|
| 2019 |
Glasmann A, Prigozhin I, Bellotti E. Understanding the $C-V$ Characteristics of InAsSb-Based nBn Infrared Detectors With N- and P-Type Barrier Layers Through Numerical Modeling Ieee Journal of the Electron Devices Society. 7: 534-543. DOI: 10.1109/Jeds.2019.2913157 |
0.438 |
|
| 2018 |
Appleton B, Hubbard T, Glasmann A, Bellotti E. Parametric numerical study of the modulation transfer function in small-pitch InGaAs/InP infrared arrays with refractive microlenses. Optics Express. 26: 5310-5326. PMID 29529736 DOI: 10.1364/Oe.26.005310 |
0.484 |
|
| 2017 |
Glasmann A, Hubbard T, Bellotti E. Numerical modeling of a dark current suppression mechanism in IR detector arrays Proceedings of Spie. 10177. DOI: 10.1117/12.2265901 |
0.404 |
|
| 2017 |
Bellotti E, Wen H, Dominici S, Glasmann AL. A comparative study of carrier lifetimes in ESWIR and MWIR materials: HgCdTe, InGaAs, InAsSb, and GeSn (Conference Presentation) Proceedings of Spie. 10177. DOI: 10.1117/12.2265894 |
0.41 |
|
| 2017 |
Kraczek B, Shishehchi S, Bellotti E. Towards noise-aware surrogate models of carrier population dynamics in optically excited GaN Proceedings of Spie. 10206. DOI: 10.1117/12.2261697 |
0.376 |
|
| 2017 |
Kyrtsos A, Matsubara M, Bellotti E. Migration mechanisms and diffusion barriers of vacancies in Ga 2 O 3 Physical Review B. 95: 245202. DOI: 10.1103/Physrevb.95.245202 |
0.315 |
|
| 2016 |
Dominici S, Wen H, Bertazzi F, Goano M, Bellotti E. Numerical study on the optical and carrier recombination processes in GeSn alloy for E-SWIR and MWIR optoelectronic applications. Optics Express. 24: 26363-26381. PMID 27857372 DOI: 10.1364/Oe.24.026363 |
0.397 |
|
| 2016 |
Schuster J, Tennant WE, Bellotti E, Wijewarnasuriya PS. Analysis of the auger recombination rate in P+N−n−N−N HgCdTe detectors for HOT applications Proceedings of Spie. 9819. DOI: 10.1117/12.2224383 |
0.417 |
|
| 2016 |
Glasmann A, Wen H, Bellotti E. Numerical modeling of extended short wave infrared InGaAs focal plane arrays Proceedings of Spie. 9819: 981906. DOI: 10.1117/12.2223442 |
0.447 |
|
| 2016 |
Goano M, Bertazzi F, Zhou X, Mandurrino M, Dominici S, Vallone ME, Ghione G, Tibaldi A, Calciati M, Debernardi P, Dolcini F, Rossi F, Verzellesi G, Meneghini M, Trivellin N, ... ... Bellotti E, et al. Challenges towards the simulation of GaN-based LEDs beyond the semiclassical framework Proceedings of Spie. 9742: 974202. DOI: 10.1117/12.2216489 |
0.437 |
|
| 2016 |
Kyrtsos A, Matsubara M, Bellotti E. Migration mechanisms and diffusion barriers of carbon and native point defects in GaN Physical Review B. 93: 245201. DOI: 10.1103/Physrevb.93.245201 |
0.326 |
|
| 2016 |
Sengupta P, Bellotti E. Intensity modulated optical transmission in a non-linear dielectric environment with an embedded mono-layer transition metal dichalcogenide Journal of Applied Physics. 120: 123105. DOI: 10.1063/1.4963110 |
0.311 |
|
| 2016 |
Dominici S, Wen H, Bertazzi F, Goano M, Bellotti E. Numerical evaluation of Auger recombination coefficients in relaxed and strained germanium Applied Physics Letters. 108: 211103. DOI: 10.1063/1.4952720 |
0.409 |
|
| 2016 |
Wen H, Bellotti E. Numerical study of the intrinsic recombination carriers lifetime in extended short-wavelength infrared detector materials: A comparison between InGaAs and HgCdTe Journal of Applied Physics. 119: 205702. DOI: 10.1063/1.4951708 |
0.384 |
|
| 2016 |
Sengupta P, Bellotti E. Tunable chirality and circular dichroism of a topological insulator with C 2 v symmetry as a function of Rashba and Dresselhaus parameters Applied Physics Letters. 108. DOI: 10.1063/1.4939860 |
0.313 |
|
| 2016 |
Schuster J, DeWames RE, DeCuir EA, Bellotti E, Dhar N, Wijewarnasuriya PS. Numerical Device Modeling, Analysis, and Optimization
of Extended-SWIR HgCdTe Infrared Detectors Journal of Electronic Materials. 45: 4654-4662. DOI: 10.1007/S11664-016-4602-6 |
0.433 |
|
| 2016 |
Pinkie B, Bellotti E. A Failure Mode in Dense Infrared Detector Arrays Resulting in Increased Dark Current Journal of Electronic Materials. 45: 4631-4639. DOI: 10.1007/S11664-016-4476-7 |
0.448 |
|
| 2015 |
Sengupta P, Klimeck G, Bellotti E. The evaluation of non-topological components in Berry phase and momentum relaxation time in a gapped 3D topological insulator. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 27: 335505. PMID 26241517 DOI: 10.1088/0953-8984/27/33/335505 |
0.326 |
|
| 2015 |
du Plessis M, Wen H, Bellotti E. Temperature characteristics of hot electron electroluminescence in silicon. Optics Express. 23: 12605-12. PMID 26074515 DOI: 10.1364/Oe.23.012605 |
0.339 |
|
| 2015 |
Bellotti E, Wen H, Pinkie B, Matsubara M, Bertazzi F. Full-band structure modeling of the radiative and non-radiative properties of semiconductor materials and devices (Presentation Recording) Proceedings of Spie. 9555. DOI: 10.1117/12.2190357 |
0.468 |
|
| 2015 |
Sengupta P, Bellotti E. Optical absorption in 3D topological insulator Bi2Te3 with applications to THz detectors (Presentation Recording) Proceedings of Spie. 9555. DOI: 10.1117/12.2190356 |
0.365 |
|
| 2015 |
Schuster J, DeWames RE, DeCuir EA, Bellotti E, Dhar N, Wijewarnasuriya PS. Heterojunction depth in P+-on-n eSWIR HgCdTe infrared detectors: Generation-recombination suppression Proceedings of Spie - the International Society For Optical Engineering. 9609. DOI: 10.1117/12.2186043 |
0.404 |
|
| 2015 |
Wichman AR, Pinkie BJ, Bellotti E. Negative Differential Resistance in Dense Short Wave Infrared HgCdTe Planar Photodiode Arrays Ieee Transactions On Electron Devices. 62: 1208-1214. DOI: 10.1109/Ted.2015.2406312 |
0.451 |
|
| 2015 |
Wen H, Bellotti E. Optical absorption and intrinsic recombination in relaxed and strained InAs1–xSbx alloys for mid-wavelength infrared application Applied Physics Letters. 107: 222103. DOI: 10.1063/1.4936862 |
0.327 |
|
| 2015 |
Schuster J, DeWames RE, DeCuir EA, Bellotti E, Wijewarnasuriya PS. Junction optimization in HgCdTe: Shockley-Read-Hall generation-recombination suppression Applied Physics Letters. 107: 023502. DOI: 10.1063/1.4926603 |
0.378 |
|
| 2015 |
Wen H, Pinkie B, Bellotti E. Direct and phonon-assisted indirect Auger and radiative recombination lifetime in HgCdTe, InAsSb, and InGaAs computed using Green's function formalism Journal of Applied Physics. 118: 15702. DOI: 10.1063/1.4923059 |
0.336 |
|
| 2015 |
Bertazzi F, Goano M, Zhou X, Calciati M, Ghione G, Matsubara M, Bellotti E. Looking for Auger signatures in III-nitride light emitters: A full-band Monte Carlo perspective Applied Physics Letters. 106: 61112. DOI: 10.1063/1.4908154 |
0.402 |
|
| 2015 |
Wichman AR, Pinkie B, Bellotti E. Dense Array Effects in SWIR HgCdTe Photodetecting Arrays Journal of Electronic Materials. 44: 3134-3143. DOI: 10.1007/S11664-015-3831-4 |
0.45 |
|
| 2015 |
DeWames R, Littleton R, Witte K, Wichman A, Bellotti E, Pellegrino J. Electro-Optical Characteristics of P+n In0.53Ga0.47As Hetero-Junction Photodiodes in Large Format Dense Focal Plane Arrays Journal of Electronic Materials. 44: 2813-2822. DOI: 10.1007/S11664-015-3706-8 |
0.486 |
|
| 2015 |
Pinkie B, Wichman AR, Bellotti E. Modulation Transfer Function Consequences of Planar Dense Array Geometries in Infrared Focal Plane Arrays Journal of Electronic Materials. 44: 2981-2989. DOI: 10.1007/S11664-015-3701-0 |
0.444 |
|
| 2014 |
Schuster J, D'Souza A, Bellotti E. Analysis of InAsSb nBn spectrally filtering photon-trapping structures. Optics Express. 22: 18987-9004. PMID 25320985 DOI: 10.1364/Oe.22.018987 |
0.438 |
|
| 2014 |
AVRUTIN V, HAFIZ SA, ZHANG F, ÖZGÜR Ü, BELLOTTI E, BERTAZZI F, GOANO M, MATULIONIS A, ROBERTS AT, EVERITT HO, MORKOÇ H. Saga of efficiency degradation at high injection in InGaN light emitting diodes Turkish Journal of Physics. 38: 269-313. DOI: 10.3906/Fiz-1407-23 |
0.408 |
|
| 2014 |
Reine M, Pinkie B, Schuster J, Bellotti E. New model for the ideal nBn infrared detector Proceedings of Spie - the International Society For Optical Engineering. 9070. DOI: 10.1117/12.2054525 |
0.417 |
|
| 2014 |
Wichman AR, DeWames RE, Bellotti E. Three-dimensional numerical simulation of planar P+n heterojunction In0.53Ga0.47As photodiodes in dense arrays part II: modulation transfer function modeling Proceedings of Spie. 9070: 907004. DOI: 10.1117/12.2050688 |
0.511 |
|
| 2014 |
Wichman AR, DeWames RE, Bellotti E. Three-dimensional numerical simulation of planar P+n heterojunction In0.53Ga0.47As photodiodes in dense arrays part I: dark current dependence on device geometry Proceedings of Spie. 9070: 907003. DOI: 10.1117/12.2050680 |
0.491 |
|
| 2014 |
Bertazzi F, Goano M, Calciati M, Zhou X, Ghione G, Bellotti E. Microscopic models of non-radiative and high-current effects in LEDs: state of the art and future developments Proceedings of Spie. 9003: 900310. DOI: 10.1117/12.2043234 |
0.405 |
|
| 2014 |
Bellotti E, Bertazzi F. Numerical simulation of deep-UV avalanche photodetectors Proceedings of Spie. 8980. DOI: 10.1117/12.2040789 |
0.401 |
|
| 2014 |
Shishehchi S, Paiella R, Bellotti E. Numerical simulation of III-nitride lattice-matched structures for quantum cascade lasers Proceedings of Spie. 8980. DOI: 10.1117/12.2040709 |
0.461 |
|
| 2014 |
Zhou X, Bertazzi F, Goano M, Ghione G, Bellotti E. Deriving k·p parameters from full-Brillouin-zone descriptions: A finite-element envelope function model for quantum-confined wurtzite nanostructures Journal of Applied Physics. 116: 33709. DOI: 10.1063/1.4890585 |
0.448 |
|
| 2014 |
Calciati M, Goano M, Bertazzi F, Vallone M, Zhou X, Ghione G, Meneghini M, Meneghesso G, Zanoni E, Bellotti E, Verzellesi G, Zhu D, Humphreys C. Correlating electroluminescence characterization and physics-based models of InGaN/GaN LEDs: Pitfalls and open issues Aip Advances. 4: 67118. DOI: 10.1063/1.4882176 |
0.497 |
|
| 2014 |
Shishehchi S, Garrett GA, Rudin S, Wraback M, Bellotti E. Theoretical and experimental study of time- and temperature-dependent photoluminescence in ZnO Journal of Electronic Materials. 43: 3033-3040. DOI: 10.1007/S11664-014-3188-0 |
0.357 |
|
| 2014 |
Pinkie B, Bellotti E. Numerical Simulation of the Modulation Transfer Function in HgCdTe Detector Arrays Journal of Electronic Materials. 43: 2864-2873. DOI: 10.1007/S11664-014-3134-1 |
0.471 |
|
| 2014 |
Wen H, Bellotti E. Numerical Analysis of Radiative Recombination in Narrow-Gap Semiconductors Using the Green’s Function Formalism Journal of Electronic Materials. 43: 2841-2848. DOI: 10.1007/S11664-014-3123-4 |
0.427 |
|
| 2014 |
Schuster J, Bellotti E. Evaluation of quantum efficiency, crosstalk, and surface recombination in hgcdte photon-trapping structures Journal of Electronic Materials. 43: 2808-2817. DOI: 10.1007/S11664-014-3081-X |
0.358 |
|
| 2014 |
Garrett GA, Shishehchi S, Rudin S, Malinovsky V, Wraback M, Bellotti E. Experimental and theoretical study of dephasing processes in the kinetics of photoexcited carriers in GaN Physica Status Solidi (C) Current Topics in Solid State Physics. 11: 824-827. DOI: 10.1002/Pssc.201300688 |
0.42 |
|
| 2014 |
Matsubara M, Pizzagalli L, Bellotti E. Threading screw dislocations in GaN by the Heyd‐Scuseria‐Ernzerhof hybrid functional Physica Status Solidi (C). 11: 521-524. DOI: 10.1002/Pssc.201300680 |
0.316 |
|
| 2013 |
Pinkie B, Schuster J, Bellotti E. Physics-based simulation of the modulation transfer function in HgCdTe infrared detector arrays. Optics Letters. 38: 2546-9. PMID 23939107 DOI: 10.1364/Ol.38.002546 |
0.459 |
|
| 2013 |
Schuster J, Bellotti E. Numerical simulation of crosstalk in reduced pitch HgCdTe photon-trapping structure pixel arrays. Optics Express. 21: 14712-27. PMID 23787659 DOI: 10.1364/Oe.21.014712 |
0.403 |
|
| 2013 |
Meneghini M, Vaccari S, Garbujo A, Trivellin N, Zhu D, Humphreys CJ, Calciati M, Goano M, Bertazzi F, Ghione G, Bellotti E, Meneghesso G, Zanoni E. Electroluminescence Analysis and Simulation of the Effects of Injection and Temperature on Carrier Distribution in InGaN-Based Light-Emitting Diodes with Color-Coded Quantum Wells Japanese Journal of Applied Physics. 52. DOI: 10.7567/Jjap.52.08Jg09 |
0.376 |
|
| 2013 |
Pinkie B, Schuster J, Bellotti E. Physics-based simulation of the modulation transfer function in HgCdTe infrared detector arrays Optics Letters. 38: 2546-2549. DOI: 10.1364/OL.38.002546 |
0.352 |
|
| 2013 |
Bellotti E, Schuster J, Pinkie B, Bertazzi F. Multiscale modeling of photon detectors from the infrared to the ultraviolet Proceedings of Spie - the International Society For Optical Engineering. 8868. DOI: 10.1117/12.2028181 |
0.469 |
|
| 2013 |
Schuster J, Bellotti E. Numerical simulation of quantum efficiency and surface recombination in HgCdTe IR photon-trapping structures Proceedings of Spie - the International Society For Optical Engineering. 8704. DOI: 10.1117/12.2016496 |
0.374 |
|
| 2013 |
Pinkie B, Bellotti E. Large-scale numerical simulation of reduced-pitch HgCdTe infrared detector arrays Proceedings of Spie. 8704. DOI: 10.1117/12.2016186 |
0.5 |
|
| 2013 |
Reine M, Pinkie B, Schuster J, Bellotti E. Numerical simulation of InAs nBn infrared detectors with N-Type barrier layers Proceedings of Spie - the International Society For Optical Engineering. 8704. DOI: 10.1117/12.2016150 |
0.438 |
|
| 2013 |
Bertazzi F, Goano M, Bellotti E. Auger recombination in bulk InGaN and quantum wells: a numerical simulation study Proceedings of Spie. 8619. DOI: 10.1117/12.2008735 |
0.415 |
|
| 2013 |
Shishehchi S, Bertazzi F, Bellotti E. A full band Monte-Carlo study of carrier transport properties of InAlN lattice matched to GaN Proceedings of Spie. 8619. DOI: 10.1117/12.2008734 |
0.437 |
|
| 2013 |
Bellotti E, Bertazzi F, Shishehchi S, Matsubara M, Goano M. Theory of Carriers Transport in III-Nitride Materials: State of the Art and Future Outlook Ieee Transactions On Electron Devices. 60: 3204-3215. DOI: 10.1109/Ted.2013.2266577 |
0.408 |
|
| 2013 |
Piprek J, Witzigmann B, Park S, Bellotti E. Introduction to the Issue on Numerical Simulation of Optoelectronic Devices Ieee Journal of Selected Topics in Quantum Electronics. 19: 200602-200602. DOI: 10.1109/Jstqe.2013.2264071 |
0.441 |
|
| 2013 |
Schuster J, Pinkie B, Tobin S, Keasler C, D'Orsogna D, Bellotti E. Numerical simulation of third-generation HgCdTe detector pixel arrays Ieee Journal On Selected Topics in Quantum Electronics. 19. DOI: 10.1109/Jstqe.2013.2256340 |
0.746 |
|
| 2013 |
Plessis Md, Venter PJ, Bellotti E. Spectral Characteristics of Hot Electron Electroluminescence in Silicon Avalanching Junctions Ieee Journal of Quantum Electronics. 49: 570-577. DOI: 10.1109/Jqe.2013.2260724 |
0.387 |
|
| 2013 |
Matsubara M, Godet J, Pizzagalli L, Bellotti E. Properties of threading screw dislocation core in wurtzite GaN studied by Heyd-Scuseria-Ernzerhof hybrid functional Applied Physics Letters. 103: 262107. DOI: 10.1063/1.4858618 |
0.314 |
|
| 2013 |
Shishehchi S, Rudin S, Garrett GA, Wraback M, Bellotti E. Theoretical and experimental study of dynamics of photoexcited carriers in GaN Journal of Applied Physics. 114. DOI: 10.1063/1.4849856 |
0.377 |
|
| 2013 |
Bertazzi F, Zhou X, Goano M, Ghione G, Bellotti E. Auger recombination in InGaN/GaN quantum wells: A full-Brillouin-zone study Applied Physics Letters. 103: 81106. DOI: 10.1063/1.4819129 |
0.412 |
|
| 2013 |
Shishehchi S, Bertazzi F, Bellotti E. A numerical study of low- and high-field carrier transport properties in In0.18Al0.82N lattice-matched to GaN Journal of Applied Physics. 113: 203709. DOI: 10.1063/1.4807914 |
0.399 |
|
| 2013 |
Reine M, Schuster J, Pinkie B, Bellotti E. Numerical simulation and analytical modeling of inas nBn infrared detectors with p-type barriers Journal of Electronic Materials. 42: 3015-3033. DOI: 10.1007/S11664-013-2685-X |
0.419 |
|
| 2013 |
Pinkie B, Bellotti E. Numerical Simulation of Spatial and Spectral Crosstalk in Two-Color MWIR/LWIR HgCdTe Infrared Detector Arrays Journal of Electronic Materials. 42: 3080-3089. DOI: 10.1007/S11664-013-2647-3 |
0.509 |
|
| 2012 |
Schuster J, Pinkie B, Reine M, Bellotti E. Numerical simulation of InAs/AlAsSb nBn detector arrays Proceedings of Spie. 8353: 835330. DOI: 10.1117/12.919401 |
0.433 |
|
| 2012 |
Ganmukhi R, Calciati M, Goano M, Bellotti E. Theoretical investigation of BeZnO-based UV LEDs Semiconductor Science and Technology. 27: 125015. DOI: 10.1088/0268-1242/27/12/125015 |
0.452 |
|
| 2012 |
Schuster J, Bellotti E. Analysis of optical and electrical crosstalk in small pitch photon trapping HgCdTe pixel arrays Applied Physics Letters. 101: 261118. DOI: 10.1063/1.4773484 |
0.427 |
|
| 2012 |
Bertazzi F, Goano M, Bellotti E. Numerical analysis of indirect Auger transitions in InGaN Applied Physics Letters. 101: 11111. DOI: 10.1063/1.4733353 |
0.379 |
|
| 2012 |
Bellotti E, Bertazzi F. A numerical study of carrier impact ionization in AlxGa1−xN Journal of Applied Physics. 111: 103711. DOI: 10.1063/1.4719967 |
0.374 |
|
| 2012 |
Schuster J, Keasler CA, Reine M, Bellotti E. Numerical Simulation of InAs nBn Back-Illuminated Detectors Journal of Electronic Materials. 41: 2981-2991. DOI: 10.1007/S11664-012-2168-5 |
0.785 |
|
| 2011 |
Chiaria S, Goano M, Bellotti E. Numerical Study of ZnO-Based LEDs Ieee Journal of Quantum Electronics. 47: 661-671. DOI: 10.1109/Jqe.2011.2104940 |
0.444 |
|
| 2011 |
Moresco M, Bertazzi F, Bellotti E. GaN Avalanche Photodectors: A Full Band Monte Carlo Study of Gain, Noise and Bandwidth Ieee Journal of Quantum Electronics. 47: 447-454. DOI: 10.1109/Jqe.2010.2091257 |
0.804 |
|
| 2011 |
Keasler CA, Bellotti E. Three-Dimensional Electromagnetic and Electrical Simulation of HgCdTe Pixel Arrays Journal of Electronic Materials. 40: 1795-1801. DOI: 10.1007/S11664-011-1644-7 |
0.791 |
|
| 2011 |
Bertazzi F, Goano M, Bellotti E. Calculation of Auger Lifetimes in HgCdTe Journal of Electronic Materials. 40: 1663-1667. DOI: 10.1007/S11664-011-1638-5 |
0.367 |
|
| 2011 |
Bellotti E, Moresco M, Bertazzi F. A 2D Full-Band Monte Carlo Study of HgCdTe-Based Avalanche Photodiodes Journal of Electronic Materials. 40: 1651-1656. DOI: 10.1007/S11664-011-1635-8 |
0.811 |
|
| 2010 |
Keasler CA, Moresco M, D'Orsogna D, Lamarre P, Bellotti E. 3D numerical analysis of As-diffused HgCdTe planar pixel arrays Proceedings of Spie. 7780. DOI: 10.1117/12.861107 |
0.714 |
|
| 2010 |
Smith FTJ, Lamarre P, Marciniec J, Tobin S, Parodos T, LoVecchio P, Wong K, Reine MB, Bellotti E, LeVan P, Hahn A, Bliss D. HgCdTe LWIR p-on-n photodiodes formed by arsenic diffusion from the vapor phase Proceedings of Spie - the International Society For Optical Engineering. 7780. DOI: 10.1117/12.861079 |
0.341 |
|
| 2010 |
Chiaria S, Furno E, Goano M, Bellotti E. Design Criteria for Near-Ultraviolet GaN-Based Light-Emitting Diodes Ieee Transactions On Electron Devices. 57: 60-70. DOI: 10.1109/Ted.2009.2034792 |
0.415 |
|
| 2010 |
Snyman LW, Plessis Md, Bellotti E. Photonic Transitions (1.4 eV–2.8 eV) in Silicon p $^{+}$ np $^{+}$ Injection-Avalanche CMOS LEDs as Function of Depletion Layer Profiling and Defect Engineering Ieee Journal of Quantum Electronics. 46: 906-919. DOI: 10.1109/Jqe.2009.2036746 |
0.386 |
|
| 2010 |
Bertazzi F, Goano M, Bellotti E. A numerical study of Auger recombination in bulk InGaN Applied Physics Letters. 97: 231118. DOI: 10.1063/1.3525605 |
0.375 |
|
| 2010 |
Bellotti E, Paiella R. Numerical Simulation of ZnO-Based Terahertz Quantum Cascade Lasers Journal of Electronic Materials. 39: 1097-1103. DOI: 10.1007/S11664-010-1206-4 |
0.408 |
|
| 2010 |
Bertazzi F, Moresco M, Penna M, Goano M, Bellotti E. Full-Band Monte Carlo Simulation of HgCdTe APDs Journal of Electronic Materials. 39: 912-917. DOI: 10.1007/S11664-010-1198-0 |
0.805 |
|
| 2010 |
Furno E, Chiaria S, Penna M, Bellotti E, Goano M. Electronic and Optical Properties of MgxZn1−xO and BexZn1−xO Quantum Wells Journal of Electronic Materials. 39: 936-944. DOI: 10.1007/S11664-010-1163-Y |
0.417 |
|
| 2010 |
Liao Y, Thomidis C, Kao C, Moldawer A, Zhang W, Chang Y, Nikiforov AY, Bellotti E, Moustakas TD. Milliwatt power AlGaN‐based deep ultraviolet light emitting diodes by plasma‐assisted molecular beam epitaxy Physica Status Solidi-Rapid Research Letters. 4: 49-51. DOI: 10.1002/Pssr.200903400 |
0.316 |
|
| 2009 |
Moresco M, Bertazzi F, Bellotti E. Theory of high field carrier transport and impact ionization in wurtzite GaN. Part II: Application to avalanche photodetectors Journal of Applied Physics. 106: 63719. DOI: 10.1063/1.3213364 |
0.793 |
|
| 2009 |
Bertazzi F, Moresco M, Bellotti E. Theory of high field carrier transport and impact ionization in wurtzite GaN. Part I: A full band Monte Carlo model Journal of Applied Physics. 106: 63718. DOI: 10.1063/1.3213363 |
0.8 |
|
| 2009 |
Bellotti E, Driscoll K, Moustakas TD, Paiella R. Monte Carlo simulation of terahertz quantum cascade laser structures based on wide-bandgap semiconductors Journal of Applied Physics. 105: 113103. DOI: 10.1063/1.3137203 |
0.403 |
|
| 2009 |
Bertazzi F, Bellotti E, Furno E, Goano M. Experimental electron mobility in ZnO: A reassessment through Monte Carlo simulation Journal of Electronic Materials. 38: 1677-1683. DOI: 10.1007/S11664-009-0809-0 |
0.399 |
|
| 2009 |
Penna M, Marnetto A, Bertazzi F, Bellotti E, Goano M. Empirical Pseudopotential and Full-Brillouin-Zone k · p Electronic Structure of CdTe, HgTe, and Hg 1−x Cd x Te Journal of Electronic Materials. 38: 1717-1725. DOI: 10.1007/S11664-009-0798-Z |
0.368 |
|
| 2009 |
D'Orsogna D, Lamarre P, Bellotti E, Barbone PE, Smith F, Fulk C, Lovecchio P, Reine MB, Tobin SP, Markunas J. A novel stress characterization technique for the development of low-stress ohmic contacts to HgCdTe Journal of Electronic Materials. 38: 1698-1706. DOI: 10.1007/S11664-009-0790-7 |
0.309 |
|
| 2009 |
Lamarre P, Fulk C, D'Orsogna D, Bellotti E, Smith F, Lovecchio P, Reine MB, Parodos T, Marciniec J, Tobin SP, Markunas J. Characterization of dislocations in HgCdTe heteroepitaxial layers using a new substrate removal technique Journal of Electronic Materials. 38: 1746-1754. DOI: 10.1007/S11664-009-0771-X |
0.304 |
|
| 2008 |
Bellotti E, Driscoll K, Moustakas TD, Paiella R. Monte Carlo study of GaN versus GaAs terahertz quantum cascade structures Applied Physics Letters. 92: 101112. DOI: 10.1063/1.2894508 |
0.408 |
|
| 2008 |
D'Orsogna D, Tobin SP, Bellotti E. Numerical analysis of a very long-wavelength HgCdTe pixel array for infrared detection Journal of Electronic Materials. 37: 1349-1355. DOI: 10.1007/S11664-008-0438-Z |
0.511 |
|
| 2008 |
Marnetto A, Penna M, Bertazzi F, Bellotti E, Goano M. Ab initio, nonlocal pseudopotential, and full-zone k · p computation of the electronic structure of wurtzite BeO Optical and Quantum Electronics. 40: 1135-1141. DOI: 10.1007/S11082-009-9273-6 |
0.376 |
|
| 2007 |
Goano M, Bertazzi F, Penna M, Bellotti E. Electronic structure of wurtzite ZnO: Nonlocal pseudopotential and ab initio calculations Journal of Applied Physics. 102: 83709. DOI: 10.1063/1.2794380 |
0.376 |
|
| 2007 |
Bellotti E, Bertazzi F, Goano M. Alloy scattering in AlGaN and InGaN : A numerical study Journal of Applied Physics. 101: 123706. DOI: 10.1063/1.2748353 |
0.342 |
|
| 2007 |
Bertazzi F, Goano M, Bellotti E. Electron and Hole Transport in Bulk ZnO: A Full Band Monte Carlo Study Journal of Electronic Materials. 36: 857-863. DOI: 10.1007/S11664-007-0111-Y |
0.43 |
|
| 2006 |
Bellotti E, D'Orsogna D. Numerical analysis of HgCdTe simultaneous two-color photovoltaic infrared detectors Ieee Journal of Quantum Electronics. 42: 418-426. DOI: 10.1109/Jqe.2006.871555 |
0.798 |
|
| 2006 |
Camarchia V, Goano M, Ghione G, Bellotti E. Theoretical investigation of GaN permeable base transistors for microwave power applications Semiconductor Science and Technology. 21: 13-18. DOI: 10.1088/0268-1242/21/1/003 |
0.439 |
|
| 2005 |
Sood AK, Egerton JE, Puri YR, Bellotti E, D’Orsogna D, Becker L, Balcerak R, Freyvogel K, Richwine R. Design and development of multicolor MWIR/LWIR and LWIR/VLWIR detector arrays Journal of Electronic Materials. 34: 909-912. DOI: 10.1007/S11664-005-0041-5 |
0.384 |
|
| 2004 |
Tirino L, Weber M, Brennan KF, Bellotti E. A General Monte Carlo Model Including the Effect of the Acoustic Deformation Potential on the Transport Properties Journal of Computational Electronics. 3: 81-93. DOI: 10.1007/S10825-004-0313-Y |
0.438 |
|
| 2003 |
Tirino L, Weber M, Brennan KF, Bellotti E, Goano M. Temperature dependence of the impact ionization coefficients in GaAs, cubic SiC, and zinc-blende GaN Journal of Applied Physics. 94: 423-430. DOI: 10.1063/1.1579129 |
0.33 |
|
| 2003 |
Wraback M, Shen H, Rudin S, Bellotti E, Goano M, Carrano JC, Collins CJ, Campbell JC, Dupuis RD. Direction-dependent band nonparabolicity effects on high-field transient electron transport in GaN Applied Physics Letters. 82: 3674-3676. DOI: 10.1063/1.1577833 |
0.376 |
|
| 2003 |
Nilsson HE, Englund U, Hjelm M, Bellotti E, Brennan K. Full band Monte Carlo study of high field transport in cubic phase silicon carbide Journal of Applied Physics. 93: 3389-3394. DOI: 10.1063/1.1554472 |
0.444 |
|
| 2003 |
Hjelm M, Nilsson H, Martinez A, Brennan KF, Bellotti E. Monte Carlo study of high-field carrier transport in 4H-SiC including band-to-band tunneling Journal of Applied Physics. 93: 1099-1107. DOI: 10.1063/1.1530712 |
0.426 |
|
| 2002 |
Camarchia V, Bellotti E, Goano M, Ghione G. Physics-based modeling of submicron GaN permeable base transistors Ieee Electron Device Letters. 23: 303-305. DOI: 10.1109/Led.2002.1004216 |
0.453 |
|
| 2002 |
Tirino L, Weber M, Brennan KF, Bellotti E, Goano M, Ruden PP. Journal of Computational Electronics. 1: 231-234. DOI: 10.1023/A:1020785710423 |
0.481 |
|
| 2002 |
Nilsson H, Martinez A, Sannemo U, Hjelm M, Bellotti E, Brennan K. Monte Carlo simulation of high field hole transport in 4H–SiC including band to band tunneling and optical interband transitions Physica B-Condensed Matter. 314: 68-71. DOI: 10.1016/S0921-4526(01)01356-4 |
0.401 |
|
| 2002 |
Wraback M, Shen H, Rudin S, Bellotti E. Experimental and Theoretical Studies of Transient Electron Velocity Overshoot in GaN Physica Status Solidi B-Basic Solid State Physics. 234: 810-816. DOI: 10.1002/1521-3951(200212)234:3<810::Aid-Pssb810>3.0.Co;2-W |
0.346 |
|
| 2001 |
Ghillino E, Garetto C, Goano M, Ghione G, Bellotti E, Brennan KF. Simplex Algorithm for Band Structure Calculation of Noncubic Symmetry Semiconductors: Application to III-nitride Binaries and Alloys Vlsi Design. 13: 63-68. DOI: 10.1155/2001/74207 |
0.378 |
|
| 2001 |
Brennan KF, Bellotti E, Farahmand M, Nilsson H, Ruden PP, Zhang Y. Monte Carlo modeling of wurtzite and 4H phase semiconducting materials Vlsi Design. 13: 117-124. DOI: 10.1155/2001/48073 |
0.427 |
|
| 2001 |
Farahmand M, Garetto C, Bellotti E, Brennan KF, Goano M, Ghillino E, Ghione G, Albrecht JD, Ruden PP. Monte Carlo simulation of electron transport in the III-nitride wurtzite phase materials system: binaries and ternaries Ieee Transactions On Electron Devices. 48: 535-542. DOI: 10.1109/16.906448 |
0.416 |
|
| 2001 |
Nilsson H-, Martinez A, Ghillino E, Sannemo U, Bellotti E, Goano M. Numerical modeling of hole interband tunneling in wurtzite GaN and SiC Journal of Applied Physics. 90: 2847-2852. DOI: 10.1063/1.1388169 |
0.393 |
|
| 2001 |
Nilsson H-, Bellotti E, Hjelm M, Brennan K. A comparison between different Monte Carlo models in simulation of hole transport in 4H-SiC Mathematics and Computers in Simulation. 55: 199-208. DOI: 10.1016/S0378-4754(00)00262-7 |
0.417 |
|
| 2001 |
Brennan KF, Bellotti E, Farahmand M, Nilsson HE, Ruden PP, Zhang Y. Monte Carlo modeling of wurtzite and 4H phase semiconducting materials Vlsi Design. 13: 117-124. |
0.315 |
|
| 2000 |
Nilsson H, Bellotti E, Brennan K, Hjelm M. A Full Band Monte Carlo Study of High Field Carrier Transport in 4H-SiC Materials Science Forum. 765-768. DOI: 10.4028/Www.Scientific.Net/Msf.338-342.765 |
0.438 |
|
| 2000 |
Bellotti E, Farahmand M, Nilsson H-, Brennan KF, Ruden PP. Monte Carlo based calculation of transport parameters for wide band gap device simulation Mrs Proceedings. 622. DOI: 10.1557/Proc-622-T6.24.1 |
0.438 |
|
| 2000 |
Brennan KF, Bellotti E, Farahmand M, Nilsson H-, Ruden PP, Zhang Y. Monte Carlo simulation of noncubic symmetry semiconducting materials and devices Ieee Transactions On Electron Devices. 47: 1882-1890. DOI: 10.1109/16.870567 |
0.452 |
|
| 2000 |
Ruden PP, Bellotti E, Nilsson H, Brennan KF. Modeling of band-to-band tunneling transitions during drift in Monte Carlo transport simulations Journal of Applied Physics. 88: 1488-1493. DOI: 10.1063/1.373844 |
0.436 |
|
| 2000 |
Bellotti E, Nilsson H, Brennan KF, Ruden PP, Trew R. Monte Carlo calculation of hole initiated impact ionization in 4H phase SiC Journal of Applied Physics. 87: 3864-3871. DOI: 10.1063/1.372426 |
0.432 |
|
| 2000 |
Goano M, Bellotti E, Ghillino E, Garetto C, Ghione G, Brennan KF. Band structure nonlocal pseudopotential calculation of the III-nitride wurtzite phase materials system. Part II. Ternary alloys AlxGa1−xN, InxGa1−xN, and InxAl1−xN Journal of Applied Physics. 88: 6476-6482. DOI: 10.1063/1.1309047 |
0.411 |
|
| 2000 |
Goano M, Bellotti E, Ghillino E, Ghione G, Brennan KF. Band structure nonlocal pseudopotential calculation of the III-nitride wurtzite phase materials system. Part I. Binary compounds GaN, AlN, and InN Journal of Applied Physics. 88: 6467-6475. DOI: 10.1063/1.1309046 |
0.39 |
|
| 2000 |
Brennan KF, Bellotti E, Farahmand M, Haralson J, Ruden P, Albrecht JD, Sutandi A. Materials theory based modeling of wide band gap semiconductors: from basic properties to devices Solid-State Electronics. 44: 195-204. DOI: 10.1016/S0038-1101(99)00224-5 |
0.412 |
|
| 2000 |
Bellotti E, Nilsson HE, Brennan KF, Ruden PP, Trew R. Monte Carlo calculation of hole initiated impact ionization in 4H phase SiC Journal of Applied Physics. 87: 3864-3871. |
0.324 |
|
| 2000 |
Bellotti E, Farahmand M, Nilsson HE, Brennan KF, Ruden PP. Monte Carlo based calculation of transport parameters for wide band gap device simulation Materials Research Society Symposium - Proceedings. 622. |
0.328 |
|
| 2000 |
Ruden PP, Bellotti E, Nilsson HE, Brennan KF. Modeling of band-to-band tunneling transitions during drift in Monte Carlo transport simulations Journal of Applied Physics. 88: 1488-1493. |
0.335 |
|
| 1999 |
Bellotti E, Doshi B, Brennan KF, Ruden PP. Ensemble Monte Carlo Study of Electron Transport in Bulk Indium Nitride Mrs Internet Journal of Nitride Semiconductor Research. 4: 781-786. DOI: 10.1557/S1092578300003410 |
0.347 |
|
| 1999 |
Albrecht JD, Ruden PP, Bellotti E, Brennan KF. MONTE carlo simulation of hall effect in N-TYPE GaN Mrs Internet Journal of Nitride Semiconductor Research. 4: 570-575. DOI: 10.1557/S1092578300003069 |
0.359 |
|
| 1999 |
Bellotti E, Nilsson H, Brennan KF, Ruden PP. Ensemble Monte Carlo calculation of hole transport in bulk 3C–SiC Journal of Applied Physics. 85: 3211-3217. DOI: 10.1063/1.369689 |
0.41 |
|
| 1999 |
Bellotti E, Doshi BK, Brennan KF, Albrecht JD, Ruden PP. Ensemble Monte Carlo study of electron transport in wurtzite InN Journal of Applied Physics. 85: 916-923. DOI: 10.1063/1.369211 |
0.395 |
|
| 1999 |
Bellotti E, Doshi B, Brennan KF, Ruden PP. Ensemble Monte Carlo study of electron transport in bulk indium nitride Mrs Internet Journal of Nitride Semiconductor Research. 4. |
0.349 |
|
| 1998 |
Albrecht JD, Ruden PP, Bellotti E, Brennan KF. Monte Carlo Simulation of Hall Effect in n-Type GaN Mrs Proceedings. 537. DOI: 10.1557/Proc-537-G6.6 |
0.391 |
|
| 1998 |
Bellotti E, Doshi B, Brennan KF, Ruden PP. Ensemble Monte Carlo Study of Electron Transport in Bulk Indium Nitride Mrs Proceedings. 537. DOI: 10.1557/Proc-537-G6.59 |
0.347 |
|
| 1998 |
Bellotti E, Brennan KF, Wang R, Ruden PP. Monte Carlo study of electron initiated impact ionization in bulk zincblende and wurtzite phase ZnS Journal of Applied Physics. 83: 4765-4772. DOI: 10.1063/1.367267 |
0.403 |
|
| 1997 |
Albrecht JD, Wang R, Ruden PP, Farahmand M, Bellotti E, Brennan KF. Monte Carlo Calculation Of High- And Low-Field Al x Ga 1−x N Electron Transport Characteristics Mrs Proceedings. 482: 815. DOI: 10.1557/Proc-482-815 |
0.392 |
|
| 1997 |
Bellotti E, Brennan KF, Wang R, Ruden PP. Calculation of the electron initiated impact ionization transition rate in cubic and hexagonal phase ZnS Journal of Applied Physics. 82: 2961-2964. DOI: 10.1063/1.366131 |
0.341 |
|
| 1997 |
Oğuzman IH, Bellotti E, Brennan KF, Kolnı́k J, Wang R, Ruden PP. Theory of hole initiated impact ionization in bulk zincblende and wurtzite GaN Journal of Applied Physics. 81: 7827-7834. DOI: 10.1063/1.365392 |
0.415 |
|
| 1997 |
Ogǔzman IH, Bellotti E, Brennan KF, Kolník J, Wang R, Ruden PP. Theory of hole initiated impact ionization in bulk zincblende and wurtzite GaN Journal of Applied Physics. 81: 7827-7834. |
0.301 |
|
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