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Richard K. Ahrenkiel - Publications

Affiliations: 
University of Colorado, Boulder, Boulder, CO, United States 
Area:
Condensed Matter Physics, Electronics and Electrical Engineering
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65 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2016 Moseley J, Al-Jassim MM, Guthrey HL, Burst JM, Duenow JN, Ahrenkiel RK, Metzger WK. Cathodoluminescence spectrum imaging analysis of CdTe thin-film bevels Journal of Applied Physics. 120. DOI: 10.1063/1.4962286  0.574
2015 Moseley J, Al-Jassim MM, Paudel N, Mahabaduge H, Kuciauskas D, Guthrey HL, Duenow J, Yan Y, Metzger WK, Ahrenkiel RK. Opto-electronic characterization of CdTe solar cells from TCO to back contact with nano-scale CL probe 2015 Ieee 42nd Photovoltaic Specialist Conference, Pvsc 2015. DOI: 10.1109/PVSC.2015.7355934  0.558
2015 Moseley J, Metzger WK, Moutinho HR, Paudel N, Guthrey HL, Yan Y, Ahrenkiel RK, Al-Jassim MM. Recombination by grain-boundary type in CdTe Journal of Applied Physics. 118. DOI: 10.1063/1.4926726  0.546
2014 Moseley J, Al-Jassim MM, Kuciauskas D, Moutinho HR, Paudel N, Guthrey HL, Yan Y, Metzger WK, Ahrenkiel RK. Cathodoluminescence analysis of grain boundaries and grain interiors in thin-film CdTe Ieee Journal of Photovoltaics. 4: 1671-1679. DOI: 10.1109/Jphotov.2014.2359732  0.547
2014 Johnston S, Zaunbrecher K, Ahrenkiel R, Kuciauskas D, Albin D, Metzger W. Simultaneous measurement of minority-carrier lifetime in single-crystal CdTe using three transient decay techniques Ieee Journal of Photovoltaics. 4: 1295-1300. DOI: 10.1109/Jphotov.2014.2339491  0.584
2014 Ahrenkiel RK, Johnston SW, Kuciauskas D, Tynan J. Dual-sensor technique for characterization of carrier lifetime decay transients in semiconductors Journal of Applied Physics. 116. DOI: 10.1063/1.4903213  0.386
2013 Kuciauskas D, Kanevce A, Burst JM, Duenow JN, Dhere R, Albin DS, Levi DH, Ahrenkiel RK. Minority carrier lifetime analysis in the bulk of thin-film absorbers using subbandgap (Two-Photon) excitation Ieee Journal of Photovoltaics. 3: 1319-1324. DOI: 10.1109/Jphotov.2013.2270354  0.372
2013 Moseley J, Al-Jassim MM, Moutinho HR, Guthrey HL, Metzger WK, Ahrenkiel RK. Explanation of red spectral shifts at CdTe grain boundaries Applied Physics Letters. 103. DOI: 10.1063/1.4838015  0.556
2011 Ahrenkiel RK, Dunlavy DJ. A new lifetime diagnostic system for photovoltaic materials Solar Energy Materials and Solar Cells. 95: 1985-1989. DOI: 10.1016/j.solmat.2010.02.037  0.309
2010 Feldman AD, Ahrenkiel RK. Space charge limited current effect on photoconductive decay in silicon at high injection levels Conference Record of the Ieee Photovoltaic Specialists Conference. 1374-1379. DOI: 10.1109/PVSC.2010.5614385  0.311
2010 Ahrenkiel RK, Call N, Johnston SW, Metzger WK. Comparison of techniques for measuring carrier lifetime in thin-film and multicrystalline photovoltaic materials Solar Energy Materials and Solar Cells. 94: 2197-2204. DOI: 10.1016/J.Solmat.2010.07.012  0.611
2009 Ahrenkiel RK, Feldman A, George M, Chandra H. Recombination velocity of SiN x:H/silicon interfaces and the relationship of insulator charge Conference Record of the Ieee Photovoltaic Specialists Conference. 001054-001059. DOI: 10.1109/PVSC.2009.5411202  0.316
2008 Ahrenkiel RK, Johnston SW, Metzger WK, Dippo P. Relationship of band-edge luminescence to recombination lifetime in silicon wafers Journal of Electronic Materials. 37: 396-402. DOI: 10.1007/S11664-007-0325-Z  0.586
2006 Ahrenkiel RK, Johnston SW, Metzger WK. Comparison of techniques for measuring recombination lifetime in photovoltaic materials: Trapping effects Materials Research Society Symposium Proceedings. 974: 7-12. DOI: 10.1557/Proc-0974-Cc01-01  0.592
2006 Mason MS, Richardson CE, Atwater HA, Ahrenkiel RK. Microsecond minority carrier lifetimes in HWCVD-grown films and implications for thin film solar cells Thin Solid Films. 501: 288-290. DOI: 10.1016/J.Tsf.2005.07.197  0.345
2005 Metzger WK, Gloeckler M, Ahrenkiel RK. Two-dimensional and multi-experimental modeling of polycrystalline Cu(In, Ga)Se 2 solar cells Materials Research Society Symposium Proceedings. 865: 319-324. DOI: 10.1557/Proc-865-F10.4  0.496
2005 Metzger WK, Ahrenkiel RK, Dashdorj J, Friedman DJ. Analysis of charge separation dynamics in a semiconductor junction Physical Review B - Condensed Matter and Materials Physics. 71. DOI: 10.1103/Physrevb.71.035301  0.618
2005 Lin Y, Hudait MK, Johnston SW, Ahrenkiel RK, Ringel SA. Photoconductivity decay in metamorphic InAsPInGaAs double heterostructures grown on in Asy P1-y compositionally step-graded buffers Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1866645  0.318
2005 Kohli S, Theil JA, Dippo PC, Ahrenkiel RK, Rithner CD, Dorhout PK. Chemical, optical, vibrational and luminescent properties of hydrogenated silicon-rich oxynitride films Thin Solid Films. 473: 89-97. DOI: 10.1016/J.Tsf.2004.07.054  0.315
2005 Ahrenkiel RK, Metzger WK, Page M, Reedy R, Luther J, Dashdorj J. Relationship of recombination lifetime to dark current in silicon p-n junctions Conference Record of the Ieee Photovoltaic Specialists Conference. 895-898.  0.609
2004 Kohli S, Theil JA, Dippo PC, Jones KM, Al-Jassim MM, Ahrenkiel RK, Rithner CD, Dorhout PK. Nanocrystal formation in annealed a-SiO0.17N0.07:H films Nanotechnology. 15: 1831-1836. DOI: 10.1088/0957-4484/15/12/024  0.331
2004 Ahrenkiel RK, Metzger W, Friedman DF. Transport properties of ordered-GalnP/GaAs heterostructures Applied Physics Letters. 85: 1733-1735. DOI: 10.1063/1.1784876  0.566
2004 Ahrenkiel RK, Dashdorj J. Interface recombination velocity measurement by a contactless microwave technique Epj Applied Physics. 27: 499-501. DOI: 10.1051/Epjap:2004071  0.379
2004 Hermann AM, Madan A, Wanlass MW, Badri V, Ahrenkiel R, Morrison S, Gonzalez C. MOCVD growth and properties of Zn3P2 and Cd3P2 films for thermal photovoltaic applications Solar Energy Materials and Solar Cells. 82: 241-252. DOI: 10.1016/J.Solmat.2004.01.021  0.383
2003 Ahrenkiel RK, Friedman D, Metzger WK, Page M, Dashdorj J. Observation of retarded recombination in charge-separation structures Materials Research Society Symposium - Proceedings. 799: 205-210. DOI: 10.1557/Proc-799-Z4.6  0.604
2003 Dashdorj J, Ahrenkiel R, Metzger W. Modeling of recombination lifetimes in charge-separation device structures Mrs Proceedings. 799. DOI: 10.1557/Proc-799-Z4.5  0.631
2003 Metzger WK, Albin D, Levi D, Sheldon P, Li X, Keyes BM, Ahrenkiel RK. Time-resolved photoluminescence studies of CdTe solar cells Journal of Applied Physics. 94: 3549-3555. DOI: 10.1063/1.1597974  0.606
2003 Ahrenkiel RK. Recombination processes and lifetime measurements in silicon photovoltaics Solar Energy Materials and Solar Cells. 76: 243-256. DOI: 10.1016/S0927-0248(02)00277-5  0.315
2002 Metzger WK, Wanlass MW, Gedvilas LM, Verley JC, Carapella JJ, Ahrenkiel RK. Effective electron mass and plasma filter characterization of n-type InGaAs and InAsP Journal of Applied Physics. 92: 3524-3529. DOI: 10.1063/1.1504170  0.568
2001 Metzger WK, Wanlass MW, Ellingson RJ, Ahrenkiel RK, Carapella JJ. Auger recombination in low-band-gap n-type InGaAs Applied Physics Letters. 79: 3272-3274. DOI: 10.1063/1.1418032  0.569
2001 Ahrenkiel RK, Ellingson R, Metzger W, Lubyshev DI, Liu WK. Auger recombination in heavily carbon-doped GaAs Applied Physics Letters. 78: 1879-1881. DOI: 10.1063/1.1357213  0.616
2000 Balcioglu A, Ahrenkiel RK, Hasoon F. Deep-level impurities in CdTe/CdS thin-film solar cells Journal of Applied Physics. 88: 7175-7178. DOI: 10.1063/1.1326465  0.337
1999 Karam NH, King RR, Terence Cavicchi B, Krut DD, Ermer JH, Haddad M, Cai L, Joslin DE, Takahashi M, Eldredge JW, Nishikawa WT, Lillington DR, Keyes BM, Ahrenkiel RK. Development and characterization of high-efficiency Ga0.5In0.5P/GaAs/Ge dual- and triple-junction solar cells Ieee Transactions On Electron Devices. 46: 2116-2125. DOI: 10.1109/16.792006  0.377
1998 Ahrenkiel RK, Ellingson R, Johnston S, Wanlass M. Recombination lifetime of In0.53Ga0.47As as a function of doping density Applied Physics Letters. 72: 3470-3472. DOI: 10.1063/1.121669  0.403
1998 Ahrenkiel RK, Johnston S. Contactless measurement of recombination lifetime in photovoltaic materials Solar Energy Materials and Solar Cells. 55: 59-73. DOI: 10.1016/S0927-0248(98)00047-6  0.356
1996 Ahrenkiel RK, Levi D, Arch J. Recombination lifetime studies of silicon spheres Solar Energy Materials and Solar Cells. 41: 171-181. DOI: 10.1016/0927-0248(95)00130-1  0.395
1996 Levi DH, Moutinho HR, Hasoon FS, Keyes BM, Ahrenkiel RK, Al-Jassim M, Kazmerski LL, Birkmire RW. Micro through nanostructure investigations of polycrystalline CdTe: Correlations with processing and electronic structures Solar Energy Materials and Solar Cells. 41: 381-393. DOI: 10.1016/0927-0248(95)00110-7  0.363
1994 Rosenwaks Y, Thacker BR, Ahrenkiel RK, Nozik AJ, Yavneh I. Photogenerated carrier dynamics under the influence of electric fields in III-V semiconductors. Physical Review. B, Condensed Matter. 50: 1746-1754. PMID 9976365 DOI: 10.1103/Physrevb.50.1746  0.363
1994 Vernon SM, Sanfacon MM, Ahrenkiel RK. Growth of (GaAs)1_x(Ge2)x by metalorganic chemical vapor deposition Journal of Electronic Materials. 23: 147-151. DOI: 10.1007/Bf02655261  0.358
1994 Lovejoy ML, Melloch MR, Lundstrom MS, Keyes BR, Ahrenkiel RK. Temperature dependence of minority hole mobility in n+-GaAs measured with a new variable temperature technique Journal of Electronic Materials. 23: 669-673. DOI: 10.1007/Bf02653354  0.361
1993 Rosenwaks Y, Hanna MC, Levi DH, Szmyd DM, Ahrenkiel RK, Nozik AJ. Hot-carrier cooling in GaAs: Quantum wells versus bulk. Physical Review. B, Condensed Matter. 48: 14675-14678. PMID 10007896 DOI: 10.1103/Physrevb.48.14675  0.35
1993 Ahrenkiel RK. Chapter 2 Minority-Carrier Lifetime in III-V Semiconductors Semiconductors and Semimetals. 39: 39-150. DOI: 10.1016/S0080-8784(08)62594-6  0.367
1992 Ahrenkiel RK, Keyes BM, MacMillan HF, Lush GB, Melloch MR, Lundstrom MS. Minority-carrier lifetime and photon recycling in n-GaAs Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 10: 990-995. DOI: 10.1116/1.577892  0.399
1992 Lush GB, MacMillan HF, Keyes BM, Levi DH, Melloch MR, Ahrenkiel RK, Lundstrom MS. A study of minority carrier lifetime versus doping concentration in n-type GaAs grown by metalorganic chemical vapor deposition Journal of Applied Physics. 72: 1436-1442. DOI: 10.1063/1.351704  0.414
1992 Lush GB, Melloch MR, Lundstrom MS, Levi DH, Ahrenkiel RK, MacMillan HF. Microsecond lifetimes and low interface recombination velocities in moderately doped n-GaAs thin films Applied Physics Letters. 61: 2440-2442. DOI: 10.1063/1.108190  0.414
1992 Lovejoy ML, Melloch MR, Lundstrom MS, Ahrenkiel RK. Minority hole mobility in n+GaAs Applied Physics Letters. 61: 2683-2684. DOI: 10.1063/1.108108  0.391
1992 Lovejoy ML, Melloch MR, Lundstrom MS, Keyes BM, Ahrenkiel RK, De Lyon TJ, Woodall JM. Comparative study of minority electron properties in p+-GaAs doped with beryllium and carbon Applied Physics Letters. 61: 822-824. DOI: 10.1063/1.107756  0.384
1992 Lovejoy ML, Melloch MR, Ahrenkiel RK, Lundstrom MS. Measurement considerations for zero-field time-of-flight studies of minority carrier diffusion in III-V semiconductors Solid State Electronics. 35: 251-259. DOI: 10.1016/0038-1101(92)90229-6  0.354
1992 Ahrenkiel RK. Measurement of minority-carrier lifetime by time-resolved photoluminescence Solid State Electronics. 35: 239-250. DOI: 10.1016/0038-1101(92)90228-5  0.409
1991 Lovejoy ML, Melloch MR, Lundstrom MS, Keyes BM, Ahrenkiel RK, Klausmeier-Brown ME. Zero-field time-of-flight measurements of electron diffusion in p+-gaas Japanese Journal of Applied Physics. 30: L135-L137. DOI: 10.1143/Jjap.30.L135  0.371
1991 Ahrenkiel RK, Keyes BM, Dunlavy DJ. Intensity-dependent minority-carrier lifetime in III-V semiconductors due to saturation of recombination centers Journal of Applied Physics. 70: 225-231. DOI: 10.1063/1.350315  0.404
1991 Lovejoy ML, Melloch MR, Lundstrom MS, Keyes BM, Ahrenkiel RK. Measurement of minority hole zero-field diffusivity in n+-GaAs Institute of Physics Conference Series. 120: 359-363.  0.301
1990 Lovejoy ML, Keyes BM, Klausmeier-Brown ME, Melloch MR, Ahrenkiel RK, Lundstrom MS. Time-of-flight measurements of zero-field electron diffusion in p+-GaAs Conference On Solid State Devices and Materials. 613-616. DOI: 10.7567/Ssdm.1990.D-6-4  0.396
1990 Keyes BM, Kuryla MS, Dunlavy DJ, Ahrenkiel RK, Asher SE, Partain LD, Liu DD. Minority carrier diffusion length of p-GaAs determined by time of flight Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 8: 2004-2008. DOI: 10.1116/1.576796  0.356
1990 Partain LD, Liu DD, Kuryla MS, Ahrenkiel RK, Asher SE. Diffusion length and interface recombination velocity measurement of a GaAs solar cell using two emitter fabrications and quantum yield Solar Cells. 28: 223-232. DOI: 10.1016/0379-6787(90)90056-B  0.379
1990 Lundstrom MS, Klausmeier-Brown ME, Melloch MR, Ahrenkiel RK, Keyes BM. Device-related material properties of heavily doped gallium arsenide Solid State Electronics. 33: 693-704. DOI: 10.1016/0038-1101(90)90182-E  0.375
1990 Nozik AJ, Parsons CA, Dunlavy DJ, Keyes BM, Ahrenkiel RK. Dependence of hot carrier luminescence on barrier thickness in GaAs/AlGaAs superlattices and multiple quantum wells Solid State Communications. 75: 297-301. DOI: 10.1016/0038-1098(90)90900-V  0.363
1989 Ahrenkiel RK, Dunlavy DJ, Keyes B, Vernon SM, Dixon TM, Tobin SP, Miller KL, Hayes RE. Ultralong minority-carrier lifetime epitaxial GaAs by photon recycling Applied Physics Letters. 55: 1088-1090. DOI: 10.1063/1.101713  0.405
1989 Olson JM, Ahrenkiel RK, Dunlavy DJ, Keyes B, Kibbler AE. Ultralow recombination velocity at Ga0.5In0.5P/GaAs heterointerfaces Applied Physics Letters. 55: 1208-1210. DOI: 10.1063/1.101656  0.338
1987 Ahrenkiel RK. Influence of junctions on photoluminescence decay in thin-film devices Journal of Applied Physics. 62: 2937-2941. DOI: 10.1063/1.339376  0.307
1986 Cahen D, Chen YW, Noufi R, Ahrenkiel R, Matson R, Tomkiewicz M, Shen WM. n-CuInSe2 photoelectrochemical cells Solar Cells. 16: 529-548. DOI: 10.1016/0379-6787(86)90108-0  0.324
1986 Matson RJ, Noufi R, Ahrenkiel RK, Powell RC, Cahen D. EBIC investigations of junction activity and the role of oxygen in CdS/CuInSe2 devices Solar Cells. 16: 495-519. DOI: 10.1016/0379-6787(86)90106-7  0.342
1983 Ireland PJ, Stanchina W, Wager JF, Jamjoum O, Kazmerski LL, Ahrenkiel RK, Russell PE. Surface and interface analysis of GaAs-oxyfluorides Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 1: 653-656. DOI: 10.1116/1.572202  0.33
1982 Sheldon P, Ahrenkiel RK, Hayes RE, Russell PE. Interfacial properties of indium tin oxide/indium phosphide devices Applied Physics Letters. 41: 727-729. DOI: 10.1063/1.93656  0.334
1980 Ahrenkiel RK, Dunlavy D, Sievers AJ. Generation of CO2 pulses by free induction decay in KCI:KReO4 Optics Communications. 32: 503-506. DOI: 10.1016/0030-4018(80)90294-1  0.41
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