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Shrawan K. Jha, Ph.D. - Publications

Affiliations: 
2008 Hong Kong Polytechnic University (Hong Kong) 
Area:
Electronics and Electrical Engineering
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25 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2014 Jelenković EV, Kovačević MS, Stupar DZ, Jha S, Bajić JS, Tong KY. Positive bias temperature instability of irradiated n-channel thin film transistors Thin Solid Films. 556: 535-538. DOI: 10.1016/J.Tsf.2014.01.079  0.32
2013 Yan C, Jha SK, Qian JC, Zhou ZF, He B, Ng TW, Li KY, Zhang WJ, Bello I, Klemberg-Sapieha JE, Martinu L. Electronic structure and electrical transport in ternary Al-Mg-B films prepared by magnetron sputtering Applied Physics Letters. 102: 122110. DOI: 10.1063/1.4795298  0.301
2013 Jha SK, Kutsay O, Bello I, Lee ST. ZnO nanorod based low turn-on voltage LEDs with wide electroluminescence spectra Journal of Luminescence. 133: 222-225. DOI: 10.1016/J.Jlumin.2011.10.005  0.364
2012 Wang CD, Jha SK, Chen ZH, Ng TW, Liu YK, Yuen MF, Lu ZZ, Kwok SY, Zapien JA, Bello I, Lee CS, Zhang WJ. Construction and evaluation of high-quality n-ZnO nanorod/p-diamond heterojunctions. Journal of Nanoscience and Nanotechnology. 12: 4560-3. PMID 22905500 DOI: 10.1166/Jnn.2012.6211  0.362
2012 Jha SK, Luan C, To CHJ, Kutsay O, Kovac J, Zapien JA, Bello I, Lee ST. ZnO-nanorod-array/p-GaN high-performance ultra-violet light emitting devices prepared by simple solution synthesis Applied Physics Letters. 101: 211116. DOI: 10.1063/1.4764061  0.37
2012 Liu CP, Chen ZH, Wang HE, Jha SK, Zhang WJ, Bello I, Zapien JA. Enhanced performance by incorporation of zinc oxide nanowire array for organic-inorganic hybrid solar cells Applied Physics Letters. 100: 243102. DOI: 10.1063/1.4728985  0.308
2012 Jha S, Wang H, Kutsay O, Jelenković EV, Chen KJ, Bello I, Kremnican V, Zapien JA. Exploiting nanostructure-thin film interfaces in advanced sensor device configurations Vacuum. 86: 757-760. DOI: 10.1016/J.Vacuum.2011.09.016  0.369
2012 Bello I, Chong YM, Ye Q, Yang Y, He B, Kutsay O, Wang HE, Yan C, Jha SK, Zapien JA, Zhang WJ. Materials with extreme properties: Their structuring and applications Vacuum. 86: 575-585. DOI: 10.1016/J.Vacuum.2011.08.010  0.349
2012 Jelenković EV, Kutsay O, Jha SK, Tam KC, Lee PF, Bello I. Aluminum induced formation of SiGe alloy in Ge/Si/Al thin film structure Journal of Non-Crystalline Solids. 358: 771-775. DOI: 10.1016/J.Jnoncrysol.2011.12.025  0.301
2012 Jha S, Wang CD, Luan CY, Liu CP, Bin H, Kutsay O, Bello I, Zapien JA, Zhang WJ, Lee ST. Near-Ultraviolet Light-Emitting Devices Using Vertical ZnO Nanorod Arrays Journal of Electronic Materials. 41: 853-856. DOI: 10.1007/S11664-012-1919-7  0.384
2012 Liu CP, Wang HE, Ng TW, Chen ZH, Zhang WF, Yan C, Tang YB, Bello I, Martinu L, Zhang WJ, Jha SK. Hybrid photovoltaic cells based on ZnO/Sb2S3/P3HT heterojunctions Physica Status Solidi B-Basic Solid State Physics. 249: 627-633. DOI: 10.1002/Pssb.201147393  0.313
2011 Jha S, Qian JC, Kutsay O, Kovac J, Luan CY, Zapien JA, Zhang W, Lee ST, Bello I. Violet-blue LEDs based on p-GaN/n-ZnO nanorods and their stability. Nanotechnology. 22: 245202. PMID 21508502 DOI: 10.1088/0957-4484/22/24/245202  0.39
2010 Kováč J, Jha SK, Jelenković EV, Kutsay O, Pejović M, Surya C, Zapien JA, Bello I, Srnánek R, Flickyngerová S. Study of temperature distribution in the channels of AlGaN/GaN HEMT devices by μ- Raman characterization techniques Conference Proceedings - the 8th International Conference On Advanced Semiconductor Devices and Microsystems, Asdam 2010. 123-126. DOI: 10.1109/ASDAM.2010.5666315  0.559
2010 Jha SK, Liu CP, Chen ZH, Chen KJ, Bello I, Zapien JA, Zhang W, Lee S. Integrated Nanorods and Heterostructure Field Effect Transistors for Gas Sensing Journal of Physical Chemistry C. 114: 7999-8004. DOI: 10.1021/Jp100461P  0.309
2009 Jha S, Jelenković EV, Pejović MM, Ristić GS, Pejović M, Tong KY, Surya C, Bello I, Zhang WJ. Stability of submicron AlGaN/GaN HEMT devices irradiated by gamma rays Microelectronic Engineering. 86: 37-40. DOI: 10.1016/J.Mee.2008.09.001  0.614
2008 Jha SK, Surya C, Chen KJ, Lau KM, Jelencovic E. Low-frequency noise properties of double channel AlGaN/GaN HEMTs Solid-State Electronics. 52: 606-611. DOI: 10.1016/J.Sse.2007.10.002  0.613
2007 Yu J, Jha SK, Xiao L, Liu Q, Wang P, Surya C, Yang M. AlGaN/GaN heterostructures for non-invasive cell electrophysiological measurements. Biosensors & Bioelectronics. 23: 513-9. PMID 17766103 DOI: 10.1016/J.Bios.2007.06.014  0.558
2007 Jha SK, Zhu CF, Pilkuhn MH, Surya C, Schweizer H. Degradation of low-frequency noise in AlGaN/GaN HEMTS due to hot-electron stressing Fluctuation and Noise Letters. 7: L91-L100. DOI: 10.1142/S0219477507003726  0.615
2007 Jelenkovic EV, Jevtic MM, Tong KY, Pang GKH, Cheung WY, Jha SK. On temperature coefficient of resistance of boron-doped SiGe films deposited by sputtering Materials Science in Semiconductor Processing. 10: 143-149. DOI: 10.1016/J.Mssp.2007.08.001  0.33
2006 Jha SK, Surya C, Chen KJ, Lau KM. Generation recombination noise in dual channel AlGaN/GaN high electron mobility transistor Essderc 2006 - Proceedings of the 36th European Solid-State Device Research Conference. 2006: 105-108.  0.6
2005 Jha SK, Zhu CF, Jelenkovic E, Tong KY, Surya C, Schweizer H, Pilkuhn M. Characterization of 1/f noise in GaN-based HEMTs under high dc voltage stress Proceedings of Spie - the International Society For Optical Engineering. 5844: 256-267. DOI: 10.1117/12.609283  0.518
2005 Jha SK, Leung BH, Surya C, Schweizer H, Pilkhuhn MH. Studies of hot-electron degradation in GaN HEMTs with varying gate recess depths Conference On Optoelectronic and Microelectronic Materials and Devices, Proceedings, Commad. 33-36. DOI: 10.1109/COMMAD.2004.1577485  0.513
2005 Jha S, Gao J, Zhu CF, Jelenkovic E, Tong KY, Pilkuhn M, Surya C, Schweizer H. Low-frequency noise characterization of hot-electron degradation in GaN-based HEMTs Aip Conference Proceedings. 780: 295-298. DOI: 10.1063/1.2036753  0.563
2005 Jha SK, Leung BH, Surya CC, Schweizer H, Pilkhuhn MH. Low-frequency noise characterization in AlGaN/GaN HEMTs with varying gate recess depths Materials Research Society Symposium Proceedings. 831: 465-470.  0.566
2004 Jha SK, Leung BH, Surya CC, Schweizer H, Pilkhuhn MH. Low-Frequency Noise Characterization in AlGaN/GaN HEMTs with Varying Gate Recess Depths Mrs Proceedings. 831: 465-470. DOI: 10.1557/Proc-831-E8.31  0.486
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