| Year |
Citation |
Score |
| 2024 |
Wang Z, Kalathingal V, Trushin M, Liu J, Wang J, Guo Y, Özyilmaz B, Nijhuis CA, Eda G. Upconversion electroluminescence in 2D semiconductors integrated with plasmonic tunnel junctions. Nature Nanotechnology. PMID 38641642 DOI: 10.1038/s41565-024-01650-0 |
0.347 |
|
| 2023 |
Zhu Y, Lim J, Zhang Z, Wang Y, Sarkar S, Ramsden H, Li Y, Yan H, Phuyal D, Gauriot N, Rao A, Hoye RLZ, Eda G, Chhowalla M. Room-Temperature Photoluminescence Mediated by Sulfur Vacancies in 2D Molybdenum Disulfide. Acs Nano. PMID 37418552 DOI: 10.1021/acsnano.3c02103 |
0.505 |
|
| 2023 |
Guo Q, Qi XZ, Zhang L, Gao M, Hu S, Zhou W, Zang W, Zhao X, Wang J, Yan B, Xu M, Wu YK, Eda G, Xiao Z, Yang SA, et al. Ultrathin quantum light source with van der Waals NbOCl crystal. Nature. 613: 53-59. PMID 36600061 DOI: 10.1038/s41586-022-05393-7 |
0.301 |
|
| 2020 |
Leng K, Wang L, Shao Y, Abdelwahab I, Grinblat G, Verzhbitskiy I, Li R, Cai Y, Chi X, Fu W, Song P, Rusydi A, Eda G, Maier SA, Loh KP. Electron tunneling at the molecularly thin 2D perovskite and graphene van der Waals interface. Nature Communications. 11: 5483. PMID 33127900 DOI: 10.1038/s41467-020-19331-6 |
0.35 |
|
| 2020 |
Wang Q, Zhang Q, Luo X, Wang J, Zhu R, Liang Q, Zhang L, Yong JZ, Wong CPY, Eda G, Smet JH, Wee ATS. Optoelectronic Properties of a van der Waals WS2 Monolayer/2D Perovskite Vertical Heterostructure. Acs Applied Materials & Interfaces. PMID 32924427 DOI: 10.1021/Acsami.0C14398 |
0.375 |
|
| 2020 |
Zhang Q, Linardy E, Wang X, Eda G. Excitonic Energy Transfer in Heterostructures of Quasi-2D Perovskite and Monolayer WS2. Acs Nano. PMID 32790345 DOI: 10.1021/Acsnano.0C03893 |
0.352 |
|
| 2020 |
Wang J, Zhou YJ, Xiang D, Ng SJ, Watanabe K, Taniguchi T, Eda G. Polarized Light-Emitting Diodes Based on Anisotropic Excitons in Few-Layer ReS. Advanced Materials (Deerfield Beach, Fla.). e2001890. PMID 32608083 DOI: 10.1002/Adma.202001890 |
0.369 |
|
| 2020 |
Linardy E, Trushin M, Watanabe K, Taniguchi T, Eda G. Electro-Optic Upconversion in van der Waals Heterostructures via Nonequilibrium Photocarrier Tunneling. Advanced Materials (Deerfield Beach, Fla.). e2001543. PMID 32538523 DOI: 10.1002/Adma.202001543 |
0.422 |
|
| 2020 |
Linardy E, Yadav D, Vella D, Verzhbitskiy IA, Watanabe K, Taniguchi T, Pauly F, Trushin M, Eda G. Harnessing exciton-exciton annihilation in two-dimensional semiconductors. Nano Letters. PMID 32078334 DOI: 10.1021/Acs.Nanolett.9B04756 |
0.416 |
|
| 2020 |
Verzhbitskiy IA, Kurebayashi H, Cheng H, Zhou J, Khan S, Feng YP, Eda G. Controlling the magnetic anisotropy in Cr2Ge2Te6 by electrostatic gating Nature Electronics. 3: 460-465. DOI: 10.1038/S41928-020-0427-7 |
0.328 |
|
| 2020 |
Li J, Yuan C, Elias C, Wang J, Zhang X, Ye G, Huang C, Kuball M, Eda G, Redwing JM, He R, Cassabois G, Gil B, Valvin P, Pelini T, et al. Hexagonal Boron Nitride Single Crystal Growth from Solution with a Temperature Gradient Chemistry of Materials. 32: 5066-5072. DOI: 10.1021/Acs.Chemmater.0C00830 |
0.369 |
|
| 2020 |
Loh L, Zhang Z, Bosman M, Eda G. Substitutional doping in 2D transition metal dichalcogenides Nano Research. 1-14. DOI: 10.1007/S12274-020-3013-4 |
0.4 |
|
| 2019 |
Wang J, Lin F, Verzhbitskiy I, Watanabe K, Taniguchi T, Martin J, Eda G. Polarity tunable trionic electroluminescence in monolayer WSe2. Nano Letters. PMID 31517494 DOI: 10.1021/Acs.Nanolett.9B03215 |
0.437 |
|
| 2019 |
Qin Z, Loh L, Wang J, Xu X, Zhang Q, Haas B, Alvarez C, Okuno H, Yong JZ, Schultz T, Koch N, Dan J, Pennycook SJ, Zeng D, Bosman M, ... Eda G, et al. Growth of Nb-Doped Monolayer WS2 from Liquid-Phase Precursor Mixing. Acs Nano. PMID 31491079 DOI: 10.1021/Acsnano.9B05574 |
0.385 |
|
| 2019 |
Jiang J, Li N, Zou J, Zhou X, Eda G, Zhang Q, Zhang H, Li LJ, Zhai T, Wee ATS. Synergistic additive-mediated CVD growth and chemical modification of 2D materials. Chemical Society Reviews. PMID 31410435 DOI: 10.1039/C9Cs00348G |
0.361 |
|
| 2019 |
Pu J, Matsuki K, Chu L, Kobayashi Y, Sasaki S, Miyata Y, Eda G, Takenobu T. Exciton Polarization and Renormalization Effect for Optical Modulation in Monolayer Semiconductors. Acs Nano. PMID 31394038 DOI: 10.1021/Acsnano.9B03563 |
0.392 |
|
| 2019 |
Qiu Z, Trushin M, Fang H, Verzhbitskiy I, Gao S, Laksono E, Yang M, Lyu P, Li J, Su J, Telychko M, Watanabe K, Taniguchi T, Wu J, Neto AHC, ... ... Eda G, et al. Giant gate-tunable bandgap renormalization and excitonic effects in a 2D semiconductor. Science Advances. 5: eaaw2347. PMID 31334350 DOI: 10.1126/Sciadv.Aaw2347 |
0.408 |
|
| 2019 |
Lee K, Li J, Cheng L, Wang J, Kumar D, Wang Q, Chen M, Wu Y, Eda G, Chia EEM, Chang H, Yang H. Sub-Picosecond Carrier Dynamics Induced by Efficient Charge Transfer in MoTe2/WTe2 van der Waals Heterostructures. Acs Nano. PMID 31322858 DOI: 10.1021/Acsnano.9B04701 |
0.401 |
|
| 2019 |
Wang Q, Zhang Q, Zhao X, Zheng YJ, Wang J, Luo X, Dan J, Zhu R, Liang Q, Zhang L, Wong J, He X, Huang Y, Wang X, Pennycook SJ, ... Eda G, et al. High Energy Gain Upconversion in Monolayer Tungsten Disulfide Photodetectors. Nano Letters. PMID 31241969 DOI: 10.1021/Acs.Nanolett.9B02136 |
0.338 |
|
| 2019 |
Zhang Q, Ji Y, Chen Z, Vella D, Wang X, Xu QH, Li Y, Eda G. Controlled Aqueous Synthesis of 2D Hybrid Perovskites with Bright Room Temperature Long-Lived Luminescence. The Journal of Physical Chemistry Letters. PMID 31088074 DOI: 10.1021/Acs.Jpclett.9B00934 |
0.334 |
|
| 2019 |
Wang Z, Chu L, Li L, Yang M, Wang J, Eda G, Loh KP. Modulating Charge Density Wave Order in a 1T-TaS2/black Phosphorus Heterostructure. Nano Letters. PMID 30929451 DOI: 10.1021/Acs.Nanolett.8B04805 |
0.319 |
|
| 2019 |
Lu S, Zhou F, Zhang Q, Eda G, Ji W. Layered Hybrid Perovskites for Highly Efficient Three-Photon Absorbers: Theory and Experimental Observation. Advanced Science (Weinheim, Baden-Wurttemberg, Germany). 6: 1801626. PMID 30828533 DOI: 10.1002/Advs.201801626 |
0.348 |
|
| 2019 |
Ng HK, Abutaha A, Voiry D, Verzhbitskiy I, Cai Y, Zhang G, Liu Y, Wu J, Chhowalla MM, Eda G, Hippalgaonkar K. Effects of structural phase transition on thermoelectric performance in lithium- intercalated Molybdenum Disulfide (LixMoS2). Acs Applied Materials & Interfaces. PMID 30811179 DOI: 10.1021/Acsami.8B22105 |
0.553 |
|
| 2019 |
Verzhbitskiy I, Vella D, Watanabe K, Taniguchi T, Eda G. Suppressed Out-of-Plane Polarizability of Free Excitons in Monolayer WSe. Acs Nano. PMID 30768242 DOI: 10.1021/Acsnano.8B08905 |
0.385 |
|
| 2019 |
Liu T, Liu S, Tu KH, Schmidt H, Chu L, Xiang D, Martin J, Eda G, Ross CA, Garaj S. Crested two-dimensional transistors. Nature Nanotechnology. PMID 30718834 DOI: 10.1038/S41565-019-0361-X |
0.438 |
|
| 2019 |
Chu L, Yudhistira I, Schmidt H, Wu TC, Adam S, Eda G. Phase coherent transport in bilayer and trilayer
MoS2 Physical Review B. 100. DOI: 10.1103/Physrevb.100.125410 |
0.311 |
|
| 2019 |
Auksztol F, Vella D, Verzhbitskiy I, Ng KF, Ho YW, Grieve JA, Viana-Gomes J, Eda G, Ling A. Elastomeric Waveguide on-Chip Coupling of an Encapsulated MoS2 Monolayer Acs Photonics. 6: 595-599. DOI: 10.1021/Acsphotonics.8B01493 |
0.345 |
|
| 2019 |
Xiang D, Liu T, Wang J, Wang P, Wang L, Zheng Y, Wang Y, Gao J, Ang K, Eda G, Hu W, Liu L, Chen W. TMD‐Based Phototransistors: Anomalous Broadband Spectrum Photodetection in 2D Rhenium Disulfide Transistor (Advanced Optical Materials 23/2019) Advanced Optical Materials. 7: 1970088. DOI: 10.1002/Adom.201970088 |
0.303 |
|
| 2018 |
Wang Q, Zhang Q, Zhao X, Luo X, Wong CPY, Wang J, Wan D, Venkatesan T, Pennycook SJ, Loh KP, Eda G, Wee ATS. Photoluminescence upconversion by defects in hexagonal boron nitride. Nano Letters. PMID 30260651 DOI: 10.1021/Acs.Nanolett.8B02804 |
0.325 |
|
| 2018 |
Leng K, Abdelwahab I, Verzhbitskiy I, Telychko M, Chu L, Fu W, Chi X, Guo N, Chen Z, Chen Z, Zhang C, Xu QH, Lu J, Chhowalla M, Eda G, et al. Molecularly thin two-dimensional hybrid perovskites with tunable optoelectronic properties due to reversible surface relaxation. Nature Materials. PMID 30202109 DOI: 10.1038/S41563-018-0164-8 |
0.575 |
|
| 2018 |
Xu X, Schultz T, Qin Z, Severin N, Haas B, Shen S, Kirchhof JN, Opitz A, Koch CT, Bolotin K, Rabe JP, Eda G, Koch N. Microstructure and Elastic Constants of Transition Metal Dichalcogenide Monolayers from Friction and Shear Force Microscopy. Advanced Materials (Deerfield Beach, Fla.). e1803748. PMID 30133006 DOI: 10.1002/Adma.201803748 |
0.37 |
|
| 2018 |
Wang J, Verzhbitskiy I, Eda G. Electroluminescent Devices Based on 2D Semiconducting Transition Metal Dichalcogenides. Advanced Materials (Deerfield Beach, Fla.). e1802687. PMID 30118543 DOI: 10.1002/Adma.201802687 |
0.39 |
|
| 2018 |
Rosa HG, Ho YW, Verzhbitskiy I, Rodrigues MJFL, Taniguchi T, Watanabe K, Eda G, Pereira VM, Gomes JCV. Characterization of the second- and third-harmonic optical susceptibilities of atomically thin tungsten diselenide. Scientific Reports. 8: 10035. PMID 29968813 DOI: 10.1038/S41598-018-28374-1 |
0.302 |
|
| 2018 |
Miyauchi Y, Konabe S, Wang F, Zhang W, Hwang A, Hasegawa Y, Zhou L, Mouri S, Toh M, Eda G, Matsuda K. Evidence for line width and carrier screening effects on excitonic valley relaxation in 2D semiconductors. Nature Communications. 9: 2598. PMID 29968719 DOI: 10.1038/S41467-018-04988-X |
0.372 |
|
| 2018 |
Li S, Lin YC, Zhao W, Wu J, Wang Z, Hu Z, Shen Y, Tang DM, Wang J, Zhang Q, Zhu H, Chu L, Zhao W, Liu C, Sun Z, ... ... Eda G, et al. Vapour-liquid-solid growth of monolayer MoS nanoribbons. Nature Materials. PMID 29686277 DOI: 10.1038/S41563-018-0055-Z |
0.323 |
|
| 2018 |
Zhang Q, Chu L, Zhou F, Ji W, Eda G. Excitonic Properties of Chemically Synthesized 2D Organic-Inorganic Hybrid Perovskite Nanosheets. Advanced Materials (Deerfield Beach, Fla.). e1704055. PMID 29575258 DOI: 10.1002/Adma.201704055 |
0.412 |
|
| 2018 |
Suh J, Tan TL, Zhao W, Park J, Lin DY, Park TE, Kim J, Jin C, Saigal N, Ghosh S, Wong ZM, Chen Y, Wang F, Walukiewicz W, Eda G, et al. Reconfiguring crystal and electronic structures of MoS2 by substitutional doping. Nature Communications. 9: 199. PMID 29335411 DOI: 10.1038/S41467-017-02631-9 |
0.396 |
|
| 2018 |
Wang Z, Dong Z, Zhu H, Jin L, Chiu MH, Li LJ, Xu QH, Eda G, Maier SA, Wee ATS, Qiu CW, Yang JKW. Selectively Plasmon-Enhanced Second-Harmonic Generation from Monolayer Tungsten Diselenide on Flexible Substrates. Acs Nano. PMID 29301073 DOI: 10.1021/Acsnano.7B08682 |
0.342 |
|
| 2017 |
Garcia-Basabe Y, Rocha AR, Vicentin FC, Villegas CEP, Nascimento R, Romani EC, de Oliveira EC, Fechine GJM, Li S, Eda G, Larrude DG. Ultrafast charge transfer dynamics pathways in two-dimensional MoS2-graphene heterostructures: a core-hole clock approach. Physical Chemistry Chemical Physics : Pccp. PMID 29090284 DOI: 10.1039/C7Cp06283D |
0.433 |
|
| 2017 |
Wang S, Wang J, Zhao W, Giustiniano F, Chu L, Verzhbitskiy I, Zhou Yong J, Eda G. Efficient carrier-to-exciton conversion in field emission tunnel diodes based on MIS-type van der Waals heterostack. Nano Letters. PMID 28730821 DOI: 10.1021/Acs.Nanolett.7B02617 |
0.416 |
|
| 2017 |
Mouri S, Zhang W, Kozawa D, Miyauchi Y, Eda G, Matsuda K. Thermal dissociation of inter-layer excitons in MoS2/MoSe2 hetero-bilayers. Nanoscale. PMID 28485422 DOI: 10.1039/C7Nr01598D |
0.323 |
|
| 2017 |
Lei B, Hu Z, Xiang D, Wang J, Eda G, Han C, Chen W. Significantly enhanced optoelectronic performance of tungsten diselenide phototransistor via surface functionalization Nano Research. 10: 1282-1291. DOI: 10.1007/S12274-016-1386-1 |
0.42 |
|
| 2017 |
Lin Y, Li S, Komsa H, Chang L, Krasheninnikov AV, Eda G, Suenaga K. Revealing the Atomic Defects of WS2
Governing Its Distinct Optical Emissions Advanced Functional Materials. 28: 1704210. DOI: 10.1002/Adfm.201704210 |
0.368 |
|
| 2016 |
Belopolski I, Sanchez DS, Ishida Y, Pan X, Yu P, Xu SY, Chang G, Chang TR, Zheng H, Alidoust N, Bian G, Neupane M, Huang SM, Lee CC, Song Y, ... ... Eda G, et al. Discovery of a new type of topological Weyl fermion semimetal state in MoxW1-xTe2. Nature Communications. 7: 13643. PMID 27917858 DOI: 10.1038/Ncomms13643 |
0.316 |
|
| 2016 |
Kozawa D, Carvalho A, Verzhbitskiy I, Giustiniano F, Miyauchi Y, Mouri S, Castro Neto AH, Matsuda K, Eda G. Evidence for fast interlayer energy transfer in MoSe2/WS2 heterostructures. Nano Letters. PMID 27324060 DOI: 10.1021/Acs.Nanolett.6B00801 |
0.357 |
|
| 2016 |
Liu B, Zhao W, Ding Z, Verzhbitskiy I, Li L, Lu J, Chen J, Eda G, Loh KP. Engineering Bandgaps of Monolayer MoS2 and WS2 on Fluoropolymer Substrates by Electrostatically Tuned Many-Body Effects. Advanced Materials (Deerfield Beach, Fla.). PMID 27184600 DOI: 10.1002/Adma.201504876 |
0.399 |
|
| 2016 |
Wang Z, Dong Z, Gu Y, Chang YH, Zhang L, Li LJ, Zhao W, Eda G, Zhang W, Grinblat G, Maier SA, Yang JK, Qiu CW, Wee AT. Giant photoluminescence enhancement in tungsten-diselenide-gold plasmonic hybrid structures. Nature Communications. 7: 11283. PMID 27150276 DOI: 10.1038/Ncomms11283 |
0.364 |
|
| 2016 |
Zheng YJ, Huang YL, Chen Y, Zhao W, Eda G, Spataru CD, Zhang W, Chang YH, Li LJ, Chi D, Quek SY, Wee AT. Heterointerface Screening Effects Between Organic Monolayers and Monolayer Transition Metal Dichalcogenides. Acs Nano. PMID 26792247 DOI: 10.1021/Acsnano.5B07314 |
0.379 |
|
| 2016 |
Wang S, Zhao W, Giustiniano F, Eda G. Effect of oxygen and ozone on p-type doping of ultra-thin WSe2 and MoSe2 field effect transistors. Physical Chemistry Chemical Physics : Pccp. PMID 26790367 DOI: 10.1039/C5Cp07194A |
0.342 |
|
| 2016 |
Eda G, Ji W, Xia F, Zhao H. Feature issue introduction: two-dimensional materials for photonics and optoelectronics Optical Materials Express. 6: 2458. DOI: 10.1364/Ome.6.002458 |
0.375 |
|
| 2016 |
Li LJ, Zhao WJ, Liu B, Ren TH, Eda G, Loh KP. Enhancing charge-density-wave order in 1T-TiSe2 nanosheet by encapsulation with hexagonal boron nitride Applied Physics Letters. 109: 141902. DOI: 10.1063/1.4963885 |
0.365 |
|
| 2016 |
Li LJ, O'Farrell ECT, Loh KP, Eda G, Özyilmaz B, Neto AHC. Controlling many-body states by the electric-field effect in a two-dimensional material Nature. 534: S21-S22. DOI: 10.1038/Nature16175 |
0.374 |
|
| 2016 |
Amara KK, Chen Y, Lin YC, Kumar R, Okunishi E, Suenaga K, Quek SY, Eda G. Dynamic Structural Evolution of Metal-Metal Bonding Network in Monolayer WS2 Chemistry of Materials. 28: 2308-2314. DOI: 10.1021/Acs.Chemmater.6B00379 |
0.349 |
|
| 2016 |
Yamaguchi H, Ogawa S, Watanabe D, Hozumi H, Gao Y, Eda G, Mattevi C, Fujita T, Yoshigoe A, Ishizuka S, Adamska L, Yamada T, Dattelbaum AM, Gupta G, Doorn SK, et al. Valence-band electronic structure evolution of graphene oxide upon thermal annealing for optoelectronics Physica Status Solidi (a) Applications and Materials Science. DOI: 10.1002/Pssa.201532855 |
0.605 |
|
| 2015 |
O'Farrell EC, Avsar A, Tan JY, Eda G, Özyilmaz B. Quantum Transport Detected by Strong Proximity Interaction at a Graphene-WS2 van der Waals Interface. Nano Letters. 15: 5682-8. PMID 26258760 DOI: 10.1021/Acs.Nanolett.5B01128 |
0.416 |
|
| 2015 |
Wu J, Koon GK, Xiang D, Han C, Toh CT, Kulkarni ES, Verzhbitskiy I, Carvalho A, Rodin AS, Koenig SP, Eda G, Chen W, Neto AH, Özyilmaz B. Colossal Ultraviolet Photoresponsivity of Few-Layer Black Phosphorus. Acs Nano. PMID 26207324 DOI: 10.1021/Acsnano.5B01922 |
0.371 |
|
| 2015 |
Schmidt H, Giustiniano F, Eda G. Electronic transport properties of transition metal dichalcogenide field-effect devices: surface and interface effects. Chemical Society Reviews. 44: 7715-36. PMID 26088725 DOI: 10.1039/C5Cs00275C |
0.402 |
|
| 2015 |
Li P, Di Stasio F, Eda G, Fenwick O, McDonnell SO, Anderson HL, Chhowalla M, Cacialli F. Luminescent properties of a water-soluble conjugated polymer incorporating graphene-oxide quantum dots. Chemphyschem : a European Journal of Chemical Physics and Physical Chemistry. 16: 1258-62. PMID 25652189 DOI: 10.1002/Cphc.201402744 |
0.598 |
|
| 2015 |
Zhao W, Ribeiro RM, Eda G. Electronic structure and optical signatures of semiconducting transition metal dichalcogenide nanosheets. Accounts of Chemical Research. 48: 91-9. PMID 25515381 DOI: 10.1021/Ar500303M |
0.436 |
|
| 2015 |
Lee JH, Avsar A, Jung J, Tan JY, Watanabe K, Taniguchi T, Natarajan S, Eda G, Adam S, Castro Neto AH, Özyilmaz B. Van der Waals force: a dominant factor for reactivity of graphene. Nano Letters. 15: 319-25. PMID 25493357 DOI: 10.1021/Nl5036012 |
0.429 |
|
| 2015 |
Mukherjee B, Tseng F, Gunlycke D, Amara KK, Eda G, Simsek E. Complex electrical permittivity of the monolayer molybdenum disulfide (MoS2) in near UV and visible Optical Materials Express. 5: 447-455. DOI: 10.1364/Ome.5.000447 |
0.345 |
|
| 2015 |
Kumar R, Verzhbitskiy I, Eda G. Strong Optical Absorption and Photocarrier Relaxation in 2-D Semiconductors Ieee Journal of Quantum Electronics. 51: 1-6. DOI: 10.1109/Jqe.2015.2470549 |
0.325 |
|
| 2015 |
Li S, Wang S, Tang D, Zhao W, Xu H, Chu L, Bando Y, Golberg D, Eda G. Halide-assisted atmospheric pressure growth of large WSe2 and WS2 monolayer crystals Applied Materials Today. 1: 60-66. DOI: 10.1016/J.Apmt.2015.09.001 |
0.352 |
|
| 2014 |
Chu L, Schmidt H, Pu J, Wang S, Ozyilmaz B, Takenobu T, Eda G. Charge transport in ion-gated mono-, bi-, and trilayer MoS2 field effect transistors. Scientific Reports. 4: 7293. PMID 25465059 DOI: 10.1038/Srep07293 |
0.354 |
|
| 2014 |
Avsar A, Tan JY, Taychatanapat T, Balakrishnan J, Koon GK, Yeo Y, Lahiri J, Carvalho A, Rodin AS, O'Farrell EC, Eda G, Castro Neto AH, Özyilmaz B. Spin-orbit proximity effect in graphene. Nature Communications. 5: 4875. PMID 25255743 DOI: 10.1038/Ncomms5875 |
0.352 |
|
| 2014 |
Kretinin AV, Cao Y, Tu JS, Yu GL, Jalil R, Novoselov KS, Haigh SJ, Gholinia A, Mishchenko A, Lozada M, Georgiou T, Woods CR, Withers F, Blake P, Eda G, et al. Electronic properties of graphene encapsulated with different two-dimensional atomic crystals. Nano Letters. 14: 3270-6. PMID 24844319 DOI: 10.1021/Nl5006542 |
0.44 |
|
| 2014 |
Wu J, Schmidt H, Amara KK, Xu X, Eda G, Özyilmaz B. Large thermoelectricity via variable range hopping in chemical vapor deposition grown single-layer MoS2. Nano Letters. 14: 2730-4. PMID 24749833 DOI: 10.1021/Nl500666M |
0.427 |
|
| 2014 |
Schmidt H, Wang S, Chu L, Toh M, Kumar R, Zhao W, Neto AH, Martin J, Adam S, Özyilmaz B, Eda G. Transport properties of monolayer MoS2 grown by chemical vapor deposition. Nano Letters. 14: 1909-13. PMID 24640984 DOI: 10.1021/Nl4046922 |
0.438 |
|
| 2014 |
Eda G. Band nesting and photocarrier relaxation in group 6 transition metal dichalcogenide The Japan Society of Applied Physics. DOI: 10.1364/Jsap.2014.17P_C3_1 |
0.352 |
|
| 2014 |
Amara KK, Chu L, Kumar R, Toh M, Eda G. Wet chemical thinning of molybdenum disulfide down to its monolayer Apl Materials. 2: 092509. DOI: 10.1063/1.4893962 |
0.352 |
|
| 2014 |
Tan JY, Avsar A, Balakrishnan J, Koon GKW, Taychatanapat T, O'Farrell ECT, Watanabe K, Taniguchi T, Eda G, Castro Neto AH, Özyilmaz B. Electronic transport in graphene-based heterostructures Applied Physics Letters. 104. DOI: 10.1063/1.4872178 |
0.45 |
|
| 2014 |
Wong LLC, Barg S, Menner A, do Vale Pereira P, Eda G, Chowalla M, Saiz E, Bismarck A. Macroporous polymer nanocomposites synthesised from high internal phase emulsion templates stabilised by reduced graphene oxide Polymer. 55: 395-402. DOI: 10.1016/J.Polymer.2013.09.039 |
0.34 |
|
| 2013 |
Voiry D, Salehi M, Silva R, Fujita T, Chen M, Asefa T, Shenoy VB, Eda G, Chhowalla M. Conducting MoS₂ nanosheets as catalysts for hydrogen evolution reaction. Nano Letters. 13: 6222-7. PMID 24251828 DOI: 10.1021/Nl403661S |
0.549 |
|
| 2013 |
Zhao W, Ribeiro RM, Toh M, Carvalho A, Kloc C, Castro Neto AH, Eda G. Origin of indirect optical transitions in few-layer MoS2, WS2, and WSe2. Nano Letters. 13: 5627-34. PMID 24168432 DOI: 10.1021/Nl403270K |
0.325 |
|
| 2013 |
Zhao W, Ghorannevis Z, Amara KK, Pang JR, Toh M, Zhang X, Kloc C, Tan PH, Eda G. Lattice dynamics in mono- and few-layer sheets of WS2 and WSe2. Nanoscale. 5: 9677-83. PMID 23999910 DOI: 10.1039/C3Nr03052K |
0.395 |
|
| 2013 |
Eda G, Maier SA. Two-dimensional crystals: managing light for optoelectronics. Acs Nano. 7: 5660-5. PMID 23834654 DOI: 10.1021/Nn403159Y |
0.353 |
|
| 2013 |
Voiry D, Yamaguchi H, Li J, Silva R, Alves DC, Fujita T, Chen M, Asefa T, Shenoy VB, Eda G, Chhowalla M. Enhanced catalytic activity in strained chemically exfoliated WS₂ nanosheets for hydrogen evolution. Nature Materials. 12: 850-5. PMID 23832127 DOI: 10.1038/Nmat3700 |
0.515 |
|
| 2013 |
Chhowalla M, Shin HS, Eda G, Li LJ, Loh KP, Zhang H. The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets. Nature Chemistry. 5: 263-75. PMID 23511414 DOI: 10.1038/Nchem.1589 |
0.619 |
|
| 2013 |
Zhao W, Ghorannevis Z, Chu L, Toh M, Kloc C, Tan PH, Eda G. Evolution of electronic structure in atomically thin sheets of WS2 and WSe2. Acs Nano. 7: 791-7. PMID 23256505 DOI: 10.1021/Nn305275H |
0.428 |
|
| 2013 |
Eda G, Nathan A, Wöbkenberg P, Colleaux F, Ghaffarzadeh K, Anthopoulos TD, Chhowalla M. Graphene oxide gate dielectric for graphene-based monolithic field effect transistors Applied Physics Letters. 102: 133108. DOI: 10.1063/1.4799970 |
0.619 |
|
| 2013 |
Petridis C, Lin Y, Savva K, Eda G, Kymakis E, Anthopoulos TD, Stratakis E. Post-fabrication, in situ laser reduction of graphene oxide devices Applied Physics Letters. 102: 093115. DOI: 10.1063/1.4794901 |
0.422 |
|
| 2013 |
King LA, Zhao W, Chhowalla M, Riley DJ, Eda G. Photoelectrochemical properties of chemically exfoliated MoS2 Journal of Materials Chemistry A. 1: 8935-8941. DOI: 10.1039/C3Ta11633F |
0.6 |
|
| 2013 |
Ladak S, Ball JM, Moseley D, Eda G, Branford WR, Chhowalla M, Anthopoulos TD, Cohen LF. Observation of wrinkle induced potential drops in biased chemically derived graphene thin film networks Carbon. 64: 35-44. DOI: 10.1016/J.Carbon.2013.06.051 |
0.457 |
|
| 2013 |
Huang Y, Wu J, Xu X, Ho Y, Ni G, Zou Q, Koon GKW, Zhao W, Castro Neto AH, Eda G, Shen C, Özyilmaz B. An innovative way of etching MoS2: Characterization and mechanistic investigation Nano Research. 6: 200-207. DOI: 10.1007/S12274-013-0296-8 |
0.384 |
|
| 2012 |
Eda G, Fujita T, Yamaguchi H, Voiry D, Chen M, Chhowalla M. Coherent atomic and electronic heterostructures of single-layer MoS2. Acs Nano. 6: 7311-7. PMID 22799455 DOI: 10.1021/Nn302422X |
0.605 |
|
| 2012 |
Chien CT, Li SS, Lai WJ, Yeh YC, Chen HA, Chen IS, Chen LC, Chen KH, Nemoto T, Isoda S, Chen M, Fujita T, Eda G, Yamaguchi H, Chhowalla M, et al. Tunable photoluminescence from graphene oxide. Angewandte Chemie (International Ed. in English). 51: 6662-6. PMID 22623281 DOI: 10.1002/Anie.201200474 |
0.587 |
|
| 2012 |
Stratakis E, Eda G, Yamaguchi H, Kymakis E, Fotakis C, Chhowalla M. Free-standing graphene on microstructured silicon vertices for enhanced field emission properties. Nanoscale. 4: 3069-74. PMID 22531838 DOI: 10.1039/C2Nr30622K |
0.624 |
|
| 2011 |
Eda G, Yamaguchi H, Voiry D, Fujita T, Chen M, Chhowalla M. Photoluminescence from chemically exfoliated MoS2. Nano Letters. 11: 5111-6. PMID 22035145 DOI: 10.1021/Nl201874W |
0.613 |
|
| 2011 |
Eda G, Chhowalla M. Graphene patchwork. Acs Nano. 5: 4265-8. PMID 21657797 DOI: 10.1021/nn202025u |
0.563 |
|
| 2011 |
Yamaguchi H, Murakami K, Eda G, Fujita T, Guan P, Wang W, Gong C, Boisse J, Miller S, Acik M, Cho K, Chabal YJ, Chen M, Wakaya F, Takai M, et al. Field emission from atomically thin edges of reduced graphene oxide. Acs Nano. 5: 4945-52. PMID 21618992 DOI: 10.1021/Nn201043A |
0.572 |
|
| 2011 |
Chen J, Li C, Eda G, Zhang Y, Lei W, Chhowalla M, Milne WI, Deng WQ. Incorporation of graphene in quantum dot sensitized solar cells based on ZnO nanorods. Chemical Communications (Cambridge, England). 47: 6084-6. PMID 21523304 DOI: 10.1039/C1Cc10162E |
0.583 |
|
| 2011 |
Wöbkenberg PH, Eda G, Leem DS, De Mello JC, Bradley DDC, Chhowalla M, Anthopoulos TD. Reduced graphene oxide electrodes for large area organic electronics Advanced Materials. 23: 1558-1562. PMID 21360779 DOI: 10.1002/Adma.201004161 |
0.567 |
|
| 2011 |
Eda G, Ball J, Mattevi C, Acik M, Artiglia L, Granozzi G, Chabal Y, Anthopoulos TD, Chhowalla M. Partially oxidized graphene as a precursor to graphene Journal of Materials Chemistry. 21: 11217. DOI: 10.1039/C1Jm11266J |
0.43 |
|
| 2011 |
Eda G, Yamaguchi H, Voiry D, Fujita T, Chen M, Chhowalla M. Correction to Photoluminescence from Chemically Exfoliated MoS2 Nano Letters. 12: 526-526. DOI: 10.1021/Nl2044887 |
0.527 |
|
| 2010 |
Loh KP, Bao Q, Eda G, Chhowalla M. Graphene oxide as a chemically tunable platform for optical applications. Nature Chemistry. 2: 1015-24. PMID 21107364 DOI: 10.1038/Nchem.907 |
0.62 |
|
| 2010 |
Eda G, Chhowalla M. Chemically derived graphene oxide: towards large-area thin-film electronics and optoelectronics. Advanced Materials (Deerfield Beach, Fla.). 22: 2392-415. PMID 20432408 DOI: 10.1002/Adma.200903689 |
0.616 |
|
| 2010 |
Eda G, Lin YY, Mattevi C, Yamaguchi H, Chen HA, Chen IS, Chen CW, Chhowalla M. Blue photoluminescence from chemically derived graphene oxide. Advanced Materials (Deerfield Beach, Fla.). 22: 505-9. PMID 20217743 DOI: 10.1002/Adma.200901996 |
0.579 |
|
| 2010 |
Matyba P, Yamaguchi H, Eda G, Chhowalla M, Edman L, Robinson ND. Graphene and mobile ions: the key to all-plastic, solution-processed light-emitting devices. Acs Nano. 4: 637-42. PMID 20131906 DOI: 10.1021/Nn9018569 |
0.569 |
|
| 2010 |
Yamaguchi H, Eda G, Mattevi C, Kim H, Chhowalla M. Highly uniform 300 mm wafer-scale deposition of single and multilayered chemically derived graphene thin films. Acs Nano. 4: 524-8. PMID 20050640 DOI: 10.1021/Nn901496P |
0.59 |
|
| 2010 |
Ki W, Li J, Eda G, Chhowalla M. Direct white light emission from inorganic-organic hybrid semiconductor bulk materials Journal of Materials Chemistry. 20: 10676-10679. DOI: 10.1039/C0Jm02213F |
0.562 |
|
| 2009 |
Andre Mkhoyan K, Contryman AW, Silcox J, Stewart DA, Eda G, Mattevi C, Miller S, Chhowalla M. Atomic and electronic structure of graphene-oxide. Nano Letters. 9: 1058-63. PMID 19199476 DOI: 10.1021/Nl8034256 |
0.575 |
|
| 2009 |
Eda G, Chhowalla M. Graphene-based composite thin films for electronics. Nano Letters. 9: 814-8. PMID 19173637 DOI: 10.1021/Nl8035367 |
0.625 |
|
| 2009 |
Unalan HE, Zhang Y, Hiralal P, Dalal S, Chu D, Eda G, Teo KBK, Chhowalla M, Milne WI, Amaratunga GAJ. Zinc oxide nanowire networks for macroelectronic devices Applied Physics Letters. 94: 163501. DOI: 10.1063/1.3120561 |
0.679 |
|
| 2009 |
Eda G, Mattevi C, Yamaguchi H, Kim H, Chhowalla M. Insulator to Semimetal Transition in Graphene Oxide The Journal of Physical Chemistry C. 113: 15768-15771. DOI: 10.1021/Jp9051402 |
0.597 |
|
| 2009 |
Mattevi C, Eda G, Agnoli S, Miller S, Mkhoyan KA, Celik O, Mastrogiovanni D, Cranozzi C, Carfunkel E, Chhowalla M. Evolution of electrical, chemical, and structural properties of transparent and conducting chemically derived craphene thin films Advanced Functional Materials. 19: 2577-2583. DOI: 10.1002/Adfm.200900166 |
0.431 |
|
| 2008 |
Eda G, Fanchini G, Chhowalla M. Large-area ultrathin films of reduced graphene oxide as a transparent and flexible electronic material. Nature Nanotechnology. 3: 270-4. PMID 18654522 DOI: 10.1038/Nnano.2008.83 |
0.644 |
|
| 2008 |
Eda G, Emrah Unalan H, Rupesinghe N, Amaratunga GAJ, Chhowalla M. Field emission from graphene based composite thin films Applied Physics Letters. 93: 233502. DOI: 10.1063/1.3028339 |
0.397 |
|
| 2008 |
Eda G, Lin Y, Miller S, Chen C, Su W, Chhowalla M. Transparent and conducting electrodes for organic electronics from reduced graphene oxide Applied Physics Letters. 92: 233305. DOI: 10.1063/1.2937846 |
0.427 |
|
| 2008 |
Eda G, Fanchini G, Kanwal A, Chhowalla M. Bundling dynamics of single walled carbon nanotubes in aqueous suspensions Journal of Applied Physics. 103: 093118. DOI: 10.1063/1.2919164 |
0.741 |
|
| 2007 |
Parekh BB, Fanchini G, Eda G, Chhowalla M. Improved conductivity of transparent single-wall carbon nanotube thin films via stable postdeposition functionalization Applied Physics Letters. 90: 121913. DOI: 10.1063/1.2715027 |
0.527 |
|
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