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Ji-Woon Yang, Ph.D. - Publications

Affiliations: 
2004 University of Florida, Gainesville, Gainesville, FL, United States 
Area:
Electronics and Electrical Engineering
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23/33 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Song H, Song H, Eadi SB, Choi H, Shin H, Lee JW, Yang J, Lee H. Experimental optimization of post metal annealing on fully depleted-silicon on insulator tunneling field effect transistor Japanese Journal of Applied Physics. 59. DOI: 10.35848/1347-4065/Ab8E1C  0.371
2020 Yi B, Park Y, Yang J. Physics-based compact model of transient leakage current caused by parasitic bipolar junction transistor in gate-all-around MOSFETs Solid-State Electronics. 164: 107739. DOI: 10.1016/J.Sse.2019.107739  0.518
2019 Kim JH, Park CH, Kim SM, Yang JW. Physics-Based Capacitance Model of Drift Region in Laterally Diffused Metal-Oxide Semiconductor and Its Implementation with BSIM4. Journal of Nanoscience and Nanotechnology. 19: 6732-6735. PMID 31027019 DOI: 10.1166/Jnn.2019.17113  0.333
2018 Yi B, Lee BJ, Oh J, Kim J, Kim J, Yang J. Physics-Based Compact Model of Parasitic Bipolar Transistor for Single-Event Transients in FinFETs Ieee Transactions On Nuclear Science. 65: 866-870. DOI: 10.1109/Tns.2018.2796622  0.413
2016 Yi B, Lee CY, Oh JH, Lee BJ, Seo S, Yang JW. Analytical Model of the Parasitic Bipolar Junction Transistor in Low-Doped Double-Gate FinFETs for Pass-Gate Circuits Ieee Transactions On Electron Devices. DOI: 10.1109/Ted.2016.2600625  0.53
2015 Hwang BW, Yang JW, Lee SH. Explicit analytical current-voltage model for double-gate junctionless transistors Ieee Transactions On Electron Devices. 62: 171-177. DOI: 10.1109/Ted.2014.2371075  0.491
2015 Choi WS, Choi IT, You BS, Yang JW, Ju MJ, Kim HK. Dye-Sensitized Tandem Solar Cells with Extremely High Open-Circuit Voltage Using Co(II)/Co(III) Electrolyte Israel Journal of Chemistry. 55: 1002-1010. DOI: 10.1002/Ijch.201400204  0.349
2014 Choi IT, You BS, Eom YK, Ju MJ, Choi WS, Kang SH, Kang MS, Seo KD, Hong JY, Song SH, Yang J, Kim HK. Triarylamine-based dual-function coadsorbents with extended π-conjugation aryl linkers for organic dye-sensitized solar cells Organic Electronics. 15: 3316-3326. DOI: 10.1016/J.Orgel.2014.09.008  0.311
2012 Nam J, Kang CY, Kim KP, Yeo H, Lee BJ, Seo S, Yang J. Influence of Ionizing Radiation on Short-Channel Effects in Low-Doped Multi-Gate MOSFETs Ieee Transactions On Nuclear Science. 59: 3021-3026. DOI: 10.1109/Tns.2012.2226751  0.423
2009 Yang JW, Park CS, Smith CE, Adhikari H, Huang J, Heh D, Majhi P, Jammy R. Mitigation of complementary metal-oxide-semiconductor variability with metal gate metal-oxide-semiconductor field-effect transistors Japanese Journal of Applied Physics. 48. DOI: 10.1143/Jjap.48.04C056  0.442
2009 Lu Z, Fossum JG, Yang J, Harris HR, Trivedi VP, Chu M, Thompson SE. A Simplified Superior Floating-Body/Gate DRAM Cell Ieee Electron Device Letters. 30: 282-284. DOI: 10.1109/Led.2008.2012006  0.617
2008 Kang CY, Yang J, Oh J, Choi R, Suh YJ, Floresca HC, Kim J, Kim M, Lee BH, Tseng H, Jammy R. Effects of Film Stress Modulation Using TiN Metal Gate on Stress Engineering and Its Impact on Device Characteristics in Metal Gate/High- $k$ Dielectric SOI FinFETs Ieee Electron Device Letters. 29: 487-490. DOI: 10.1109/Led.2008.919782  0.386
2007 Yang J, Zeitzoff PM, Tseng H. Highly Manufacturable Double-Gate FinFET With Gate-Source/Drain Underlap Ieee Transactions On Electron Devices. 54: 1464-1470. DOI: 10.1109/Ted.2007.896387  0.476
2007 Oh J, Majhi P, Lee H, Yoo O, Banerjee S, Kang CY, Yang J, Harris R, Tseng H, Jammy R. Improved Electrical Characteristics of Ge-on-Si Field-Effect Transistors With Controlled Ge Epitaxial Layer Thickness on Si Substrates Ieee Electron Device Letters. 28: 1044-1046. DOI: 10.1109/Led.2007.908502  0.316
2007 Oh J, Majhi P, Kang CY, Yang J, Tseng H, Jammy R. Thermal stability of nanoscale Ge metal-oxide-semiconductor capacitors with ZrO2 high-k gate dielectrics on Ge epitaxial layers Applied Physics Letters. 90: 202102. DOI: 10.1063/1.2740108  0.405
2006 Yang JW, Pham D, Zeitzoff P, Huff H, Brown G. Optimization of source/drain extension for robust speed performance to process variation in undoped double-gate CMOS International Symposium On Vlsi Technology, Systems, and Applications, Proceedings. 48-49. DOI: 10.1109/VTSA.2006.251061  0.325
2006 Kim S, Fossum J, Yang J. Modeling and Significance of Fringe Capacitance in Nonclassical CMOS Devices With Gate–Source/Drain Underlap Ieee Transactions On Electron Devices. 53: 2143-2150. DOI: 10.1109/Ted.2006.880369  0.66
2005 Yang J, Fossum JG. On the feasibility of nanoscale triple-gate CMOS transistors Ieee Transactions On Electron Devices. 52: 1159-1164. DOI: 10.1109/Ted.2005.848109  0.682
2004 Yang J, Fossum JG, Workman GO, Huang C. A physical model for gate-to-body tunneling current and its effects on floating-body PD/SOI CMOS devices and circuits Solid-State Electronics. 48: 259-270. DOI: 10.1016/S0038-1101(03)00272-7  0.665
1999 Lee J, Kim H, Yang J, Lee W, Oh J, Oh M, Koh Y. Comparison of hole mobility in LOCOS-isolated thin-film SOI p-channel MOSFET's fabricated on various SOI substrates Ieee Electron Device Letters. 20: 176-178. DOI: 10.1109/55.753758  0.347
1998 Koh Y, Oh M, Lee J, Yang J, Lee W, Kim H. Body-contacted SOI MOSFET structure and its application to DRAM Ieee Transactions On Electron Devices. 45: 1063-1070. DOI: 10.1109/16.669531  0.454
1998 Lee J, Nam M, Oh J, Yang J, Lee W, Kim H, Oh M, Koh Y. Effects of buried oxide stress on thin-film silicon-on-insulator metal–oxide–semiconductor field-effect transistor Applied Physics Letters. 72: 677-679. DOI: 10.1063/1.120842  0.388
1997 Koh Y, Choi J, Nam M, Yang J. Body-contacted SOI MOSFET structure with fully bulk CMOS compatible layout and process Ieee Electron Device Letters. 18: 102-104. DOI: 10.1109/55.556094  0.42
Low-probability matches (unlikely to be authored by this person)
2017 Lee BJ, Lee BJ, Lee J, Yang J, Kwon K. Effects of plasma treatment on the electrical reliability of multilayer MoS2 field-effect transistors Thin Solid Films. 637: 32-36. DOI: 10.1016/J.Tsf.2017.02.014  0.3
2012 Jin G, Yoo IH, Pack SP, Yang JW, Ha UH, Paek SH, Seo S. Lens-free shadow image based high-throughput continuous cell monitoring technique. Biosensors & Bioelectronics. 38: 126-31. PMID 22664383 DOI: 10.1016/J.Bios.2012.05.022  0.299
2007 Lee BH, Kang CY, Kirsch P, Heh D, Young CD, Park H, Yang J, Bersuker G, Krishnan S, Choi R, Lee HD. Electric-field-driven dielectric breakdown of metal-insulator-metal hafnium silicate Applied Physics Letters. 91. DOI: 10.1063/1.2825288  0.291
2012 Kwak YH, Choi DS, Kim YN, Kim H, Yoon DH, Ahn SS, Yang JW, Yang WS, Seo S. Flexible glucose sensor using CVD-grown graphene-based field effect transistor. Biosensors & Bioelectronics. 37: 82-7. PMID 22609556 DOI: 10.1016/J.Bios.2012.04.042  0.266
2016 Roy M, Seo D, Oh S, Yang JW, Seo S. A review of recent progress in lens-free imaging and sensing. Biosensors & Bioelectronics. PMID 27503410 DOI: 10.1016/J.Bios.2016.07.115  0.245
2015 Susanto D, Kim H, Kim JY, Lim SH, Yang JW, Choi SA, Chung KY. Effect of (Mg, Al) double doping on the thermal decomposition of LiMn2O4 cathodes investigated by time-resolved X-ray diffraction Current Applied Physics. 15: S27-S31. DOI: 10.1016/J.Cap.2015.01.027  0.228
2020 Geunsoo Y, Kim D, Yang JW, Barraud S, Brevard L, Ghibaudo G, Lee JW. Reduction of random telegraph noise by high pressure deuterium annealing for p-type omega-gate nanowire FET. Nanotechnology. PMID 32559755 DOI: 10.1088/1361-6528/ab9e90  0.216
2009 Adhikari H, Harris HR, Smith CE, Yang JIW, Coss B, Parthasarathy S, Nguyen BY, Patruno P, Krishnamohan T, Cayrefourcq I, Majhi P, Jammy R. High mobility SiGe shell-Si core omega gate pFETs International Symposium On Vlsi Technology, Systems, and Applications, Proceedings. 136-138. DOI: 10.1109/VTSA.2009.5159327  0.178
2019 Harris R, Hussain M, Smith C, Yang J, Barnett J, Sassman B, Song S, Lee B, Tseng H, Jammy R. Critical Components of FinFet Integration: Examining the Density Trade-off and Process Integration for FinFET Implementation Ecs Transactions. 11: 331-338. DOI: 10.1149/1.2778390  0.115
2005 Lee S, Kim J, Sohn H, Yang J. Changes in aroma characteristics during the preparation of red ginseng estimated by electronic nose, sensory evaluation and gas chromatography/mass spectrometry Sensors and Actuators B: Chemical. 106: 7-12. DOI: 10.1016/J.SNB.2004.05.030  0.027
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