Year |
Citation |
Score |
2008 |
Nichols BM, Haley R, Mushrush M, Feist R, Gerbi J, Lemon B, Nilsson R, Sprague S, Tesch R, Torka S, Yeung S, Bernius MT. Exploration of binary ternary photosensitive thin film silver selenides: Prediction, preparation, and characterization Conference Record of the Ieee Photovoltaic Specialists Conference. DOI: 10.1109/PVSC.2008.4922786 |
0.387 |
|
2007 |
Sumant AV, Grierson DS, Gerbi JE, Carlisle JA, Auciello O, Carpick RW. Surface chemistry and bonding configuration of ultrananocrystalline diamond surfaces and their effects on nanotribological properties Physical Review B - Condensed Matter and Materials Physics. 76. DOI: 10.1103/Physrevb.76.235429 |
0.46 |
|
2007 |
Gerbi JE, Abelson JR. Low temperature magnetron sputter deposition of polycrystalline silicon thin films using high flux ion bombardment Journal of Applied Physics. 101: 063508. DOI: 10.1063/1.2710301 |
0.715 |
|
2006 |
Birrell J, Gerbi JE, Auciello OA, Carlisle JA. Investigating the role of hydrogen in ultra-nanocrystalline diamond thin film growth. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 18: S1771-6. PMID 21690864 DOI: 10.1088/0953-8984/18/32/S08 |
0.454 |
|
2006 |
Chatterjee A, Jayaraman S, Gerbi JE, Kumar N, Abelson JR, Bellon P, Polycarpou AA, Chevalier JP. Tribological behavior of hafnium diboride thin films Surface and Coatings Technology. 201: 4317-4322. DOI: 10.1016/J.Surfcoat.2006.08.086 |
0.687 |
|
2006 |
Jayaraman S, Gerbi JE, Yang Y, Kim DY, Chatterjee A, Bellon P, Girolami GS, Chevalier JP, Abelson JR. HfB2 and Hf-B-N hard coatings by chemical vapor deposition Surface and Coatings Technology. 200: 6629-6633. DOI: 10.1016/J.Surfcoat.2005.11.040 |
0.719 |
|
2005 |
Gerbi JE, Birrell J, Sardela M, Carlisle JA. Macrotexture and growth chemistry in ultrananocrystalline diamond thin films Thin Solid Films. 473: 41-48. DOI: 10.1016/J.Tsf.2004.06.155 |
0.488 |
|
2005 |
Birrell J, Gerbi JE, Auciello O, Gibson JM, Johnson J, Carlisle JA. Interpretation of the Raman spectra of ultrananocrystalline diamond Diamond and Related Materials. 14: 86-92. DOI: 10.1016/J.Diamond.2004.07.012 |
0.42 |
|
2004 |
Auciello O, Birrell J, Carlisle JA, Gerbi JE, Xiao X, Peng B, Espinosa HD. Materials science and fabrication processes for a new MEMS technology based on ultrananocrystalline diamond thin films Journal of Physics Condensed Matter. 16: R539-R552. DOI: 10.1088/0953-8984/16/16/R02 |
0.527 |
|
2004 |
Williams OA, Curat S, Gerbi JE, Gruen DM, Jackman RB. Publisher's Note: " n -type conductivity in ultrananocrystalline diamond films" (Appl. Phys. Lett.85, 1680 (2004)) Applied Physics Letters. 85: 5106-5106. DOI: 10.1063/1.1829716 |
0.352 |
|
2004 |
Williams OA, Curat S, Gerbi JE, Gruen DM, Jackman RB. n-type conductivity in ultrananocrystalline diamond films Applied Physics Letters. 85: 1680-1682. DOI: 10.1063/1.1785288 |
0.503 |
|
2004 |
Xiao X, Birrell J, Gerbi JE, Auciello O, Carlisle JA. Low temperature growth of ultrananocrystalline diamond Journal of Applied Physics. 96: 2232-2239. DOI: 10.1063/1.1769609 |
0.502 |
|
2003 |
Peng B, Espinosa H, Moldovan N, Xiao X, Auciello O, Carlisle J, Gruen D, Divan R, Mancini D, Gerbi J, Birrell J. Strength of Ultrananocrystalline Diamond Thin films – Identification of Weibull Parameters Mrs Proceedings. 778. DOI: 10.1557/PROC-778-U2.10 |
0.396 |
|
2003 |
Grynaviski NMH, Auciello O, Carlisle JA, Gerbi JE, Gruen DM, Moore JF, Zinovev A, Firestone MA. Ultrananocrystalline Diamond-Biomolecular Composites: Towards BioMEMS Mrs Proceedings. 773. DOI: 10.1557/PROC-773-N11.4 |
0.333 |
|
2003 |
Gerbi JE, Auciello O, Birrell J, Gruen DM, Alphenaar BW, Carlisle JA. Electrical contacts to ultrananocrystalline diamond Applied Physics Letters. 83: 2001-2003. DOI: 10.1063/1.1609043 |
0.459 |
|
2003 |
Gerbi JE, Voyles PM, Treacy MMJ, Gibson JM, Abelson JR. Increasing medium-range order in amorphous silicon with low-energy ion bombardment Applied Physics Letters. 82: 3665-3667. DOI: 10.1063/1.1578164 |
0.624 |
|
2003 |
Birrell J, Gerbi JE, Auciello O, Gibson JM, Gruen DM, Carlisle JA. Bonding structure in nitrogen doped ultrananocrystalline diamond Journal of Applied Physics. 93: 5606-5612. DOI: 10.1063/1.1564880 |
0.47 |
|
2003 |
Yang W, Auciello O, Butler JE, Cai W, Carlisle JA, Gerbi JE, Gruen DM, Knickerbocker T, Lasseter TL, Russell JN, Smith LM, Hamers RJ. Erratum: DNA-modified nanocrystalline diamond thin-films as stable, biologically active substrates Nature Materials. 2: 63-63. DOI: 10.1038/Nmat809 |
0.485 |
|
2003 |
Yang W, Auciello O, Butler JE, Cai W, Carlisle JA, Gerbi JE, Gruen DM, Knickerbocker T, Lasseter TL, Russell JN, Smith LM, Hamers RJ. Preparation and electrochemical characterization of DNA-modified nanocrystalline diamond films Materials Research Society Symposium - Proceedings. 737: 555-560. |
0.381 |
|
2002 |
Yang W, Auciello O, Butler JE, Cai W, Carlisle JA, Gerbi JE, Gruen DM, Knickerbocker T, Lasseter TL, Russell JN, Smith LM, Hamers RJ. DNA-modified nanocrystalline diamond thin-films as stable, biologically active substrates. Nature Materials. 1: 253-7. PMID 12618788 DOI: 10.1038/Nmat779 |
0.476 |
|
2002 |
Espinosa HD, Peng B, Kim KH, Prorok BC, Moldovan N, Xiao XC, Gerbi JE, Birrell J, Auciello O, Carlisle JA, Gruen DM, Mancini DC. Mechanical properties of ultrananocrystalline diamond thin films for MEMS applications Materials Research Society Symposium - Proceedings. 741: 213-218. DOI: 10.1557/Proc-741-J9.2 |
0.444 |
|
2002 |
Espinosa H, Peng B, Kim K, Prorok B, Moldovan N, Xiao X, Gerbi J, Birrell J, Auciello O, Carlisle J, Gruen D, Mancini D. Mechanical Properties of Ultrananocrystalline Diamond Thin Films for MEMS Applications Mrs Proceedings. 741. DOI: 10.1557/PROC-741-J9.2 |
0.351 |
|
2001 |
Voyles PM, Gerbi JE, Treacy MM, Gibson JM, Abelson JR. Absence of an abrupt phase change from polycrystalline to amorphous in silicon with deposition temperature. Physical Review Letters. 86: 5514-7. PMID 11415289 DOI: 10.1103/Physrevlett.86.5514 |
0.649 |
|
2001 |
Gerbi JE, Voyles PM, Treacy MMJ, Gibson JM, Chen W, Heuser BJ, Abelson JR. Control of medium range order in amorphous silicon via ion and neutral bombardment Materials Research Society Symposium - Proceedings. 664. DOI: 10.1557/Proc-664-A27.3 |
0.548 |
|
2001 |
Gerbi JE, Voyles PM, Treacy MMJ, Gibson JM, Chen W, Heuser BJ, Abelson JR. Control of Medium Range Order in Amorphous Silicon via Ion and Neutral Bombardment Mrs Proceedings. 664. DOI: 10.1557/PROC-664-A27.3 |
0.615 |
|
2001 |
Gerbi JE, Abelson JR. Deposition of microcrystalline silicon: Direct evidence for hydrogen-induced surface mobility of Si adspecies Journal of Applied Physics. 89: 1463-1469. DOI: 10.1063/1.1334639 |
0.676 |
|
2001 |
Voyles PM, Gerbi JE, Treacy M, Gibson JM, Abelson JR. Increased medium-range order in amorphous silicon with increased substrate temperature Journal of Non-Crystalline Solids. 45-52. DOI: 10.1016/S0022-3093(01)00652-4 |
0.651 |
|
2000 |
Gerbi JE, Abelson JR. Microstructural Control Of Thin Film Si Using Low Energy, High Flux Ions In Reactive Magnetron Sputter Deposition Mrs Proceedings. 609. DOI: 10.1557/Proc-609-A5.3 |
0.695 |
|
1998 |
Gerbi JE, Voyles P, Gibson JM, Abelson OJR. Enhanced Crystallinity of Microcrystalline Silicon Thin Films Using Deuterium in Reactive Magnetron Sputter Deposition at 230°C Mrs Proceedings. 507. DOI: 10.1557/Proc-507-429 |
0.561 |
|
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