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Umesh Mishra - Publications

Affiliations: 
Electrical & Computer Engineering University of California, Santa Barbara, Santa Barbara, CA, United States 
Area:
Electronics & Photonics
Website:
https://engineering.ucsb.edu/people/umesh-mishra
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160 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2021 Wang J, Li H, Li H, Keller S, Mishra UK, Nener BD, Parish G, Atkin R. Effects of surface oxidation on the pH-dependent surface charge of oxidized aluminum gallium nitride. Journal of Colloid and Interface Science. 603: 604-614. PMID 34217948 DOI: 10.1016/j.jcis.2021.06.126  0.584
2020 Wang J, Zhang X, Li H, Wang C, Li H, Keller S, Mishra UK, Nener BD, Parish G, Atkin R. pH-Dependent surface charge at the interfaces between aluminum gallium nitride (AlGaN) and aqueous solution revealed by surfactant adsorption. Journal of Colloid and Interface Science. 583: 331-339. PMID 33007589 DOI: 10.1016/J.Jcis.2020.09.036  0.588
2020 Pasayat SS, Gupta C, Wang Y, DenBaars SP, Nakamura S, Keller S, Mishra UK. Compliant Micron-Sized Patterned InGaN Pseudo-Substrates Utilizing Porous GaN. Materials (Basel, Switzerland). 13. PMID 31947918 DOI: 10.3390/Ma13010213  0.677
2020 Liu W, Sayed I, Gupta C, Li H, Keller S, Mishra U. An improved methodology for extracting interface state density at Si3N4/GaN Applied Physics Letters. 116: 22104. DOI: 10.1063/1.5125645  0.723
2020 Wurm C, Ahmadi E, Wu F, Hatui N, Keller S, Speck J, Mishra U. Growth of high-quality N-polar GaN on bulk GaN by plasma-assisted molecular beam epitaxy Solid State Communications. 305: 113763. DOI: 10.1016/J.Ssc.2019.113763  0.762
2019 Wang J, Zhang X, Wang C, Li H, Li H, Keller S, Mishra UK, Nener BD, Parish G, Atkin R. pH-dependent surface properties of the gallium nitride - Solution interface mapped by surfactant adsorption. Journal of Colloid and Interface Science. 556: 680-688. PMID 31499439 DOI: 10.1016/J.Jcis.2019.08.079  0.575
2019 Sayed I, Liu W, Chan S, Gupta C, Guidry M, Li H, Keller S, Mishra U. Net negative fixed interface charge for Si3N4 and SiO2 grown in situ on 000-1 N-polar GaN Applied Physics Letters. 115: 32103. DOI: 10.1063/1.5111148  0.843
2017 Asadnia M, Myers M, Umana-Membreno GA, Sanders TM, Mishra UK, Nener BD, Baker MV, Parish G. Ca(2+) detection utilising AlGaN/GaN transistors with ion-selective polymer membranes. Analytica Chimica Acta. 987: 105-110. PMID 28916033 DOI: 10.1016/J.Aca.2017.07.066  0.488
2017 Agarwal A, Gupta C, Alhassan A, Mates T, Keller S, Mishra U. Abrupt GaN/p-GaN:Mg junctions grown via metalorganic chemical vapor deposition Applied Physics Express. 10: 111002. DOI: 10.7567/Apex.10.111002  0.805
2017 Agarwal A, Tahhan M, Mates T, Keller S, Mishra U. Suppression of Mg propagation into subsequent layers grown by MOCVD Journal of Applied Physics. 121: 25106. DOI: 10.1063/1.4972031  0.799
2016 Chan SH, Tahhan M, Liu X, Bisi D, Gupta C, Koksaldi O, Li H, Mates T, DenBaars SP, Keller S, Mishra UK. Metalorganic chemical vapor deposition and characterization of (Al,Si)O dielectrics for GaN-based devices Japanese Journal of Applied Physics. 55. DOI: 10.7567/Jjap.55.021501  0.795
2016 Tahhan M, Nedy J, Chan SH, Lund C, Li H, Gupta G, Keller S, Mishra U. Optimization of a chlorine-based deep vertical etch of GaN demonstrating low damage and low roughness Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 34. DOI: 10.1116/1.4944054  0.791
2016 Zheng X, Guidry M, Li H, Ahmadi E, Hestroffer K, Romanczyk B, Wienecke S, Keller S, Mishra UK. N-Polar GaN MIS-HEMTs on Sapphire with High Combination of Power Gain Cutoff Frequency and Three-Terminal Breakdown Voltage Ieee Electron Device Letters. 37: 77-80. DOI: 10.1109/Led.2015.2502253  0.827
2016 Agarwal A, Gupta C, Enatsu Y, Keller S, Mishra U. Controlled low Si doping and high breakdown voltages in GaN on sapphire grown by MOCVD Semiconductor Science and Technology. 31: 125018. DOI: 10.1088/0268-1242/31/12/125018  0.835
2016 Bisi D, Chan SH, Liu X, Yeluri R, Keller S, Meneghini M, Meneghesso G, Zanoni E, Mishra UK. On trapping mechanisms at oxide-traps in Al2O3/GaN metal-oxide-semiconductor capacitors Applied Physics Letters. 108. DOI: 10.1063/1.4944466  0.815
2016 Laurent MA, Gupta G, Suntrup DJ, DenBaars SP, Mishra UK. Barrier height inhomogeneity and its impact on (Al,In,Ga)N Schottky diodes Journal of Applied Physics. 119. DOI: 10.1063/1.4941531  0.816
2016 Fireman MN, Browne DA, Mishra UK, Speck JS. Isotype InGaN/GaN heterobarrier diodes by ammonia molecular beam epitaxy Journal of Applied Physics. 119. DOI: 10.1063/1.4941323  0.365
2016 Liu X, Jackson CM, Wu F, Mazumder B, Yeluri R, Kim J, Keller S, Arehart AR, Ringel SA, Speck JS, Mishra UK. Electrical and structural characterizations of crystallized Al2O3/GaN interfaces formed by in situ metalorganic chemical vapor deposition Journal of Applied Physics. 119. DOI: 10.1063/1.4939157  0.834
2016 Hestroffer K, Lund C, Li H, Keller S, Speck JS, Mishra UK. Plasma-assisted molecular beam epitaxy growth diagram of InGaN on (0001)GaN for the optimized synthesis of InGaN compositional grades Physica Status Solidi (B) Basic Research. 253: 626-629. DOI: 10.1002/Pssb.201552550  0.718
2016 Mishra U, Huffaker D, Choquette K, Palacios T, Matioli E, Myers R, Rajan S, Wang H. Compound Semiconductors Physica Status Solidi (a) Applications and Materials Science. 213: 850. DOI: 10.1002/Pssa.201670627  0.416
2016 Gupta C, Enatsu Y, Gupta G, Keller S, Mishra UK. High breakdown voltage p-n diodes on GaN on sapphire by MOCVD Physica Status Solidi (a) Applications and Materials Science. DOI: 10.1002/Pssa.201532554  0.779
2015 Soligo R, Chowdhury S, Gupta G, Mishra U, Saraniti M. The Role of the Base Stack on the AC Performance of GaN Hot Electron Transistor Ieee Electron Device Letters. 36: 669-671. DOI: 10.1109/Led.2015.2436922  0.692
2015 Gupta G, Ahmadi E, Hestroffer K, Acuna E, Mishra UK. Common emitter current gain >1 in III-N hot electron transistors with 7-nm GaN/InGaN base Ieee Electron Device Letters. 36: 439-441. DOI: 10.1109/Led.2015.2416345  0.81
2015 Gupta G, Laurent M, Li H, Suntrup DJ, Acuna E, Keller S, Mishra UK. Design space of III-N hot electron transistors using AlGaN and InGaN polarization-dipole barriers Ieee Electron Device Letters. 36: 23-25. DOI: 10.1109/Led.2014.2373375  0.835
2015 Podolska A, Broxtermann D, Malindretos J, Umana-Membreno GA, Keller S, Mishra UK, Rizzi A, Nener BD, Parish G. Method to Predict and Optimize Charge Sensitivity of Ungated AlGaN/GaN HEMT-Based Ion Sensor Without Use of Reference Electrode Ieee Sensors Journal. 15: 5320-5326. DOI: 10.1109/Jsen.2015.2439692  0.574
2015 Kikkawa T, Hosoda T, Imanishi K, Shono K, Itabashi K, Ogino T, Miyazaki Y, Mochizuki A, Kiuchi K, Kanamura M, Kamiyama M, Akiyama S, Kawasaki S, Maeda T, Asai Y, ... ... Mishra U, et al. 600 v JEDEC-qualified highly reliable GaN HEMTs on Si substrates Technical Digest - International Electron Devices Meeting, Iedm. 2015: 2.6.1-2.6.4. DOI: 10.1109/IEDM.2014.7046968  0.784
2015 Li H, Keller S, Chan SH, Lu J, Denbaars SP, Mishra UK. Unintentional gallium incorporation in AlN and its impact on the electrical properties of GaN/AlN and GaN/AlN/AlGaN heterostructures Semiconductor Science and Technology. 30. DOI: 10.1088/0268-1242/30/5/055015  0.814
2015 Ahmadi E, Wu F, Li H, Kaun SW, Tahhan M, Hestroffer K, Keller S, Speck JS, Mishra UK. N-face GaN/AlN/GaN/InAlN and GaN/AlN/AlGaN/GaN/InAlN high-electron-mobility transistor structures grown by plasma-assisted molecular beam epitaxy on vicinal substrates Semiconductor Science and Technology. 30: 1-8. DOI: 10.1088/0268-1242/30/5/055012  0.839
2015 Kaun SW, Mazumder B, Fireman MN, Kyle ECH, Mishra UK, Speck JS. Pure AlN layers in metal-polar AlGaN/AlN/GaN and AlN/GaN heterostructures grown by low-temperature ammonia-based molecular beam epitaxy Semiconductor Science and Technology. 30. DOI: 10.1088/0268-1242/30/5/055010  0.349
2015 Keller S, Lund C, Whyland T, Hu Y, Neufeld C, Chan S, Wienecke S, Wu F, Nakamura S, Speck JS, Denbaars SP, Mishra UK. InGaN lattice constant engineering via growth on (In,Ga)N/GaN nanostripe arrays Semiconductor Science and Technology. 30. DOI: 10.1088/0268-1242/30/10/105020  0.813
2015 Hestroffer K, Wu F, Li H, Lund C, Keller S, Speck JS, Mishra UK. Relaxed c-plane InGaN layers for the growth of strain-reduced InGaN quantum wells Semiconductor Science and Technology. 30. DOI: 10.1088/0268-1242/30/10/105015  0.742
2015 Suntrup DJ, Gupta G, Li H, Keller S, Mishra UK. Measuring the signature of bias and temperature-dependent barrier heights in III-N materials using a hot electron transistor Semiconductor Science and Technology. 30. DOI: 10.1088/0268-1242/30/10/105003  0.824
2015 Suntrup DJ, Gupta G, Li H, Keller S, Mishra UK. Barrier height fluctuations in InGaN polarization dipole diodes Applied Physics Letters. 107. DOI: 10.1063/1.4934876  0.79
2015 Fireman MN, Browne DA, Mazumder B, Speck JS, Mishra UK. Demonstration of isotype GaN/AlN/GaN heterobarrier diodes by NH3-molecular beam epitaxy Applied Physics Letters. 106. DOI: 10.1063/1.4921633  0.325
2015 Yeluri R, Lu J, Hurni CA, Browne DA, Chowdhury S, Keller S, Speck JS, Mishra UK. Design, fabrication, and performance analysis of GaN vertical electron transistors with a buried p/n junction Applied Physics Letters. 106. DOI: 10.1063/1.4919866  0.813
2015 Kim J, Laurent MA, Li H, Lal S, Mishra UK. Barrier reduction via implementation of InGaN interlayer in wafer-bonded current aperture vertical electron transistors consisting of InGaAs channel and N-polar GaN drain Applied Physics Letters. 106. DOI: 10.1063/1.4906074  0.826
2014 Gupta G, Laurent M, Lu J, Keller S, Mishra UK. Design of polarization-dipole-induced isotype heterojunction diodes for use in III-N hot electron transistors Applied Physics Express. 7. DOI: 10.7567/Apex.7.014102  0.833
2014 Gupta G, Laurent M, Li H, Suntrup DJ, Acuna E, Keller S, Mishra U. Common emitter operation of III-N HETs using AlGaN and InGaN polarization-dipole induced barriers Device Research Conference - Conference Digest, Drc. 255-256. DOI: 10.1109/DRC.2014.6872394  0.802
2014 Yeluri R, Lu J, Browne D, Hurni CA, Chowdhury S, Keller S, Speck JS, Mishra UK. Low ON-resistance and high current GaN Vertical Electron Transistors with buried p-GaN layers Device Research Conference - Conference Digest, Drc. 253-254. DOI: 10.1109/DRC.2014.6872393  0.743
2014 Kim J, Lal S, Laurent MA, Mishra UK. Vertical electron transistors with In0.53Ga0.47As channel and N-polar In0.1Ga0.9N/GaN drain achieved by direct wafer-bonding Device Research Conference - Conference Digest, Drc. 221-222. DOI: 10.1109/DRC.2014.6872377  0.371
2014 Kaun SW, Ahmadi E, Mazumder B, Wu F, Kyle ECH, Burke PG, Mishra UK, Speck JS. GaN-based high-electron-mobility transistor structures with homogeneous lattice-matched InAlN barriers grown by plasma-assisted molecular beam epitaxy Semiconductor Science and Technology. 29. DOI: 10.1088/0268-1242/29/4/045011  0.755
2014 Keller S, Li H, Laurent M, Hu Y, Pfaff N, Lu J, Brown DF, Fichtenbaum NA, Speck JS, Denbaars SP, Mishra UK. Recent progress in metal-organic chemical vapor deposition of (0001¯) N-polar group-III nitrides Semiconductor Science and Technology. 29. DOI: 10.1088/0268-1242/29/11/113001  0.827
2014 Suntrup DJ, Gupta G, Li H, Keller S, Mishra UK. Measurement of the hot electron mean free path and the momentum relaxation rate in GaN Applied Physics Letters. 105. DOI: 10.1063/1.4905367  0.809
2014 Yeluri R, Liu X, Guidry M, Koksaldi OS, Lal S, Kim J, Lu J, Keller S, Mishra UK. Dielectric stress tests and capacitance-voltage analysis to evaluate the effect of post deposition annealing on Al2O3 films deposited on GaN Applied Physics Letters. 105. DOI: 10.1063/1.4903344  0.786
2014 Laurent MA, Gupta G, Wienecke S, Muqtadir AA, Keller S, Denbaars SP, Mishra UK. Extraction of net interfacial polarization charge from Al0.54In0.12Ga0.34N/GaN high electron mobility transistors grown by metalorganic chemical vapor deposition Journal of Applied Physics. 116. DOI: 10.1063/1.4901834  0.842
2014 Ahmadi E, Chalabi H, Kaun SW, Shivaraman R, Speck JS, Mishra UK. Contribution of alloy clustering to limiting the two-dimensional electron gas mobility in AlGaN/GaN and InAlN/GaN heterostructures: Theory and experiment Journal of Applied Physics. 116. DOI: 10.1063/1.4896967  0.665
2014 Mazumder B, Liu X, Yeluri R, Wu F, Mishra UK, Speck JS. Atom probe tomography studies of Al2O3 gate dielectrics on GaN Journal of Applied Physics. 116. DOI: 10.1063/1.4896498  0.735
2014 Killat N, Uren MJ, Keller S, Kolluri S, Mishra UK, Kuball M. Impact ionization in N-polar AlGaN/GaN high electron mobility transistors Applied Physics Letters. 105. DOI: 10.1063/1.4892449  0.737
2014 Liu X, Kim J, Suntrup DJ, Wienecke S, Tahhan M, Yeluri R, Chan SH, Lu J, Li H, Keller S, Mishra UK. In situ metalorganic chemical vapor deposition of Al2O 3 on N-face GaN and evidence of polarity induced fixed charge Applied Physics Letters. 104. DOI: 10.1063/1.4886768  0.807
2014 Lu J, Zheng X, Guidry M, Denninghoff D, Ahmadi E, Lal S, Keller S, Denbaars SP, Mishra UK. Engineering the (In, Al, Ga)N back-barrier to achieve high channel-conductivity for extremely scaled channel-thicknesses in N-polar GaN high-electron-mobility-transistors Applied Physics Letters. 104. DOI: 10.1063/1.4867508  0.813
2014 Ahmadi E, Shivaraman R, Wu F, Wienecke S, Kaun SW, Keller S, Speck JS, Mishra UK. Elimination of columnar microstructure in N-face InAlN, lattice-matched to GaN, grown by plasma-assisted molecular beam epitaxy in the N-rich regime Applied Physics Letters. 104. DOI: 10.1063/1.4866435  0.834
2014 Liu X, Chan SH, Wu F, Li Y, Keller S, Speck JS, Mishra UK. Metalorganic chemical vapor deposition of Al2O3 using trimethylaluminum and O2 precursors: Growth mechanism and crystallinity Journal of Crystal Growth. 408: 78-84. DOI: 10.1016/J.Jcrysgro.2014.09.029  0.715
2013 Dasgupta S, Lu J, Nidhi, Raman A, Hurni C, Gupta G, Speck JS, Mishra UK. Estimation of hot electron relaxation time in GaN using hot electron transistors Applied Physics Express. 6. DOI: 10.7567/Apex.6.034002  0.748
2013 Chowdhury S, Mishra UK. Lateral and vertical transistors using the Algan/GAN Heterostructure Ieee Transactions On Electron Devices. 60: 3060-3066. DOI: 10.1109/Ted.2013.2277893  0.561
2013 Lal S, Lu J, Gupta G, Thibeault BJ, Denbaars SP, Mishra UK. Impact of gate-aperture overlap on the channel-pinch off in ingaas/ingan-based bonded aperture vertical electron transistor Ieee Electron Device Letters. 34: 1500-1502. DOI: 10.1109/Led.2013.2286954  0.759
2013 Kim J, Toledo NG, Lal S, Lu J, Buehl TE, Mishra UK. Wafer-bonded p-n heterojunction of GaAs and chemomechanically polished N-polar GaN Ieee Electron Device Letters. 34: 42-44. DOI: 10.1109/Led.2012.2225137  0.827
2013 Denninghoff D, Lu J, Ahmadi E, Keller S, Mishra UK. N-polar GaN/InAlN/AlGaN MIS-HEMTs with 1.89 S/mm extrinsic transconductance, 4 A/mm drain current, 204 GHz fT and 405 GHz f max Device Research Conference - Conference Digest, Drc. 197-198. DOI: 10.1109/DRC.2013.6633861  0.801
2013 Meneghesso G, Meneghini M, Bisi D, Rossetto I, Cester A, Mishra UK, Zanoni E. Trapping phenomena in AlGaN/GaN HEMTs: A study based on pulsed and transient measurements Semiconductor Science and Technology. 28. DOI: 10.1088/0268-1242/28/7/074021  0.308
2013 Chowdhury S, Swenson BL, Wong MH, Mishra UK. Current status and scope of gallium nitride-based vertical transistors for high-power electronics application Semiconductor Science and Technology. 28. DOI: 10.1088/0268-1242/28/7/074014  0.795
2013 Wong MH, Keller S, Dasgupta NS, Denninghoff DJ, Kolluri S, Brown DF, Lu J, Fichtenbaum NA, Ahmadi E, Singisetti U, Chini A, Rajan S, Denbaars SP, Speck JS, Mishra UK. N-polar GaN epitaxy and high electron mobility transistors Semiconductor Science and Technology. 28. DOI: 10.1088/0268-1242/28/7/074009  0.823
2013 Singisetti U, Wong MH, Mishra UK. High-performance N-polar GaN enhancement-mode device technology Semiconductor Science and Technology. 28. DOI: 10.1088/0268-1242/28/7/074006  0.303
2013 Kaun SW, Wong MH, Mishra UK, Speck JS. Molecular beam epitaxy for high-performance Ga-face GaN electron devices Semiconductor Science and Technology. 28. DOI: 10.1088/0268-1242/28/7/074001  0.32
2013 Schaake CA, Brown DF, Swenson BL, Keller S, Speck JS, Mishra UK. A donor-like trap at the InGaN/GaN interface with net negative polarization and its possible consequence on internal quantum efficiency Semiconductor Science and Technology. 28. DOI: 10.1088/0268-1242/28/10/105021  0.811
2013 Farrell RM, Al-Heji AA, Neufeld CJ, Chen X, Iza M, Cruz SC, Keller S, Nakamura S, DenBaars SP, Mishra UK, Speck JS. Effect of intentional p-GaN surface roughening on the performance of InGaN/GaN solar cells Applied Physics Letters. 103. DOI: 10.1063/1.4844955  0.708
2013 Liu X, Kim J, Yeluri R, Lal S, Li H, Lu J, Keller S, Mazumder B, Speck JS, Mishra UK. Fixed charge and trap states of in situ Al2O3 on Ga-face GaN metal-oxide-semiconductor capacitors grown by metalorganic chemical vapor deposition Journal of Applied Physics. 114. DOI: 10.1063/1.4827201  0.824
2013 Yeluri R, Liu X, Swenson BL, Lu J, Keller S, Mishra UK. Capacitance-voltage characterization of interfaces between positive valence band offset dielectrics and wide bandgap semiconductors Journal of Applied Physics. 114. DOI: 10.1063/1.4819402  0.823
2013 Liu X, Yeluri R, Kim J, Lal S, Raman A, Lund C, Wienecke S, Lu J, Laurent M, Keller S, Mishra UK. In-situ metalorganic chemical vapor deposition and capacitance-voltage characterizations of Al2O3 on Ga-face GaN metal-oxide-semiconductor capacitors Applied Physics Letters. 103. DOI: 10.1063/1.4817385  0.812
2013 Sasikumar A, Arehart AR, Martin-Horcajo S, Romero MF, Pei Y, Brown D, Recht F, Di Forte-Poisson MA, Calle F, Tadjer MJ, Keller S, Denbaars SP, Mishra UK, Ringel SA. Direct comparison of traps in InAlN/GaN and AlGaN/GaN high electron mobility transistors using constant drain current deep level transient spectroscopy Applied Physics Letters. 103. DOI: 10.1063/1.4813862  0.829
2013 Lu J, Denninghoff D, Yeluri R, Lal S, Gupta G, Laurent M, Keller S, Denbaars SP, Mishra UK. Very high channel conductivity in ultra-thin channel N-polar GaN/(AlN, InAlN, AlGaN) high electron mobility hetero-junctions grown by metalorganic chemical vapor deposition Applied Physics Letters. 102. DOI: 10.1063/1.4809997  0.804
2013 Cardwell DW, Sasikumar A, Arehart AR, Kaun SW, Lu J, Keller S, Speck JS, Mishra UK, Ringel SA, Pelz JP. Spatially-resolved spectroscopic measurements of Ec - 0.57 eV traps in AlGaN/GaN high electron mobility transistors Applied Physics Letters. 102. DOI: 10.1063/1.4806980  0.447
2013 Mazumder B, Kaun SW, Lu J, Keller S, Mishra UK, Speck JS. Atom probe analysis of AlN interlayers in AlGaN/AlN/GaN heterostructures Applied Physics Letters. 102. DOI: 10.1063/1.4798249  0.408
2013 Kaun SW, Wong MH, Lu J, Mishra UK, Speck JS. Reduction of carbon proximity effects by including AlGaN back barriers in HEMTs on free-standing GaN Electronics Letters. 49: 903-905. DOI: 10.1049/El.2013.1723  0.399
2013 Arehart AR, Sasikumar A, Rajan S, Via GD, Poling B, Winningham B, Heller ER, Brown D, Pei Y, Recht F, Mishra UK, Ringel SA. Direct observation of 0.57 eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors Solid-State Electronics. 80: 19-22. DOI: 10.1016/J.Sse.2012.09.010  0.818
2013 Podolska A, Hool LC, Pfleger KDG, Mishra UK, Parish G, Nener BD. AlGaN/GaN-based biosensor for label-free detection of biological activity Sensors and Actuators, B: Chemical. 177: 577-582. DOI: 10.1016/J.Snb.2012.11.086  0.496
2013 Denbaars SP, Feezell D, Kelchner K, Pimputkar S, Pan CC, Yen CC, Tanaka S, Zhao Y, Pfaff N, Farrell R, Iza M, Keller S, Mishra U, Speck JS, Nakamura S. Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays Acta Materialia. 61: 945-951. DOI: 10.1016/J.Actamat.2012.10.042  0.331
2013 Das NC, Reed ML, Sampath AV, Shen H, Wraback M, Farrell RM, Iza M, Cruz SC, Lang JR, Young NG, Terao Y, Neufeld CJ, Keller S, Nakamura S, Denbaars SP, ... Mishra UK, et al. Optimization of annealing process for improved InGaN solar cell performance Journal of Electronic Materials. 42: 3467-3470. DOI: 10.1007/S11664-013-2794-6  0.724
2013 Liu X, Yeluri R, Lu J, Mishra UK. Effects of H2O pretreatment on the capacitance-voltage characteristics of atomic-layer-deposited Al2O3 on Ga-face GaN metal-oxide-semiconductor capacitors Journal of Electronic Materials. 42: 33-39. DOI: 10.1007/S11664-012-2246-8  0.758
2013 Farrell RM, Friedman DJ, Young NG, Perl EE, Singh N, Lang JR, Neufeld CJ, Iza M, Cruz SC, Keller S, McMahon WE, Nakamura S, DenBaars SP, Mishra UK, Bowers JE, et al. InGaN-based solar cells and high-performance broadband optical coatings for ultrahigh efficiency hybrid multijunction device designs Cleo: Applications and Technology, Cleo_at 2013. ATh4N.4.  0.686
2013 Connelly BC, Woodward NT, Metcalfe GD, Rodak LE, Das NC, Reed ML, Sampath AV, Shen H, Wraback M, Farrell RM, Iza M, Cruz SC, Lang JR, Young NG, Terao Y, ... ... Mishra UK, et al. Study of temperature-dependent carrier transport in a p-GaN/i-InGaN/n-GaN solar cell heterostructure using ultrafast spectroscopy Cleo: Science and Innovations, Cleo_si 2013. CTh1M.7.  0.718
2013 Connelly BC, Woodward NT, Metcalfe GD, Rodak LE, Das NC, Reed ML, Sampath AV, Shen H, Wraback M, Farrell RM, Iza M, Cruz SC, Lang JR, Young NG, Terao Y, ... ... Mishra UK, et al. Study of temperature-dependent carrier transport in a p-GaN/i-InGaN/n-GaN solar cell heterostructure using ultrafast spectroscopy Cleo: Science and Innovations, Cleo_si 2013. CTh1M.7.  0.718
2013 Farrell RM, Friedman DJ, Young NG, Perl EE, Singh N, Lang JR, Neufeld CJ, Iza M, Cruz SC, Keller S, McMahon WE, Nakamura S, DenBaars SP, Mishra UK, Bowers JE, et al. InGaN-based solar cells and high-performance broadband optical coatings for ultrahigh efficiency hybrid multijunction device designs Cleo: Applications and Technology, Cleo_at 2013. ATh4N.4.  0.686
2012 Dasgupta S, Nidhi, Wu F, Speck JS, Mishra UK. Growth and characterization of n-polar GaN films on Si(111) by plasma assisted molecular beam epitaxy Japanese Journal of Applied Physics. 51. DOI: 10.1143/Jjap.51.115503  0.497
2012 Lu J, Hu YL, Brown DF, Wu F, Keller S, Speck JS, DenBaars SP, Mishra UK. Charge and mobility enhancements in in-polar InAl(Ga)N/Al(Ga)N/GaN heterojunctions grown by metal-organic chemical vapor deposition using a graded growth strategy Japanese Journal of Applied Physics. 51. DOI: 10.1143/Jjap.51.115502  0.468
2012 Wong MH, Singisetti U, Lu J, Speck JS, Mishra UK. Anomalous output conductance in N-polar GaN high electron mobility transistors Ieee Transactions On Electron Devices. 59: 2988-2995. DOI: 10.1109/Ted.2012.2211599  0.491
2012 Das NC, Reed ML, Sampath AV, Shen H, Wraback M, Farrell RM, Iza M, Cruz SC, Lang JR, Young NG, Terao Y, Neufeld CJ, Keller S, Nakamura S, Denbaars SP, ... Mishra UK, et al. Heterogeneous integration of InGaN and Silicon solar cells for enhanced energy harvesting Conference Record of the Ieee Photovoltaic Specialists Conference. 3076-3079. DOI: 10.1109/PVSC.2012.6318231  0.666
2012 Gao F, Chen D, Lu B, Tuller HL, Thompson CV, Keller S, Mishra UK, Palacios T. Impact of moisture and fluorocarbon passivation on the current collapse of AlGaN/GaN HEMTs Ieee Electron Device Letters. 33: 1378-1380. DOI: 10.1109/Led.2012.2206556  0.326
2012 Nidhi, Dasgupta S, Lu J, Speck JS, Mishra UK. Scaled self-aligned N-Polar GaN/AlGaN MIS-HEMTs with f T of 275 GHz Ieee Electron Device Letters. 33: 961-963. DOI: 10.1109/Led.2012.2194130  0.586
2012 Denninghoff DJ, Dasgupta S, Lu J, Keller S, Mishra UK. Design of high-aspect-ratio T-Gates on N-Polar GaN/AlGaN MIS-HEMTs for High f max Ieee Electron Device Letters. 33: 785-787. DOI: 10.1109/Led.2012.2191134  0.824
2012 Nidhi, Dasgupta S, Lu J, Speck JS, Mishra UK. Self-aligned N-Polar GaN/InAlN MIS-HEMTs with record extrinsic transconductance of 1105 mS/mm Ieee Electron Device Letters. 33: 794-796. DOI: 10.1109/Led.2012.2190965  0.559
2012 Sasikumar A, Arehart A, Kolluri S, Wong MH, Keller S, Denbaars SP, Speck JS, Mishra UK, Ringel SA. Access-region defect spectroscopy of DC-stressed N-polar GaN MIS-HEMTs Ieee Electron Device Letters. 33: 658-660. DOI: 10.1109/Led.2012.2188710  0.67
2012 Chowdhury S, Wong MH, Swenson BL, Mishra UK. CAVET on bulk GaN substrates achieved with MBE-regrown AlGaN/GaN layers to suppress dispersion Ieee Electron Device Letters. 33: 41-43. DOI: 10.1109/Led.2011.2173456  0.811
2012 Lal S, Lu J, Thibeault B, Denbaars SP, Mishra UK. Experimental demonstration of a wafer-bonded heterostructure based unipolar transistor with In 0.53Ga 0.47as channel and III-N drain Device Research Conference - Conference Digest, Drc. 165-166. DOI: 10.1109/DRC.2012.6257041  0.304
2012 Denninghoff D, Lu J, Laurent M, Ahmadi E, Keller S, Mishra UK. N-polar GaN/InAlN MIS-HEMT with 400-GHz f max Device Research Conference - Conference Digest, Drc. 151-152. DOI: 10.1109/DRC.2012.6256939  0.802
2012 Podolska A, Seeber RM, Mishra UK, Pfleger KDG, Parish G, Nener BD. Detection of biological reactions by AlGaN/GaN biosensor Conference On Optoelectronic and Microelectronic Materials and Devices, Proceedings, Commad. 75-76. DOI: 10.1109/COMMAD.2012.6472367  0.53
2012 Kaun SW, Burke PG, Hoi Wong M, Kyle ECH, Mishra UK, Speck JS. Effect of dislocations on electron mobility in AlGaN/GaN and AlGaN/AlN/GaN heterostructures Applied Physics Letters. 101. DOI: 10.1063/1.4773510  0.325
2012 Keller S, Pfaff N, Denbaars SP, Mishra UK. Polarization spectroscopy of N-polar AlGaN/GaN multi quantum wells grown on vicinal (000 1̄) GaN Applied Physics Letters. 101. DOI: 10.1063/1.4764070  0.325
2012 Hurni CA, Kroemer H, Mishra UK, Speck JS. Capacitance-voltage profiling on polar III-nitride heterostructures Journal of Applied Physics. 112. DOI: 10.1063/1.4757940  0.335
2012 Mazumder B, Wong MH, Hurni CA, Zhang JY, Mishra UK, Speck JS. Asymmetric interfacial abruptness in N-polar and Ga-polar GaN/AlN/GaN heterostructures Applied Physics Letters. 101. DOI: 10.1063/1.4748116  0.381
2012 Singisetti U, Hoi Wong M, Mishra UK. Interface roughness scattering in ultra-thin N-polar GaN quantum well channels Applied Physics Letters. 101. DOI: 10.1063/1.4732795  0.306
2012 Kaun SW, Wong MH, Mishra UK, Speck JS. Correlation between threading dislocation density and sheet resistance of AlGaN/AlN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy Applied Physics Letters. 100. DOI: 10.1063/1.4730951  0.301
2012 Toledo NG, Mishra UK. InGaN solar cell requirements for high-efficiency integrated III-nitride/non-III-nitride tandem photovoltaic devices Journal of Applied Physics. 111. DOI: 10.1063/1.4723831  0.781
2012 Cardwell DW, Arehart AR, Poblenz C, Pei Y, Speck JS, Mishra UK, Ringel SA, Pelz JP. Nm-scale measurements of fast surface potential transients in an AlGaN/GaN high electron mobility transistor Applied Physics Letters. 100. DOI: 10.1063/1.4714536  0.624
2012 Hu YL, Farrell RM, Neufeld CJ, Iza M, Cruz SC, Pfaff N, Simeonov D, Keller S, Nakamura S, Denbaars SP, Mishra UK, Speck JS. Effect of quantum well cap layer thickness on the microstructure and performance of InGaN/GaN solar cells Applied Physics Letters. 100. DOI: 10.1063/1.4704189  0.729
2012 Hodges C, Killat N, Kaun SW, Wong MH, Gao F, Palacios T, Mishra UK, Speck JS, Wolverson D, Kuball M. Optical investigation of degradation mechanisms in AlGaN/GaN high electron mobility transistors: Generation of non-radiative recombination centers Applied Physics Letters. 100. DOI: 10.1063/1.3693427  0.313
2012 Toledo NG, Friedman DJ, Farrell RM, Perl EE, Lin CT, Bowers JE, Speck JS, Mishra UK. Design of integrated III-nitride/non-III-nitride tandem photovoltaic devices Journal of Applied Physics. 111. DOI: 10.1063/1.3690907  0.784
2012 Nath DN, Park PS, Esposto M, Brown D, Keller S, Mishra UK, Rajan S. Polarization engineered 1-dimensional electron gas arrays Journal of Applied Physics. 111. DOI: 10.1063/1.3687938  0.579
2012 Yeluri R, Swenson BL, Mishra UK. Interface states at the SiN/AlGaN interface on GaN heterojunctions for Ga and N-polar material Journal of Applied Physics. 111. DOI: 10.1063/1.3687355  0.835
2012 Podolska A, Tham S, Hart RD, Seeber RM, Kocan M, Mishra UK, Pfleger KDG, Parish G, Nener BD. Biocompatibility of semiconducting AlGaN/GaN material with living cells Sensors and Actuators, B: Chemical. 169: 401-406. DOI: 10.1016/J.Snb.2012.04.015  0.538
2012 Lal S, Snow E, Lu J, Swenson B, Keller S, Denbaars SP, Mishra UK. InGaAs-InGaN wafer-bonded current aperture vertical electron transistors (BAVETs) Journal of Electronic Materials. 41: 857-864. DOI: 10.1007/S11664-012-1977-X  0.828
2012 Möreke J, Ťapajna M, Uren MJ, Pei Y, Mishra UK, Kuball M. Effects of gate shaping and consequent process changes on AlGaN/GaN HEMT reliability Physica Status Solidi (a) Applications and Materials Science. 209: 2646-2652. DOI: 10.1002/Pssa.201228395  0.631
2012 Keller S, Lu J, Mishra UK, Denbaars SP, Speck JS. Effect of indium on the conductivity of poly-crystalline GaN grown on high purity fused silica Physica Status Solidi (a) Applications and Materials Science. 209: 431-433. DOI: 10.1002/Pssa.201100349  0.403
2012 Killat N, Uren MJ, Kolluri S, Keller S, Mishra UK, Kuball M. Impact of step edges on trapping behavior in N-polar GaN HEMTs 2012 International Conference On Compound Semiconductor Manufacturing Technology, Cs Mantech 2012.  0.302
2011 Matioli E, Neufeld C, Iza M, Cruz SC, Al-Heji AA, Chen X, Farrell RM, Keller S, DenBaars S, Mishra U, Nakamura S, Speck J, Weisbuch C. High internal and external quantum efficiency InGaN/GaN solar cells Applied Physics Letters. 98. DOI: 10.1063/1.3540501  0.72
2008 Kocan M, Umana-Membreno GA, Kilburn MR, Fletcher IR, Recht F, McCarthy L, Mishra UK, Nener BD, Parish G. Scanning ion probe studies of silicon implantation profiles in AlGaN/GaN HEMT heterostructures Journal of Electronic Materials. 37: 554-557. DOI: 10.1007/S11664-007-0336-9  0.78
2008 Nakamura S, Mishra U, DenBaars S, Speck JS, Wraback M, Arakawa Y, Allerman A, Grandjean N, Shealy J, Krames M, Palacios T, Jena D. Preface: phys. stat. sol. (c) 5/6 Physica Status Solidi (C). 5: 1472-1474. DOI: 10.1002/Pssc.200860019  0.511
2008 Ive T, Ben-Yaacov T, Murai A, Asamizu H, Van De Walle CG, Mishra U, DenBaars SP, Speck JS. Metalorganic chemical vapor deposition of ZnO(0001) thin films on GaN(0001) templates and ZnO(0001) substrates Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 3091-3094. DOI: 10.1002/Pssc.200779197  0.416
2008 Ive T, Ben-Yaacov T, Asamizu H, Van De Walle CG, Mishra U, DenBaars SP, Speck JS. Properties of ZnO(0001) layers grown by metalorganic chemical vapor deposition on GaN(0001) templates Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 1733-1735. DOI: 10.1002/Pssc.200778612  0.454
2007 Waki I, Cohen D, Lal R, Mishra U, DenBaars SP, Nakamura S. Direct water photoelectrolysis with patterned n-GaN Applied Physics Letters. 91: 93519. DOI: 10.1063/1.2769393  0.399
2006 Chichibu SF, Uedono A, Onuma T, Haskell BA, Chakraborty A, Koyama T, Fini PT, Keller S, Denbaars SP, Speck JS, Mishra UK, Nakamura S, Yamaguchi S, Kamiyama S, Amano H, et al. Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors. Nature Materials. 5: 810-6. PMID 16951678 DOI: 10.1038/Nmat1726  0.516
2006 Lin K, Chang C, Pan C, Chyi J, Keller S, Mishra U, DenBaars SP, Sun C. Characterizing the nanoacoustic superlattice in a phonon cavity using a piezoelectric single quantum well Applied Physics Letters. 89: 143103. DOI: 10.1063/1.2358321  0.338
2005 Yu H, McCarthy L, Rajan S, Keller S, Denbaars S, Speck J, Mishra U. Ion implanted AlGaN-GaN HEMTs with nonalloyed ohmic contacts Ieee Electron Device Letters. 26: 283-285. DOI: 10.1109/Led.2005.846583  0.809
2004 Murai A, McCarthy L, Mishra U, Denbaars SP, Kruse C, Figge S, Hommel D. Wafer bonding of GaN and ZnSSe for optoelectronic applications Japanese Journal of Applied Physics, Part 2: Letters. 43: L1275-L1277. DOI: 10.1143/Jjap.43.L1275  0.741
2004 ESTRADA S, HU E, MISHRA U. n-AlGaAs/p-GaAs/n-GaN HETEROJUNCTION BIPOLAR TRANSISTOR: THE FIRST TRANSISTOR FORMED VIA WAFER FUSION International Journal of High Speed Electronics and Systems. 14: 265-284. DOI: 10.1142/S0129156404002338  0.443
2004 Bae C, Krug C, Lucovsky G, Chakraborty A, Mishra U. Surface passivation of n-GaN by nitrided-thin-Ga 2O 3/SiO 2 and Si 3N 4 films Journal of Applied Physics. 96: 2674-2680. DOI: 10.1063/1.1772884  0.642
2004 Bae C, Krug C, Lucovsky G, Chakraborty A, Mishra U. Work-function difference between AL and n-GaN from Al-gated n-GaN/nitrided-thin-Ga 2O 3/SiO 2 metal oxide semiconductor structures Applied Physics Letters. 84: 5413-5415. DOI: 10.1063/1.1767599  0.629
2003 Rajan SI, Sarma PS, Mishra US. Demography of Indian aging, 2001-2051. Journal of Aging & Social Policy. 15: 11-30. PMID 14696687 DOI: 10.1300/J031v15n02_02  0.395
2003 Estrada S, Champlain J, Wang C, Stonas A, Coldren L, DenBaars S, Mishra U, Hu E. Wafer-fused n-AlGaAs/p-GaAs/n-GaN Heterojunction Bipolar Transistor with uid-GaAs Base-Collector Setback Mrs Proceedings. 798. DOI: 10.1557/Proc-798-Y10.20  0.797
2003 Xie S, Paidi V, Coffie R, Keller S, Heikman S, Moran B, Chini A, DenBaars SP, Mishra U, Long S, Rodwell MJW. High-linearity class B power amplifiers in GaN HEMT technology Ieee Microwave and Wireless Components Letters. 13: 284-286. DOI: 10.1109/Lmwc.2003.811682  0.724
2003 Estrada S, Huntington A, Stonas A, Xing H, Mishra U, DenBaars S, Coldren L, Hu E. n-AlGaAs/p-GaAs/n-GaN heterojunction bipolar transistor wafer-fused at 550-750°C Applied Physics Letters. 83: 560-562. DOI: 10.1063/1.1592887  0.45
2003 Estrada S, Xing H, Stonas A, Huntington A, Mishra U, DenBaars S, Coldren L, Hu E. Wafer-fused AlGaAs/GaAs/GaN heterojunction bipolar transistor Applied Physics Letters. 82: 820-822. DOI: 10.1063/1.1541946  0.43
2003 Gao Y, Stonas AR, Ben-Yaacov I, Mishra U, DenBaars SP, Hu EL. AlGaN/GaN current aperture vertical electron transistors fabricated by photoelectrochemical wet etching Electronics Letters. 39: 148-149. DOI: 10.1049/El:20030018  0.8
2003 Ambacher O, Eickhoff M, Link A, Hermann M, Stutzmann M, Bernardini F, Fiorentini V, Smorchkova Y, Speck J, Mishra U, Schaff W, Tilak V, Eastman LF. Electronics and sensors based on pyroelectric AlGaN/GaN heterostructures: Part A: Polarization and pyroelectronics Physica Status Solidi C: Conferences. 1878-1907. DOI: 10.1002/Pssc.200303138  0.702
2002 Shokhovets S, Goldhahn R, Gobsch G, Ambacher O, Smorchkova IP, Speck JS, Mishra U, Link A, Hermann M, Eickhoff M. Electroreflectance and Photoreflectance Studies of Electric Fields in Pt/GaN Schottky Diodes and AlGaN/GaN Heterostructures Mrs Proceedings. 743. DOI: 10.1557/Proc-743-L3.57  0.361
2002 Estrada S, Stonas A, Huntington A, Xing H, Coldren L, DenBaars S, Mishra U, Hu E. The First Wafer-fused AlGaAs-GaAs-GaN Heterojunction Bipolar Transistor Mrs Proceedings. 743. DOI: 10.1557/Proc-743-L12.10  0.478
2002 Lin K, Chern G, Chu S, Sun C, Xing H, Smorchkova Y, Keller S, Mishra U, DenBaars SP. Ultrashort hole capture time in Mg-doped GaN thin films Applied Physics Letters. 81: 3975-3977. DOI: 10.1063/1.1522827  0.315
2002 Link A, Graf T, Ambacher O, Jimenez A, Calleja E, Smorchkova Y, Speck J, Mishra U, Stutzmann M. Transport Properties of 2DEGs in AlGaN/GaN Heterostructures: Spin Splitting and Occupation of Higher Subbands Physica Status Solidi B-Basic Solid State Physics. 234: 805-809. DOI: 10.1002/1521-3951(200212)234:3<805::Aid-Pssb805>3.0.Co;2-G  0.352
2001 Rajan SI, Mishra US, Sarma PS. Health concerns among India's elderly. International Journal of Aging & Human Development. 53: 181-94. PMID 11866377  0.408
2001 Singh M, Singh J, Mishra U. Tailorable Rectification: A study of Vertical Transport in AlGaN/GaN Heterostructures Mrs Proceedings. 693. DOI: 10.1557/Proc-693-I11.38.1  0.31
2001 Haberer ED, Woods M, Stonas A, Chen CH, Keller S, Hansen M, Mishra U, DenBaars S, Bowers J, Hu EL. Investigation of sidewall recombination in GaN using a quantum well probe Materials Research Society Symposium - Proceedings. 639: G11.21.1-G11.21.5. DOI: 10.1557/Proc-639-G11.21  0.339
2001 Chavarkar P, Mishra U. Field effect transistors: FETs and HEMTs Thin Films. 28: 71-145. DOI: 10.1016/S1079-4050(01)80018-1  0.701
2001 Link A, Graf T, Dimitrov R, Ambacher O, Stutzmann M, Smorchkova Y, Mishra U, Speck J. Transport properties of two-dimensional electron gases induced by spontaneous and piezoelectric polarisation in AlGaN/GaN heterostructures Physica Status Solidi B-Basic Solid State Physics. 228: 603-606. DOI: 10.1002/1521-3951(200111)228:2<603::Aid-Pssb603>3.0.Co;2-Y  0.373
2000 Zhang Y, Smorchkova Y, Elsass C, Keller S, Ibbetson J, DenBaars S, Mishra U, Singh J. Polarization effects and transport in AlGaN/GaN system Journal of Vacuum Science & Technology B. 18: 2322-2327. DOI: 10.1116/1.1306298  0.434
2000 Krishnamurthy K, Vetury R, Keller S, Mishra U, Rodwell MJW, Long SI. Broadband GaAs MESFET and GaN HEMT resistive feedback power amplifiers Ieee Journal of Solid-State Circuits. 35: 1285-1292. DOI: 10.1109/4.868037  0.668
2000 Heying B, Smorchkova I, Poblenz C, Elsass C, Fini P, Baars SD, Mishra U, Speck JS. Optimization of the surface morphologies and electron mobilities in GaN grown by plasma-assisted molecular beam epitaxy Applied Physics Letters. 77: 2885-2887. DOI: 10.1063/1.1322370  0.448
2000 Keller S, Parish G, Speck JS, DenBaars SP, Mishra UK. Dislocation reduction in GaN films through selective island growth of InGaN Applied Physics Letters. 77: 2665-2667. DOI: 10.1063/1.1319528  0.638
2000 Tarsa EJ, Kozodoy P, Ibbetson J, Keller BP, Parish G, Mishra U. Solar-blind AlGaN-based inverted heterostructure photodiodes Applied Physics Letters. 77: 316-318. DOI: 10.1063/1.126962  0.622
2000 Haberer ED, Chen C, Abare A, Hansen M, Denbaars S, Coldren L, Mishra U, Hu EL. Channeling as a mechanism for dry etch damage in GaN Applied Physics Letters. 76: 3941-3943. DOI: 10.1063/1.126828  0.346
2000 Sun C, Huang Y, Liang J, Wang J, Gan K, Kao F, Keller S, Mack MP, Mishra U, Denbaars SP. Large near resonance third order nonlinearity in GaN Optical and Quantum Electronics. 32: 619-640. DOI: 10.1023/A:1007076506723  0.327
1999 Jenkins TJ, Kehias L, Parikh P, Ibbetson J, Mishra U, Docter D, Le M, Pusl J, Widman D. Ultrahigh efficiency obtained with GaAs-on-insulator MESFET technology Ieee Journal of Solid-State Circuits. 34: 1239-1245. DOI: 10.1109/4.782082  0.414
1998 Mishra US, Ramanathan M, Rajan SI. Induced abortion potential among Indian women. Social Biology. 45: 278-88. PMID 10085740  0.409
1998 Chavarkar PM, Zhao L, Keller S, Black KA, Hu E, Speck J, Mishra U. Lattice Engineering Using Lateral Oxidation of Alas: an Approach to Generate Substrates With New Lattice Constants Mrs Proceedings. 535. DOI: 10.1557/Proc-535-21  0.383
1998 Bidnyk S, Cho YH, Schmidt TJ, Krasinski J, Song JJ, Keller S, Mishra UK, Denbaars SP. Study of Stimulated Emission in InGaN/GaN Multi-Quantum Wells in the Temperature Range of 175 k to 575 k Mrs Proceedings. 512. DOI: 10.1557/Proc-512-199  0.316
1998 Schmid P, Lipka KM, Ibbetson J, Nguyen N, Mishra U, Pond L, Weitzel C, Kohn E. High-temperature performance of GaAs-based HFET structure containing LT-AlGaAs and LT-GaAs Ieee Electron Device Letters. 19: 225-227. DOI: 10.1109/55.701424  0.305
1998 Hansen PJ, Strausser YE, Erickson AN, Tarsa EJ, Kozodoy P, Brazel EG, Ibbetson JP, Mishra U, Narayanamurti V, DenBaars SP, Speck JS. Scanning capacitance microscopy imaging of threading dislocations in GaN films grown on (0001) sapphire by metalorganic chemical vapor deposition Applied Physics Letters. 72: 2247-2249. DOI: 10.1063/1.121268  0.384
1998 Bidnyk S, Schmidt TJ, Cho YH, Gainer GH, Song JJ, Keller S, Mishra UK, Denbaars SP. High-temperature stimulated emission in optically pumped InGaN/GaN multiquantum wells Applied Physics Letters. 72: 1623-1625. DOI: 10.1063/1.121133  0.358
1997 Kuball M, Jeon E, Song Y, Nurmikko AV, Kozodoy P, Abare A, Keller S, Coldren LA, Mishra UK, DenBaars SP, Steigerwald DA. Gain spectroscopy on InGaN/GaN quantum well diodes Applied Physics Letters. 70: 2580-2582. DOI: 10.1063/1.118925  0.349
1997 Shi SS, Hu EL, Zhang J, Chang Y, Parikh P, Mishra U. Photoluminescence study of hydrogenated aluminum oxide–semiconductor interface Applied Physics Letters. 70: 1293-1295. DOI: 10.1063/1.118555  0.332
1997 Mack M, Abare A, Aizcorbe M, Kozodoy P, Keller S, Mishra UK, Coldren L, DenBaars S. Characteristics of Indium-Gallium-Nitride Multiple-Quantum-Well Blue Laser Diodes Grown by MOCVD Mrs Internet Journal of Nitride Semiconductor Research. 2. DOI: 10.1016/S0022-0248(98)00305-4  0.341
1996 Parikh P, Kiziloglu K, Mondry M, Chavarkar P, Keller B, Denbaars S, Mishra U. Inp-Based Devices And Their Applications For Merged Fet-Hbt Technologies Microwave and Optical Technology Letters. 11: 121-125. DOI: 10.1002/(Sici)1098-2760(19960220)11:3<121::Aid-Mop3>3.0.Co;2-N  0.371
1983 Kohn E, Mishra U, Eastman LF. Short-channel effects in 0.5-µm source-drain spaced vertical GaAs FET's—A first experimental investigation Ieee Electron Device Letters. 4: 125-127. DOI: 10.1109/Edl.1983.25672  0.511
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