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Nicholas A. Fichtenbaum, Ph.D. - Publications

Affiliations: 
2008 Electrical & Computer Engineering University of California, Santa Barbara, Santa Barbara, CA, United States 
Area:
Electronics & Photonics
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36 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2014 Keller S, Li H, Laurent M, Hu Y, Pfaff N, Lu J, Brown DF, Fichtenbaum NA, Speck JS, Denbaars SP, Mishra UK. Recent progress in metal-organic chemical vapor deposition of (0001¯) N-polar group-III nitrides Semiconductor Science and Technology. 29. DOI: 10.1088/0268-1242/29/11/113001  0.806
2013 Wong MH, Keller S, Dasgupta NS, Denninghoff DJ, Kolluri S, Brown DF, Lu J, Fichtenbaum NA, Ahmadi E, Singisetti U, Chini A, Rajan S, Denbaars SP, Speck JS, Mishra UK. N-polar GaN epitaxy and high electron mobility transistors Semiconductor Science and Technology. 28. DOI: 10.1088/0268-1242/28/7/074009  0.78
2011 Wu YF, Coffie R, Fichtenbaum N, Dora Y, Suh CS, Shen L, Parikh P, Mishra UK. Total GaN solution to electrical power conversion Device Research Conference - Conference Digest, Drc. 217-218. DOI: 10.1109/DRC.2011.5994505  0.79
2011 Roy T, Zhang EX, Puzyrev YS, Shen X, Fleetwood DM, Schrimpf RD, Koblmueller G, Chu R, Poblenz C, Fichtenbaum N, Suh CS, Mishra UK, Speck JS, Pantelides ST. Temperature-dependence and microscopic origin of low frequency 1/f noise in GaN/AlGaN high electron mobility transistors Applied Physics Letters. 99. DOI: 10.1063/1.3662041  0.524
2009 Masui H, Keller S, Fellows N, Fichtenbaum NA, Furukawa M, Nakamura S, Mishra UK, DenBaars SP. Luminescence characteristics of N-polar GaN and InGaN films grown by metal organic chemical vapor deposition Japanese Journal of Applied Physics. 48. DOI: 10.1143/Jjap.48.071003  0.491
2008 Chu R, Shen L, Fichtenbaum N, Chen Z, Keller S, DenBaars SP, Mishra UK. Correlation between DC-RF dispersion and gate leakage in deeply recessed GaN/AlGaN/GaN HEMTs Ieee Electron Device Letters. 29: 303-305. DOI: 10.1109/Led.2008.917939  0.742
2008 Pei Y, Chu R, Shen L, Fichtenbaum NA, Chen Z, Brown D, Keller S, Denbaars SP, Mishra UK. Effect of Al composition and gate recess on power performance of AlGaN/ GaN high-electron mobility transistors Ieee Electron Device Letters. 29: 300-302. DOI: 10.1109/Led.2008.917936  0.79
2008 Chu R, Shen L, Fichtenbaum N, Brown D, Keller S, Mishra UK. Plasma treatment for leakage reduction in AlGaN/GaN and GaN Schottky contacts Ieee Electron Device Letters. 29: 297-299. DOI: 10.1109/Led.2008.917814  0.687
2008 Chu R, Shen L, Fichtenbaum N, Brown D, Chen Z, Keller S, DenBaars SP, Mishra UK. V-Gate GaN HEMTs for X-Band power applications Ieee Electron Device Letters. 29: 974-976. DOI: 10.1109/Led.2008.2001639  0.746
2008 Keller S, Suh CS, Fichtenbaum NA, Furukawa M, Chu R, Chen Z, Vijayraghavan K, Rajan S, Denbaars SP, Speck JS, Mishra UK. Influence of the substrate misorientation on the properties of N-polar InGaN/GaN and AlGaN/GaN heterostructures Journal of Applied Physics. 104. DOI: 10.1063/1.3006132  0.726
2008 Lian C, Xing HG, Chang YC, Fichtenbaum N. Electrical transport properties of wafer-fused p-GaAs/n-GaN heterojunctions Applied Physics Letters. 93. DOI: 10.1063/1.2983648  0.561
2008 Keller S, Suh CS, Chen Z, Chu R, Rajan S, Fichtenbaum NA, Furukawa M, DenBaars SP, Speck JS, Mishra UK. Properties of N-polar AlGaN/GaN heterostructures and field effect transistors grown by metalorganic chemical vapor deposition Journal of Applied Physics. 103. DOI: 10.1063/1.2838214  0.741
2008 Fichtenbaum NA, Mates TE, Keller S, DenBaars SP, Mishra UK. Impurity incorporation in heteroepitaxial N-face and Ga-face GaN films grown by metalorganic chemical vapor deposition Journal of Crystal Growth. 310: 1124-1131. DOI: 10.1016/J.Jcrysgro.2007.12.051  0.367
2008 Chen Z, Fichtenbaum N, Brown D, Keller S, Mishra UK, Denbaars SP, Nakamura S. Influence of Mg doping on the morphological, optical, and structural properties of InGaN/GaN multiple quantum wells Journal of Electronic Materials. 37: 546-549. DOI: 10.1007/s11664-007-0332-0  0.306
2008 Umana-Membreno GA, Parish G, Fichtenbaum N, Keller S, Mishra UK, Nener BD. Electrically active defects in GaN layers grown with and without Fe-doped buffers by metal-organic chemical vapor deposition Journal of Electronic Materials. 37: 569-572. DOI: 10.1007/S11664-007-0313-3  0.551
2008 Lian C, Xing HG, Chang YC, Fichtenbaum N. The role of doping type in setback layers on wafer-fused AlGaAs/GaAs/GaN HBTs Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 2960-2962. DOI: 10.1002/Pssc.200779307  0.539
2008 Schaake CA, Fichtenbaum NA, Neufeld CJ, Keller S, Denbaars SP, Speck JS, Mishra UK. M-plane InGaN/GaN light emitting diodes fabricated by MOCVD regrowth on c-plane patterned templates Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 2963-2965. DOI: 10.1002/Pssc.200779284  0.798
2008 Cuerdo R, Pei Y, Recht F, Fichtenbaum N, Keller S, Denbaars SP, Calle F, Mishra UK. Temperature-dependent high-frequency performance of deep submicron AlGaN/GaN HEMTs Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 2994-2997. DOI: 10.1002/Pssc.200779240  0.765
2008 Kocan M, Umana-Membreno GA, Recht F, Baharin A, Fichtenbaum NA, McCarthy L, Keller S, Menozzi R, Mishra UK, Parish G, Nener BD. GaN vertical n-p junctions prepared by Si ion implantation Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 1938-1940. DOI: 10.1002/Pssc.200778496  0.779
2007 Pei Y, Shen L, Palacios T, Fichtenbaum NA, McCarthy LS, Keller S, DenBaars SP, Mishra UK. Study of the n+ GaN cap in AlGaN/GaN high electron mobility transistors with reduced source-drain resistance Japanese Journal of Applied Physics, Part 2: Letters. 46: L842-L844. DOI: 10.1143/Jjap.46.L842  0.813
2007 Fichtenbaum NA, Neufeld CJ, Schaake C, Wu Y, Wong MH, Grundmann M, Keller S, DenBaars SP, Speck JS, Mishra UK. Metalorganic chemical vapor deposition regrowth of InGaN and GaN on N-polar pillar and stripe nanostructures Japanese Journal of Applied Physics, Part 2: Letters. 46: L230-L233. DOI: 10.1143/Jjap.46.L230  0.79
2007 Pei Y, Chu R, Fichtenbaum NA, Chen Z, Brown D, Shen L, Keller S, DenBaars SP, Mishra UK. Recessed slant gate AlGaN/GaN high electron mobility transistors with 20.9 W/mm at 10 GHz Japanese Journal of Applied Physics, Part 2: Letters. 46: L1087-L1089. DOI: 10.1143/Jjap.46.L1087  0.801
2007 Shen L, Pei Y, McCarthy L, Poblenz C, Corrion A, Fichtenbaum N, Keller S, Denbaars SP, Speck JS, Mishra UK. Deep-recessed GaN HEMTs using selective etch technology exhibiting high microwave performance without surface passivation Ieee Mtt-S International Microwave Symposium Digest. 623-626. DOI: 10.1109/MWSYM.2007.379978  0.782
2007 Chu R, Shu CS, Wong MH, Fichtenbaum N, Brown D, McCarthy L, Keller S, Feng W, Speck JS, Mishra UK. Impact of CF4 plasma treatment on GaN Ieee Electron Device Letters. 28: 781-783. DOI: 10.1109/Led.2007.902849  0.73
2007 Keller S, Fichtenbaum NA, Wu F, Brown D, Rosales A, Denbaars SP, Speck JS, Mishra UK. Influence of the substrate misorientation on the properties of N-polar GaN films grown by metal organic chemical vapor deposition Journal of Applied Physics. 102. DOI: 10.1063/1.2801406  0.324
2007 Fichtenbaum NA, Schaake C, Mates TE, Cobb C, Keller S, Denbaars SP, Mishra UK. Electrical characterization of p -type N-polar and Ga-polar GaN grown by metalorganic chemical vapor deposition Applied Physics Letters. 91. DOI: 10.1063/1.2800304  0.817
2007 Keller S, Fichtenbaum NA, Furukawa M, Speck JS, Denbaars SP, Mishra UK. Growth and characterization of N-polar InGaNGaN multiquantum wells Applied Physics Letters. 90. DOI: 10.1063/1.2738381  0.383
2007 Pei Y, Recht F, Fichtenbaum N, Keller S, Denbaars SP, Mishra UK. Deep submicron AlGaN/GaN HEMTs with ion implanted source/drain regions and non-alloyed ohmic contacts Electronics Letters. 43: 1466-1467. DOI: 10.1049/El:20072969  0.792
2007 Neufeld CJ, Schaake C, Grundmann M, Fichtenbaum NA, Keller S, Mishra UK. InGaN/GaN nanopillar-array light emitting diodes Physica Status Solidi (C) Current Topics in Solid State Physics. 4: 1605-1608. DOI: 10.1002/Pssc.200674292  0.803
2007 Fichtenbaum NA, Neufeld CJ, Schaake C, Wu Y, Wong MH, Grundmann M, Keller S, DenBaars SP, Speck JS, Mishra UK. MOCVD regrowth of InGaN on N-polar and Ga-polar pillar and stripe nanostructures Physica Status Solidi (B) Basic Research. 244: 1802-1805. DOI: 10.1002/Pssb.200674753  0.783
2007 Keller S, Fichtenbaum NA, Schaake C, Neufeld CJ, David A, Matioli E, Wu Y, DenBaars SP, Speck JS, Weisbuch C, Mishra UK. Optical properties of GaN nanopillar and nanostripe arrays with embedded InGaN/GaN multi quantum wells Physica Status Solidi (B) Basic Research. 244: 1797-1801. DOI: 10.1002/Pssb.200674752  0.785
2006 Keller S, Fichtenbaum N, Wu F, Lee G, Denbaars SP, Speck JS, Mishra UK. Effect of the nucleation conditions on the polarity of AlN and GaN films grown on C-face 6H-SiC Japanese Journal of Applied Physics, Part 2: Letters. 45: L322-L325. DOI: 10.1143/Jjap.45.L322  0.462
2006 Shen L, Palacios T, Poblenz C, Corrion A, Chakraborty A, Fichtenbaum N, Keller S, Denbaars SP, Speck JS, Mishra UK. Unpassivated high power deeply recessed GaN HEMTs with fluorine-plasma surface treatment Ieee Electron Device Letters. 27: 214-216. DOI: 10.1109/Led.2006.871887  0.715
2006 Suh CS, Dora Y, Fichtenbaum N, McCarthy L, Keller S, Mishra UK. High-breakdown enhancement-mode AlGaN/GaN HEMTs with integrated slant field-plate Technical Digest - International Electron Devices Meeting, Iedm. DOI: 10.1109/IEDM.2006.346931  0.771
2006 Keller S, Schaake C, Fichtenbaum NA, Neufeld CJ, Wu Y, McGroddy K, David A, Denbaars SP, Weisbuch C, Speck JS, Mishra UK. Optical and structural properties of GaN nanopillar and nanostripe arrays with embedded InGaN/GaN multi-quantum wells Journal of Applied Physics. 100. DOI: 10.1063/1.2234812  0.79
2006 Shen L, Chakraborty A, McCarthy L, Fichtenbaum N, Keller S, Denbaars SP, Mishra UK. High performance deeply-recessed GaN power HEMTs without surface passivation Electronics Letters. 42: 555-556. DOI: 10.1049/El:20064262  0.804
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