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Michael Grundmann, Ph.D. - Publications

Affiliations: 
2007 University of California, Santa Barbara, Santa Barbara, CA, United States 
Area:
Electronics & Photonics
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10 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2016 Yang C, Kneiß M, Schein FL, Lorenz M, Grundmann M. Room-temperature Domain-epitaxy of Copper Iodide Thin Films for Transparent CuI/ZnO Heterojunctions with High Rectification Ratios Larger than 10(9). Scientific Reports. 6: 21937. PMID 26916497 DOI: 10.1038/srep21937  0.333
2016 Grundmann M, Zúñiga-Pérez J. Pseudomorphic ZnO-based heterostructures: From polar through all semipolar to nonpolar orientations Physica Status Solidi (B) Basic Research. 253: 351-360. DOI: 10.1002/pssb.201552535  0.371
2016 Karsthof R, Räcke P, Von Wenckstern H, Grundmann M. Semi-transparent NiO/ZnO UV photovoltaic cells Physica Status Solidi (a) Applications and Materials Science. 213: 30-37. DOI: 10.1002/pssa.201532625  0.318
2014 Schein FL, Winter M, Böntgen T, Von Wenckstern H, Grundmann M. Highly rectifying p-ZnCo2O4/n-ZnO heterojunction diodes Applied Physics Letters. 104. DOI: 10.1063/1.4861648  0.351
2013 Zippel J, Lorenz M, Lange M, Stölzel M, Benndorf G, Grundmann M. Growth control of nonpolar and polar ZnO/MgxZn1-xO quantum wells by pulsed-laser deposition Journal of Crystal Growth. 364: 81-87. DOI: 10.1016/j.jcrysgro.2012.11.053  0.447
2013 Grundmann M, Schein FL, Lorenz M, Böntgen T, Lenzner J, Von Wenckstern H. Cuprous iodide - A p-type transparent semiconductor: History and novel applications Physica Status Solidi (a) Applications and Materials Science. 210: 1671-1703. DOI: 10.1002/pssa.201329349  0.33
2012 Cich MJ, Aldaz RI, Chakraborty A, David A, Grundmann MJ, Tyagi A, Zhang M, Steranka FM, Krames MR. Bulk GaN based violet light-emitting diodes with high efficiency at very high current density Applied Physics Letters. 101. DOI: 10.1063/1.4769228  0.536
2007 Fichtenbaum NA, Neufeld CJ, Schaake C, Wu Y, Wong MH, Grundmann M, Keller S, DenBaars SP, Speck JS, Mishra UK. Metalorganic chemical vapor deposition regrowth of InGaN and GaN on N-polar pillar and stripe nanostructures Japanese Journal of Applied Physics, Part 2: Letters. 46: L230-L233. DOI: 10.1143/Jjap.46.L230  0.623
2007 Neufeld CJ, Schaake C, Grundmann M, Fichtenbaum NA, Keller S, Mishra UK. InGaN/GaN nanopillar-array light emitting diodes Physica Status Solidi (C) Current Topics in Solid State Physics. 4: 1605-1608. DOI: 10.1002/Pssc.200674292  0.584
2007 Fichtenbaum NA, Neufeld CJ, Schaake C, Wu Y, Wong MH, Grundmann M, Keller S, DenBaars SP, Speck JS, Mishra UK. MOCVD regrowth of InGaN on N-polar and Ga-polar pillar and stripe nanostructures Physica Status Solidi (B) Basic Research. 244: 1802-1805. DOI: 10.1002/Pssb.200674753  0.615
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