Michael J. Cich, Ph.D. - Publications

Affiliations: 
2002 University of California, Berkeley, Berkeley, CA, United States 
Area:
Materials Science Engineering

22 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2015 Hurni CA, David A, Cich MJ, Aldaz RI, Ellis B, Huang K, Tyagi A, Delille RA, Craven MD, Steranka FM, Krames MR. Bulk GaN flip-chip violet light-emitting diodes with optimized efficiency for high-power operation Applied Physics Letters. 106. DOI: 10.1063/1.4905873  0.346
2013 Klem JF, Kim JK, Cich MJ, Hawkins SD, Leonhardt D, Fortune TR, Coon WT. Epitaxially passivated mesa-isolated InGaAs photodetectors Proceedings of Spie. 8704: 870402. DOI: 10.1117/12.2016558  0.357
2013 Dyer GC, Nordquist CD, Cich MJ, Ribaudo T, Grine AD, Fuller CT, Reno JL, Wanke MC. Position and mode dependent coupling of terahertz quantum cascade laser fields to an integrated diode Applied Physics Letters. 103. DOI: 10.1063/1.4825214  0.307
2013 Pan W, Klem JF, Kim JK, Thalakulam M, Cich MJ, Lyo SK. Chaotic quantum transport near the charge neutrality point in inverted type-II InAs/GaSb field-effect transistors Applied Physics Letters. 102. DOI: 10.1063/1.4789555  0.365
2012 Cich MJ, Aldaz RI, Chakraborty A, David A, Grundmann MJ, Tyagi A, Zhang M, Steranka FM, Krames MR. Bulk GaN based violet light-emitting diodes with high efficiency at very high current density Applied Physics Letters. 101. DOI: 10.1063/1.4769228  0.352
2011 Wanke MC, Lee M, Norquist CD, Cich MJ, Grine AD, Fuller CT, Reno JL. Monolithically integrated THz transceivers Proceedings of Spie - the International Society For Optical Engineering. 7953. DOI: 10.1117/12.876800  0.313
2011 Wanke MC, Lee M, Nordquist CD, Cich MJ, Grine AD, Fuller CT, Reno JL. Monolithically integrated solid-state terahertz transceivers Optics Infobase Conference Papers. DOI: 10.1038/Nphoton.2010.137  0.305
2010 Zutavern FJ, Glover SF, Swalby ME, Cich MJ, Mar A, Loubriel GM, Roose LD, White FE. DC-charged GaAs PCSSs for trigger generators and other high-voltage applications Ieee Transactions On Plasma Science. 38: 2708-2715. DOI: 10.1109/Tps.2010.2049663  0.353
2010 Peralta XG, Brener I, Padilla WJ, Young EW, Hoffman AJ, Cich MJ, Averitt RD, Wanke MC, Wright JB, Chen HT, O'Hara JF, Taylor AJ, Waldman J, Goodhue WD, Li J, et al. External modulators for TeraHertz Quantum Cascade Lasers based on electrically-driven active metamaterials Metamaterials. 4: 83-88. DOI: 10.1016/J.Metmat.2010.04.005  0.38
2009 Klem JF, Kim JK, Cich MJ, Keeler GA, Hawkins SD, Fortune TR. Mesa-isolated InGaAs photodetectors with low dark current Applied Physics Letters. 95. DOI: 10.1063/1.3184807  0.317
2009 Chan WL, Chen HT, Taylor AJ, Brener I, Cich MJ, Mittleman DM. A spatial light modulator for terahertz beams Applied Physics Letters. 94. DOI: 10.1063/1.3147221  0.308
2009 Chen HT, Padilla WJ, Cich MJ, Azad AK, Averitt RD, Taylor AJ. A metamaterial solid-state terahertz phase modulator Nature Photonics. 3: 148-151. DOI: 10.1038/Nphoton.2009.3  0.304
2003 Shapiro NA, Feick H, Hong W, Cich M, Armitage R, Weber ER. Luminescence energy and carrier lifetime in InGaN/GaN quantum wells as a function of applied biaxial strain Journal of Applied Physics. 94: 4520-4529. DOI: 10.1063/1.1607521  0.65
2003 Tzeng SY, Cich MJ, Zhao R, Feick H, Weber ER. Generation-recombination low-frequency noise signatures in GaAs metal-semiconductor field-effect transistors on laterally oxidized AlAs Applied Physics Letters. 82: 1063-1065. DOI: 10.1063/1.1555710  0.602
2002 Zhao RA, Cich MJ, Specht P, Weber ER. In situ diffuse reflectance spectroscopy investigation of low-temperature-grown GaAs Applied Physics Letters. 80: 2060-2062. DOI: 10.1063/1.1463215  0.616
2002 Cich MJ, Zhao R, Anderson EH, Weber ER. Influence of gas transport on the oxidation rate of aluminum arsenide Journal of Applied Physics. 91: 121-124. DOI: 10.1063/1.1421037  0.438
2001 Specht P, Cich MJ, Zhao R, Gebauer J, Luysberg M, Weber ER. Incorporation and thermal stability of defects in highly p-conductive non-stoichiometric GaAs: Be Physica B: Condensed Matter. 308: 808-811. DOI: 10.1016/S0921-4526(01)00809-2  0.605
2001 Park Y, Cich MJ, Zhao R, Specht P, Feick H, Weber ER. AFM study of lattice matched and strained InGaAsN layers on GaAs Physica B: Condensed Matter. 308: 98-101. DOI: 10.1016/S0921-4526(01)00669-X  0.61
2000 Park Y, Cich MJ, Zhao R, Specht P, Weber ER, Stach E, Nozaki S. Analysis of twin defects in GaAs(111)B molecular beam epitaxy growth Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 18: 1566-1571. DOI: 10.1116/1.591427  0.641
2000 Specht P, Cich MJ, Zhao R, Jäger ND, Gebauer J, Börner F, Krause-Rehberg R, Luysberg M, Weber ER. Defect engineering in MBE grown GaAs based materials Ieee Semiconducting and Semi-Insulating Materials Conference, Simc. 2000: 73-76. DOI: 10.1109/SIM.2000.939200  0.463
2000 Armitage R, Cich M, Rubin M, Weber ER. A method to pattern Pd over-layers on GdMg films and its application to increase the transmittance of metal hydride optical switches Applied Physics A. 71: 647-650. DOI: 10.1007/S003390000582  0.648
1999 Cich MJ, Zhao R, Park Y, Specht P, Weber ER. ELectrical Characterization of Beryllium Doped Low Temperature MBE Grown GaAs Mrs Proceedings. 570: 129. DOI: 10.1557/Proc-570-129  0.626
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