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James R. Guthrie, Ph.D. - Publications

Affiliations: 
2000 University of California, Santa Barbara, Santa Barbara, CA, United States 
Area:
Electronics & Photonics
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35 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2001 Rodwell MJW, Urteaga M, Mathew T, Scott D, Mensa D, Lee Q, Guthrie J, Betser Y, Martin SC, Smith RP, Jaganathan S, Krishnan S, Long SI, Pullela R, Agarwal B, et al. Submicron scaling of HBTs Ieee Transactions On Electron Devices. 48: 2606-2624. DOI: 10.1109/16.960387  0.762
2000 Krishnan S, Mensa D, Guthrie J, Jaganathan S, Mathew T, Girish R, Wei Y, Rodwell MJW. Broadband lumped HBT amplifiers Electronics Letters. 36: 466-467. DOI: 10.1049/El:20000355  0.757
2000 Guthrie JR, Urteaga M, Scott D, Mensa D, Mathew T, Lee Q, Krishnan S, Jaganathan S, Betser Y, Rodwell MJW. HBT MMIC 75 GHz and 78 GHz power amplifiers Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 246-249.  0.705
1999 Lee Q, Mensa D, Guthrie J, Jaganathan S, Mathew T, Betser Y, Krishnan S, Ceran S, Rodwell MJW. 66 GHz static frequency divider in transferred-substrate HBT technology Ieee Radio Frequency Integrated Circuits Symposium, Rfic, Digest of Technical Papers. 87-90. DOI: 10.1109/RFIC.1998.682054  0.714
1999 Lee Q, Martin SC, Mensa D, Smith RP, Guthrie J, Rodwell MJW. Submicron transferred-substrate heterojunction bipolar transistors Ieee Electron Device Letters. 20: 396-398. DOI: 10.1109/55.778155  0.617
1999 Mensa D, Pullela R, Lee Q, Guthrie J, Martin SC, Smith RP, Jaganathan S, Mathew T, Agarwal B, Long SI, Rodwell M. 48-GHz Digital IC's and 85-GHz Baseband Amplifiers Using Transferred-Substrate HBT's Ieee Journal of Solid-State Circuits. 34: 1196-1203. DOI: 10.1109/4.782076  0.798
1999 Mensa D, Lee Q, Guthrie J, Jaganathan S, Rodwell MJW. Transferred-substrate HBTs with 254 GHz fτ Electronics Letters. 35: 605-606. DOI: 10.1049/el:19990398  0.747
1999 Guthrie JR, Mensa D, Mathew T, Lee Q, Krishnan S, Jaganathan S, Ceran S, Betser Y, Rodwell MJW. 50 mm copper/polymer substrate HBT IC technology for >100 GHz MMICs Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 427-430.  0.734
1999 Rodwell M, Lee Q, Mensa D, Guthrie J, Martin SC, Smith RP, Pullela R, Agarwal B, Jaganathan S, Mathew T, Long S. Transferred-substrate HBT integrated circuits Solid-State Electronics. 43: 1489-1495.  0.796
1999 Lee Q, Martin SC, Mensa D, Smith RP, Guthrie J, Jaganathan S, Mathew T, Krishnan S, Ceran S, Rodwell MJW. Submicron transferred-substrate heterojunction bipolar transistors with greater than 800 GHz fmax Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 175-178.  0.784
1999 Rodwell M, Lee Q, Mensa D, Guthrie J, Betser Y, Martin SC, Smith RP, Jaganathan S, Mathew T, Krishnan P, Serhan C, Long S. Ultra high frequency integrated circuits using transferred substrate heterojunction bipolar transistors Proceedings - Ieee International Symposium On Circuits and Systems. 2: II-500 - II-503.  0.804
1999 Rodwell M, Lee Q, Mensa D, Guthrie J, Betser Y, Martin SC, Smith RP, Jaganathan S, Mathew T, Krishnan P, Serhan C, Long S. Transferred-substrate heterojunction bipolar transistor integrated circuit technology Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 169-174.  0.765
1998 AGARWAL B, PULLELA R, BHATTACHARYA U, MENSA D, LEE Q, SAMOSKA L, GUTHRIE J, RODWELL M. ULTRAHIGH fmax AlInAs/GaInAs TRANSFERRED-SUBSTRATE HETEROJUNCTION BIPOLAR TRANSISTORS FOR INTEGRATED CIRCUITS APPLICATIONS International Journal of High Speed Electronics and Systems. 9: 643-670. DOI: 10.1142/S0129156498000270  0.738
1998 Wohigemuth O, Agarwal B, Pullela R, Mensa D, Lee Q, Guthrie J, Rodwell MJW, Reuter R, Braunstein J, Schlechtweg M, Krems T, Kohler K. A NLTL-based integrated circuit for a 70-200 ghz vna system 1998 28th European Microwave Conference, Eumc 1998. 1: 104-107. DOI: 10.1109/EUMA.1998.338100  0.392
1998 Agarwal B, Lee Q, Pullela R, Mensa D, Guthrie J, Rodwell MJW. A Transferred-Substrate HBT Wide-Band Differential Amplifier to 50 GHz Ieee Microwave and Guided Wave Letters. 8: 263-265. DOI: 10.1109/75.701387  0.558
1998 Lee Q, Agarwal B, Mensa D, Pullela R, Guthrie J, Samoska L, Rodwell MJW. A > 400 GHz fmax transferred-substrate heterojunction bipolar transistor IC technology Ieee Electron Device Letters. 19: 77-79. DOI: 10.1109/55.661170  0.622
1998 Agarwal B, Lee Q, Mensa D, Pullela R, Guthrie J, Rodwell MJW. 80-GHz distributed amplifiers with transferred-substrate heterojunction bipolar transistors Ieee Transactions On Microwave Theory and Techniques. 46: 2302-2307. DOI: 10.1109/22.739215  0.626
1998 Agarwal B, Pullela R, Lee Q, Mensa D, Guthrie J, Rodwell MJW. 80 GHz distributed amplifiers with transferred-substrate heterojunction bipolar transistors Ieee Mtt-S International Microwave Symposium Digest. 2: 529-532.  0.641
1998 Pullela R, Mensa D, Agarwal B, Lee Q, Guthrie J, Rodwell MJW. 48 GHz static frequency divider in ultrafast transferred-substrate heterojunction bipolar transistor technology Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 68-71.  0.608
1998 Pullela R, Agarwal B, Lee Q, Mensa D, Guthrie J, Samoska L, Rodwell M. Ultrafast transferred-substrate heterojunction bi-polar transistor ICs for high-speed fiber-optic transmission Conference On Optical Fiber Communication, Technical Digest Series. 314-315.  0.558
1998 Guthrie J, Mensa D, Agarwal B, Lee Q, Pullela R, Rodwell MJW. HBT IC process with copper substrate Electronics Letters. 34: 467-468.  0.406
1998 Agarwal B, Lee Q, Mensa D, Pullela R, Guthrie J, Rodwell MJW. Broadband feedback amplifiers with AlInAs/ GaInAs transferred-substrate HBT Electronics Letters. 34: 1357-1358.  0.66
1998 Pullela R, Mensa D, Lee Q, Agarwal B, Guthrie J, Jagannathan S, Rodwell MJW. 48GHz static frequency dividers in transferred-substrate HBT technology Electronics Letters. 34: 1580-1581.  0.588
1998 Mensa D, Lee Q, Guthrie J, Jaganathan S, Rodwell MJW. Baseband amplifiers in transferred-substrate HBT technology Technical Digest - Gaas Ic Symposium (Gallium Arsenide Integrated Circuit). 33-36.  0.723
1998 Wohlgemuth O, Agarwal B, Pullela R, Mensa D, Lee Q, Guthrie J, Rodwell MJW, Reuter R, Braunstein J, Schlechtweg M, Krems T, Kohler K. NLTL-based integrated circuit for a 70-200 GHz VNA system Microwave Engineering Europe. 35-41.  0.383
1998 Lee Q, Martin SC, Mensa D, Pullela R, Smith RP, Agarwal B, Guthrie J, Rodwell M. Deep submicron transferred-substrate heterojunction bipolar transistors Annual Device Research Conference Digest. 26-27.  0.6
1998 Rodwell M, Lee Q, Mensa D, Pullela R, Guthrie J, Martin SC, Smith RP, Jaganathan S, Mathew T, Agarwal B, Long S. 48 GHz digital ICs using transferred-substrate HBTs Technical Digest - Gaas Ic Symposium (Gallium Arsenide Integrated Circuit). 113-116.  0.789
1998 Mensa D, Lee Q, Guthrie J, Jaganathan S, Rodwell MJW. Transferred-substrate HBTs with 250 GHz current-gain cutoff frequency Technical Digest - International Electron Devices Meeting. 657-660.  0.715
1997 Agarwal B, Mensa D, Pullela R, Lee Q, Bhattacharya U, Samoska L, Guthrie J, Rodwell MJW. A 277-GHz fmax transferred-substrate heterojunction bipolar transistor Ieee Electron Device Letters. 18: 228-231. DOI: 10.1109/55.568774  0.609
1997 Agarwal B, Mensa D, Lee Q, Pullela R, Guthrie J, Samoska L, Rodwell MJW. 50 GHz feedback amplifier with AlInAs/GaInAs transferred-substrate HBT Technical Digest - International Electron Devices Meeting, Iedm. 743-746.  0.629
1997 Agarwal B, Mensa D, Pullela R, Lee Q, Bhattacharya U, Samoska L, Guthrie J, Rodwell MJW. 277 GHz fmax transferred-substrate heterojunction bipolar transistor Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 633-636.  0.637
1997 Pullela R, Lee Q, Agarwal B, Mensa D, Guthrie J, Samoska L, Rodwell M. A>400 GHz fmax transferred-substrate HBT integrated circuit technology Annual Device Research Conference Digest. 68-69.  0.617
1996 Bhattacharya U, Samoska L, Pullela R, Guthrie J, Lee Q, Agarwal B, Mensa D, Rodwell MJW. 170GHz transferred-substrate heterojunction bipolar transistor Electronics Letters. 32: 1405-1406.  0.611
1996 Bhattacharya U, Mondry MJ, Hurtz G, Guthrie J, Rodwell MJW, Liu T, Nguyen C, Rensch D. 100 GHz transferred-substrate Schottky-collector heterojunction bipolar transistor Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 145-148.  0.626
1995 Bhattacharya U, Mondry MJ, Hurtz G, Pullela R, Reddy M, Guthrie J, Rodwell MJW, Bowers JE, Tan IH. Transferred Substrate Schottky-Collector Heterojunction Bipolar Transistors: First Results and Scaling Laws for High f max Ieee Electron Device Letters. 16: 357-359. DOI: 10.1109/55.400737  0.438
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