☰

Hameed A. Naseem

Affiliations: 
University of Arkansas, Fayetteville, Fayetteville, AR, United States 
Area:
Electronics and Electrical Engineering, System Science Engineering
Website:
https://engineering.uark.edu/directory/index/uid/hanaseem/name/Hameed+A.+Naseem/
Google:
"Hameed Naseem"
Bio:

https://www.muslimscientists.org/hameed-naseem
DOI: 10.1016/0040-6090(85)90093-8

Tree Publications Similar researchers PubMed Report error

Parents

Sign in to add mentor
Larry C. Burton grad student 1983 Virginia Tech (Physics Tree)
 (Fabrication and modeling of the CdS/ZnSiAs2 heterojunction)

Children

Sign in to add trainee
Mosleh H. Alotaibi grad student 2002 University of Arkansas
Marwan A. Albarghouti grad student 2004 University of Arkansas
Maruf Hossain grad student 2004 University of Arkansas
Khalil H. Sharif grad student 2005 University of Arkansas

Collaborators

Sign in to add collaborator
BETA: Related publications

Publications

You can help our author matching system! If you notice any publications incorrectly attributed to this author, please sign in and mark matches as correct or incorrect.

Banihashemian SF, Grant JM, Sabbar A, et al. (2020) Growth and characterization of low-temperature Si 1-x Sn x on Si using plasma enhanced chemical vapor deposition Optical Materials Express. 10: 2242-2253
Abu-Safe HH, Al-Esseili R, Sarollahi M, et al. (2020) Thermally-induced nonlinear optical properties of silver nano-films near surface plasmon resonance Optical Materials. 105: 109858
Sabbar A, Grant JM, Grant PC, et al. (2020) Growth and Characterization of SiGe on c-Plane Sapphire Using a Chemical Vapor Deposition System Journal of Electronic Materials. 49: 4809-4815
Abu‐Safe HH, Al‐Esseili R, El‐Nasser H, et al. (2020) Au–Ag–Al Nano‐Alloy Thin Films as an Advanced Material for Photonic Applications: XPS Analysis, Linear and Nonlinear Optical Properties Under CW Regime Crystal Research and Technology. 55: 1900228
Grant PC, Dou W, Alharthi B, et al. (2019) UHV-CVD growth of high quality GeSn using SnCl4: from material growth development to prototype devices Optical Materials Express. 9: 3277-3291
Alharthi B, Dou W, Grant PC, et al. (2019) Low temperature epitaxy of high-quality Ge buffer using plasma enhancement via UHV-CVD system for photonic device applications Applied Surface Science. 481: 246-254
Dou W, Alharthi B, Grant PC, et al. (2018) Crystalline GeSn growth by plasma enhanced chemical vapor deposition Optical Materials Express. 8: 3220-3229
Alharthi B, Grant JM, Dou W, et al. (2018) Heteroepitaxial Growth of Germanium-on-Silicon Using Ultrahigh-Vacuum Chemical Vapor Deposition with RF Plasma Enhancement Journal of Electronic Materials. 47: 4561-4570
Alahmad H, Mosleh A, Alher M, et al. (2018) GePb Alloy Growth Using Layer Inversion Method Journal of Electronic Materials. 47: 3733-3740
Ghetmiri SA, Zhou Y, Margetis J, et al. (2017) Study of a SiGeSn/GeSn/SiGeSn structure toward direct bandgap type-I quantum well for all group-IV optoelectronics. Optics Letters. 42: 387-390
See more...