| Year |
Citation |
Score |
| 2021 |
He T, Stolte M, Wang Y, Renner R, Ruden PP, Würthner F, Frisbie CD. Site-specific chemical doping reveals electron atmospheres at the surfaces of organic semiconductor crystals. Nature Materials. PMID 34462569 DOI: 10.1038/s41563-021-01079-z |
0.311 |
|
| 2018 |
He T, Wu Y, D'Avino G, Schmidt E, Stolte M, Cornil J, Beljonne D, Ruden PP, Würthner F, Frisbie CD. Crystal step edges can trap electrons on the surfaces of n-type organic semiconductors. Nature Communications. 9: 2141. PMID 29849022 DOI: 10.1038/S41467-018-04479-Z |
0.381 |
|
| 2018 |
Haratipour N, Liu Y, Wu RJ, Namgung S, Ruden PP, Mkhoyan KA, Oh S, Koester SJ. Mobility Anisotropy in Black Phosphorus MOSFETs With HfO2 Gate Dielectrics Ieee Transactions On Electron Devices. 65: 4093-4101. DOI: 10.1109/Ted.2018.2865440 |
0.399 |
|
| 2017 |
Liu Y, Ruden PP. Temperature-dependent anisotropic charge-carrier mobility limited by ionized impurity scattering in thin-layer black phosphorus Physical Review B. 95. DOI: 10.1103/Physrevb.95.165446 |
0.36 |
|
| 2017 |
Shi S, Xie Z, Liu F, Smith DL, Frisbie CD, Ruden PP. Theory of magnetoresistance of organic molecular tunnel junctions with nonmagnetic electrodes Physical Review B. 95. DOI: 10.1103/Physrevb.95.155315 |
0.4 |
|
| 2016 |
Xie Z, Shi S, Liu F, Smith DL, Ruden PP, Frisbie CD. Large Magnetoresistance at Room Temperature in Organic Molecular Tunnel Junctions With Non-Magnetic Electrodes. Acs Nano. PMID 27598057 DOI: 10.1021/Acsnano.6B03853 |
0.36 |
|
| 2016 |
Liu Y, Low T, Ruden PP. Mobility anisotropy in monolayer black phosphorus due to scattering by charged impurities Physical Review B - Condensed Matter and Materials Physics. 93. DOI: 10.1103/Physrevb.93.165402 |
0.406 |
|
| 2015 |
Nie W, Gupta G, Crone BK, Liu F, Smith DL, Ruden PP, Kuo CY, Tsai H, Wang HL, Li H, Tretiak S, Mohite AD. Interface Design Principles for High-Performance Organic Semiconductor Devices. Advanced Science (Weinheim, Baden-Wurttemberg, Germany). 2: 1500024. PMID 27980948 DOI: 10.1002/Advs.201500024 |
0.345 |
|
| 2015 |
Liu F, Liu Y, Smith DL, Ruden PP. Device Model for Graphene Spin Valves Ieee Transactions On Electron Devices. DOI: 10.1109/Ted.2015.2464793 |
0.34 |
|
| 2015 |
Shi S, Liu F, Smith DL, Ruden PP. Effects of disorder on spin injection and extraction for organic semiconductor spin-valves Journal of Applied Physics. 117. DOI: 10.1063/1.4913281 |
0.399 |
|
| 2015 |
Yin S, Nie W, Mohite AD, Saxena A, Smith DL, Ruden PP. Current-voltage characteristics of organic heterostructure devices with insulating spacer layers Organic Electronics: Physics, Materials, Applications. 24: 26-29. DOI: 10.1016/J.Orgel.2015.05.018 |
0.342 |
|
| 2015 |
Nie W, Gupta G, Crone BK, Liu F, Smith DL, Ruden PP, Kuo C, Tsai H, Wang H, Li H, Tretiak S, Mohite AD. Semiconductors: Interface Design Principles for High-Performance Organic Semiconductor Devices (Adv. Sci. 6/2015) Advanced Science. 2. DOI: 10.1002/Advs.201570021 |
0.344 |
|
| 2014 |
Xie W, Liu F, Shi S, Ruden PP, Frisbie CD. Charge density dependent two-channel conduction in organic electric double layer transistors (EDLTs). Advanced Materials (Deerfield Beach, Fla.). 26: 2527-32. PMID 24496822 DOI: 10.1002/Adma.201304946 |
0.377 |
|
| 2014 |
Liu F, Kelley MR, Crooker SA, Nie W, Mohite AD, Ruden PP, Smith DL. Magnetoelectroluminescence of organic heterostructures: Analytical theory and spectrally resolved measurements Physical Review B - Condensed Matter and Materials Physics. 90. DOI: 10.1103/Physrevb.90.235314 |
0.391 |
|
| 2014 |
Liu Y, Goswami A, Liu F, Smith DL, Ruden PP. Scattering in graphene associated with charged out-of-plane impurities Journal of Applied Physics. 116. DOI: 10.1063/1.4904193 |
0.321 |
|
| 2014 |
Crooker SA, Liu F, Kelley MR, Martinez NJD, Nie W, Mohite A, Nayyar IH, Tretiak S, Smith DL, Ruden PP. Spectrally resolved hyperfine interactions between polaron and nuclear spins in organic light emitting diodes: Magneto-electroluminescence studies Applied Physics Letters. 105. DOI: 10.1063/1.4898700 |
0.325 |
|
| 2013 |
Liu F, Crone BK, Ruden P, Smith DL. Improving the efficiency of organic photovoltaic devices through interface engineering Journal of the Marine Biological Association of the United Kingdom. 1537. DOI: 10.1557/Opl.2013.911 |
0.402 |
|
| 2013 |
Xie W, McGarry KA, Liu F, Wu Y, Ruden PP, Douglas CJ, Frisbie CD. High-mobility transistors based on single crystals of isotopically substituted rubrene- d 28 Journal of Physical Chemistry C. 117: 11522-11529. DOI: 10.1021/Jp402250V |
0.326 |
|
| 2012 |
Liu F, Ruden PP, Campbell IH, Smith DL. Modeling of exciplex recombination in organic bilayer structures Materials Research Society Symposium Proceedings. 1448: 19-24. DOI: 10.1557/Opl.2012.1492 |
0.398 |
|
| 2012 |
Liu F, Ruden PP, Campbell IH, Smith DL. Electrostatic capacitance in single and double layer organic diodes Applied Physics Letters. 101. DOI: 10.1063/1.4734379 |
0.366 |
|
| 2012 |
Goswami A, Yunus M, Ruden PP, Smith DL. Magneto-resistance of organic spin valves due to spin-polarized tunnel injection and extraction of charge carriers Journal of Applied Physics. 111. DOI: 10.1063/1.3681173 |
0.362 |
|
| 2012 |
Steinke IP, Ruden PP. Percolation model for the threshold voltage of field-effect transistors with nanocrystalline channels Journal of Applied Physics. 111. DOI: 10.1063/1.3676217 |
0.407 |
|
| 2011 |
Ruden P. Organic spintronics: Interfaces are critical. Nature Materials. 10: 8-9. PMID 21157491 DOI: 10.1038/Nmat2933 |
0.301 |
|
| 2010 |
Xia Y, Xie W, Ruden PP, Frisbie CD. Carrier localization on surfaces of organic semiconductors gated with electrolytes. Physical Review Letters. 105: 036802. PMID 20867788 DOI: 10.1103/Physrevlett.105.036802 |
0.388 |
|
| 2010 |
Chang HC, Ruden PP, Liang Y, Frisbie CD. Transient charge carrier transport effects in organic field effect transistor channels Materials Research Society Symposium Proceedings. 1270: 111-116. DOI: 10.1557/Proc-1270-Ii01-08 |
0.361 |
|
| 2010 |
Yunus M, Ruden PP, Smith DL. Spin-polarized charge carrier injection by tunneling from ferromagnetic contacts into organic semiconductors Applied Physics Letters. 97. DOI: 10.1063/1.3522657 |
0.345 |
|
| 2010 |
Chang HC, Ruden PP, Liang Y, Frisbie CD. Transient effects controlling the charge carrier population of organic field effect transistor channels Journal of Applied Physics. 107. DOI: 10.1063/1.3368662 |
0.381 |
|
| 2010 |
Yunus M, Ruden PP, Smith DL. Macroscopic modeling of spin injection and spin transport in organic semiconductors Synthetic Metals. 160: 204-209. DOI: 10.1016/J.Synthmet.2009.05.013 |
0.365 |
|
| 2009 |
Yunus M, Ruden PP, Smith DL. Spin Transport and Magneto-Resistance in Organic Semiconductors Mrs Proceedings. 1154: 107-112. DOI: 10.1557/Proc-1154-B10-10 |
0.353 |
|
| 2009 |
Liang Y, Frisbie CD, Chang HC, Ruden PP. Conducting channel formation and annihilation in organic field-effect structures Journal of Applied Physics. 105. DOI: 10.1063/1.3068189 |
0.35 |
|
| 2009 |
Xia Y, Cho JH, Lee J, Ruden PP, Frisbie CD. Comparison of the mobility-carrier density relation in polymer and single-crystal organic transistors employing vacuum and liquid gate dielectrics Advanced Materials. 21: 2174-2179. DOI: 10.1002/Adma.200803437 |
0.306 |
|
| 2008 |
Smith DL, Ruden PP. Spin-polarized tunneling through potential barriers at ferromagnetic metal/semiconductor Schottky contacts Physical Review B - Condensed Matter and Materials Physics. 78. DOI: 10.1103/Physrevb.78.125202 |
0.352 |
|
| 2008 |
Yunus M, Ruden PP, Smith DL. Spin injection effects on exciton formation in organic semiconductors Applied Physics Letters. 93. DOI: 10.1063/1.2988273 |
0.417 |
|
| 2008 |
Yunus M, Ruden PP, Smith DL. Ambipolar electrical spin injection and spin transport in organic semiconductors Journal of Applied Physics. 103. DOI: 10.1063/1.2917215 |
0.346 |
|
| 2008 |
Steinke IP, Ruden PP, Ni X, Morko̧ H, Son KA. Current versus voltage characteristics of GaNAlGaNGaN double heterostructures with varying AlGaN thickness and composition under hydrostatic pressure Journal of Applied Physics. 103. DOI: 10.1063/1.2844484 |
0.357 |
|
| 2008 |
Schroepfer DD, Ruden PP, Xia Y, Frisbie CD, Shaheen SE. Hydrostatic pressure effects on poly(3-hexylthiophene) thin film transistors Applied Physics Letters. 92. DOI: 10.1063/1.2830330 |
0.303 |
|
| 2007 |
Kauser MZ, Ruden PP. Effects of Chirality and Diameter on Electron Transport Properties in Individual Semiconducting Carbon Nanotubes Mrs Proceedings. 1017: 70-75. DOI: 10.1557/Proc-1017-Dd08-49 |
0.312 |
|
| 2007 |
Ruden PP, Smith DL. Device Model for Light-Emitting Field-Effect Transistors with Organic Semiconductor Channel Mrs Proceedings. 1003: 92-97. DOI: 10.1557/Proc-1003-O04-08 |
0.36 |
|
| 2007 |
Steinke I, Kauser MZ, Ruden PP, Ni X, Morkoc H, Son K. Hydrostatic Pressure Studies of GaN/AlGaN/GaN Heterostructure Devices with Varying AlGaN Thickness and Composition Mrs Proceedings. 994. DOI: 10.1557/Proc-0994-F11-19 |
0.378 |
|
| 2007 |
Kauser MZ, Ruden PP. Effects of chirality and diameter on the transport properties of semiconducting carbon nanotubes Journal of Applied Physics. 102. DOI: 10.1063/1.2767224 |
0.317 |
|
| 2007 |
Smith DL, Ruden PP. Device modeling of light-emitting ambipolar organic semiconductor field-effect transistors Journal of Applied Physics. 101. DOI: 10.1063/1.2715490 |
0.428 |
|
| 2006 |
Kauser MZ, Verma A, Ruden PP. Electron transport in semiconducting chiral carbon nanotubes Mrs Proceedings. 922: 76-81. DOI: 10.1557/Proc-0922-U07-50 |
0.371 |
|
| 2006 |
Smith DL, Ruden PP. Analytic device model for light-emitting ambipolar organic semiconductor field-effect transistors Applied Physics Letters. 89. DOI: 10.1063/1.2402942 |
0.392 |
|
| 2006 |
Kauser MZ, Ruden PP. Electron transport in semiconducting chiral carbon nanotubes Applied Physics Letters. 89. DOI: 10.1063/1.2362973 |
0.343 |
|
| 2006 |
Liu Y, Kauser MZ, Schroepfer DD, Ruden PP, Xie J, Moon YT, Onojima N, Morko̧ H, Son KA, Nathan MI. Effect of hydrostatic pressure on the current-voltage characteristics of GaN/AlGaN/GaN heterostructure devices Journal of Applied Physics. 99. DOI: 10.1063/1.2200742 |
0.357 |
|
| 2006 |
Liu Y, Kauser MZ, Ruden PP, Hassan Z, Lee YC, Ng SS, Yam FK. Effect of hydrostatic pressure on the barrier height of Ni Schottky contacts on n-AlGaN Applied Physics Letters. 88: 1-3. DOI: 10.1063/1.2164909 |
0.322 |
|
| 2006 |
Liu Y, Ruden PP, Xie J, Morkoç H, Son KA. Effect of hydrostatic pressure on the dc characteristics of AlGaN/GaN heterojunction field effect transistors Applied Physics Letters. 88. DOI: 10.1063/1.2161812 |
0.371 |
|
| 2006 |
Kauser MZ, Verma A, Ruden PP. Low- and high-field transport studies for semiconducting carbon nanotubes Physica E: Low-Dimensional Systems and Nanostructures. 34: 666-669. DOI: 10.1016/J.Physe.2006.03.055 |
0.378 |
|
| 2006 |
Hassan Z, Lee YC, Ng SS, Yam FK, Liu Y, Rang Z, Kauser MZ, Ruden PP, Nathan MI. AlGaN metal-semiconductor-metal structure for pressure sensing applications Physica Status Solidi (C) Current Topics in Solid State Physics. 3: 2287-2290. DOI: 10.1002/Pssc.200565155 |
0.313 |
|
| 2005 |
Ruden PP, Albrecht JD, Smith DL. Modeling of Spin Injection and Spin Transport Properties in Organic and Inorganic Semiconductors Mrs Proceedings. 871: 12-17. DOI: 10.1557/Proc-871-I1.6 |
0.365 |
|
| 2005 |
Verma A, Kauser MZ, Ruden PP. Effects of radial breathing mode phonons on charge transport in semiconducting zigzag carbon nanotubes Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2043244 |
0.372 |
|
| 2005 |
Verma A, Kauser MZ, Ruden PP. Ensemble Monte Carlo transport simulations for semiconducting carbon nanotubes Journal of Applied Physics. 97. DOI: 10.1063/1.1925763 |
0.38 |
|
| 2005 |
Rang Z, Nathan MI, Ruden PP, Podzorov V, Gershenson ME, Newman CR, Frisbie CD. Hydrostatic pressure dependence of charge carrier transport in single-crystal rubrene devices Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1875761 |
0.339 |
|
| 2005 |
Albrecht JD, Van Nostrand JE, Claflin B, Liu Y, Nathan MI, Ruden PP. Electrical and magnetic characteristics of MBE-grown GaMnN Journal of Superconductivity and Novel Magnetism. 18: 69-73. DOI: 10.1007/S10948-005-2152-X |
0.313 |
|
| 2004 |
Ruden PP, Smith DL. Model for Spin Injection into Conjugated Organic Semiconductors Mrs Proceedings. 825. DOI: 10.1557/Proc-825-G3.8 |
0.366 |
|
| 2004 |
Rang Z, Nathan MI, Ruden PP, Chesterfield R, Frisbie CD. Hydrostatic-pressure dependence of organic thin-film transistor current versus voltage characteristics Applied Physics Letters. 85: 5760-5762. DOI: 10.1063/1.1829388 |
0.342 |
|
| 2004 |
Ruden PP, Smith DL. Theory of spin injection into conjugated organic semiconductors Journal of Applied Physics. 95: 4898-4904. DOI: 10.1063/1.1689753 |
0.36 |
|
| 2004 |
Liu Y, Kauser MZ, Nathan MI, Ruden PP, Dogan S, Morkoç H, Park SS, Lee KY. Effects of hydrostatic and uniaxial stress on the Schottky barrier heights of Ga-polarity and N-polarity n-GaN Applied Physics Letters. 84: 2112-2114. DOI: 10.1063/1.1689392 |
0.32 |
|
| 2003 |
Li T, Ruden PP, Campbell IH, Smith DL. Investigation of bottom-contact organic field effect transistors by two-dimensional device modeling Journal of Applied Physics. 93: 4017-4022. DOI: 10.1063/1.1558998 |
0.39 |
|
| 2002 |
Li T, Ruden PP, Campbell IH, Smith DL. Two-dimensional modeling of organic field effect transistors Mrs Proceedings. 725. DOI: 10.1557/Proc-725-P10.2 |
0.315 |
|
| 2002 |
Sutandi A, Ruden PP, Brennan KF. Electronic structure of dynamically two-dimensional hole gas in AlGaN/GaN heterostructures Journal of Physics Condensed Matter. 14: 3435-3443. DOI: 10.1088/0953-8984/14/13/303 |
0.405 |
|
| 2002 |
Liu Y, Kauser MZ, Nathan MI, Ruden PP, Dabiran AM, Hertog B, Chow PP. Effects of hydrostatic and uniaxial stress on the conductivity of p-type GaN epitaxial layer Applied Physics Letters. 81: 3398-3400. DOI: 10.1063/1.1517713 |
0.359 |
|
| 2002 |
Albrecht JD, Ruden PP, Reinecke TL. Hole scattering near the valence band edge in wurtzite gallium nitride Journal of Applied Physics. 92: 3803-3814. DOI: 10.1063/1.1503392 |
0.353 |
|
| 2002 |
Li T, Balk JW, Ruden PP, Campbell IH, Smith DL. Channel formation in organic field-effect transistors Journal of Applied Physics. 91: 4312-4318. DOI: 10.1063/1.1453509 |
0.358 |
|
| 2002 |
Tirino L, Weber M, Brennan KF, Bellotti E, Goano M, Ruden PP. Journal of Computational Electronics. 1: 231-234. DOI: 10.1023/A:1020785710423 |
0.394 |
|
| 2001 |
Li T, Ruden PP, Campbell IH, Smith DL. Modeling of Channel Formation in Organic Field Effect Transistors Mrs Proceedings. 708: 237-242. DOI: 10.1557/Proc-708-Bb8.4 |
0.34 |
|
| 2001 |
Zhang Y, Ruden PP. Current Gain of an AlGaN/GaN Heterojunction Bipolar Transistor Mrs Proceedings. 680. DOI: 10.1557/Proc-680-E9.14 |
0.455 |
|
| 2001 |
Brennan KF, Bellotti E, Farahmand M, Nilsson H, Ruden PP, Zhang Y. Monte Carlo modeling of wurtzite and 4H phase semiconducting materials Vlsi Design. 13: 117-124. DOI: 10.1155/2001/48073 |
0.362 |
|
| 2001 |
Farahmand M, Garetto C, Bellotti E, Brennan KF, Goano M, Ghillino E, Ghione G, Albrecht JD, Ruden PP. Monte Carlo simulation of electron transport in the III-nitride wurtzite phase materials system: binaries and ternaries Ieee Transactions On Electron Devices. 48: 535-542. DOI: 10.1109/16.906448 |
0.408 |
|
| 2001 |
Farahmand M, Weber M, Tirino L, Brennan KF, Ruden PP. Theoretical study of direct-current and radio-frequency breakdown in GaN wurtzite- and zinc-blende-phase MESFETs (metal-semiconductor field-effect transistors) Journal of Physics Condensed Matter. 13: 10477-10486. DOI: 10.1088/0953-8984/13/46/316 |
0.364 |
|
| 2001 |
Liu Y, Rang ZL, Fung AK, Cai C, Ruden PP, Nathan MI, Shtrikman H. Uniaxial-stress dependence of Hall effect in an AlGaAs/GaAs modulation-doped heterojunction Applied Physics Letters. 79: 4586-4588. DOI: 10.1063/1.1427753 |
0.341 |
|
| 2000 |
Li T, Ruden PP, Albrecht JD, Ancona MG, Anholt R. Thermal Modeling of III-nitride Heterostructure Field Effect Transistors Mrs Proceedings. 622. DOI: 10.1557/Proc-622-T6.26.1 |
0.313 |
|
| 2000 |
Bellotti E, Farahmand M, Nilsson H-, Brennan KF, Ruden PP. Monte Carlo based calculation of transport parameters for wide band gap device simulation Mrs Proceedings. 622. DOI: 10.1557/Proc-622-T6.24.1 |
0.398 |
|
| 2000 |
Brennan KF, Bellotti E, Farahmand M, Nilsson H-, Ruden PP, Zhang Y. Monte Carlo simulation of noncubic symmetry semiconducting materials and devices Ieee Transactions On Electron Devices. 47: 1882-1890. DOI: 10.1109/16.870567 |
0.387 |
|
| 2000 |
Ruden PP, Bellotti E, Nilsson H, Brennan KF. Modeling of band-to-band tunneling transitions during drift in Monte Carlo transport simulations Journal of Applied Physics. 88: 1488-1493. DOI: 10.1063/1.373844 |
0.4 |
|
| 2000 |
Zhang Y, Cai C, Ruden PP. AlGaN/GaN heterojunction bipolar transistor structures-design considerations Journal of Applied Physics. 88: 1067-1072. DOI: 10.1063/1.373778 |
0.452 |
|
| 2000 |
Bellotti E, Nilsson H, Brennan KF, Ruden PP, Trew R. Monte Carlo calculation of hole initiated impact ionization in 4H phase SiC Journal of Applied Physics. 87: 3864-3871. DOI: 10.1063/1.372426 |
0.408 |
|
| 2000 |
Brennan KF, Bellotti E, Farahmand M, Haralson J, Ruden P, Albrecht JD, Sutandi A. Materials theory based modeling of wide band gap semiconductors: from basic properties to devices Solid-State Electronics. 44: 195-204. DOI: 10.1016/S0038-1101(99)00224-5 |
0.379 |
|
| 2000 |
Bellotti E, Nilsson HE, Brennan KF, Ruden PP, Trew R. Monte Carlo calculation of hole initiated impact ionization in 4H phase SiC Journal of Applied Physics. 87: 3864-3871. |
0.303 |
|
| 2000 |
Zhang Y, Cai C, Ruden PP. AlGaN/GaN heterojunction bipolar transistor structures-design considerations Journal of Applied Physics. 88: 1067-1072. |
0.349 |
|
| 2000 |
Albrecht JD, Ruden PP, Ancona MG. New materials-theory-based model for output characteristics of AlGaN/GaN heterostructure field effect transistors Materials Research Society Symposium - Proceedings. 595. |
0.309 |
|
| 2000 |
Ruden PP, Bellotti E, Nilsson HE, Brennan KF. Modeling of band-to-band tunneling transitions during drift in Monte Carlo transport simulations Journal of Applied Physics. 88: 1488-1493. |
0.303 |
|
| 1999 |
Kennedy TA, Glaser ER, Carlos WE, Ruden PP, Nakamura S. Symmetry of electrons and holes in lightly photo-excited InGaN LEDs Mrs Internet Journal of Nitride Semiconductor Research. 4: 793-798. DOI: 10.1557/S1092578300003434 |
0.347 |
|
| 1999 |
Bellotti E, Doshi B, Brennan KF, Ruden PP. Ensemble Monte Carlo Study of Electron Transport in Bulk Indium Nitride Mrs Internet Journal of Nitride Semiconductor Research. 4: 781-786. DOI: 10.1557/S1092578300003410 |
0.363 |
|
| 1999 |
Ruden PP, Albrecht JD, Sutandi A, Binari SC, Ikossi-Anastasiou K, Ancona MG, Henry RL, Koleske DD, Wickenden AE. Extrinsic performance limitations of AlGaN/GaN heterostructure field effect TRANSISTORS Mrs Internet Journal of Nitride Semiconductor Research. 4: 678-683. DOI: 10.1557/S1092578300003240 |
0.348 |
|
| 1999 |
Albrecht JD, Ruden PP, Ancona MG. New materials-theory-based model for output characteristics of AlGaN/GaN heterostructure field effect transistors Mrs Internet Journal of Nitride Semiconductor Research. 595: 640-646. DOI: 10.1557/Proc-595-F99W11.15 |
0.321 |
|
| 1999 |
Fung AK, Cai C, Ruden PP, Nathan MI, Chen MY, McDermott BT, Sullivan GJ, Hove JMV, Boutros K, Redwing J, Yange JW, Chene Q, Khane MA, Schaff W, Murphy M. Hydrostatic and uniaxial stress dependence and photo induced effects on the channel conductance of n-A1GaN/GaN heterostructures grown on sapphire substrates Mrs Proceedings. 572. DOI: 10.1557/Proc-572-495 |
0.335 |
|
| 1999 |
Albrecht JD, Ruden PP, Limpijumnong S, Lambrecht WRL, Brennan KF. High field electron transport properties of bulk ZnO Journal of Applied Physics. 86: 6864-6867. DOI: 10.1063/1.371764 |
0.436 |
|
| 1999 |
Bellotti E, Nilsson H, Brennan KF, Ruden PP. Ensemble Monte Carlo calculation of hole transport in bulk 3C–SiC Journal of Applied Physics. 85: 3211-3217. DOI: 10.1063/1.369689 |
0.415 |
|
| 1999 |
Bellotti E, Doshi BK, Brennan KF, Albrecht JD, Ruden PP. Ensemble Monte Carlo study of electron transport in wurtzite InN Journal of Applied Physics. 85: 916-923. DOI: 10.1063/1.369211 |
0.422 |
|
| 1999 |
Albrecht JD, Ruden PP, Limpijumnong S, Lambrecht WRL, Brennan KF. High field electron transport properties of bulk ZnO Journal of Applied Physics. 86: 6864-6867. |
0.34 |
|
| 1999 |
Bellotti E, Nilsson HE, Brennan KF, Ruden PP. Ensemble Monte Carlo calculation of hole transport in bulk 3C-SiC Journal of Applied Physics. 85: 3211-3217. |
0.304 |
|
| 1999 |
Bellotti E, Doshi B, Brennan KF, Ruden PP. Ensemble Monte Carlo study of electron transport in bulk indium nitride Mrs Internet Journal of Nitride Semiconductor Research. 4. |
0.327 |
|
| 1999 |
Bellotti E, Doshi BK, Brennan KF, Albrecht JD, Ruden PP. Ensemble Monte Carlo study of electron transport in wurtzite InN Journal of Applied Physics. 85: 916-923. |
0.313 |
|
| 1998 |
Krishnankutty S, Yang W, Nohava T, Ruden PP. Fabrication and Characterization of GaN/AlGaN Ultraviolet-Band Heterojunction Photodiodes Mrs Internet Journal of Nitride Semiconductor Research. 3. DOI: 10.1557/S109257830000079X |
0.333 |
|
| 1998 |
Kennedy TA, Glaser ER, Carlos WE, Ruden PP, Nakamura S. Symmetry of Electrons and Holes in Lightly Photo-Excited InGaN LEDs Mrs Proceedings. 537. DOI: 10.1557/Proc-537-G7.4 |
0.347 |
|
| 1998 |
Albrecht JD, Ruden PP, Bellotti E, Brennan KF. Monte Carlo Simulation of Hall Effect in n-Type GaN Mrs Proceedings. 537. DOI: 10.1557/Proc-537-G6.6 |
0.383 |
|
| 1998 |
Bellotti E, Doshi B, Brennan KF, Ruden PP. Ensemble Monte Carlo Study of Electron Transport in Bulk Indium Nitride Mrs Proceedings. 537. DOI: 10.1557/Proc-537-G6.59 |
0.363 |
|
| 1998 |
Ruden P, Albrecht J, Sutandi A, Binaril S, Ikossi-Anastasiou K, Ancona M, Henry R, Kolesket D, Wickendent A. Extrinsic Performance Limitations of AlGaN/GaN Heterostructure Field Effect Transistors Mrs Proceedings. 537. DOI: 10.1557/Proc-537-G6.35 |
0.358 |
|
| 1998 |
Fung AK, Albrecht JD, Nathan MI, Ruden PP, Shtrikman H. In-plane uniaxial stress effects of AlGaAs/GaAs modulation doped heterostructures characterized by the transmission line method Journal of Applied Physics. 84: 3741-3746. DOI: 10.1063/1.368552 |
0.3 |
|
| 1998 |
Albrecht JD, Wang RP, Ruden PP, Farahmand M, Brennan KF. Electron transport characteristics of GaN for high temperature device modeling Journal of Applied Physics. 83: 4777-4781. DOI: 10.1063/1.367269 |
0.456 |
|
| 1998 |
Bellotti E, Brennan KF, Wang R, Ruden PP. Monte Carlo study of electron initiated impact ionization in bulk zincblende and wurtzite phase ZnS Journal of Applied Physics. 83: 4765-4772. DOI: 10.1063/1.367267 |
0.401 |
|
| 1998 |
Albrecht JD, Wang RP, Ruden PP, Farahmand M, Brennan KF. Monte Carlo calculation of electron transport properties of bulk AlN Journal of Applied Physics. 83: 1446-1449. DOI: 10.1063/1.366848 |
0.445 |
|
| 1998 |
Glaser ER, Kennedy TA, Carlos WE, Ruden PP, Nakamura S. Recombination processes in InxGa1-xN light-emitting diodes studied through optically detected magnetic resonance Applied Physics Letters. 73: 3123-3125. DOI: 10.1063/1.122693 |
0.372 |
|
| 1998 |
Albrecht JD, Wang RP, Ruden PP, Farahmand M, Brennan KF. Electron transport characteristics of GaN for high temperature device modeling Journal of Applied Physics. 83: 4777-4781. |
0.354 |
|
| 1998 |
Albrecht JD, Wang RP, Ruden PP, Farahmand M, Brennan KF. Monte Carlo calculation of electron transport properties of bulk AlN Journal of Applied Physics. 83: 1446-1449. |
0.347 |
|
| 1997 |
Albrecht JD, Wang R, Ruden PP, Farahmand M, Bellotti E, Brennan KF. Monte Carlo Calculation Of High- And Low-Field Al x Ga 1−x N Electron Transport Characteristics Mrs Proceedings. 482: 815. DOI: 10.1557/Proc-482-815 |
0.393 |
|
| 1997 |
Bellotti E, Brennan KF, Wang R, Ruden PP. Calculation of the electron initiated impact ionization transition rate in cubic and hexagonal phase ZnS Journal of Applied Physics. 82: 2961-2964. DOI: 10.1063/1.366131 |
0.33 |
|
| 1997 |
Oğuzman IH, Bellotti E, Brennan KF, Kolnı́k J, Wang R, Ruden PP. Theory of hole initiated impact ionization in bulk zincblende and wurtzite GaN Journal of Applied Physics. 81: 7827-7834. DOI: 10.1063/1.365392 |
0.429 |
|
| 1997 |
Kolnı́k J, Oğuzman İH, Brennan KF, Wang R, Ruden PP. Monte Carlo calculation of electron initiated impact ionization in bulk zinc-blende and wurtzite GaN Journal of Applied Physics. 81: 726-733. DOI: 10.1063/1.364213 |
0.419 |
|
| 1997 |
Fung AK, Cong L, Albrecht JD, Nathan MI, Ruden PP, Shtrikman H. Linear in-plane uniaxial stress effects on the device characteristics of AlGaAs/GaAs modulation doped field effect transistors Journal of Applied Physics. 81: 502-505. DOI: 10.1063/1.364126 |
0.344 |
|
| 1997 |
Hove JMV, Hickman R, Klaassen JJ, Chow PP, Ruden PP. Ultraviolet-sensitive, visible-blind GaN photodiodes fabricated by molecular beam epitaxy Applied Physics Letters. 70: 2282-2284. DOI: 10.1063/1.118838 |
0.318 |
|
| 1997 |
Wang R, Ruden PP, Kolnik J, Oguzman I, Brennan KF. Dielectric Properties Of Wurtzite And Zincblende Structure Gallium Nitride Journal of Physics and Chemistry of Solids. 58: 913-918. DOI: 10.1016/S0022-3697(96)00219-3 |
0.313 |
|
| 1997 |
Fang TN, Ruden PP. Electronic structure model for n- and p-type silicon quantum dots Superlattices and Microstructures. 22. DOI: 10.1006/Spmi.1996.0454 |
0.34 |
|
| 1997 |
Ogǔzman IH, Bellotti E, Brennan KF, Kolník J, Wang R, Ruden PP. Theory of hole initiated impact ionization in bulk zincblende and wurtzite GaN Journal of Applied Physics. 81: 7827-7834. |
0.326 |
|
| 1997 |
Kolník J, Oǧuzman IH, Brennan KF, Wang R, Ruden PP. Monte Carlo calculation of electron initiated impact ionization in bulk zinc-blende and wurtzite GaN Journal of Applied Physics. 81: 726-733. |
0.323 |
|
| 1996 |
Kolnik J, Oguzman IH, Brennan KF, Wang R, Ruden PP. Theoretical Prediction of Zinc Blende Phase GaN Avalanche Photodiode Performance Based on Numerically Calculated Electron and Hole Impact Ionization Rate Ratio Mrs Proceedings. 423. DOI: 10.1557/Proc-423-45 |
0.357 |
|
| 1996 |
Cong L, Albrecht JD, Cohen D, Ruden PP, Nathan MI. Growth of (111)B‐oriented resonant tunneling devices in a gas source molecular beam epitaxy system Journal of Vacuum Science and Technology. 14: 924-927. DOI: 10.1116/1.580416 |
0.342 |
|
| 1996 |
Oğuzman İH, Kolník J, Brennan KF, Wang R, Fang T, Ruden PP. Hole transport properties of bulk zinc‐blende and wurtzite phases of GaN based on an ensemble Monte Carlo calculation including a full zone band structure Journal of Applied Physics. 80: 4429-4436. DOI: 10.1063/1.363422 |
0.41 |
|
| 1996 |
Kolnik J, Oguzman IH, Brennan KF, Wang R, Ruden PP. Calculation of the wave‐vector‐dependent interband impact‐ionization transition rate in wurtzite and zinc‐blende phases of bulk GaN Journal of Applied Physics. 79: 8838-8840. DOI: 10.1063/1.362509 |
0.331 |
|
| 1996 |
Cong L, Albrecht JD, Nathan MI, Ruden PP. Piezoelectric effect in (001)‐ and (111)‐oriented double‐barrier resonant tunneling devices Journal of Applied Physics. 79: 7770-7774. DOI: 10.1063/1.362382 |
0.339 |
|
| 1996 |
Albrecht JD, Cong L, Ruden PP, Nathan MI, Smith DL. Resonant tunneling in (001)‐ and (111)‐oriented III–V double‐barrier heterostructures under transverse and longitudinal stresses Journal of Applied Physics. 79: 7763-7769. DOI: 10.1063/1.362381 |
0.385 |
|
| 1996 |
Oǧuzman IH, Kolník J, Brennan KF, Wang R, Fang TN, Ruden PP. Hole transport properties of bulk zinc-blende and wurtzite phases of GaN based on an ensemble Monte Carlo calculation including a full zone band structure Journal of Applied Physics. 80: 4429-4436. |
0.305 |
|
| 1996 |
Oguzman IH, Kolnik J, Brennan KF, Wang R, Ruden PP. Monte Carlo calculation of hole transport in bulk zincblende phase of GaN including a pseudopotential calculated band structure Materials Research Society Symposium - Proceedings. 395: 479-484. |
0.302 |
|
| 1996 |
Kolnik J, Oguzman IH, Brennan KF, Wang R, Ruden PP. Theoretical prediction of zinc blende phase GaN avalanche photodiode performance based on numerically calculated electron and hole impact ionization rate ratio Materials Research Society Symposium - Proceedings. 423: 45-50. |
0.328 |
|
| 1995 |
Wang R, Ruden PP. Electron-electron-interaction-induced instability in double quantum-wire structures. Physical Review. B, Condensed Matter. 52: 7826-7829. PMID 9979764 DOI: 10.1103/Physrevb.52.7826 |
0.333 |
|
| 1995 |
Kolnik J, Oguzman IH, Brennan KF, Wang R, Ruden PP. Theoretical study of electron initiated impact ionization rate in bulk GaN using a wave vector dependent numerical transition rate formulation Mrs Proceedings. 395: 733-738. DOI: 10.1557/Proc-395-733 |
0.369 |
|
| 1995 |
Wang R, Ruden PP, Kolnik J, Oguzman I, Brennan KF. Dielectric functions of wurtzite and zincblende structure GaN Mrs Proceedings. 395. DOI: 10.1557/Proc-395-601 |
0.325 |
|
| 1995 |
Oguzman IH, Kolnik J, Brennan KF, Wang R, Ruden PP. Monte Carlo Calculation of Hole Transport in Bulk Zincblende Phase of GaN including a Pseudopotential Calculated Band Structure Mrs Proceedings. 395: 479. DOI: 10.1557/Proc-395-479 |
0.411 |
|
| 1995 |
Kolník J, Oǧuzman IH, Brennan KF, Wang R, Ruden PP, Wang Y. Electronic transport studies of bulk zincblende and wurtzite phases of GaN based on an ensemble Monte Carlo calculation including a full zone band structure Journal of Applied Physics. 78: 1033-1038. DOI: 10.1063/1.360405 |
0.442 |
|
| 1995 |
Yang R, Ruden PP. Electron-electron interaction in three-dimensional model quantum box Journal of Applied Physics. 78: 1798-1803. DOI: 10.1063/1.360211 |
0.356 |
|
| 1995 |
Cong L, Albrecht JD, Nathan MI, Ruden PP, Smith DL. Piezoelectric effects in (001)‐oriented double barrier resonant tunneling structures Applied Physics Letters. 66: 1358-1360. DOI: 10.1063/1.113200 |
0.347 |
|
| 1994 |
Wang Y, Mansour NS, Salem AF, Brennan KF, Ruden PP. Theoretical study of potential ultralow-noise confined-state photodetectors Optical Engineering. 33: 1241-1249. DOI: 10.1117/12.163192 |
0.387 |
|
| 1993 |
Wu Z, Ruden PP. Self-consistent calculation of the electronic structure of semiconductor quantum wires: Semiclassical and quantum mechanical approaches Journal of Applied Physics. 74: 6234-6241. DOI: 10.1063/1.355197 |
0.353 |
|
| 1992 |
Dutta MB, Shen H, Pamulapati J, Chang WH, Stroscio MA, Zhang X, Kim DM, Chung KW, Ruden PP, Nathan MI. Direct measurement of the piezoelectric field and Fermi level pinning in [111]B grown InGaAs/GaAs heterostructures Semiconductors. 1678: 203-210. DOI: 10.1117/12.60457 |
0.324 |
|
| 1992 |
Wu Z, Ruden PP. Exchange effect in coupled one-dimensional electron-gas systems Journal of Applied Physics. 71: 1318-1321. DOI: 10.1063/1.351249 |
0.362 |
|
| 1992 |
Shen H, Dutta M, Chang W, Moerkirk R, Kim DM, Chung KW, Ruden PP, Nathan MI, Stroscio MA. Direct measurement of piezoelectric field in a [111]B grown InGaAs/GaAs heterostructure by Franz-Keldysh oscillations Applied Physics Letters. 60: 2400-2402. DOI: 10.1063/1.106985 |
0.321 |
|
| 1992 |
Liu J, Ruden PP. Interband optical transitions in doping superlattices Superlattices and Microstructures. 12: 63-68. DOI: 10.1016/0749-6036(92)90221-P |
0.383 |
|
| 1992 |
Liu J, Ruden PP. Self-consistent subband calculations of hetero n-i-p-i superlattices and the effect of valence subband mixing Superlattices and Microstructures. 11: 415-421. DOI: 10.1016/0749-6036(92)90199-F |
0.412 |
|
| 1991 |
Ruden PP, Wu Z. Exchange effect in coupled two-dimensional electron gas systems Applied Physics Letters. 59: 2165-2167. DOI: 10.1063/1.106116 |
0.355 |
|
| 1990 |
Ruden PP. Heterostructure FET Model Including Gate Leakage Ieee Transactions On Electron Devices. 37: 2267-2270. DOI: 10.1109/16.59919 |
0.35 |
|
| 1984 |
Döhler GH, Ruden P. Properties of n-i-p-i doping sljperlattices in III-V and IV-VI semiconductors Surface Science. 142: 474-485. DOI: 10.1016/0039-6028(84)90353-4 |
0.378 |
|
| 1983 |
Rehm W, Ruden P, Döhler GH, Ploog K. Study of time-resolved luminescence in GaAs doping superlattices Physical Review B. 28: 5937-5942. DOI: 10.1103/Physrevb.28.5937 |
0.366 |
|
| 1983 |
Ruden P, Döhler GH. Electronic excitations in semiconductors with doping superlattices Physical Review B. 27: 3547-3553. DOI: 10.1103/Physrevb.27.3547 |
0.381 |
|
| 1983 |
Ruden P, Döhler GH. Electronic structure of semiconductors with doping superlattices Physical Review B. 27: 3538-3546. DOI: 10.1103/Physrevb.27.3538 |
0.417 |
|
| 1983 |
Ruden P, Döhler GH. Semiconductors with hetero-n-i-p-i superlattices Surface Science. 132: 540-542. DOI: 10.1016/0039-6028(83)90560-5 |
0.373 |
|
| 1983 |
Ruden P, Döhler GH. Anisotropy effects and optical excitation of acoustic phonons in n-i-p-i doping superlattices Solid State Communications. 45: 23-25. DOI: 10.1016/0038-1098(83)90876-1 |
0.346 |
|
| 1982 |
Künzel H, Döhler GH, Ruden P, Ploog K. Tunable electroluminescence from GaAs doping superlattices Applied Physics Letters. 41: 852-854. DOI: 10.1063/1.93717 |
0.4 |
|
| 1982 |
Rehm W, Kuenzel H, Doehler GH, Ploog K, Ruden P. TIME RESOLVED LUMINESCENCE IN N-I-P-I DOPING SUPERLATTICES Physica B: Physics of Condensed Matter &Amp; C: Atomic, Molecular and Plasma Physics, Optics. 117: 732-734. DOI: 10.1016/0378-4363(83)90637-X |
0.311 |
|
| 1982 |
Abstreiter G, Döhler GH, Künzel H, Olego D, Ploog K, Ruden P, Stolz HJ. Quantization of photoexcited electrons in GaAs nipi crystals Surface Science. 113: 479-480. DOI: 10.1016/0039-6028(82)90635-5 |
0.318 |
|
| 1982 |
Jung H, Döhler GH, Künzel H, Ploog K, Ruden P, Stolz HJ. Photoluminescence study of electron-hole recombination across the tunable effective gap in GaAs n-i-p-i superlattices Solid State Communications. 43: 291-294. DOI: 10.1016/0038-1098(82)90094-1 |
0.374 |
|
| 1981 |
Döhler GH, K̈nzel H, Olego D, Ploog K, Ruden P, Stolz HJ, Abstreiter G. Observation of tunable band gap and two-dimensional subbands in a novel GaAs superlattice Physical Review Letters. 47: 864-867. DOI: 10.1103/Physrevlett.47.864 |
0.389 |
|
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