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Michael Gershenson - Publications

Affiliations: 
Rutgers University, New Brunswick, New Brunswick, NJ, United States 
Area:
Condensed Matter Physics
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Year Citation  Score
2018 Pudalov VM, Gershenson M. Temperature Dependence of Renormalized Spin Susceptibility for Interacting 2D Electrons in Silicon Journal of Superconductivity and Novel Magnetism. 31: 723-726. DOI: 10.1007/S10948-017-4329-5  0.323
2017 Pudalov VM, Gershenson M, Kuntsevich AY, Teneh N, Reznikov M. On the origin of the temperature dependence of spin susceptibility in correlated 2D electron system Journal of Magnetism and Magnetic Materials. 459: 265-267. DOI: 10.1016/J.Jmmm.2017.10.077  0.345
2008 Wei J, Olaya D, Karasik BS, Pereverzev SV, Sergeev AV, Gershenson ME. Ultrasensitive hot-electron nanobolometers for terahertz astrophysics. Nature Nanotechnology. 3: 496-500. PMID 18685638 DOI: 10.1038/Nnano.2008.173  0.494
2008 Calhoun MF, Sanchez J, Olaya D, Gershenson ME, Podzorov V. Electronic functionalization of the surface of organic semiconductors with self-assembled monolayers. Nature Materials. 7: 84-9. PMID 18026107 DOI: 10.1038/Nmat2059  0.634
2008 Karasik BS, Pereverzev SV, Olaya D, Wei J, Gershenson ME, Sergeev AV. Electrical NEP in hot-electron titanium superconducting bolometers Proceedings of Spie - the International Society For Optical Engineering. 7020. DOI: 10.1117/12.788584  0.508
2007 Li ZQ, Podzorov V, Sai N, Martin MC, Gershenson ME, Di Ventra M, Basov DN. Light quasiparticles dominate electronic transport in molecular crystal field-effect transistors. Physical Review Letters. 99: 016403. PMID 17678172 DOI: 10.1103/Physrevlett.99.016403  0.669
2006 Wei J, Pereverzev S, Gershenson ME. Microwave-induced dephasing in one-dimensional metal wires. Physical Review Letters. 96: 086801. PMID 16606210 DOI: 10.1103/Physrevlett.96.086801  0.491
2006 Najafov H, Biaggio I, Podzorov V, Calhoun MF, Gershenson ME. Primary photoexcitations and the origin of the photocurrent in rubrene single crystals. Physical Review Letters. 96: 056604. PMID 16486967 DOI: 10.1103/Physrevlett.96.056604  0.623
2006 Ostroverkhova O, Cooke DG, Hegmann FA, Anthony JE, Podzorov V, Gershenson ME, Jurchescu OD, Palstra TTM. Ultrafast photoconductivity in organic semiconductors Materials Research Society Symposium Proceedings. 935: 14-19. DOI: 10.1557/Proc-0935-K03-07  0.617
2006 Ostroverkhova O, Cooke DG, Hegmann FA, Anthony JE, Podzorov V, Gershenson ME, Jurchescu OD, Palstra TT. Ultrafast Photoconductivity in Organic Semiconductors Mrs Proceedings. 935. DOI: 10.1364/Fio.2005.Stud5  0.685
2006 Olaya D, Wei J, Pereverzev S, Karasik BS, Kawamura JH, McGrath WR, Sergeyev AV, Gershenson ME. An untrasensitive hot-electron bolometer for low-background SMM applications Proceedings of Spie - the International Society For Optical Engineering. 6275. DOI: 10.1117/12.672303  0.488
2006 Gershenson ME, Podzorov V, Morpurgo AF. Colloquium: Electronic transport in single-crystal organic transistors Reviews of Modern Physics. 78: 973-989. DOI: 10.1103/Revmodphys.78.973  0.698
2006 Ahn CH, Bhattacharya A, Di Ventra M, Eckstein JN, Frisbie CD, Gershenson ME, Goldman AM, Inoue IH, Mannhart J, Millis AJ, Morpurgo AF, Natelson D, Triscone JM. Electrostatic modification of novel materials Reviews of Modern Physics. 78: 1185-1212. DOI: 10.1103/Revmodphys.78.1185  0.429
2006 Ostroverkhova O, Cooke DG, Hegmann FA, Anthony JE, Podzorov V, Gershenson ME, Jurchescu OD, Palstra TTM. Ultrafast carrier dynamics in pentacene, functionalized pentacene, tetracene, and rubrene single crystals Applied Physics Letters. 88. DOI: 10.1063/1.2193801  0.657
2006 Menard E, Marchenko A, Podzorov V, Gershenson M, Fichou D, Rogers J. Inside Front Cover: Nanoscale Surface Morphology and Rectifying Behavior of a Bulk Single-Crystal Organic Semiconductor (Adv. Mater. 12/2006) Advanced Materials. 18: NA-NA. DOI: 10.1002/Adma.200690050  0.654
2006 Menard E, Marchenko A, Podzorov V, Gershenson M, Fichou D, Rogers J. Nanoscale Surface Morphology and Rectifying Behavior of a Bulk Single-Crystal Organic Semiconductor Advanced Materials. 18: 1552-1556. DOI: 10.1002/Adma.200502569  0.697
2005 Podzorov V, Menard E, Rogers JA, Gershenson ME. Hall effect in the accumulation layers on the surface of organic semiconductors. Physical Review Letters. 95: 226601. PMID 16384249 DOI: 10.1103/Physrevlett.95.226601  0.687
2005 Podzorov V, Gershenson ME. Photoinduced charge transfer across the interface between organic molecular crystals and polymers. Physical Review Letters. 95: 016602. PMID 16090641 DOI: 10.1103/Physrevlett.95.016602  0.67
2005 Podzorov V, Menard E, Pereversev S, Yakshinsky B, Madey T, Rogers JA, Gershenson ME. Interaction of organic surfaces with active species in the high-vacuum environment Applied Physics Letters. 87. DOI: 10.1063/1.2035323  0.658
2005 Rang Z, Nathan MI, Ruden PP, Podzorov V, Gershenson ME, Newman CR, Frisbie CD. Hydrostatic pressure dependence of charge carrier transport in single-crystal rubrene devices Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1875761  0.621
2005 Ostroverkhova O, Cooke DG, Shcherbyna S, Egerton RF, Hegmann FA, Tykwinski RR, Anthony JE, Podzorov V, Gershenson ME, Jurchescu OD, Palstra TTM. Ultrafast photogeneration and band-like transport of mobile charge carriers in organic semiconductors Optics Infobase Conference Papers.  0.642
2004 Podzorov V, Menard E, Borissov A, Kiryukhin V, Rogers JA, Gershenson ME. Intrinsic charge transport on the surface of organic semiconductors. Physical Review Letters. 93: 086602. PMID 15447211 DOI: 10.1103/Physrevlett.93.086602  0.686
2004 Sundar VC, Zaumseil J, Podzorov V, Menard E, Willett RL, Someya T, Gershenson ME, Rogers JA. Elastomeric transistor stamps: reversible probing of charge transport in organic crystals. Science (New York, N.Y.). 303: 1644-6. PMID 15016993 DOI: 10.1126/Science.1094196  0.7
2004 Pudalov VM, Kirichenko AS, Klimov NN, Gershenson M, Kojima H. Unexpected negative nonmonotonic magnetoresistance of the two-dimensional electrons in Si in a parallel magnetic field Jetp Letters. 80: 359-362. DOI: 10.1134/1.1825123  0.707
2004 Podzorov V, Pudalov VM, Gershenson ME. Light-induced switching in back-gated organic transistors with built-in conduction channel Applied Physics Letters. 85: 6039-6041. DOI: 10.1063/1.1836877  0.625
2004 Podzorov V, Gershenson ME, Kloc C, Zeis R, Bucher E. High-mobility field-effect transistors based on transition metal dichalcogenides Applied Physics Letters. 84: 3301-3303. DOI: 10.1063/1.1723695  0.693
2004 de Boer RWI, Gershenson ME, Morpurgo AF, Podzorov V. Organic single-crystal field-effect transistors Physica Status Solidi (a). 201: 1302-1331. DOI: 10.1002/Pssa.200404336  0.727
2004 Menard E, Podzorov V, Hur SH, Gaur A, Gershenson ME, Rogers JA. High-performance n- And p-type single-crystal organic transistors with free-space gate dielectrics Advanced Materials. 16: 2097-2101. DOI: 10.1002/Adma.200401017  0.638
2003 Kojima H, Gershenson M, Pudalov VM, Brunthaler G, Prinz A, Bauer G. Interaction Effects in Electron Transport in Si Inversion Layers Journal of the Physical Society of Japan. 72: 57-62. DOI: 10.1143/Jpsjs.72Sa.57  0.375
2003 Podzorov V, Sysoev SE, Loginova E, Pudalov VM, Gershenson ME. Single-crystal organic field effect transistors with the hole mobility ∼8 cm2/V s Applied Physics Letters. 83: 3504-3506. DOI: 10.1063/1.1622799  0.674
2003 Podzorov V, Pudalov VM, Gershenson ME. Field-effect transistors on rubrene single crystals with parylene gate insulator Applied Physics Letters. 82: 1739-1741. DOI: 10.1063/1.1560869  0.713
2001 Podzorov V, Gershenson ME, Uehara M, Cheong S. Phase separation and1/fnoise in low-TMIcolossal magnetoresistance manganites Physical Review B. 64. DOI: 10.1103/Physrevb.64.115113  0.622
2001 Gershenson ME, Gong D, Sato T, Karasik BS, Sergeev AV. Millisecond electron–phonon relaxation in ultrathin disordered metal films at millikelvin temperatures Applied Physics Letters. 79: 2049-2051. DOI: 10.1063/1.1407302  0.343
2000 Podzorov V, Uehara M, Gershenson ME, Koo TY, Cheong S. Giant1/fnoise in perovskite manganites: Evidence of the percolation threshold Physical Review B. 61: R3784-R3787. DOI: 10.1103/Physrevb.61.R3784  0.624
1999 Podzorov V, Uehara M, Gershenson ME, Koo TY, Cheong S. Giant 1/f Noise in Low-Tc CMR Manganites: Evidence of the Percolation Threshold Mrs Proceedings. 602. DOI: 10.1557/Proc-602-113  0.595
1998 Gershenson ME, Khavin YB, Bogdanov AL. Electrons in quasi-one-dimensional conductors: from high-temperature diffusion to low-temperature hopping Physics-Uspekhi. 41: 186-189. DOI: 10.1070/Pu1998V041N02Abeh000360  0.319
1998 Altshuler BL, Gershenson ME, Aleiner IL. Phase relaxation of electrons in disordered conductors Physica E: Low-Dimensional Systems and Nanostructures. 3: 58-68. DOI: 10.1016/S1386-9477(98)00219-7  0.378
1993 Echternach PM, Gershenson ME, Bozler HM, Bogdanov AL, Nilsson B. Nyquist phase relaxation in one-dimensional metal films. Physical Review. B, Condensed Matter. 48: 11516-11519. PMID 10007487 DOI: 10.1103/Physrevb.48.11516  0.328
1983 Gershenson M, Gubankov V, Zhuravlev Y. Interaction and localization effects in two-dimensional film of superconductor at T > Tc Solid State Communications. 45: 87-90. DOI: 10.1016/0038-1098(83)90347-2  0.346
1973 Deutscher G, Gershenson M, Grünbaum E, Imry Y. Granular Superconducting Films Journal of Vacuum Science and Technology. 10: 697-701. DOI: 10.1116/1.1318416  0.328
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