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Toshikazu Nishida - Publications

Affiliations: 
Electrical and Computer Engineering University of Florida, Gainesville, Gainesville, FL, United States 
Area:
Electronics and Electrical Engineering, Condensed Matter Physics
Website:
https://www.ece.ufl.edu/people/faculty/toshikazu-nishida/
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63 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2019 Ghatge M, Walters G, Nishida T, Tabrizian R. A Non-Reciprocal Filter Using Asymmetrically Transduced Micro-Acoustic Resonators Ieee Electron Device Letters. 40: 800-803. DOI: 10.1109/Led.2019.2907089  0.313
2019 Ghatge M, Walters G, Nishida T, Tabrizian R. An ultrathin integrated nanoelectromechanical transducer based on hafnium zirconium oxide Nature Electronics. 2: 506-512. DOI: 10.1038/S41928-019-0305-3  0.32
2015 Lomenzo PD, Takmeel Q, Zhou C, Fancher CM, Lambers E, Rudawski NG, Jones JL, Moghaddam S, Nishida T. TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films Journal of Applied Physics. 117. DOI: 10.1063/1.4916715  0.311
2015 Augustine S, Gu P, Zheng X, Nishida T, Fan ZH. Low-power electrically controlled thermoelastic microvalves integrated in thermoplastic microfluidic devices Microfluidics and Nanofluidics. DOI: 10.1007/S10404-015-1653-6  0.305
2014 Sankar V, Patrick E, Dieme R, Sanchez JC, Prasad A, Nishida T. Electrode impedance analysis of chronic tungsten microwire neural implants: understanding abiotic vs. biotic contributions. Frontiers in Neuroengineering. 7: 13. PMID 24847248 DOI: 10.3389/Fneng.2014.00013  0.743
2014 Prasad A, Xue QS, Dieme R, Sankar V, Mayrand RC, Nishida T, Streit WJ, Sanchez JC. Abiotic-biotic characterization of Pt/Ir microelectrode arrays in chronic implants. Frontiers in Neuroengineering. 7: 2. PMID 24550823 DOI: 10.3389/Fneng.2014.00002  0.745
2014 Lomenzo PD, Zhao P, Takmeel Q, Moghaddam S, Nishida T, Nelson M, Fancher CM, Grimley ED, Sang X, Lebeau JM, Jones JL. Ferroelectric phenomena in Si-doped HfO2 thin films with TiN and Ir electrodes Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 32. DOI: 10.1116/1.4873323  0.314
2013 Sankar V, Sanchez JC, McCumiskey E, Brown N, Taylor CR, Ehlert GJ, Sodano HA, Nishida T. A highly compliant serpentine shaped polyimide interconnect for front-end strain relief in chronic neural implants. Frontiers in Neurology. 4: 124. PMID 24062716 DOI: 10.3389/Fneur.2013.00124  0.323
2012 Prasad A, Xue QS, Sankar V, Nishida T, Shaw G, Streit WJ, Sanchez JC. Comprehensive characterization and failure modes of tungsten microwire arrays in chronic neural implants. Journal of Neural Engineering. 9: 056015. PMID 23010756 DOI: 10.1088/1741-2560/9/5/056015  0.305
2012 Streit W, Xue QS, Prasad A, Sankar V, Knott E, Dyer A, Reynolds J, Nishida T, Shaw G, Sanchez J. Electrode failure: tissue, electrical, and material responses. Ieee Pulse. 3: 30-3. PMID 22344948 DOI: 10.1109/Mpul.2011.2175632  0.303
2012 Phipps A, Nishida T. System Modeling of Piezoelectric Energy Harvesters Ieee Transactions On Power Electronics. 27: 790-802. DOI: 10.1109/Tpel.2011.2161616  0.68
2012 Baykan MO, Thompson SE, Nishida T. Size- and Orientation-Dependent Strain Effects on Ballistic Si p-Type Nanowire Field-Effect Transistors Ieee Transactions On Nanotechnology. 11: 1231-1238. DOI: 10.1109/Tnano.2012.2222662  0.757
2012 Dieme R, Zhang J, Rudawski NG, Jones K, Bosman G, Sheplak M, Nishida T. Process dependence of 1/f noise and defects in ion implanted p-type piezoresistors Journal of Applied Physics. 112. DOI: 10.1063/1.4740221  0.762
2012 Baykan MO, Young CD, Akarvardar K, Majhi P, Hobbs C, Kirsch P, Jammy R, Thompson SE, Nishida T. Physical insights on comparable electron transport in (100) and (110) double-gate fin field-effect transistors Applied Physics Letters. 100. DOI: 10.1063/1.3696038  0.755
2011 Yang X, Choi Y, Lim J, Nishida T, Thompson S. Strain induced changes in the gate leakage current of n-channel metal-oxide-semiconductor field-effect transistors Journal of Applied Physics. 110: 14511. DOI: 10.1063/1.3603023  0.317
2010 Koehler AD, Gupta A, Chu M, Parthasarathy S, Linthicum KJ, Johnson JW, Nishida T, Thompson SE. Extraction of AlGaN/GaN HEMT gauge factor in the presence of traps Ieee Electron Device Letters. 31: 665-667. DOI: 10.1109/Led.2010.2048195  0.659
2010 Chu M, Koehler AD, Gupta A, Nishida T, Thompson SE. Simulation of AlGaN/GaN high-electron-mobility transistor gauge factor based on two-dimensional electron gas density and electron mobility Journal of Applied Physics. 108: 104502. DOI: 10.1063/1.3500465  0.648
2010 Baykan MO, Thompson SE, Nishida T. Strain effects on three-dimensional, two-dimensional, and one-dimensional silicon logic devices: Predicting the future of strained silicon Journal of Applied Physics. 108: 93716. DOI: 10.1063/1.3488635  0.758
2009 Phipps A, Liu F, Cattafesta L, Sheplak M, Nishida T. Demonstration of a wireless, self-powered, electroacoustic liner system. The Journal of the Acoustical Society of America. 125: 873-81. PMID 19206864 DOI: 10.1121/1.3050287  0.696
2009 Park H, Cummings DJ, Arora R, Pellish JA, Reed RA, Schrimpf RD, McMorrow D, Armstrong SE, Roh U, Nishida T, Law ME, Thompson SE. Laser-induced current transients in strained-si diodes Ieee Transactions On Nuclear Science. 56: 3203-3209. DOI: 10.1109/Tns.2009.2033361  0.585
2009 Lim J, Acosta A, Thompson SE, Bosman G, Simoen E, Nishida T. Effect of mechanical strain on 1/f noise in metal-oxide semiconductor field-effect transistors Journal of Applied Physics. 105: 54504. DOI: 10.1063/1.3080127  0.379
2009 Choi YS, Park H, Nishida T, Thompson SE. Reliability of HfSiON gate dielectric silicon MOS devices under [110] mechanical stress: Time dependent dielectric breakdown Journal of Applied Physics. 105: 44503. DOI: 10.1063/1.3074299  0.588
2008 Liu F, Phipps A, Horowitz S, Ngo K, Cattafesta L, Nishida T, Sheplak M. Acoustic energy harvesting using an electromechanical Helmholtz resonator. The Journal of the Acoustical Society of America. 123: 1983-90. PMID 18397006 DOI: 10.1121/1.2839000  0.686
2008 Park H, Dixit SK, Choi YS, Schrimpf RD, Fleetwood DM, Nishida T, Thompson SE. Total ionizing dose effects on strained HfO2-based nMOSFETs Ieee Transactions On Nuclear Science. 55: 2981-2985. DOI: 10.1109/Tns.2008.2006837  0.592
2008 Yang X, Parthasarathy S, Sun Y, Koehler A, Nishida T, Thompson SE. Temperature dependence of enhanced hole mobility in uniaxial strained p-channel metal-oxide-semiconductor field-effect transistors and insight into the physical mechanisms Applied Physics Letters. 93: 243503. DOI: 10.1063/1.3046725  0.653
2008 Son SY, Choi YS, Kumar P, Park HW, Nishida T, Singh RK, Thompson SE. Strain induced changes in gate leakage current and dielectric constant of nitrided Hf-silicate metal oxide semiconductor capacitors Applied Physics Letters. 93: 153505. DOI: 10.1063/1.3000615  0.342
2008 Chu M, Nishida T, Lv X, Mohta N, Thompson SE. Comparison between high-field piezoresistance coefficients of Si metal-oxide-semiconductor field-effect transistors and bulk Si under uniaxial and biaxial stress Journal of Applied Physics. 103: 113704. DOI: 10.1063/1.2936890  0.308
2008 Choi YS, Nishida T, Thompson SE. Impact of mechanical stress on direct and trap-assisted gate leakage currents in p-type silicon metal-oxide-semiconductor capacitors Applied Physics Letters. 92: 173507. DOI: 10.1063/1.2917717  0.324
2008 Choi YS, Numata T, Nishida T, Harris R, Thompson SE. Impact of mechanical stress on gate tunneling currents of germanium and silicon p-type metal-oxide-semiconductor field-effect transistors and metal gate work function Journal of Applied Physics. 103: 64510. DOI: 10.1063/1.2838234  0.357
2008 Liu J, Martin DT, Kadirvel K, Nishida T, Cattafesta L, Sheplak M, Mann BP. Nonlinear model and system identification of a capacitive dual-backplate MEMS microphone Journal of Sound and Vibration. 309: 276-292. DOI: 10.1016/J.Jsv.2007.07.037  0.719
2007 Horowitz S, Nishida T, Cattafesta L, Sheplak M. Development of a micromachined piezoelectric microphone for aeroacoustics applications. The Journal of the Acoustical Society of America. 122: 3428-36. PMID 18247752 DOI: 10.1121/1.2785040  0.374
2007 Liu F, Horowitz S, Nishida T, Cattafesta L, Sheplak M. A multiple degree of freedom electromechanical Helmholtz resonator. The Journal of the Acoustical Society of America. 122: 291-301. PMID 17614489 DOI: 10.1121/1.2735116  0.345
2007 Xu S, Ngo KDT, Nishida T, Chung G, Sharma A. Low Frequency Pulsed Resonant Converter for Energy Harvesting Ieee Transactions On Power Electronics. 22: 63-68. DOI: 10.1109/Tpel.2006.886647  0.316
2007 Suthram S, Ziegert JC, Nishida T, Thompson SE. Piezoresistance coefficients of (100) silicon nMOSFETs measured at low and high (∼1.5 GPa) channel stress Ieee Electron Device Letters. 28: 58-61. DOI: 10.1109/Led.2006.887939  0.301
2007 Martin DT, Liu J, Kadirvel K, Fox RM, Sheplak M, Nishida T. A micromachined dual-backplate capacitive microphone for aeroacoustic measurements Journal of Microelectromechanical Systems. 16: 1289-1302. DOI: 10.1109/Jmems.2007.909234  0.761
2007 Choi YS, Lim J, Numata T, Nishida T, Thompson SE. Mechanical stress altered electron gate tunneling current and extraction of conduction band deformation potentials for germanium Journal of Applied Physics. 102: 104507. DOI: 10.1063/1.2809374  0.339
2007 Sun G, Sun Y, Nishida T, Thompson SE. Hole mobility in silicon inversion layers: Stress and surface orientation Journal of Applied Physics. 102: 84501. DOI: 10.1063/1.2795649  0.301
2007 Sun Y, Thompson SE, Nishida T. Physics of strain effects in semiconductors and metal-oxide-semiconductor field-effect transistors Journal of Applied Physics. 101: 104503. DOI: 10.1063/1.2730561  0.331
2007 Jun J, Chou B, Lin J, Phipps A, Shengwen X, Ngo K, Johnson D, Kasyap A, Nishida T, Wang HT, Kang BS, Ren F, Tien LC, Sadik PW, Norton DP, et al. A hydrogen leakage detection system using self-powered wireless hydrogen sensor nodes Solid-State Electronics. 51: 1018-1022. DOI: 10.1016/J.Sse.2007.05.019  0.656
2006 Dieme R, Bosman G, Nishida T, Sheplak M. Sources of excess noise in silicon piezoresistive microphones Journal of the Acoustical Society of America. 119: 2710-2720. DOI: 10.1121/1.2188367  0.759
2006 Nishida T, Dieme R, Sheplak M, Bosman G. Noise modeling and characterization of piezoresistive transducers American Society of Mechanical Engineers, Micro-Electro Mechanical Systems Division, (Publications) Mems. DOI: 10.1115/IMECE2006-15392  0.762
2006 Thompson SE, Sun G, Choi YS, Nishida T. Uniaxial-process-induced strained-Si: extending the CMOS roadmap Ieee Transactions On Electron Devices. 53: 1010-1020. DOI: 10.1109/Ted.2006.872088  0.331
2006 Horowitz SB, Sheplak M, Cattafesta LN, Nishida T. A MEMS acoustic energy harvester Journal of Micromechanics and Microengineering. 16. DOI: 10.1088/0960-1317/16/9/S02  0.347
2006 Lim J, Yang X, Nishida T, Thompson SE. Measurement of conduction band deformation potential constants using gate direct tunneling current in n-type metal oxide semiconductor field effect transistors under mechanical stress Applied Physics Letters. 89: 73509. DOI: 10.1063/1.2245373  0.314
2005 Horowitz SB, Nishida T, Cattafesta LN, Sheplak M. Development of an acoustical energy harvester The Journal of the Acoustical Society of America. 118: 1945-1945. DOI: 10.1121/1.4809089  0.335
2005 Martin DT, Liu J, Kadirvel K, Fox RM, Sheplak M, Nishida T. Dual‐backplate capacitive aeroacoustic microphone The Journal of the Acoustical Society of America. 118: 1944-1944. DOI: 10.1121/1.1999427  0.754
2004 Sheplak M, Nishida T, Cattafesta L. MEMS‐based acoustic arrays: Promise and challenges The Journal of the Acoustical Society of America. 116: 2510-2510. DOI: 10.1121/1.4785016  0.344
2003 Arnold DP, Nishida T, Cattafesta LN, Sheplak M. A directional acoustic array using silicon micromachined piezoresistive microphones. The Journal of the Acoustical Society of America. 113: 289-98. PMID 12558267 DOI: 10.1121/1.1527960  0.357
2003 Gallas Q, Holman R, Nishida T, Carroll B, Sheplak M, Cattafesta L. Lumped Element Modeling of Piezoelectric-Driven Synthetic Jet Actuators Aiaa Journal. 41: 240-247. DOI: 10.2514/2.1936  0.322
2003 Kang BS, Kim S, Kim J, Ren F, Baik K, Pearton SJ, Gila BP, Abernathy CR, Pan CC, Chen GT, Chyi JI, Chandrasekaran V, Sheplak M, Nishida T, Chu SNG. Effect of external strain on the conductivity of AlGaN/GaN high-electron-mobility transistors Applied Physics Letters. 83: 4845-4847. DOI: 10.1063/1.1631054  0.315
2002 Sheplak M, Chandrasekaran V, Cain A, Nishida T, Cattafesta LN. Characterization of a silicon-micromachined thermal shear-stress sensor Aiaa Journal. 40: 1099-1104. DOI: 10.2514/2.1758  0.328
2002 Chow EM, Chandrasekaran V, Partridge A, Nishida T, Sheplak M, Quate CF, Kenny TW. Process compatible polysilicon-based electrical through-wafer interconnects in silicon substrates Journal of Microelectromechanical Systems. 11: 631-640. DOI: 10.1109/Jmems.2002.805206  0.346
2001 Horowitz SB, Nishida T, Cattafesta LN, Sheplak M. Impedance tuning of an electromechanical acoustic liner The Journal of the Acoustical Society of America. 110: 2773-2773. DOI: 10.1121/1.4777719  0.357
2001 Arnold DP, Nishida T, Cattafesta LN, Sheplak M. Technology development for directional acoustic arrays The Journal of the Acoustical Society of America. 110: 2671-2671. DOI: 10.1121/1.4777120  0.342
2001 Chandrasekaran V, Li X, Li J, Nishida T, Cattafesta LN, Sheplak M. Thermoelastically actuated MEMS ultrasonic transducer The Journal of the Acoustical Society of America. 110: 2646-2646. DOI: 10.1121/1.4776982  0.348
2000 Horowitz SB, Nishida T, Cattafesta LN, Sheplak M. Compliant‐backplate Helmholtz resonators The Journal of the Acoustical Society of America. 107: 2824-2824. DOI: 10.1121/1.429114  0.303
1995 Neugroschel A, Sah CT, Han KM, Carroll MS, Nishida T, Kavalieros JT, Lu Y. Direct-Current Measurements of Oxide and Interface Traps on Oxidized Silicon Ieee Transactions On Electron Devices. 42: 1657-1662. DOI: 10.1109/16.405281  0.567
1992 Nishida T. BiMOS and SMOSC structures for MOS parameter measurement Solid State Electronics. 35: 357-369. DOI: 10.1016/0038-1101(92)90239-9  0.316
1991 Thompson SE, Nishida T. A new measurement method for trap properties in insulators and semiconductors: Using electric field stimulated trap‐to‐band tunneling transitions in SiO2 Journal of Applied Physics. 70: 6864-6876. DOI: 10.1063/1.349810  0.327
1991 Thompson SE, Nishida T. Tunneling and thermal emission of electrons from a distribution of shallow traps in SiO2 Applied Physics Letters. 58: 1262-1264. DOI: 10.1063/1.104330  0.307
1988 Hsu CCH, Nishida T, Sah CT. Observation of threshold oxide electric field for trap generation in oxide films on silicon Journal of Applied Physics. 63: 5882-5884. DOI: 10.1063/1.340281  0.553
1987 Nishida T, Sah CT. A Physically Based Mobility Model for MOSFET Numerical Simulation Ieee Transactions On Electron Devices. 34: 310-320. DOI: 10.1109/T-Ed.1987.22924  0.581
1987 Lu LS, Nishida T, Sah CT. Thermal emission and capture rates of holes at the gold donor level in silicon Journal of Applied Physics. 62: 4773-4780. DOI: 10.1063/1.339031  0.547
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